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Transistors

Transistors

2SC3311A

Silicon NPN epitaxial planar type

For low-frequency amplification Complementary to 2SA1309A

Features

Optimum for high-density mounting

Allowing supply with the radial taping

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Absolute Maximum Ratings T a = 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

V

CBO

60

V

Collector-emitter voltage (Base open)

V

CEO

50

V

Emitter-base voltage (Collector open)

V

EBO

7

V

Collector current

 

I

C

100

mA

Peak collector current

I

CP

200

mA

Collector power dissipation

 

P

C

300

mW

Junction temperature

 

T

j

150

°C

Storage temperature

T

stg

55 to +150

°C

Electrical Characteristics T a = 25°C ± 3°C

Unit: mm

4.0±0.2 2.0±0.2 0.75 max. +0.20 0.45 –0.10 +0.20 0.45 (2.5) (2.5) –0.10 0.7±0.1 1: Emitter
4.0±0.2
2.0±0.2
0.75 max.
+0.20
0.45
–0.10
+0.20
0.45
(2.5)
(2.5)
–0.10
0.7±0.1
1: Emitter
2: Collector
1
2
3
15.6±0.5
(0.8)(0.8)
3.0±0.2
7.6

3: Base

NS-B1 Package

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

V

CBO

I C = 10 µA, I E = 0

60

   

V

Collector-emitter voltage (Base open)

V

CEO

I C = 2 mA, I B = 0

50

   

V

Emitter-base voltage (Collector open)

V

EBO

I E = 10 µA, I C = 07V

       

Collector-base cutoff current (Emitter open)

I

CBO

V CB = 10 V, I E = 0

   

0.1

µA

Collector-emitter cutoff current (Base open)

I

CEO

V CE = 10 V, I B = 01

     

µA

Forward current transfer ratio *

h

FE

V CE = 10 V, I C = 2 mA

160

 

460

Collector-emitter saturation voltage

V

CE(sat)

I C = 100 mA, I B = 10 mA

 

0.1

0.3

V

Transition frequency

f

T

V CB = 10 V, I E = −2 mA, f = 200 MHz

 

150

 

MHz

Collector output capacitance (Common base, input open circuited)

C

ob

V CB = 10 V, I E = 0, f = 1 MHz

 

3.5

 

pF

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. * : Rank classification

Rank

Q

R

S

No-rank

h FE

160 to 260

210 to 340

290 to 460

160 to 460

Product of no-rank is not classified and have no indication for rank.

1
1

Publication date: March 2003

SJC00127BED

2SC3311A

2SC3311A

P C T a

500 400 300 200 100 0 0 40 80 120 160 Collector power dissipation P
500
400
300
200
100
0
0
40
80
120
160
Collector power dissipation P C (
)mW

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Ambient temperature T a (°C)

V CE(sat) I C

100 I C / I B = 10 10 1 25 °C T a =
100
I C / I B =
10
10
1
25
°C
T a = 75°C
0.1
−25°C
0.01
0.1
1
10
100
Collector-emitter saturation voltage V CE(sat) (
)V

Collector current I C (mA)

C ob V CB

10 I E = 0 f = 1 MHz T a = 25°C 8 6
10
I E =
0
f = 1 MHz
T
a = 25°C
8
6
4
2
0
1
10
100
Collector
(Common output
base, capacitance
input open circuited) C ob (pF)

I C V CE

60 T a = 25°C 50 I = 160 µA B 40 140 µA 120
60
T
a = 25°C
50
I
= 160 µA
B
40
140
µA
120
µA
30
100
µA
20
80
µA
60
µA
10
40
µA
20
µA
0
0
2
4
6
8
10
12
Collector current I C (
)mA

Collector-emitter voltage V CE (V)

h FE I C

600 V CE = 10 V 500 400 T a = 75 °C 25°C 300
600
V CE = 10
V
500
400
T a = 75
°C
25°C
300
−25°
C
200
100
0
0.1
1
10
100
Forward current transfer ratio h FE

Collector current I C (mA)

NV I C

240 V CE = 10 V Function = FLAT T a = 25° C 200
240
V CE = 10 V
Function =
FLAT
T a =
25°
C
200
160
120
R g = 100 kΩ
80
20 kΩ
4.7 kΩ
40
0
10 100
1 000
voltage NV ( mV )Noise

I C V BE

200 V CE = 10 V 160 120 25°C 80 T a = 75°C −25°C
200
V CE = 10 V
160
120
25°C
80
T a =
75°C
−25°C
40
0
0
0.4
0.8
1.2
1.6
2.0
Collector current I C (
)mA

Base-emitter voltage V BE (V)

f T I E

300 V 10 V CE = f = 100 MHz T a = 25°C 250
300
V
10
V
CE =
f
=
100 MHz
T
a = 25°C
250
200
150
100
50
0
− 0.1
−1
−10
−100
Transition frequency f T (
)MHz

Emitter current I E (mA)

Collector-base voltage V CB (V) Collector current I C (µA) 2 SJC00127BED
Collector-base voltage V CB (V)
Collector current I C (µA)
2
SJC00127BED

Request for your special attention and precautions in using the technical information and semiconductors described in this material

(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan.

(2) The technical information described in this material is limited to showing representative characteris- tics and applied circuits examples of the products. It neither warrants non-infringement of intellec- tual property right or any other rights owned by our company or a third party, nor grants any license.

(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the

product or technologies as described in this material.

(4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instru- ments and household appliances). Consult our sales staff in advance for information on the following applications:

Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.

Any applications other than the standard applications intended.

(5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.

(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi- mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other- wise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged.

(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.

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2002 JUL
2002 JUL