VS-8ETH06PbF, VS-8ETH06-N3, VS-8ETH06FPPbF, VS-8ETH06FP-N3

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Vishay Semiconductors

Hyperfast Rectifier, 8 A FRED Pt

FEATURES
Hyperfast recovery time Low forward voltage drop 175 C operating junction temperature
TO-220AC
Base cathode 2

TO-220 FULL-PAK

Low leakage current Fully isolated package (VINS = 2500 VRMS) UL E78996 pending Compliant to RoHS Directive 2002/95/EC Designed and qualified according to JEDEC-JESD47 Halogen-free according to IEC 61249-2-21 definition (-N3 only)

1 Cathode

3 Anode

1 Cathode

3 Anode

VS-8ETH06PbF VS-8ETH06-N3

VS-8ETH06FPPbF VS-8ETH06FP-N3

DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.

PRODUCT SUMMARY
Package IF(AV) VR VF at IF trr typ. TJ max. Diode variation TO-220AC, TO-220FP 8A 600 V 2.4 V 18 ns 175 C Single die

ABSOLUTE MAXIMUM RATINGS

PARAMETER Repetitive peak reverse voltage Average rectified forward current SYMBOL VRRM FULL-PAK IF(AV) IFSM IFM TJ, TStg TC = 144 C TC = 108 C TJ = 25 C TEST CONDITIONS VALUES 600 8 90 100 16 - 65 to 175 C A UNITS V

Non-repetitive peak surge current Repetitive peak forward current

FULL-PAK

Operating junction and storage temperatures

ELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise specified)

PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF IR CT LS IR = 100 A IF = 8 A IF = 8 A, TJ = 150 C VR = VR rated TJ = 150 C, VR = VR rated VR = 600 V Measured lead to lead 5 mm from package body TEST CONDITIONS MIN. 600 TYP. 2.0 1.3 0.3 55 17 8.0 MAX. 2.4 1.8 50 500 A pF nH V UNITS

Reverse leakage current Junction capacitance Series inductance

Revision: 02-Jan-12

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VS-8ETH06PbF, VS-8ETH06-N3, VS-8ETH06FPPbF, VS-8ETH06FP-N3

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TEST CONDITIONS IF = 1 A, dIF/dt = 100 A/s, VR = 30 V IF = 8 A, dIF/dt = 100 A/s, VR = 30 V TJ = 25 C TJ = 125 C TJ = 25 C TJ = 125 C TJ = 25 C TJ = 125 C TJ = 125 C IF = 8 A dIF/dt = 600 A/s VR = 390 V IF = 8 A dIF/dt = 200 A/s VR = 390 V MIN. TYP. 18 20 25 40 2.4 4.8 25 120 33 12 220 MAX. 22 25 A ns UNITS

DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 C unless otherwise specified)

PARAMETER SYMBOL

Reverse recovery time

trr

Peak recovery current

IRRM Qrr trr IRRM Qrr

Reverse recovery charge Reverse recovery time Peak recovery current Reverse recovery charge

nC ns A nC

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER Maximum junction and storage temperature range Thermal resistance, junction to case Thermal resistance, junction to ambient per leg Thermal resistance, case to heatsink Weight Mounting torque Marking device Case style TO-220AC Case style TO-220 FULL-PAK SYMBOL TJ, TStg RthJC RthJA RthCS Typical socket mount Mounting surface, flat, smooth and greased TEST CONDITIONS MIN. - 65 6.0 (5.0) TYP. 1.4 3.4 0.5 2.0 0.07 8ETH06 8ETH06FP MAX. 175 2 4.3 70 12 (10) g oz. kgf cm (lbf in) C/W UNITS C

(FULL-PAK)

100

1000

IR - Reverse Current (A)

100 10 1 0.1

TJ = 175 C TJ = 150 C TJ = 125 C TJ = 100 C

IF - Instantaneous Forward Current (A)

