DISCRETE SEMICONDUCTORS

DATA SHEET

2N3553 Silicon planar epitaxial overlay transistor

Product specication Supersedes data of October 1981 File under Discrete Semiconductors, SC08a 1995 Oct 27

Philips Semiconductors

Product specication

Silicon planar epitaxial overlay transistor

APPLICATIONS The 2N3553 is intended for use in VHF and UHF transmitting applications. PINNING - TO-39/3 PIN 1 2 3 base collector
handbook, halfpage

2N3553
DESCRIPTION The device is a silicon NPN overlay transistor in a TO-39 metal package with the collector connected to the case.

DESCRIPTION emitter
1 2

MBB199

Fig.1 Simplified outline.

QUICK REFERENCE DATA SYMBOL VCEX VCEO ICM Ptot Tj fT PARAMETER collector-emitter voltage collector-emitter voltage peak collector current total power dissipation junction temperature transition frequency IC = 125 mA; VCE = 28 V up to Tmb = 25 C CONDITIONS IC 200 mA; VBE = 1.5 V open base; IC 200 mA 65 40 1.0 7.0 200 500 MAX. V V A W C UNIT

RF performance f (MHz) 175 VCE (V) 28 Po (W) 2.5 Gp (dB) >10 (%) >50

WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.

1995 Oct 27

Philips Semiconductors

Product specication

Silicon planar epitaxial overlay transistor

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEX VCEO VEBO IC ICM Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current total power dissipation storage temperature junction temperature up to Tmb = 25 C CONDITIONS open emitter IC 200 mA; VBE = 1.5 V open base; IC 200 mA open collector 65 MIN.

2N3553

MAX. 65 65 40 4 0.35 1 7 +200 200 V V V V A A

UNIT

W C C

THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base 25 VALUE K/W UNIT

handbook, halfpage

10

MGC928

handbook, halfpage

10

MGC927

IC (A) 1
(2)

Ptot (W)

10-1

(1)

(3)

10-2 1 10 VCE (V)

0 102 0 100 Tmb (oC) 200

(1) All frequencies, including DC. (2) f 1 MHz. (3) Allowed during switching off, provided the transistor is cut-off with VBB 1.5 V; RBE 33 ; IC 200 mA and the transient energy 0.5 mW.

Fig.2 DC SOAR.

Fig.3 Power derating curve.

1995 Oct 27

Philips Semiconductors

Product specication

Silicon planar epitaxial overlay transistor

CHARACTERISTICS Tj = 25 C unless otherwise specied. SYMBOL V(BR)CBO V(BR)CEO V(BR)CEX V(BR)EBO VBE VCEsat ICEO hFE fT Rhoie) Cc Note 1. Pulsed through an inductor of 25 mH; = 0.5; f = 50 Hz. PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage base-emitter voltage collector-emitter saturation voltage collector leakage current DC current gain transition frequency real part of input impedance collector capacitance CONDITIONS open emitter; IC = 0.25 mA open base; IC up to 200 mA; note 1 MIN. 65 40 500 TYP.

2N3553

MAX. 1.5 1.0 0.1 200 100 20 10

UNIT V V V V V V mA

IC up to 200 mA; VBE = 1.5 V; 65 RB = 33 ; note 1 open collector; IE = 0.25 mA IC = 250 mA; VCE = 5 V IC = 250 mA; IB = 50 mA open base; VCE = 30 V VCE = 5 V; IC = 125 mA VCE = 5 V; IC = 250 mA IC = 125 mA; VCE = 28 V IC = 125 mA; VCE = 28 V; f = 200 MHz VCB = 28 V; IE = ie = 0; f = 1 MHz 4 15 10

MHz pF

handbook, halfpage

60

MGC935

handbook, halfpage

20

MGC930

hFE

Cc (pF)

15 40

10

20 5

0 0 100 200 300 400 500 IC (mA)

20

40

VCB (V)

60

Fig.4

DC current gain as a function of collector current; typical values.

Fig.5

Collector capacitance as a function of collector-base voltage; typical values.

1995 Oct 27

Philips Semiconductors

Product specication

Silicon planar epitaxial overlay transistor

APPLICATION INFORMATION RF performance at Tmb = 25 C. f (MHz) 175 Ruggedness VCE (V) 28 Po (W) 2.5 Gp (dB) >10

2N3553

(%) >50

The transistor is capable of withstanding a load mismatch corresponding to VSWR = 3 : 1 varied through all phases, under the conditions: VCE = 28 V; f = 175 MHz; Tmb = 25 C; Po = 2.5 W.

handbook, full pagewidth

+VCC

L3 C1 input 50 C2 L1 DUT
(1)

C5 output 50 C4
MGC926

C3

L4

L2

(1) The length of the external emitter wire is 1.6 mm.

Fig.6 Test circuit at 175 MHz.

1995 Oct 27

Philips Semiconductors

Product specication

Silicon planar epitaxial overlay transistor

List of components (see Fig.6) COMPONENT C1, C2, C3, C4 C5 L1 L2 L3 L4 DESCRIPTION air trimmer capacitor polyester capacitor 1 turn 1.0 mm copper wire Ferroxcube choke coil 15 turns enamelled 0.7 mm copper wire 3 turns enamelled 1.5 mm copper wire Z = 550 20%; f = 175 MHz int. diameter 4 mm; closely wound int. diameter 12 mm; leads 2 20 mm; closely wound VALUE 4 to 29 pF 10 nF int. diameter 10 mm; leads 2 10 mm DIMENSIONS

2N3553

CATALOGUE No.

4312 020 36640

handbook, halfpage

600

MGC937

(1) handbook, halfpage

10

MGC929

fT (MHz)

Po (W)

(2) (3)

400

(1) (2) (3)

(4)

(5)

200 0 100 200 300 IC (mA) 400

0 0 100 200 300 f(MHz) 400

Tj = 25 C. (1) VCE = 28 V. (2) VCE = 14 V. (3) VCE = 7 V.

VCE = 28 V; Tmb = 25 C. (1) Pi = 0.5 W. (2) Pi = 0.375 W. (3) Pi = 0.25 W. (4) Pi = 0.1 W. (5) Pi = 0.05 W.

Fig.7

Transition frequency as a function of collector current; typical values.

Fig.8

Output power as a function of frequency; typical values.

1995 Oct 27

Philips Semiconductors

Product specication

Silicon planar epitaxial overlay transistor

PACKAGE OUTLINE

2N3553

handbook, full pagewidth

0.86 max

45 o 1 2 8.5 max 3 5.08 9.4 max 6.6 max 12.7 min

MSA241

0.51 max

1.0 max

Dimensions in mm.

Fig.9 TO-39.

1995 Oct 27

Philips Semiconductors

Product specication

Silicon planar epitaxial overlay transistor

DEFINITIONS Data Sheet Status Objective specication Preliminary specication Product specication Limiting values

2N3553

This data sheet contains target or goal specications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains nal product specications.

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specication is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specication. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

1995 Oct 27

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