ON Semiconductor

2N6667
2N6668

Darlington Silicon
Power Transistors
. . . designed for generalpurpose amplifier and low speed
switching applications.

PNP SILICON
DARLINGTON
POWER TRANSISTORS
10 AMPERES
6080 VOLTS
65 WATTS

High DC Current Gain

hFE = 3500 (Typ) @ IC = 4 Adc

CollectorEmitter Sustaining Voltage @ 200 mAdc
VCEO(sus) = 60 Vdc (Min) 2N6667
= 80 Vdc (Min) 2N6668
Low CollectorEmitter Saturation Voltage
VCE(sat) = 2 Vdc (Max)@ IC = 5 Adc
Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors
TO220AB Compact Package
Complementary to 2N6387, 2N6388

COLLECTOR
1

STYLE 1:
PIN 1.
2.
3.
4.

BASE
COLLECTOR
EMITTER
COLLECTOR

3
CASE 221A09
TO220AB

BASE
8k

 120

EMITTER

Figure 1. Darlington Schematic

MAXIMUM RATINGS (1)

Rating

CollectorEmitter Voltage

Symbol

2N6667

2N6668

Unit

VCEO

60

80

Vdc

CollectorBase Voltage

VCB

60

80

Vdc

EmitterBase Voltage

VEB

Vdc

IC

10
15

Adc

Base Current

IB

250

mAdc

Total Device Dissipation @ TC = 25
C

Derate above 25
C

PD

65
0.52

watts
W/
C

Total Device Dissipation @ TA = 25
C

Derate above 25
C

PD

2
0.016

Watts
W/
C

TJ, Tstg

65 to +150

C

Collector Current Continuous

Peak

Operating and Storage Junction Temperature Range

(1) Indicates JEDEC Registered Data.

Semiconductor Components Industries, LLC, 2002

April, 2002 Rev. 4

Publication Order Number:

2N6667/D

2N6667 2N6668

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

RJC

1.92

C/W

Thermal Resistance, Junction to Ambient

RJA

62.5

C/W

*ELECTRICAL CHARACTERISTICS (TC = 25
C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage (2)

(IC = 200 mAdc, IB = 0)

2N6667
2N6668

VCEO(sus)

60
80

Vdc

Collector Cutoff Current (VCE = 60 Vdc, IB = 0)

(VCE = 80 Vdc, IB = 0)

2N6667
2N6668

ICEO

1
1

mAdc

Collector Cutoff Current

(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125
C)
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125
C)

2N6667
2N6668
2N6667
2N6668

ICEX

300
300
3
3

Adc

IEBO

mAdc

hFE

1000
100

20000

CollectorEmitter Saturation Voltage (IC = 5 Adc, IB = 0.01 Adc)

(IC = 10 Adc, IB = 0.1 Adc)

VCE(sat)

2
3

Vdc

BaseEmitter Saturation Voltage(IC = 5 Adc, IB = 0.01 Adc)

(IC = 10 Adc, IB = 0.1 Adc)

VBE(sat)

2.8
4.5

Vdc

|hfe|
Cob

20

200

pF

hfe

1000

Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)

mAdc

ON CHARACTERISTICS (1)

DC Current Gain (IC = 5 Adc, VCE = 3 Vdc)

(IC = 10 Adc, VCE = 3 Vdc)

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth Product (IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz)

SmallSignal Current Gain (IC = 1 Adc, VCE = 5 Vdc, f = 1 kHz)

*Indicates JEDEC Registered Data
(2) Pulse Test: Pulse Width  300 s, Duty Cycle  2%.

VCC
- 30 V
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPES e.g.,
1N5825 USED ABOVE IB  100 mA
MSD6100 USED BELOW IB  100 mA
FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0
tr, tf  10 ns
DUTY CYCLE = 1.0%

RC
V2
APPROX
+8V

TUT

RB
51

0
V1
APPROX
- 12 V

D1
+ 4.0 V

25 s

Figure 2. Switching Times Test Circuit

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2

8k

 120

SCOPE

2N6667 2N6668

PD, POWER DISSIPATION (WATTS)

TA TC
4 80

10
7
5
3

60

40

20

t, TIME (s)

TC

TA

tr

ts

1
0.7
0.5
0.3

20

40

60
80
100
T, TEMPERATURE (C)