10

TJ = 175 C TJ = 150 C TJ = 25 C

TJ = 25 C 0.01 0.001

0.1 0 1 2 3 4

100

200

300

400

500

600

VF - Forward Voltage Drop (V)

Fig. 1 - Typical Forward Voltage Drop Characteristics

VR - Reverse Voltage (V)

Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage

Revision: 02-Jan-12

Document Number: 94026 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-8ETH06PbF, VS-8ETH06-N3, VS-8ETH06FPPbF, VS-8ETH06FP-N3

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1000

Vishay Semiconductors

CT - Junction Capacitance (pF)

100

TJ = 25 C

10 0 100 200 300 400 500 600

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

ZthJC - Thermal Impedance (C/W)

10

1
PDM

0.1

Single pulse (thermal resistance) 0.01 0.00001 0.0001

D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 0.01

t1 t2

Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.1

.
1

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics

ZthJC - Thermal Impedance (C/W)

10

1
PDM

0.1 Single pulse (thermal resistance) 0.01 0.00001

D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 0.01 0.1

t1 t2

Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 1 10

.
100

0.0001

t1 - Rectangular Pulse Duration (s)

Fig. 5 - Maximum Thermal Impedance ZthJC Characteristics (FULL-PAK)

Revision: 02-Jan-12

Document Number: 94026 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-8ETH06PbF, VS-8ETH06-N3, VS-8ETH06FPPbF, VS-8ETH06FP-N3

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180 20 18

Vishay Semiconductors

Allowable Case Temperature (C)

Average Power Loss (W)

170 160 DC 150 140 130 See note (1) 120 0 2 4 6 8 10 12 Square wave (D = 0.50) Rated VR applied

16 14 12 10 8 6 4 2 0 0 2 4 6 DC

RMS limit

D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50

10

12

IF(AV) - Average Forward Current (A)

Fig. 6 - Maximum Allowable Case Temperature vs. Average Forward Current
180 60

IF(AV) - Average Forward Current (A)

Fig. 8 - Forward Power Loss Characteristics

Allowable Case Temperature (C)

160

50

VR = 390 V TJ = 125 C TJ = 25 C

120 Square wave (D = 0.50) Rated VR applied 100 See note (1) 80 0 2 4 6 8

DC

trr (ns)

140

40

30

20 IF = 16 A IF = 8 A 1000

10

12

14

10 100

IF(AV) - Average Forward Current (A)

Fig. 7 - Maximum Allowable Case Temperature vs. Average Forward Current (FULL-PAK)
400 350 300 VR = 390 V TJ = 125 C TJ = 25 C IF = 16 A IF = 8 A

dIF/dt (A/s)
Fig. 9 - Typical Reverse Recovery Time vs. dIF/dt

Qrr (nC)

250 200 150 100 50 0 100

1000

dIF/dt (A/s)
Fig. 10 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 8); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR

(1)

Revision: 02-Jan-12

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VS-8ETH06PbF, VS-8ETH06-N3, VS-8ETH06FPPbF, VS-8ETH06FP-N3

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VR = 200 V

Vishay Semiconductors

0.01 L = 70 H D.U.T.
dIF/dt adjust

D G IRFP250 S

Fig. 11 - Reverse Recovery Parameter Test Circuit

(3)

IF
0

trr ta tb

Qrr
(2)

(4)

IRRM

0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM

(1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2

(5) dI(rec)M/dt - peak rate of change of current during tb portion of trr

Fig. 12 - Reverse Recovery Waveform and Definitions

Revision: 02-Jan-12

Document Number: 94026 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-8ETH06PbF, VS-8ETH06-N3, VS-8ETH06FPPbF, VS-8ETH06FP-N3

www.vishay.com ORDERING INFORMATION TABLE

Vishay Semiconductors

Device code

VS1 1 2 3 4 5 6 7 8 -

8
2

E
3

T
4

H
5

06
6

FP
7

PbF
8

Vishay Semiconductors product Current rating (8 = 8 A) E = Single diode T = TO-220, D2PAK H = Hyperfast recovery Voltage rating (06 = 600 V) None = TO-220AC FP = TO-220 FULL-PAK Environmental digit: PbF = Lead (Pb)-free and RoHS compliant -N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free

