1999, 2000

MOS FIELD EFFECT TRANSISTOR

2SK3296
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D14063EJ2V0DS00 (2nd edition)
Date Published May 2001 NS CP(K)
Printed in Japan
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SK3296 is N-Channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
4.5 V drive available
Low on-state resistance
RDS(on)1 = 12 m MAX. (VGS = 10 V, ID = 18 A)
Low gate charge
QG = 30 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V)
Built-in gate protection diode
Surface mount device available
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) VDSS 20 V
Gate to Source Voltage (VDS = 0 V) VGSS 20 V
Drain Current (DC) (TC = 25C) ID(DC) 35 A
Drain Current (Pulse)
Note
ID(pulse) 140 A
Total Power Dissipation (TA = 25C) PT1 1.5 W
Total Power Dissipation (TC = 25C) PT2 40 W
Channel Temperature Tch 150 C
Storage Temperature Tstg 55 to +150 C
Note PW 10 s, Duty Cycle 1%
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3296 TO-220AB
2SK3296-S TO-262
2SK3296-ZK TO-263(MP-25ZK)
2SK3296-ZJ TO-263(MP-25ZJ)
The mark shows major revised points.
Data Sheet D14063EJ2V0DS 2
2SK3296
ELECTRICAL CHARACTERISTICS(TA = 25C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain Leakage Current IDSS VDS = 20 V, VGS = 0 V 10 A
Gate Leakage Current IGSS VGS = 20 V, VDS = 0 V 10 A
Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.0 2.5 V
Forward Transfer Admittance | yfs | VDS = 10 V, ID = 18 A 9.0 S
Drain to Source On-state Resistance RDS(on)1 VGS = 10 V, ID = 18 A 8.5 12 m
RDS(on)2 VGS = 4.5 V, ID = 18 A 12 19 m
Input Capacitance Ciss VDS = 10 V 1300 pF
Output Capacitance Coss VGS = 0 V 570 pF
Reverse Transfer Capacitance Crss f = 1 MHz 300 pF
Turn-on Delay Time td(on) VDD = 10 V , ID = 18 A 70 ns
Rise Time tr VGS(on) = 10 V 1220 ns
Turn-off Delay Time td(off) RG = 10 100 ns
Fall Time tf 180 ns
Total Gate Charge QG VDD = 16 V 30 nC
Gate to Source Charge QGS VGS = 10 V 4.5 nC
Gate to Drain Charge QGD ID = 35 A 8.0 nC
Diode Forward Voltage VF(S-D) IF = 35 A, VGS = 0 V 1.0 V
Reverse Recovery Time trr IF = 35 A, VGS = 0 V 35 ns
Reverse Recovery Charge Qrr di/dt = 100 A/s 23 nC
TEST CIRCUIT 2 GATE CHARGE TEST CIRCUIT 1 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
= 1 s
Duty Cycle 1%
VGS
Wave Form
ID
Wave Form
VGS
10%
90%
VGS(on)
10%
0
ID
90%
90%
td(on) tr td(off) t f
10%

ID
0
ton toff
PG. 50
D.U.T.
RL
VDD
IG = 2 mA
Data Sheet D14063EJ2V0DS 3
2SK3296
TYPICAL CHARACTERISTICS (TA = 25C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
I
D

-


D
r
a
i
n

C
u
r
r
e
n
t

-


A
0
0 2 3
100
160
120
140
1
Pulsed
VGS =10 V
40
20
60
80
7.0 V
4.5 V
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
I
D

-


D
r
a
i
n

C
u
r
r
e
n
t

-


A
Pulsed
0 1 2 3 4 5 6
VDS = 10 V
10
1
0.1
0.01
0.001
100
1000
Tch = 50C
25C
25C
75C
125C
150C
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
V
G
S
(
o
f
f
)


-


G
a
t
e

t
o

S
o
u
r
c
e

C
u
t
-
o
f
f

V
o
l
t
a
g
e

-


V
VDS = 10 V
ID = 1 mA
1.0
1.5
0.5
2.0
2.5
3.0
50 0 50 100 150
0

|

y
f
s

|


-


F
o
r
w
a
r
d

T
r
a
n
s
f
e
r

A
d
m
i
t
t
a
n
c
e


-

S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
Pulsed
VDS = 10 V
10
1
100
0.1
0.1 1 10 100
Tch = 50C
25C
25C
75C
150C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V R
D
S
(
o
n
)

-


D
r
a
i
n

t
o

S
o
u
r
c
e

O
n
-
s
t
a
t
e

R
e
s
i
s
t
a
n
c
e

-

m

0
0
10 5 15 20
30
40
50
Pulsed
ID = 28 A
18 A
7 A
10
20
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
ID - Drain Current - A
R
D
S
(
o
n
)

-


D
r
a
i
n

t
o

S
o
u
r
c
e

O
n
-
s
t
a
t
e

R
e
s
i
s
t
a
n
c
e

-

m

10
10 1
20
30
40
50
1000 100
Pulsed
0
VGS = 4.5 V
7.0 V
10 V
Data Sheet D14063EJ2V0DS 4
2SK3296
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
R
D
S
(
o
n
)

-


D
r
a
i
n

t
o

S
o
u
r
c
e

O
n
-
s
t
a
t
e

R
e
s
i
s
t
a
n
c
e

-


m

0
50
5
0
50 100 150
10
20
25
15
7.0 V
10 V
VGS = 4.5 V
ID = 18 A
Pulsed
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1.2 1.4 1
I
S
D


