Review of Ic Fabrication

Review of IC Fabrication Technology
MICROELECTRONIC ENGINEERING ROCHESTER INSTITUTE OF TECHNOLOGY
A Review of IC Fabrication Technology

Dr. Lynn Fuller
Webpage: http://people.rit.edu/lffeee Microelectronic Engineering Rochester Institute of Technology 82 Lomb Memorial Drive Rochester, NY 14623-5604 Tel (585) 475-2035 Email: Lynn.Fuller@rit.edu Department webpage: http://www.microe.rit.edu
Rochester Institute of Technology Microelectronic Engineering
1-7-2013 Review.ppt
Page 1
January 7, 2013 Dr. Lynn Fuller, Professor
ADOBE PRESENTER This PowerPoint module has been published using Adobe Presenter. Please click on the Notes tab in the left panel to read the instructors comments for each slide. Manually advance the slide by clicking on the play arrow or pressing the page down key.
Page 2
OUTLINE Constants Periodic Table Material Properties Oxide Growth Diffusion Resistivity, Sheet Resistance, Resistance Mobility pn Junction MOSFET Vt Ion Implantation Conclusion
Page 3
CONSTANTS
Electronic charge Speed of light in vacuum Permittivity of vacuum Free electron Mass Planck constant Boltzmann constant Avogadros number Thermal voltage q c o mo h k Ao kT/q 1.602 E -19 Coulomb 2.998E8 m/s 8.854 E -14 F/cm 9.11E-31 Kg 6.625E-34 J s 1.38 E-23 J /K = 8.625E-5 eV/K 6.022E23 molecules/gm- mole @ 300 K = 0.02586
PLAY
Page 4

1
1.0079
H
0.0899 Hydrogen
PERIODIC TABLE OF THE ELEMENTS

4
9.01218
4.0026
He
0.1787 Helium 14.0067 8 15.9994 9 18.9984
6.914
Li
0.53 Lithium
Be
1.85 Beryllium 24.305
Atomic Number Density g/cm3

