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Example 1
We want to choose the proper resistors such that we will have an emitter current of 1mA from a power supply of +12V The nominal beta for the transistor is 100 We have a few rules of thumb we can use:
VBB=1/3 VCC ICRC=1/3 VCC
These rules will give us a possible voltage swing at the collector of about 1/3 of the supply voltage
Example 1
Using these rules of thumb, we have a base voltage of 4V If the BJT is in active mode, then the VE = 4 0.7 = 3.3V emitter voltage is: VE R = = 3.3k We can get the emitter resistor now: E IE Another design rule is that we want the voltage divider network to have a current of IE to 0.1IE flowing through it. Neglecting the base current, we have 12V a series resistance of: R1 + R2 = = 120k
0.1mA
Example 1
We want the output of the divider network to be 4V,which gives us values for two resistors: We can now go back and see what the actual emitter current will be: This is lower than we are specifying There are two ways to correct this:
Decrease the emitter resistance by the magnitude of the second term in the denominator: Reduce the values of the divider network
IE =
Using the second approach, our emitter current will be: Finally we can calculate the collector resistor In both design options, the collector current is 0.99mA
RE = 3k
IE =
RC =
Example 1
There is an important difference between the two proposed solutions to the emitter current issue: The first design approach will result in a larger susceptibility to the variations in beta
We are already violating the design rule of the base resistance to the emitter resistance: By lowering the emitter resistance, we are headed in the wrong direction
RE = 3k
RB = 40k // 80k = 26.6k RB 26.6k = = 264 + 1 101
The second solution is much better, but comes at the cost of more current drawn from the power supply.
We dont need RB for biasing, but instead we need it for isolating any input signal from being shunted to ground.
IE =
VEE VBE RE + RB / ( + 1)
Collector to Base
Another effective method for biasing the base is to connect it to the collector Here we need the base resistor still. Recall that in the MOSFET we didnt necessarily need it If we want to have a circuit that is insensitive to variations in beta, we need: Also note that RB determines the output voltage swing:
VCC VBE IE = RC + RB / ( + 1)
RC >> RB +1
RB +1
VCB = I E
The most common current source chosen is the current mirror as shown here
I Re f
I C = I S eVBE
I E = IC / I B = IC /
VT
VC = VCC I C RR
Signal Addition
If we apply a small signal vBE the instantaneous voltage at the input is: This results in a collector current of: Rewritten, this current is: If the signal is much smaller than VT, we may approximate the current as: Note this is valid for signals less than 10mV at room temperature
vBE = VBE + vbe
iC = I S e (VBE + vbe ) VT
iC = I C e vbe VT
vbe iC I C 1 + V T
Transconductance
We can rewrite this current as: The signal component is: This shows the relationship between the signal current in the collector to the emitter base voltage Where gm is the transconductance: Note that to have a predictable transconductance we need a constant collector current.
IC iC = I C + vbe VT
IC ic = vbe = g m vbe VT