Introduction to Microelectronic Fabrication Second Edition

CHAPTER 4
4.1 (a) 10
15

= 5 x10

18

x j = 2.92 2 Dt

xj exp 2 Dt

) = 5.8

2 where Dt

= 10 -8 cm 2

10 15 (b) x j = 2 Dt erfc 1 5 x10 18

and

= 5 .3 m

(c) Using Fig. 4.16 (b) with a surface concentration of 5 x 1018/cm3 and a background concentration of 1015/cm3 yields Rs xj = 270 ohm-m. Dividing by the junction depth of 5.8 m yields Rs = 47 ohms/ . For the erfc profile, use Fig. 4.16(a) yielding 320 ohm-m and 60 ohms/ with xj = 5.3 m.
10 20

10 19

10 18

10 17

10

16

10

15

10 14

3 4 5 Distance From Surface (um)

(d)
4.2 4.3 Using Fig. 3.10: (a) approximately 0.05 m (b) 1 m (a) Using Fig. 4.8, a 1 ohm-cm n-type wafer has a background concentration of 4.0 x 1015 /cm3. So: 5 x1018 exp x j / 2 Dt
-4 -9 2

x 10 cm yields Dt = 5.61 x 10 cm . 1100 C = 1373K, and D = 10.5 exp (3.69/kT) = 2.99 x 10-13 cm2/sec yielding t = 1.88 x 104 sec or 5.21 hours (313 min.).
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[(

) ]= 4.0 x 10
2

15

. Solving for Dt with xj = 4

Introduction to Microelectronic Fabrication Second Edition (b) Using Fig. 4.16(c) with a surface concentration of 5 x 1018/cm3 and a background concentration of 4.0 x 1015/cm3 yields Rs xj = 330 ohm-m or Rs = 83 ohms/ for xj = 4 m. (c) Q = N o Dt = 5 x10 18 (5.61 x10 9 ) = 6.64 x 10 14 / cm 2 (d) Assume a solid-solubility limited constant source predeposition with Q = 2 No Dt / . Try T = 1000 oC. No = 1 x 1021/cm3 and D = 10.5 exp (-3.69/8.617 x 10-5 x 1273) = 2.58 x 10-14. Solving for Dt yields Dt = 3.46 x 10-13 and t = 13.4 sec which is a too short to control. Try T = 900 oC. No = 5.5 x 1020/cm3 and D = 1.47 x 10-15. Solving for t yields 13.0 minutes which is short but probably usable. 4.4 (a) An 1 ohm-cm n-type wafer has a doping NB = 4 x 1015/cm3 from Fig. 4.8. For the boron profile, N(x) = 5 x 1018 exp -(x2/4Dt). Setting N(4m) = NB yields 2 Dt = 1.5 x 10-4 cm. For phosphorus at 950 oC, Ns = 7 x 1020/cm3, and D = 6.53 x 10-15 cm2/sec. Using t = 1800 sec yields 2 Dt = 6.86 x 10-6 cm. The junction occurs for:

4x1015+7x1020erfc (xj/6.86x10-6) = 5x1018exp [-(xj/1.5x10-4)2] This equation can be solved approximately by realizing that the boron profile is almost constant near the surface. Thus, 7 x 1020 erfc (xj/6.86 x 10-6) 5 x 1018. Solving for xj yields a junction depth of 0.154 m. Checking the boron profile at this depth yields N = 4.95 x 1018 /cm3 so that the approximation is justified. (b) Working iteratively with Fig. 4.21, one finds that the phosphorus and boron profiles each have a value of approximately 4 x 1018/cm3 at a depth of 0.75 m which is the junction depth. (c) Using Fig. 4.12, we find that the 30 min curve reaches 5 x 1018/cm3 at a depth of slightly over 0.7 m. (d) From Prob. 4.3, Dt = 1.14 x 10-12 cm2 for the predeposition step, and Dt = 5.61 x 10-9 cm2 for the drive-in step. The total is Dt = 5.61 x 10-9 cm2. The Dt product for the phosphorus step is 1.18 x 10-11 cm2, which is much smaller than the total Dt product for the boron step. Thus, the assumption is justified. 4.5 (a) From Fig. 4.8, a 5 ohm-cm n-type wafer corresponds to NB = 9 x 1014/cm3, and Rs xj = 7500 ohm-m. A p-type Gaussian diffusion gives NS = 5 x 1016/cm3. So 9 x 1014 = 5 x 1016 exp -(7.5 x 10-4/2 Dt ). Solving for Dt yields = 3.5 x 10-8 cm2. Using Fig. 4.5 to find an appropriate temperature: at 1100 oC, D is of the order of 10-13cm2/sec which gives a time over 25 hours - so we will try 1150 oC. For Do = 10.5 and EA = 3.69 eV, D = 9.05 x 10-13cm2/sec at T = 1423 K, yielding t = 3.87 x 104 sec = 10.7 hours. The diffusion schedule would be 1150 oC for 10.7 hours. A similar calculation using 1100 oC yields t = 32.1 hours which is a little long.

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2002 Prentice Hall

Introduction to Microelectronic Fabrication Second Edition (b) As found above, NS = 5 x 1016/cm3 (c) Q = NS Dt = 1.66 x 1013/cm2 (d) Using 900 oC for 15 minutes (about as short as can be controlled), yields D = 1.49 x 10-15 cm2/sec for boron. Q = 2 NO Dt = 6.93 x 1014/cm2. This dose is almost two orders of magnitude too high. It is very difficult to get a low enough dose by direct diffusion.

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2002 Prentice Hall