14
20.086
Atomic Weight Symbol Name

27 58.9332 28 29 30
10.81
12.011
10
20.179
B
2.34 Boron
C
2.62 Carbon
N
1.251 Nitrogen
O
1.429 Oxygen
F
1.696 Fluorine
Ne
0.901 Neon
1122.9898 12
Si
2.33 Silicon
13
26.9815
14
20.08615 30.97376 16
32.06 17 35.453 18 39.948
Na
0.97 Sodium
Mg
1.74 Magnesium 47.90
Al
2.70 Aluminum 63.546 65.238
Si
2.33 Silicon
P
1.82 Phosphorous
S
2.07 Sulfur
Cl
3.17 Clorine
Ar
1.784 Argon
19 39.0983 20 40.08 21 44.9559 22
K
0.86 Potassium
Ca
1.55 Calcium
Sc
3.0 Scandium
23 50.941 24
51.996
25
54.938
26
55.847
58.70
31
69.72
32
72.59
33 74.9216 34
78.96 35 79.904 36 83.80
Ti
4.50 Titanium
7.43 7.19 5.8 Vanadium Chromium Manganese
Cr
Mn
43
98
Fe
7.86 Iron
Co
8.90 Selenium
Ni
8.90 Nickel 106.4
Cu
8.96 Copper
Zn
7.14 Zinc 112.41
Ga
5.98 Gallium
Ge
5.32 Germanium
As
5.72 Arsenic
Se
4.80 Selenium
Br
3.12 Bromine
Kr
3.74 Krypton
37
85.468 38 87.62
39
88.906 40 91.22
41
92.906 42 95.94
44
101.07
45 102.9055 46
47
107.868 48
49
114.82
50
118.69 51 121.75 26 55.847 26 127.60 54 131.30
Rb
55
Sr Ba
3.5 Barium
Y
4.5 Yttrium
Zr
6.49 Zirconium
Nb Ta
16.6 Tantalum
Mo W
19.3 Tungstem
Tc Re
21.0 Rhenium
1.53 2.8 Rubidium Strontium
8.55 10.2 11.5 Niobium Molybdenum Technetium
Ru
12.2 Rhodium
Rh
12.4 Rhodium
Pd
12.0 Palladium
Ag
10.5 Silver
Cd
8.65 Cadmium
In
7.31 Indium
Sn
7.30 Tin
Sb
6.68 Antimony
Te
6.24 Tellurium
Fe
7.86 Tellurium
Xe
5.89 Xenon
132.9056 137.3357 138.906 58 178.49 59 180.95 60 183.85 61 186.207
76
190.2
77
192.22
78
195.09 79 196.9665
80
200.59
Cs
1.87 Cesium
La
6.7 Lanthanum
Hf
13.1 Hafnium
Os
22.4 Osmium
Ir
27.16 Iridium
Pt
21.4 IPlatinum
Au
19.3 Gold
Hg
13.53 Mercury
81
204.37
82
207.2
83
206.980 84 209
85
210
86
222
Tl
11.85 Thallium
Pb
11.4 Lead
Bi
9.8 Bismuth
Po
9.4 Polonium
At
??? Astatine
Rn
9.91 Radon
87
223
88
226.02 89 227.02
104 261 105 262 106 263
Fr
??? Francium
Ra
5 Radium
Ac
10.07 ???? Unnilpentium ???? ActiniumUnnilquadium Unnilhexium
Unq Unp Ce Th
Unh Pr Pa
PLAY
144.24
58 140.12 59 140.91 60
61 145
62 150.4 63 151.96 64 157.25
65 158.92 66
162.5
67 164.93 68 167.26 69 169.93 70
173.04
71
174.97
Nd U
Pm
93 237
Sm
94
237
Eu
95 243
6.78 6.77 7.00 6.475 7.54 Cerium Praseoymium NeodymiumPromethium Samarium
5.26 7.89 Europium Gadolinium
Gd
Tb
8.27 Terbium
Dy
8.54 Dysprosium
Ho
8.90 Holmium
Er
9.06 Erbium
Tm
9.33 Thulium 258
Yb
6.98 Ytterbium
Lu
9.84 Lutetium
90 232.0 91 231 92 238.02
96
247
97 247
98
251
99 252
100 257 101
102
259
103
260
Np
Pu Am
11.7 15.4 18.90 20.4 19.8 13.6 Rochester of Technology Thorium Institute Protactinium Uranium Neptunium Plutonium Americium
Cm
13.511 Curium
Bk
???? Berkelium
Cf
???? Californium
Es
???? Einsteinium
Fm
Md
No
???? Nobelium
Lr
???? Lawrencium
Microelectronic Engineering
???? ???? Fermiumr Mendelevium
Page 5
MATERIAL PROPERTIES
Symbol Atoms per unit cell Atomic Number Atomic weight Lattice constant Atomic density Density Energy Gap 300K Relative permittivity Index of refraction M elting point Specific heat Thermal diffusivity Coefficient expansion Intrinsic carrier conc Electron M obility Hole M obility Density of States conduction Density of States valance Breakdown Electric Field Effective mass electron Effective mass hole Electron affinity Z MW ao No d Eg r n Tm Cp K Dth ni n p Nc Nv E mn*/mo mp*/mo qX Units g/g-mole nm cm-3 g cm-3 eV Si 8 14 28.09 0.54307 5.00E22 2.328 1.124 11.7 3.44 1412 0.70 0.87 2.5E-6 1.45E10 1417 471 2.8E19 1.04E19 3E5 1.08 0.81 4.05 Ge 8 32 72.59 0.56575 4.42E22 5.323 0.67 16.0 3.97 937 0.32 0.36 5.7E-6 2.4E13 3900 1900 1.04E19 6.0E18 8E4 0.55 0.3 4.00 GaAs 8 31/33 144.64 0.56532 2.21E22 5.316 1.42 13.1 3.3 1237 0.35 0.44 5.9E-6 9.0E6 8800 400 4.7E17 7.0E18 3.5E5 0.068 0.5 4.07 GaP 8 31/15 100.70 0.54505 2.47E22 4.13 2.24 10.2 3.3 1467 0.004 5.3E-6 300 100 SiO2 14/8 60.08 2.20E22 2.19 8~9 3.9 1.46 1700 1.4 0.32 5E-6 20 10E-8 6~9E6 0.5 0.5 4.3 1.0 Si3N4 14/7 140.28 0.775 1.48E22 3.44 4.7 7.5 2.0 0.17 2.8E-6
C J (gK)-1 w(cmK)-1 K-1 cm-3 cm2/Vs cm2/Vs cm-3 cm-3 V/cm eV
From Muller and Kamins

