MCC19-08io8B

Thyristor Module

VRRM I TAV VT

= 2x 800 V = = 18 A 1.57 V

Phase leg

Part number

MCC19-08io8B

Backside: isolated

Features / Advantages:
Thyristor for line frequency Planar passivated chip Long-term stability Direct Copper Bonded Al2O3-ceramic

Applications:
Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control

Package: TO-240AA
Isolation Voltage: 3600 V~ Industry standard outline RoHS compliant Soldering pins for PCB mounting Base plate: DCB ceramic Reduced weight Advanced power cycling

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20130605a

2013 IXYS all rights reserved

MCC19-08io8B
Thyristor
Symbol V RSM/DSM V RRM/DRM I R/D VT Definition Conditions TVJ = 25C TVJ = 25C TVJ = 25C TVJ = 125C TVJ = 25C TVJ = 125 C T VJ = 125 C TVJ = 125 C min.
max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage reverse current, drain current forward voltage drop

Ratings typ. max. 900 800 100 3 1.56 2.05 1.57 2.29 18 40 0.85 18 1.3 0.20 TC = 25C t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine TVJ = 45C VR = 0 V TVJ = 125 C VR = 0 V TVJ = 45C VR = 0 V TVJ = 125 C VR = 0 V TVJ = 25C T C = 125 C 22 10 5 0.5 TVJ = 125C; f = 50 Hz t P = 200 s; di G /dt = 0.45 A/s; I G = 0.45 A; VD = VDRM non-repet., IT = 18 A 500 A/s 1000 V/s 1.5 1.6 100 200 0.2 5 t p = 10 s IG = 0.45 A; di G /dt = 0.45 A/s VD = 6 V R GK = VD = VDRM IG = 0.45 A; di G /dt = 0.45 A/s TVJ = 25 C TVJ = 25 C TVJ = 25 C 150 450 200 2 V V mA mA V mA mA mA s s repetitive, IT = 45 A 77 400 430 340 365 800 770 580 555 Unit V V A mA V V V V A A V m K/W K/W W A A A A As As As As pF W W W

VR/D = 800 V VR/D = 800 V IT = IT = IT = IT = 40 A 80 A 40 A 80 A

I TAV I T(RMS) VT0 rT R thJC R thCH Ptot I TSM

average forward current RMS forward current threshold voltage slope resistance

TC = 85C 180 sine

for power loss calculation only

thermal resistance junction to case thermal resistance case to heatsink total power dissipation max. forward surge current

It

value for fusing

t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine

CJ PGM PGAV (di/dt) cr

junction capacitance max. gate power dissipation

VR = 400 V f = 1 MHz t P = 30 s t P = 300 s

average gate power dissipation critical rate of rise of current

150 A/s

(dv/dt) cr VGT I GT VGD I GD IL IH t gd tq

critical rate of rise of voltage

VD = VDRM R GK = ; method 1 (linear voltage rise) VD = 6 V VD = 6 V VD = VDRM

TVJ = 125C TVJ = 25 C TVJ = -40 C TVJ = 25 C TVJ = -40 C TVJ = 125 C

gate trigger voltage

gate trigger current

gate non-trigger voltage gate non-trigger current latching current

holding current gate controlled delay time

turn-off time

VR = 100 V; I T = 20 A; VD = VDRM TVJ = 125 C di/dt = 10 A/s; dv/dt = 20 V/s; t p = 200 s

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20130605a

2013 IXYS all rights reserved

MCC19-08io8B
Package
Symbol I RMS Tstg T VJ Weight MD MT d Spp/App d Spb/Apb VISOL
mounting torque terminal torque creepage distance on surface | striking distance through air isolation voltage t = 1 second t = 1 minute 50/60 Hz, RMS; IISOL 1 mA terminal to terminal terminal to backside

TO-240AA
Definition
RMS current storage temperature virtual junction temperature

Ratings Conditions
per terminal

min. -40 -40

typ.

