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Product specification
BU2520DX
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers.
PINNING - SOT399
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c b
Rbe
case isolated
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 10 25 6 9 150 6 45 150 150 UNIT V V A A A A mA A W C C
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP. 35 MAX. 2.8 UNIT K/W K/W
1 Turn-off current.
September 1997
Rev 2.300
Philips Semiconductors
Product specification
BU2520DX
Cisol
22
pF
STATIC CHARACTERISTICS
Ths = 25 C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO Rbe VCEOsust VCEsat VBEsat hFE hFE VF PARAMETER Collector cut-off current
2
CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VEB = 7.5 V; IC = 0 A IB = 600 mA VEB = 7.5 V IB = 0 A; IC = 100 mA; L = 25 mH IC = 6.0 A; IB = 1.2 A IC = 6.0 A; IB = 1.2 A IC = 1.0 A; VCE = 5 V IC = 6 A; VCE = 5 V IF = 6 A
TYP. 13.5 50 13 7 -
UNIT mA mA mA V V V V V
Emitter cut-off current Emitter-base breakdown voltage Base-emitter resistance Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Diode forward voltage
DYNAMIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL Cc PARAMETER Collector capacitance Switching times (16 kHz line deflection circuit) ts tf Turn-off storage time Turn-off fall time CONDITIONS IE = 0 A; VCB = 10 V; f = 1 MHz ICsat = 6.0 A; LC = 650 H; Cfb = 19 nF; IB(end) = 1.0 A; LB = 5.3 H; -VBB = 4 V; (-dIB/dt = 0.8 A / s) 4.5 0.35 5.5 0.5 s s TYP. 115 MAX. UNIT pF
September 1997
Rev 2.300
Philips Semiconductors
Product specification
BU2520DX
TRANSISTOR IC DIODE
ICsat
100
hFE
Tj = 25 C
5V
Tj = 125 C
IB
IBend
10
t 20us 26us 64us VCE
1V
1 0.1
t
1 IC / A
10
100
ICsat 90 % IC
10 % tf ts IB IBend
0.8
t
0.7 0.6
t
IC/IB= 3 4 5 0.1 1 IC / A 10
0.5 0.4
- IBM
Lc
Tj = 125 C
-VBB
1 IC / A
10
100
September 1997
Rev 2.300
Philips Semiconductors
Product specification
BU2520DX
VBESAT / V
Tj = 25 C Tj = 125 C
ts, tf / us 12 11 10 9 8 7 6 5 4 3 2 1 0 ts
IC = 6A 5A tf 0.1 1 IB / A 10
Fig.10. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85C; f = 16 kHz
Normalised Power Derating
with heatsink compound
10
PD%
8A
1 5A IC = 4 A 0.1 0.1 1 IB / A 10
10
IC = 6 A
100
5A
0.1
P D
tp
D=
tp T t
10 0.1 1 IB / A 10
1E-04
1E-02 t/s
1E+00
Fig.9. Typical turn-off losses. Tj = 85C Eoff = f (IB); parameter IC; parameter frequency
September 1997
Rev 2.300
Philips Semiconductors
Product specification
BU2520DX
IC / A 100
BU2520AF
tp = ICM
= 0.01
30 us
ICDC 10 100 us
Ptot 1
1 ms
0.1 10 ms DC
Fig.13. Forward bias safe operating area. Ths = 25 C ICDC & ICM = f(VCE); ICM single pulse; parameter tp Second-breakdown limits independant of temperature. Mounted with heatsink compound.
September 1997
Rev 2.300
Philips Semiconductors
Product specification
BU2520DX
MECHANICAL DATA
Dimensions in mm Net Mass: 5.88 g
16.0 max 0.7 4.5 10.0 27 max 25.1 25.7 22.5 max 5.1 2.2 max 18.1 min 4.5 1.1 0.4 M 2 3.3
25
Fig.14. SOT399; The seating plane is electrically isolated from all terminals.
Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".
September 1997
Rev 2.300
Philips Semiconductors
Product specification
BU2520DX
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
September 1997
Rev 2.300
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