Page 6
OXIDE GROWTH
Oxide Thickness Xox
0.46 Xox
Original Silicon Surface Silicon Consumed
PLAY
Page 7
WET OXIDE GROWTH CHART

10
1 Xox ,(um) 10-1
10-2 1
10
t, Time, (min)
100
PLAY
Page 8
DRY OXIDE GROWTH CHART

10
1 xox ,(um) 10-1
10-2 10
100 t, Time, (min)

1,000
PLAY
Page 9
OXIDE GROWTH CALCULATOR
OXIDE.XLS
Page 10
EXAMPLES 1. Estimate the oxide thickness resulting from 50 min. soak at 1100 C in wet oxygen.
2. If 1000 of oxide exists to start with, what is resulting oxide thickness after an additional 50 min. soak at 1100 C in dry oxygen.
Page 11
OXIDE THICKNESS COLOR CHART

Thick ness 500 700 1000 1200 1500 1700 2000 2200 2500 2700 3000 3100 3200 3400 3500 3600 3700 3900 4100 4200 4400 4600 4700 Color Tan Brown Dark Violet - Red Violet Royal Blue Blue Light Blue - Metallic Blue Metallic - very light Yellow Green LIght Gold or Yellow - Slightly Metallic Gold with slight Yellow Orange Orange - Melon Red Violet Blue - Violet Blue Blue Blue Blue - Blue Green Light Green Green - Yellow Green Yellow Green Yellow Light Orange Carnation Pink Violet Red Red Violet Violet Blue Violet Thickness 4900 5000 5200 5400 5600 5700 5800 6000 6300 6800 7200 7700 8000 8200 8500 8600 8700 8900 9200 9500 9700 9900 10000 Color Blue Blue Blue Green Green Yellow Green GreenYellow
Blue
Yel low -"Yel lowish "(at times app ears to b e Lt gray o r matelli c)
Light Orange or Yellow - Pink Carnation Pink Violet Red "Bluish"(appears violet red, Blue Green, look s gray ish) Blue Blue Blue Green - Green "Yellowish" Orange Salmon Dull, LIght Red Violet Violet Blue Violet Blue Blue Blue Blue Green Dull Yellow Green Yellow - "Yellowish" Orange Carnation Pink
Nitride Thickness = (Oxide Thickness)(Oxide Index/Nitride Index) Eg. Yellow Nitride Thickness = (2000)(1.46/2.00) = 1460 Rochester Institute of Technology
Microelectronic Engineering
PLAY
Page 12
DIFFUSION FROM A CONSTANT SOURCE PLAY STOP N(x,t) = No erfc (x/2 Dt ) N(x,t) Solid Solubility Limit, No Wafer Background Concentration, NBC Xj
p-type
n-type x into wafer
Page 13
ERFC FUNCTION
Concentration/Surface Concentration = N/No
10-0 10-1 10-2 10-3 10-4 10-5 10-6 10-7 10-8 10-9 10-10 10-11 0.0 1.0 2.0 3.0 4.0
= x / 4Dt
PLAY
Page 14
DIFFUSION CONSTANTS AND SOLID SOLUBILITY
DIFFUSION CONSTANTS
BORON PHOSPHOROUS PHOSPHOROUS BORON PHOSPHOROUS
TEMP 900 C 950 1000 1050 1100 1150 1200 1250
DRIVE-IN 1.07E-15 cm2/s 4.32E-15 1.57E-14 5.15E-14 1.55E-13 4.34E-13 1.13E-12 2.76E-12
PRE 2.09e-14 cm2/s 6.11E-14 1.65E-13 4.11E-13 9.61E-13 2.12E-12 4.42E-12 8.78E-12
SOLID SOLUBILITY NOB 7.49E-16 cm2/s 4.75E20 cm-3 3.29E-15 4.65E20 1.28E-14 4.825E20 4.52E-14 5.000E20 1.46E-13 5.175E20 4.31E-13 5.350E20 1.19E-12 5.525E20 3.65E-12 5.700E20
DRIVE-IN
SOLID SOLUBILITY NOP 6.75E20 cm-3 7.97E20 9.200E20 1.043E21 1.165E21 1.288E21 1.410E21 1.533E21
PLAY
Page 15
TEMPERATURE DEPENDENCE OF DIFFUSION CONSTANTS Temperature Dependence:

D = D0 Exp (-EA/kT ) cm2/sec Boron D0 = 0.76 EA = 3.46 k = 8.625E-5
PLAY
eV/K T in Kelvins
Phosphorous D0 = 3.85 EA = 3.66
Temperature Dependence of the Solid Solubility of Boron and Phosphorous in Silicon

NOB = 3.5E17T + 1.325E20 cm-3 NOP = 2.45E18T - 1.53E21 cm-3
T in Celsius T in Celsius
Page 16
DIFFUSION FROM A LIMITED SOURCE N(x,t) = QA(tp) Exp (- x2/4Dt) Dt for erfc predeposit QA (tp) = QA(tp)/Area = 2 No PLAY for ion implant predeposit QA(tp) = Dose
PLAY (Dptp) / = Dose
Where D is the diffusion constant at the drive in temperature and t is the drive in diffusion time, Dp is the diffusion constant at the predeposit temperature and tp is the predeposit time
Page 17
DIFFUSION MASKING CALCULATOR Select Boron or Phosphorous Enter Temperature and Time
From: Hamilton and Howard

Page 18
DIFFUSION MASKING Phosphorous Masking Boron Masking
From: Hamilton and Howard

Rochester Institute of Technology Microelectronic Engineering January 7, 2013 Dr. Lynn Fuller, Professor
Page 19
DIFFUSION AND DRIVE IN CALCULATIONS
DIFFUSION.XLS
Page 20
DIFFUSION FROM A LIMITED SOURCE

GIVEN Starting Wa fer Resistivity Starting Wa fer Type VALUE Rho = n-type = 1 p-type = 1 UNITS 10 ohm-cm 1 1 or 0 0 1 or 0
Pre Deposition Ion Implant Dose Drive-in Temperature Drive-in Time CALCULATE Diffusion Constant at Temperature of Drive-in CALCULATION OF DIFFUSION CONSTANTS Boron Phos phorous CALCULATIONS Substra te Doping = 1 / (q max Rho) RES ULTS Pre deposition Dose xj afte r drive-in = ((4 Dd td/QA) ln (Ns ub ( Ddtd)^0.5))^0.5 average doping Nave = Dos e/xj mobility () at Doping e qual to Nave Sheet Resistance = 1/(q ((Nave))Dos e) Surfa ce Conce ntration = Dose/ (pDt)^0.5 D0 (cm2/s) EA (eV) 0.76 3.46 3.85 3.66
4.00E+15 ions/cm2 1000 C 360 min VALUE UNITS 1.43E-14 cm/se c
IonImplt.xls
VALUE UNITS 4.42E+14 cm-3 VALUE UNITS 4.00E+15 atoms/cm2 1.25 m 3.21E+19 atoms/cm3 57 cm2/V-s 27.6 ohms 1.28E+20 cm-3
Page 21
EXAMPLE 1. A predeposit from a p-type spin-on dopant into a 1E15 cm-3 wafer is done at 1100C for 10 min. Calculate the resulting junction depth and dose.
2. The spin-on dopant is removed and the Boron is driven in for 2 hours at 1100 C. What is the new junction depth?
Page 22
RESISTANCE, RESISTIVITY, SHEET RESISTANCE