max. 200 125 125

Unit A C C g Nm Nm mm mm V V

90 2.5 2.5 13.0 16.0 9.7 16.0 3600 3000 4 4

Ordering Standard

Part Number MCC19-08io8B

Marking on Product MCC19-08io8B

Delivery Mode Box

Quantity 6

Code No. 457779

Similar Part MCMA25P1200TA MCMA35P1200TA

Package TO-240AA-1B TO-240AA-1B

Voltage class 1200 1200

Equivalent Circuits for Simulation

I V0 R0
threshold voltage slope resistance * Thyristor

* on die level

T VJ = 125 C

V 0 max R 0 max

0.85 16.8

V m

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20130605a

2013 IXYS all rights reserved

MCC19-08io8B
Outlines TO-240AA

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20130605a

2013 IXYS all rights reserved

MCC19-08io8B
Thyristor
500 50 HZ, 80% VRRM 400 TVJ = 45C TVJ = 125C 40 103 50

VR = 0 V

DC 180 sin 120 60 30

ITSM [A]

300 TVJ = 45C

It [A2s]

ITAVM [A]

30

200

20

TVJ = 125C 100

10

0 10-3 10-2 10-1 100 101

102 1 2 3 6 8 10

0 0 50 100 150

t [s] Fig. 1 Surge overload current ITSM: Crest value, t: duration

80

t [ms] Fig. 2 I2t versus time (1-10 ms)

10

TC [C] Fig. 3 Max. forward current at case temperature

1: IGT, TVJ = 125C 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C

RthJA

[KW] 1.5 2

60

2.5 3

PT
40

4 5 6

VG
1 2 1

3 5 4 6

[W]
20

[V]

DC 180 sin 120 60 30

IGD, TVJ = 125C

0 50 100 150

4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W 102 103 104

10

20

30

40

0.1 100

101

ITAVM [A]

TA [C]

IG [mA] Fig. 5 Gate trigger charact.

1000 TVJ = 25C

Fig. 4 Power dissipation versus onstate current & ambient temp. (per thyristor)
300 RthJA [KW] 0.1 250 0.15 0.2 200 0.25 0.3 0.4 0.5 0.6

tgd
100

typ.

Limit

Ptot
150

[s]

[W]
100

10

20

Circuit B6 3x MCC19
1 10

0 0 20 40 60 0 50 100 150

100

1000

IdAVM [A]

TA [C]

IG [mA] Fig. 7 Gate trigger delay time

Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature
IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20130605a

2013 IXYS all rights reserved

MCC19-08io8B
Thyristor
400 RthJA [KW] 0.1 0.15 300 0.2 0.25

Ptot
200

0.3 0.4 0.5

[W]
100

Circuit W3 3x MCC19

0.6

0 0 10 20 30 40 50 0 50 100 150

IRMS [A]

TA [C]

Fig. 7 Three phase AC-controller: Power dissipation vs. RMS output current and ambient temperature
15 30 60 120 10 180 DC

RthJC for various conduction angles d: d RthJC [K/W] DC 180 120 60 30 1.30 1.35 1.39 1.42 1.45

ZthJC [K/W]
5

Constants for ZthJC calculation: i Rthi [K/W] 1 2 0.018 0.041 1.241 ti [s] 0.0033 0.0216 0.1910

0 10-3 10-2 10-1 100 101 102 103

3 t [s] Fig. 8 Transient thermal impedance junction to case (per thyristor)

20 30 60 15 120 180

ZthJK
10

DC

RthJK for various conduction angles d: d RthJC [K/W] DC 1.50 180 1.55 120 1.59 60 1.62 30 1.65 Constants for ZthJC calculation: i Rthi [K/W] ti [s] 0.0033 0.0216 0.1910 0.4600

[K/W]
5

0 10-3

1 2 3 4
10-2 10-1 100 101 102 103

0.018 0.041 1.241 0.200

t [s] Fig. 9 Transient thermal impedance junction to heatsink (per thyristor)

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130605a

2013 IXYS all rights reserved