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TYNx10 Series

STANDARD

10A SCR

Table 1: Main Features

Symbol

Value

Unit

I T(RMS)

10

A

V DRM /V RRM

400, 600 and 800

V

I GT

15

mA

DESCRIPTION The TYNx10 Silicon Controlled Rectifiers is a high performance glass passivated technology.

K

G

A

K G A K A A G TO-220AB

K

A A
A
A

G

TO-220AB

This general purpose Silicon Controlled Rectifiers is designed for power supply up to 400Hz on resis- tive or inductive load.

Table 2: Order Codes

Part Numbers

Marking

TYN410RG

TYN410

 

TYN610RG

TYN610

TYN810RG

TYN810

Table 3: Absolute Ratings (limiting values)

Symbol

Parameter

Value

Unit

I

T(RMS)

RMS on-state current (180° conduction angle)

T c = 100°C

10

A

IT (AV)

Average on-state current (180° conduction angle)

T c = 100°C

6.4

A

I

Non repetitive surge peak on-state current

t p = 8.3 ms

T j = 25°C

105

A

 

TSM

t p = 10 ms

100

 

I

² t

I ² t Value for fusing

t p = 10 ms

T j = 25°C

50

A

2 S

dI/dt

Critical rate of rise of on-state current I G = 100 mA , dI G /dt = 0.1 A/µs

T j = 125°C

50

A/µs

 

I

GM

Peak gate current

t p = 20 µs

T j = 125°C

4

A

P

G(AV)

Average gate power dissipation

T j = 125°C

1

W

P

GM

Maximum gate power

t p = 20 µs

T j = 125°C

10

W

V

DRM

 

TYN410

 

400

 

Repetitive peak off-state voltage

 

T j = 125°C

 

V

V

TYN610

600

 

RRM

 

TYN810

 

800

 
 

T

stg

Storage junction temperature range

- 40 to + 150 - 40 to + 125

°C

T

j

Operating junction temperature range

 

T

L

Maximum lead temperature for soldering during 10s at 2mm from case

260

°C

February 2006

REV. 2

1/6

TYNx10 Series

Tables 4: Electrical Characteristics (T j = 25°C, unless otherwise specified)

Symbol

 

Test Conditions

Value

 

Unit

I

GT

V D = 12 V (D.C.)

R L = 33

 

MAX.

15

 

mA

V

GT

MAX.

1.5

 

V

V

GD

V D = V DRM

R L = 3.3 k

T j = 110°C

MIN.

0.2

 

V

t

gt

V D = V DRM

I G = 40 mA

dI G /dt = 0.5 A/µs

TYP.

2

 

µs

 

I

H

I T = 100 mA

Gate open

MAX.

30

 

mA

 

I

L

I G = 1.2 x I GT

 

TYP.

50

 

mA

dV/dt

Linear slope up to:

T j = 110°C

MIN.

200

 

V/µs

V D = 67 % V DRM Gate open

V

TM

I TM = 20 A

tp = 380 µs

MAX.

1.6

 

V

I DRM

V DRM = V RRM

 

T j = 25°C

MAX.

10

 

µA

I RRM

T j = 110°C

2

 

mA

 

t

q

V D = 67 % V DRM dI TM /dt = 30 A/µs

I TM = 20 A

dV D /dt = 50 V/µs

V R = 25 V

T j = 110°C

TYP.

70

 
   

µs

Table 5: Thermal Resistance

 

Symbol

   

Parameter

Value

Unit

R

th(j-c)

Junction to case (D.C.)

 

2.5

°C/W

R

th(j-a)

Junction to ambient

 

60

°C/W

Figure 1: Maximum average power dissipation

Figure

2:

Correlation

between

maximum

versus average on-state current

average

power

dissipation

and

maximum

12

10

8

6

4

2

0

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P(W) DC α = 180° α = 120° α = 90° α = 60° α
P(W)
DC
α = 180°
α = 120°
α = 90°
α = 60°
α = 30°
360°
(A)
I T(AV)
α
01
2
3
456
7
8
9
allowable temperature (T amb and T lead ) P(W) T (°C) case 12 = 6°C/W
allowable temperature (T amb and T lead )
P(W)
T
(°C)
case
12
= 6°C/W
= 4°C/W
= 2°C/W
R th
R th
R th
= 0°C/W
R th
α = 180°
100
10
8
105
6
110
4
115
2
120
T
(°C)
amb
0
125
0
20
40
60
80
100
120
140