Resistance = R = L/Area = s L/w Resistivity = = 1/( q nn + q pp) ohms
PLAY I
ohm-cm
Sheet Resistance = s = 1/ ( q (N) N(x) dx) ~ 1/( q Dose) ohms/square
PLAY
L
s = / t
Area
q = 1.6E-19 coul
slope = 1/R
w t
V R
Page 23
CALCULATION OF CARRIER CONCENTRATIONS

B h o r ni Nc/T^3/2 Nv/T^3/2 1.11E+03 6.63E-34 Js ec 8.85E-14 F/cm 11.7 1.45E+10 cm-3 5.43E+15 2.02E+15 Nd = Ed= Na = Ea= Temp= 3.00E+16 cm-3 0.049 eV below Ec 8.00E+15 cm-3 0.045 eV above Ev 300 K Donor Concentration Acceptor Concentration
Donor and Acceptor Levels (eV above or below Ev or Ec) Boron 0.044 Phos phorous 0.045 Ars enic 0.049 CALCULATIONS: (this program makes a guess at the value of the fermi level and t rys the charge balance) KT/q Eg=Ego-(aT^2/(T+B)) Nc Nv Fermi Level, Ef free electrons , n = Nc exp(-q(Ec-Ef)KT) Ionized donors , Nd+ = Nd*(1+2*exp(q(Ef-Ed)/KT))^(-1) holes , p = Nv exp(-q(Ef-Ev)KT) Ionized accept ors , Na- = Na*(1+2*exp(q(Ea-Ef)/KT))^(-1) Charge Balance = p + Nd+ - n - NaRochester Institute of Technology Microelectronic Engineering
carrier_conc.xls
to minimize 0.026 Volts 1.115 eV 2.82E+19 cm-3 1.34E+01 cm-3 0.9295 eV above Ev 2.17E+16 cm-3 2.97E+16 cm-3 3.43E-15 cm-3 8.00E+15 cm-3 3.22E+12 cm-3
Click on Button to do Calculation Button Button
Page 24
RESISTIVITY OF SILICON VS DOPING

1021
Impurity Concentration, N, cm-3
1020 1019 1018 1017 1016 1015 1014 1013 10-4
= 1/(q(N)N)
Because is a function of N and N is the doping, the relationship between resistivity and N is given in the figure shown, or calculated from equations for (N)
Boron
Phosphorous
10-3
10-2
10-1 100
101
102
103
104
PLAY
Resistivity, ohm-cm
Page 25
ELECTRON AND HOLE MOBILITY

Mobility (cm2/ V sec)
1600 1400 1200 1000 800 600 400 200 0
PLAY
electrons
Electron and hole mobilities in silicon at 300 K as Arsenic Boron functions of the total dopant Phosphorus concentration (N). The values plotted are the results of the curve fitting measurements from several sources. The mobility curves can be generated using the equation below with the parameters shown:
holes
10 ^1 9 10 ^1 7 10 ^1 6 10 ^1 4 10 ^1 5 10 ^1 8 10 ^2 0
10 ^1 3
Total Impurity Concentration (cm-3)
PLAY
(N) = mi+
Parameter min max Nref
( max- min) {1 + (N/Nref)}

Phosphorous 68.5 1414 9.20X10^16 0.711 Boron 44.9 470.5 2.23X10^17 0.719
Institute of Technology FromRochester Muller and Kamins, 3rd Ed., pg 33 Microelectronic Engineering
Arsenic 52.2 1417 9.68X10^16 0.680 Page 26
TEMPERATURE EFFECTS ON MOBILITY

