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Example
Using this circuit, we want to establish a drain current of 0.5mA The MOSFET has these qualities:
Vt=1V KnW/L=1mA/V2 Channel length modulation is ignored
VDD=15V
Example
As a rule of thumb, we will design the circuit such that 1/3 of the voltage drops across each component, thus evening out the voltage drops This means that VD=10V and VS=5V We can calculate the required resistances from this:
VDD VD 15 10 RD = = = 10k ID 0.5mA
RS =
VS 5 = = 10k RS 0.5mA
Example
We now want to find the voltage to apply to the gate to get 0.5mA of drain current. First calculate the overdrive voltage: The gate source voltage is: With the source biased at +5V, the voltage to be applied to the gate is: We want to get this bias from a voltage divider using large valued resistors. We can choose:
RG1=8M RG2=7M
1 W 2 VOV kn 2 L 1 2 0.5mA = 1mA / V 2 VOV 2 VOV = 1V ID = VGS = VOV + Vt = 2V
VG = VGS + VS = 2 + 5 = 7V
Vout V1
V2
Biasing
As we have seen, for the amplifier, we need to bias the FET to get it to operate in saturation We already looked at simple voltage biasing But there are some other means to do this: Tie the gate and drain together Make the FET an offer it cant refuse...
DC Bias point
By setting vGS to zero, we can determine what value VGS needs to be in order to get the transistor into the operating point we desire. VGS controls the drain current: This in turn affects the output voltage. We must be certain that the operation stays in saturation, so we have this restriction on our output: Furthermore, we need to ensure the desired voltage swing will be encompassed in the saturation region
ID =
1 W (VGS Vt )2 kn 2 L
VD = VDD RD I D
VD > VGS Vt
iD =
1 W (VGS + v gs + Vt )2 kn 2 L
v gs << 2VOV
iD = I D + id
Example 1
Consider an NMOS transistor with:
kn(W/L)=2mA/V2 Gate bias VOV=1V
What is the resulting DC bias current for operation in saturation? How much does the current change if a +0.1V signal is added? What about a -0.1V signal? Estimate gm from this.
Example 1
What is the resulting DC bias current for operation in saturation? We use the equation for drain current in saturation. Now lets add a +0.1V signal on top of this: Subtract from this, the DC bias current Now the -0.1V signal:
gm = vo 0.19 0.21 =2 = ( ) vi 0.1 0.1
ID =
iD =
1 W (VOV + 0.1)2 kn 2 L
+0.1V
iD =
1 W (VOV 0.1)2 kn 2 L
Transconductance
The linear term of the drain current is a function of the bias point voltage and the signal voltage This term with the bias point voltage is referred to as the transconductance, gm It can also be expressed in terms of the overvoltage The transconductance represents the slope of the iDvGS curve at the DC bias point. We can see that the transconductance is dependent on the gate voltage
W (VGS Vt )v gs id = k n L
g m = kn W (VGS Vt ) = k n W VOV L L