THYRISTOR MODULE

SBA500AA
UL;E76102 M Power Thyristor Module SBA500AA series are designed for high power rectifier control applications. Two independent thyristor elements in a electrically isolated package enable you to achieve flexible design, especially for AC switch application, idial terminal location for bus bar connection helps both your mechanical design and mounting procedure be more efficient. SBA series for two thyristors with blocking voltage up to 1600V are available. Isolated mounting base IT AV500A, IT RMS785A di/dt 200 A/s dv/dt 500V/s Applications Various rectifiers AC/DC motor drives Heater controls Light dimmers Static switches Internal Configurations
A1 K2
138max 600.2 600.2 K1 A2
4 2 5 7

K1

66.5

78max 600.2 13.5

13.5
3 1 6 8

K2

G1

A1 281

601

K2 281

4-M4 depth8 4-M8 depth15

K1 A2
471

K1 G1 G2 K2

66max

UnitA

Maximum Ratings
Symbol VDRM VRSM VRRM Symbol AV IT
RMS IT

Item Repetitive Peak Off-State Voltage Non-Repetitive Peak Reverse Voltage Repetitive Peak Reverse Voltage Item Average On-State Current R.M.S. On-State Current Surge On-State Current I2t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Forward Peak Gate Voltage Reverse Critical Rate of Rise of On-State Current Isolation Breakdown VoltageR.M.S. Operating Junction Temperature Storage Temperature MountingM6 Mounting Torque TerminalM8 TerminalM4 Mass

SBA500AA40 400 480 400

Ratings SBA500AA80 SBA500AA120 800 1200 960 1350 800 1200

31

481

SBA500AA160 1600 1700 1600 Ratings 500 785 9.1/10.0 416 15 5 5 10 5

Unit V V V Unit A A kA kA2S W W A V V A/ s V N (fB) N (fB) N (fB) g Unit mA mA V mA V V V/ s /W

Conditions Single phase, half wave, 180 conduction, Tc66 Single phase, half wave, 180 conduction, Tc66
1 2cycle,

ITSM I2t PGM

AV PG

50Hz/60Hz, peak Value, non-reqetitive

Value for one cycle of surge current

IFGM VFGM VRGM di/dt VISO Tj Tstg

IG200mA VD1 dIG/dt0.2A/ s 2VDRM A.C. 1 minute

200 2500 40 to 125 40 to 125

Recommended Value 2.5-3.9 (Recommended Value 25-40) Recommended Value 8.8-10 (Recommended Value 90-105) Recommended Value 1.0-1.4 Recommended Value 10-14) Typical Value

4.7 (48) 11.0 (115) 1.5 (15) 1100

Electrical Characteristics
Symbol IDRM IRRM VTM IGT VGT VGD Item Repetitive Peak Off-State Current, max. Repetitive Peak Reverse Current, max. Peak On-State Voltage, max. Gate Trigger Current, max. Gate Trigger Voltage, max. Non-Trigger Gate, Voltage. min. Conditions at VDRM, Single phase, half wave, Tj125 at VDRM, Single phase, half wave, Tj125 IT=1500A VD6VIT1A VD6VIT1A Tj125VD1 2VDRM Tj125VD2 3VDRMexp, Junction to case waveform Ratings 150 150 1.45 200 3 0.25 500 0.085

Critical Rate of Rise of Off-State Voltage, min. dv/dt Rth j-c Thermal Impedance, max.

SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com

SBA500AA

Gate Characteristics

On-State Characteristics

Gate Voltage V

125
Maximum Gate Non-Trigger Voltage Peak Forward Gate Voltag 10V

Peak Gate Current 5A

25 40

Pe ak Ga te Po Av we era r ge 15 Ga W te Po we r5 W

On-State Current A

Maximum

Gate Current mA

On-State Voltage V

Per one element

Allowable Case Temperature

Average On-State Current Vs Power Dissipation Single phase half wave

Average On-State Current Vs Maximum Allowable Case Temperature Single phase half wave
Per one element

Power Dissipation W

DC

360

Conduction Angle

360

Conduction Angle

DC

Average On-State Current A Transient Thermal Impedance j-c /W

Average On-State Current A

Surge On-State Current Rating Non-Repetitive

Per one element Tj25start

Transient Thermal Impedance

Per one element

Surge On-State Current A

50Hz

Junction to Case

60Hz

Time cycles

Time t sec

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