Derived empirically for silicon for T in K between 250 and 500 K and for N (total dopant concentration) up to 1 E20 cm-3
n (T,N) = 88 Tn-0.57 +
1250 Tn-2.33 1 + [ N / (1.26E17 Tn

2.4)]
^0.88 Tn -0.146
PLAY
p (T,N) = 54.3 Tn-0.57 + 1 + [ N / (2.35E17 Tn 407 Tn-2.33
2.4)]^
0.88 Tn -0.146
Where Tn = T/300 From Muller and Kamins, 3rd Ed., pg 33

Page 27
EXCELL WORKSHEET TO CALCULATE MOBILITY

MICROELECTRONIC ENGINEERING CALCULATION OF MOBILITY 3/13/2005 Dr. Lynn Fuller
To use this spreadsheed change the values in the white boxes. The res t of the s heet is protected and should not be changed unless you are s ure of the consequences. The calculated res ults are shown in the purple boxes. CONSTANTS Tn = T/300 = 1.22 VARIABLES Temp= N total 365 K 1.00E+18 cm-3 n-type p-type <100> CHOICES 1=yes , 0=no 1 0
Kamins , Muller and Chan; 3rd Ed., 2003, pg 33 mobility= 163 cm2/(V-s ec)
mobility.xls
Page 28
EXCELL WORKSHEET TO CALCULATE RESISTANCE
Resistors_Poly.xls
Page 29
UNIFORMLY DOPED PN JUNCTION

P+ P+ BB+ Phosphrous donor atom and electron Ionized Immobile Phosphrous donor atom Ionized Immobile Boron acceptor atom Boron acceptor atom and hole
Space Charge Layer p = NA

B+ B+ BB-
n = ND
B-
P+
P+ P+
P+ P+
P+ -
P+
+VR
p-type
P+ P+
n-type
charge density, qNA W1 =qND W2 -W1 -qNA Electric Field,
+qND x W2
Potential,
+VR
Page 30
UNIFORMLY DOPED PN JUNCTION

Built in Voltage:
ni = 1.45E10 cm-3 Width of Space Charge Layer, W: with reverse bias of VR volts
= KT/q
ln (NA ND /ni2)
W = ( W1 + W2 )
= [ (2 / q) ( +VR) (1/NA + 1/ND)]1/2 W2 width on n-side W2 = W [NA/(NA + ND)]
W1 width on p-side W1 = W [ND/(NA + ND)] Maximum Electric Field:
- [(2q/ ) ( +VR) (NA ND/(NA + ND))]1/2
Junction Capacitance per unit area:
Cj = r/W
= r/ [(2/ q) ( +VR) (1/NA + 1/ND)]1/2 = o r =8.85E-12 (11.7) F/m = 8.85E-14 (11.7) F/cm
Page 31
EXAMPLE Example: If the doping concentrations are Na=1E15 and Nd=3E15 cm-3 and the reverse bias voltage is 0, then find the built in voltage, width of the space charge layer, width on the n-side, width on the pside, electric field maximum and junction capacitance. Repeat for reverse bias of 10, 40, and 100 volts. = Vbi = KT/q ln (NA ND /ni2) = W = (W1 + W2 ) = [ (2 /q) ( +VR) (1/NA + 1/ND)]1/2
W1 = W2 = Emax = Cj =
Page 32
EXAMPLE CALCULATIONS
PN.XLS
Page 33
LONG CHANNEL THRESHOLD VOLTAGE, VT

