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International Rectifiers RAD-Hard HEXFETTM technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
TO-39
Features:
n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
300 ( 0.063 in. (1.6mm) from case for 10s) 0.98 (typical)
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1
2/18/03
IRHF9130
Pre-Irradiation
Test Conditions
VGS = 0V, ID =-1.0mA Reference to 25C, ID = -1.0mA VGS = -12V, I D = -4.1A VGS = -12V, ID = -6.5A VDS = VGS, ID = -1.0mA VDS >-15V, IDS = -4.1A VDS= -80V ,VGS=0V VDS = -80V, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS =-12V, ID = -6.5A VDS = -50V VDD = -50V, ID = -6.5A, VGS =-12V, RG = 7.5
BVDSS Drain-to-Source Breakdown Voltage -100 BV DSS/ T J Temperature Coefficient of Breakdown -0.112 Voltage RDS(on) Static Drain-to-Source On-State 0.30 Resistance 0.35 VGS(th) Gate Threshold Voltage -2.0 -4.0 g fs Forward Transconductance 2.5 IDSS Zero Gate Voltage Drain Current -25 -250 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance 7.0 -100 100 45 10 25 30 50 70 70
nA nC
ns
nH
Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package)
1200 290 76
pF
Test Conditions
V nS C
Thermal Resistance
Parameter
RthJC RthJA Junction-to-Case Junction-to-Ambient
Units
C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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IRHF9130
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Units V nA A V
Test Conditions
VGS = 0V, ID = -1.0mA VGS = VDS , ID = -1.0mA VGS = -20V VGS = 20 V VDS =-80V, VGS =0V VGS = -12V, ID =-4.1A VGS = -12V, ID =-4.1A VGS = 0V, IS = -6.5A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
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IRHF9130
Pre-Irradiation
100
10
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
100
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
-5.0V
10
-5.0V
1 1
1 1
100
2.5
ID = -6.5A
2.0
TJ = 25 C TJ = 150 C
10
1.5
1.0
0.5
1 5 6 7
V DS = -50V 20s PULSE WIDTH 8 9 10
VGS = -12V
0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( C)
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Pre-Irradiation
IRHF9130
2000
C, Capacitance (pF)
1500
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = -6.5
16
Ciss
VDS =-80V VDS =-50V VDS =-20V
12
1000
C oss
500
C rss
0 1 10 100
0 0 10 20
100
100
10
TJ = 150 C
100us
10
TJ = 25 C V GS = 0 V
1.0 1.8 2.6 3.4 4.2
1ms
0.1 0.2
TC = 25 C TJ = 150 C Single Pulse
1 10
10ms
100 1000
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IRHF9130
Pre-Irradiation
7.0
VDS VGS RG
RD
6.0
D.U.T.
+
5.0
V DD
4.0
3.0
1.0
VGS 10%
TC , Case Temperature ( C)
90% VDS
10
0.50 0.20 0.10 0.05 0.02 0.1 0.01 SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 1 0.01 10
P DM t1 t2
0.0001
0.001
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Pre-Irradiation
IRHF9130
VDS
400
RG
D .U .T IA S D R IV E R
0 .0 1
VD D A
-2 V V0 GS
300
ID -2.9A -4.1A BOTTOM -6.5A TOP
tp
200
15V
100
IAS
QG
50K
-12V 12V
.2F
-12V
QGS VG QGD
VGS
.3F
D.U.T.
+VDS
-3mA
Charge
IG
ID
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IRHF9130
Pre-Irradiation
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Foot Notes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = -25V, starting TJ = 25C, L=7.8mH Peak I L = -6.5A, VGS =-12V ISD -6.5A, di/dt -430A/s, VDD -100V, TJ 150C
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/03
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