ORDERING INFORMATION (Example)

PREFERRED P/N VS-8ETH06PbF VS-8ETH06-N3 VS-8ETH06FPPbF VS-8ETH06FP-N3 QUANTITY PER T/R 50 50 50 50 MINIMUM ORDER QUANTITY 1000 1000 1000 1000 PACKAGING DESCRIPTION Antistatic plastic tube Antistatic plastic tube Antistatic plastic tube Antistatic plastic tube

LINKS TO RELATED DOCUMENTS Dimensions TO-220AC TO-220FP TO-220ACPbF Part marking information TO-220AC-N3 TO-220FPPbF TO-220FP-N3 www.vishay.com/doc?95221 www.vishay.com/doc?95005 www.vishay.com/doc?95224 www.vishay.com/doc?95068 www.vishay.com/doc?95009 www.vishay.com/doc?95440

Revision: 02-Jan-12

Document Number: 94026 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Outline Dimensions
www.vishay.com DIMENSIONS in millimeters
10.6 10.4 Hole 3.4 3.1 2.8 2.6

Vishay Semiconductors

3.7 3.2

7.31 6.91
16.0 15.8

16.4 15.4

10

3.3 3.1 13.56 13.05

2.54 TYP.

0.9 0.7 2.54 TYP.

0.61 0.38 2.85 2.65 Lead assignments Diodes 1 + 2 - Cathode 3 - Anode 1.4 1.3

1.15 TYP. 1.05

R 0.7 (2 places) R 0.5

4.8 4.6

5 0.5

5 0.5

Conforms to JEDEC outline TO-220 FULL-PAK

Revision: 20-Jul-11

Document Number: 95005 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Outline Dimensions
Vishay Semiconductors

TO-220AC
DIMENSIONS in millimeters and inches
B Seating plane P 0.014 M B A M (6) H1 (7) Detail B D1 1 L3 L4 L 2 3 C E1 (6) Lead assignments Diodes 1 + 2 - Cathode 3 - Anode c e1 0.015 M B A M A2 A Conforms to JEDEC outline TO-220AC A A A1 H1 D2 (6) 2 x b2 Detail B 2xb E Thermal pad C C 1 2 D 3 D L1

(6) E E2 (7) Q

(6) D

Lead tip

View A - A

SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 D2 E

MILLIMETERS MIN. 4.25 1.14 2.56 0.69 0.38 1.20 1.14 0.36 0.36 14.85 8.38 11.68 10.11 MAX. 4.65 1.40 2.92 1.01 0.97 1.73 1.73 0.61 0.56 15.25 9.02 12.88 10.51

INCHES MIN. 0.167 0.045 0.101 0.027 0.015 0.047 0.045 0.014 0.014 0.585 0.330 0.460 0.398 MAX. 0.183 0.055 0.115 0.040 0.038 0.068 0.068 0.024 0.022 0.600 0.355 0.507 0.414

NOTES

SYMBOL E1 E2 e e1

MILLIMETERS MIN. 6.86 2.41 4.88 6.09 13.52 3.32 1.78 0.76 3.54 2.60 MAX. 8.89 0.76 2.67 5.28 6.48 14.02 3.82 2.13 1.27 3.73 3.00

INCHES MIN. 0.270 0.095 0.192 0.240 0.532 0.131 0.070 0.030 0.139 0.102 MAX. 0.350 0.030 0.105 0.208 0.255 0.552 0.150 0.084 0.050 0.147 0.118

NOTES 6 7

H1 L

6, 7

L1 L3

4 3

L4 P Q

6 3, 6

90 to 93

90 to 93

Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline

Document Number: 95221 Revision: 07-Mar-11

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Revision: 12-Mar-12

Document Number: 91000