17.

Semiconductor Photon Detectors

Detector zoology
AlN

6.0

III-Nitrides (c ~ 1.6 a0) AlN Theory

Direct gap Indirect gap

E(eV)=1.24/ ()

0.2

5.0

Bandgap (eV)

GaN

3.0

GaN

20 2.0

InN

InN Theory

GaP

ZnSe CdS ZnTe AlP AlAs CdSe AlSb InP CdTe Ge GaSb InAs InSb

04 0.4 0.5 06 0.6 0.7

1.0 2.0 5.0

6H-SiC

3C-SiC

10 1.0
Al2O3

GaAs Si
Al2O3 ZnO

0.0 25 2.5

30 3.0

35 3.5

40 4.0

45 4.5

50 5.0

55 5.5

60 6.0

65 6.5

Lattice Constant ()

Wa avelengt th ()

4.0

0.3

Zincblend

ZnS

Photon detection devices

Photons to thermal energy

(phototube)

Metal-Semicon. photoconductor (Schottky-barrier ( y photodiode) p )

The External Photoeffect: Photoelectron Emission

Photogenerated electrons escape from the material as free electrons electrons. photoelectrons

metal

semiconductor

< Phototube >

< Photomultiplier Ph t lti li tube t b (PM tube) t b )>

The Internal Photoeffect: Photoconductivity

Excited carriers remain within the material, serve to increase electrical conductivity.

Generation: Absorbed photons generate free carriers (electrons and holes) holes). Transport: An applied electric field induces these carriers to move, which results in a circuit current. Amplification: large electric fields enhance the responsivity of the detector.

Here we will discuss three types of semiconductor photodetectors Photoconductors Photodiodes (PD) Avalanche photodiodes (APD)
Quantum efficiency Responsivity Response time. Photon noise Photoelectron noise Gain noise

Quantum efficiency of photodetectors

Internal Quantum Efficiency

int =

Number of Collected electrons d = 1 e Number of Photons *Entering* detector

External Quantum Efficiency

ext

i ph / q Number of Collected electrons d = = (1 RF ) 1 e = Po / h Number of Photons *Incident* on detector

Fresnel loss Fraction absorbed in detection region

S f Surface recombination bi ti effect ff t

Responsivity and Response time

Responsivity

R=

i h Photo Current (Amps) q = ph = ext h Incident Optical Power (Watts) Po

Photocurrent : i ph = RPo

Photoconductors

Photoconductors

Photodiodes
n

+ - ip

Two operation modes of PN photodiodes

Short-circuit Sh t i it (photoconductive) ( h t d ti ) operation of PDs

Open-circuit Open circuit (photovotaic) operation of PDs

Open-circuit (photovotaic) operation of PDs

Photovoltage Vp across the device that increases with increasing photon flux. This mode of operation is used, for example, in solar cells

Short-circuit operation of PDs

Reverse-biased PDs

p-i-n Photodiodes (PIN PDs)

Heterojunction Photodiodes

Schottky-barrier Photodiodes (M t l (Metal-semiconductor i d t PDs) PD )

A thin semitransparent metallic film is used in place of the p-type (or n-type) layer in the p-n junction photodiode.
Simple to fabricate Quantum efficiency: Medium Problem: Shadowing of absorption region by contacts Capacitance: Low Bandwidth: High Can be increased by thinning absorption layer and backing with a non absorbing material. Electrodes must be moved closer to reduce transit time. Compatible with standard electronic processes GaAs FETS and HEMTs InGaAs/InAlAs/InP HEMTs
T d To i increase speed, decrease electrode spacing and absorption depth

Absorption layer

Non absorbing substrate

Array Photodiodes : CCD & CMOS

CCD Sensor CMOS Sensor

Conventional Cameras use photographic films to record image. Digital cameras use a solidsolid state device called an image sensor to record image in f form of f digital di i l i information. f i

CCD = Charge Coupled Device. CMOS = Complementary Metal Oxide Semiconductor

Comparison CCD/CMOS sensors

CMOS: low cost CCD : medium to high-end

Source: B. Diericks: CMOS image sensor concepts. Photonics West 2000 Short course (Web)

Charge-coupled devices (CCD)

charge transfer to next pixel cell

CCD (Charge coupled device)

Vertical charge transfer Horizontal charge transfer Output capacitor reset
CCD

Output capacitor H i Horizontal t l Shift Register R i t

Amp

CCD IMAGERS Qualities

Text book performance for all parameters (QE, read noise, MTF, dark current, linearity, etc.).

Deficiencies
Low high-energy radiation damage tolerance. e.g. proton bulk damage and resultant CTE degradation. Significant off-chip electronic support required. Difficulty with high-speed readout (inherently a serial read out device).

CMOS image sensors

Based on standard p production process for CMOS chips, allows ll i integration t ti with other components. components

CMOS IMAGERS Qualities

Very tolerant to high-energy radiation sources (long life time). On- chip system integration (low power, low weight and compact designs). High Hi h speed d / low l noise i operation ti (inherently a parallel- random access readout device).

Deficiencies
Currently lacks performance in most areas compared to the CCD ( h (charge generation/collection/ ti / ll ti / transfer t f and d /measurement). / t)

Avalanche Photodiodes (APD)

APD with only one type of carrier (e or h) is desirable.

High resistivity p-doped layer increases electric field across absorbing region High-energy electron-hole pairs ionize other sites to multiply the current Leads to greater sensitivity light absorption intrinsic region ( (very lightly li htl doped d d p region) i )

High resistivity p region

larger charge density

APD with only one type of carrier (e or h) is desirable.

: ionization coefficients of e and h

Ionization ratio :

e h e ..

The ideal case of single-carrier multiplication is achieved when

APD gain