-


D
i
o
d
e

F
o
r
w
a
r
d

C
u
r
r
e
n
t

-

A
0 1.6
VSD - Source to Drain Voltage - V
0.6 0.8 0.4 0.2
Pulsed
0.1
0.01
1
10
100
1000
0 V
4.5 V
VGS = 10 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
C
i
s
s
,

C
o
s
s
,

C
r
s
s

-


C
a
p
a
c
i
t
a
n
c
e

-

p
F
0.1
100
1000
10000
1 10 100
VGS = 0 V
f = 1 MHz
Coss
Crss
Ciss
SWITCHING CHARACTERISTICS
ID - Drain Current - A
t
d
(
o
n
)
,

t
r
,

t
d
(
o
f
f
)
,

t
f

-


S
w
i
t
c
h
i
n
g

T
i
m
e

-


n
s
10
5
1 0.1
100
10000
1000
10 100
tf
tr
td(on)
td(off)
VDD = 10 V
VGS = 10 V
RG = 10
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
ISD - Diode Forward Current - A
t
r
r


-

R
e
v
e
r
s
e

R
e
c
o
v
e
r
y

T
i
m
e


-


n
s
di/dt = 100 A/ s
VGS = 0 V
1
0.1
10
1 10 100
1000
100

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

V
G
S


-

G
a
t
e

t
o

S
o
u
r
c
e

V
o
l
t
a
g
e

-


V
QG - Gate Charge - nC
V
D
S

-


D
r
a
i
n

t
o

S
o
u
r
c
e

V
o
l
t
a
g
e


-

V
0
0 10 20 30 40
10
5
15
20
4
0
8
VDD = 16 V
10 V
4 V
VDS
16
12
ID = 35 A
VGS
Data Sheet D14063EJ2V0DS 5
2SK3296
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
Tch - Channel Temperature - C
d
T

-

P
e
r
c
e
n
t
a
g
e

o
f

R
a
t
e
d

P
o
w
e
r

-

%
0 40 20 60 100 140 80 120 160
0
20
40
60
80
100
TC - Case Temperature - C
P
T

-

T
o
t
a
l

P
o
w
e
r

D
i
s
s
i
p
a
t
i
o
n

-

W
0
0 80 20 40 60 100 140 120 160
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
10
20
30
40
50
1 10 100 0.1
1000
100
10
1
TC = 25C
Single Pulse
ID(pulse)
ID(DC)
VDS - Drain to Source Voltage - V
I
D

-

D
r
a
i
n

C
u
r
r
e
n
t

-

A
FORWARD BIAS SAFE OPERATING AREA

1
0
0
s
1
m
s
3
m
s

3
0
0
s
P
W
=
1
0
s

1
0
m
s
P
o
w
e
r
D
is
s
ip
a
tio
n
L
im
ite
d
R
D
S
(o
n
) L
im
ite
d
(
@
V
G
S

=

1
0
V
)
D
C
PW - Pulse Width - sec
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
t
h
(
t
)

-


T
r
a
n
s
i
e
n
t

T
h
e
r
m
a
l

R
e
s
i
s
t
a
n
c
e

-

C
/
W
10
0.01
0.1
1
100
1000
1 m 10 m 100 m 1 10 100 1000
Single Pulse
10 100
Rth(ch-C) = 3.13C/W

Rth(ch-A) = 83.3C/W

Data Sheet D14063EJ2V0DS 6
2SK3296
PACKAGE DRAWINGS (Unit : mm)
1)TO-220AB (MP-25)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1 2 3
10.6 MAX.
10.0
3.60.2
4
3
.
0

0
.
3
1.30.2
0.750.1
2.54 TYP. 2.54 TYP.
5
.
9

M
I
N
.
6
.
0

M
A
X
.
1
5
.
5

M
A
X
.
1
2
.
7

M
I
N
.
1.30.2
0.50.2 2.80.2

2)TO-262
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1 2 3
(10)
4
1.30.2
0.750.3
2.54 TYP. 2.54 TYP.
8
.
5

0
.
2
1
2
.
7

M
I
N
.
1.30.2
0.50.2 2.80.2
1
.
0

0
.
5
3)TO-263 (MP-25ZK)
10.00.2
8
.
0

T
Y
P
.
2.54
0.70.15
9
.
1
5

0
.
2
2
.
4
5

0
.
2
5
1
5
.
2
5

0
.
5
1
.
3
5

0
.
3
1 2 3
4
2
.
5
4.450.2
1.30.2
0.50.2
0 to 8
o
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.4
No plating
8.4 TYP.
0.025 to
0.25
0.25
4)TO-263 (MP-25ZJ)
(10)
1.40.2
1
.
0

0
.
5
2.54 TYP. 2.54 TYP.
8
.
5

0
.
2
1 2 3
5
.
7

0
.
4
4
2
.
8

0
.
2
4.8 MAX.
1.30.2
0.50.2
(
0
.
5
R
)
(
0
.
8
R
)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.70.2
EQUIVALENT CIRCUIT

Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark The diode connected between the gate and source of the transistor
serves as a protector against ESD.
When this device actually used, an additional protection circuit is
externally required if a voltage exceeding the rated voltage may be
applied to this device.
Data Sheet D14063EJ2V0DS 7
2SK3296
[MEMO]
2SK3296
M8E 00. 4
The information in this document is current as of May, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
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Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
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"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
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Customers must check the quality grade of each semiconductor product before using it in a particular
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(Note)
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