TYNx10 Series

Figure 3: Average on-state current versus case temperature

I (A) T(AV) 12 D.C. 10 8 α = 180° 6 4 2 T (°C)
I
(A)
T(AV)
12
D.C.
10
8
α = 180°
6
4
2
T
(°C)
case
0 0
10
20
30
40
50
60
70
80
90
100
110
120
130
Figure 5: Relative variation of gate trigger current versus junction temperature ,I ,I [T ]
Figure 5: Relative variation of gate trigger
current versus junction temperature
,I
,I
[T ] / I
,I
,I [T =25°C]
I GT
H
L
j
GT
H
L
j
2.5
2
I GT
1.5
I H & I L
1
0.5
T
(°C)
j
0
-40 -30
-20
-10
0
10
20
30
40
50
60
70
80
90
100 110
Figure 7: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp <
Figure 7: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding values of I²t
2
2
(A), I t (A s)
I TSM
T
initial = 25°C
j
I TSM
I
2 t
100
t
(ms)
p
10
1
2
5
10
Figure 4: Relative variation of thermal impedance versus pulse duration K=[Z /R th(j-c) th(j-c) ]
Figure 4: Relative variation of thermal
impedance versus pulse duration
K=[Z
/R
th(j-c)
th(j-c) ]
1
Z th(j-c)
0.1
Z th(j-a)
t
(s)
p
0.01
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
Figure 6: Surge peak on-state current versus number of cycles I (A) TSM 120 100
Figure 6: Surge peak on-state current versus
number of cycles
I
(A)
TSM
120
100
t p =10ms
One cycle
80
T j initial=25°C
60
40
20
Number
of
cycles
0
1
10
100
1000

Figure 8: On-state characteristics (maximum values)

I (A) TM 1000 T j =max 100 10 T j =25°C T j max.:
I
(A)
TM
1000
T j
=max
100
10
T j =25°C
T j max.:
V
t0 =0.82V
R
d =24m Ω
V
TM (V)
1 012345

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TYNx10 Series

Figure 9: Ordering Information Scheme

TYN

4

10

RG

Standard SCR series

Voltage

4 = 400V Current

10 = 10A Packing mode

RG = Tube

Table 6: Product Selector

Part Numbers

 

Voltage (xxx)

Sensitivity

Package

400 V

600 V

800V

TYN410RG

X

       

TYN610RG

 

X

 

15 mA

TO-220AB

TYN810RG

   

X

4/6

X         TYN610RG   X   15 mA TO-220AB TYN810RG     X

TYNx10 Series

Figure 10: TO-220AB Package Mechanical Data

DIMENSIONS REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. B C A 15.20 15.90
DIMENSIONS
REF.
Millimeters
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
B
C
A
15.20
15.90
0.598
0.625
Ø I
b2
a1
3.75
0.147
L
a2
13.00
14.00
0.511
0.551
F
B
10.00
10.40
0.393
0.409
b1
0.61
0.88
0.024
0.034
A
b2
1.23
1.32
0.048
0.051
I4
C
4.40
4.60
0.173
0.181
l3
c1
0.49
0.70
0.019
0.027
c2
a1
c2
2.40
2.72
0.094
0.107
l2
e
2.40
2.70
0.094
0.106
a2
F
6.20
6.60
0.244
0.259
ØI
3.75
3.85
0.147
0.151
M
c1
I4
15.80
16.40
16.80
0.622
0.646
0.661
b1
e
L
2.65
2.95
0.104
0.116
l2
1.14
1.70
0.044
0.066
l3
1.14
1.70
0.044
0.066
M
2.60
0.102

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.

Table 7: Ordering Information

Ordering type

Marking

Package

Weight

Base qty

Delivery mode

TYN410RG

TYN410

       

TYN610RG

TYN610

TO-220AB

2.3 g

50

Tube

TYN810RG

TYN810

Table 8: Revision History

 

Date

Revision

 

Description of Changes

 

Sep-2001

1A

First issue.

 

13-Feb-2006

2

TO-220AB delivery mode changed from bulk to tube. ECOPACK statement added.

First issue.   13-Feb-2006 2 TO-220AB delivery mode changed from bulk to tube. ECOPACK statement added.

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TYNx10 Series

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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