140

120

160

.td

tf

0.2
0

VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25C

0.1
0.1

0.2

0.3

0.5 0.7

10

IC, COLLECTOR CURRENT (AMPS)

Figure 4. Typical Switching Times

Figure 3. Power Derating

r(t) NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

1
D = 0.5
0.5
0.3
0.2
0.1

0.05

0.2
0.1

ZJC(t) = r(t) RJC

RJC = 1.92C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RJC(t)

0.05

0.03

0.02

0.02

0.01

0.01
0.01

P(pk)

0.02

t1
SINGLE PULSE
0.05

0.1

0.2

t2

DUTY CYCLE, D = t1/t2

0.5

2
5
t, TIME (ms)

10

20

50

100

200

500

1000

Figure 5. Thermal Response

20
IC, COLLECTOR CURRENT (AMPS)

100 s

5 ms

10
5
3
2

There are two limitations on the power handling ability of

a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on T J(pk) = 150
C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
< 150
C. TJ(pk) may be calculated from the data in Figure 5.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.

dc
1 ms

0.5
0.3
0.2
0.1

0.05
0.03
0.02

TJ = 150C

2N6667
BONDING WIRE LIMIT 2N6668
THERMAL LIMIT @ TC = 25C
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW RATED VCEO

5
2
3
7 10
20 30
50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 6. Maximum Safe Operating Area

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2N6667 2N6668
300

5000
TJ = 25C

2000
C, CAPACITANCE (pF)

hFE , SMALL-SIGNAL CURENT GAIN

10,000

1000
500

TC = 25C
VCE = 4 VOLTS
IC = 3 AMPS

200
100
50

5 7 10

20 30 50 70 100

70

f, FREQUENCY (kHz)

1
2
5
0.5
10 20
VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Typical SmallSignal Current Gain

Figure 8. Typical Capacitance

7000
5000
3000
2000

VCE = 3 V
TJ = 150C

TJ = 25C

1000
700
500
300
200
0.1

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

10,000
hFE, DC CURRENT GAIN

100

30
0.1

200 300 500 1000

20,000

TJ = - 55C
0.2

3
0.3
0.5 0.7 1
2
IC, COLLECTOR CURRENT (AMPS)

10

TJ = 25C
2.2
IC = 2 A

V, TEMPERATURE COEFFICIENTS (mV/C)

1
0.5
0.1

4A

6A

1.8
1.4
1
0.6
0.3

0.5 0.7

2
3
5 7
IB, BASE CURRENT (mA)

10

20

30

+
5
TJ = 25C

2
1.5

100

50

Figure 10. Typical Collector Saturation Region

3
2.5

0.2

2.6

Figure 9. Typical DC Current Gain

V, VOLTAGE (VOLTS)

Cob

Cib

50

20
10

200

VBE(sat) @ IC/IB = 250

VBE @ VCE = 3 V
VCE(sat) @ IC/IB = 250
0.2 0.3
0.5 0.7 1
2 3
IC, COLLECTOR CURRENT (AMPS)

10

+
4

*IC/IB

+
3

hFE@VCE
 3.0V
3
25C to 150C

+
2
+
1

-
55C to 25C

0
-
1

VC for VCE(sat)

-
2
-
3

VB for VBE

-
4
-
5
0.1

0.2 0.3

25C to 150C
-
55C to 25C
0.5 0.7

IC, COLLECTOR CURRENT (AMP)

Figure 11. Typical On Voltages

Figure 12. Typical Temperature Coefficients

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10

2N6667 2N6668
105

IC, COLLECTOR CURRENT (A)

104
103

REVERSE

FORWARD

VCE = 30 V

102
101

TJ = 150C
100C

100

10-
1
+
0.6

25C
+
0.4

+
0.2 0 -
0.2 -
0.4 -
0.6 -
0.8

-
1
VBE, BASE-EMITTER VOLTAGE (VOLTS)

-
1.2 -
1.4

Figure 13. Typical Collector CutOff Region

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2N6667 2N6668
PACKAGE DIMENSIONS

TO220
CASE 221A09
ISSUE AA
T
B

SEATING
PLANE

F
T

DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z

Q
1 2 3

H
K
Z
L

G
D
N

STYLE 1:
PIN 1.
2.
3.
4.

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

BASE
COLLECTOR
EMITTER
COLLECTOR

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INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080

MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04

2N6667 2N6668

Notes

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2N6667 2N6668

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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
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liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be
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2N6667/D

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