Xox
Flat-band Voltage VFB =
- Qss Cox p-type substrate (n-channel)
ms
1 X (x) dx Cox 0 Xox n-type substrate (p-channel) Qss = q Nss
Bulk Potential : Work Function: Difference
p = -KT/q ln (NA /ni) n = +KT/q ln (ND /ni) M S = M - ( X + Eg/2q + [ p]) M S = M - ( X + Eg/2q - [ n])
4 s[ p] qNa 4 s[ n] qNd 2 s q Na ( 2[ p]) 2 s q Nd ( 2[ n])
Maximum Depletion Width:
(Wdmax)
Threshold Voltage: VT = VFB + 2 [ p] + 1 p-type substrate Cox Threshold Voltage: n-type substrate VT = VFB - 2 [ n] Cox
1
PLAY
Page 34
LONG CHANNEL Vt
Gate work function, n+, p+, aluminum Substrate doping, Nd or Na Oxide thickness, Xox Surface State Density, Nss or Qss also Substrate to Source voltage difference Threshold Voltage +3 +2 +1 250 150 650 +4 +3 +2 +1 0 -1 -2
PLAY
0 -1
n+ poly gate left scale p+ poly gate right scale -2 Qf = 0 Vbs = 0 -3 implant dose = zero
150 250 650 1014 1015 1016 1017 Substrate doping, Nd or Na

Page 35
VT ADJUST IMPLANT Assume that the total implant is shallow (within Wdmax) +/- Vt = q Dose*/Cox where Dose* is the dose that is added to the Si Cox is gate oxide capacitance/cm2 Boron gives + shift Cox = or / Xox Phosphorous gives - shift Example: To shift +1.0 volts implant Boron through 1000 Kooi oxide at an energy to place the peak of the implant at the oxide/silicon interface. Use a Dose = Vt Cox/q =(1.0)(3.9)(8.85E-14)/(1.6E-16)=2.16E11 ions/cm2 but multiply by 2 since 1/2 goes into silicon
PLAY
Page 36
MOSFET THRESHOLD VOLTAGE CALCULATION
MOSFETVT.XLS
Page 37
ION IMPLANT EQUATIONS

Gaussian Implant Profile concentration cm-3 N -(X-Rp)2 N(x) = exp [ ] 2 Rp 2Rp2 Rp = Range Rp = Straggle N = Dose = After Anneal N N(x) = 2 Rp2 + 2Dt exp
after implant after anneal at 950 C, 15 min
} From Curves
Ni
I mqA dt
Approximation used in Vt calculations
-(X-Rp)2 2(Rp2+Dt)
xi Approximation N = Ni xi
where D is diffusion constant at the anneal temperature t is time of anneal

PLAY
Page 38
ION IMPLANT RANGE

1 Projected Range, Rp ,(um)
As
10-1
B P
10-2 10
Sb
100 Implantation Energy (KeV)
1,000
PLAY
Page 39
ION IMPLANT STANDARD DEVIATION

Standard Deviation, Rp ,(um)
0.1
B
0.01
P As Sb
0.001 10
100 Implantation Energy (KeV)
1,000
PLAY
Page 40
ION IMPLANT MASKING CALCULATOR

Rochester Institute of Technology Microelectronic Engineering 11/20/2004 IMPLANT MASK CALCULATOR DOPANT SPECIES B11 1 BF2 0 P31 0 Lance Barron Dr. Lynn Fuller
Enter 1 - Ye s MASK TYPE Resist Poly Oxide Nitride
0 - No in white boxe s ENERGY 60
0 1 0 0
KeV
Thickne ss to Ma sk >1E15/cm3 Surface Concentration
4073.011 Angstroms
This calculator is based on Silvaco Suprem simulations using the Dual Pearson model.
In powerpoint click on spread sheet to change settings for a new calculation

Lance Baron, Fall 2004

Page 41
REFERENCES
1. Basic Integrated Circuit Engineering, Douglas J. Hamilton, William G. Howard, McGraw Hill Book Co., 1975. 2. Micro Electronics Processing and Device Design, Roy a. Colclaser, John Wiley & Sons., 1980. 3. Device Electronics for Integrated Circuits, Richard S. Muller, Theodore I. Kamins, Mansun Chan, John Wiley & Sons.,3rd Ed., 2003. 4. VLSI Technology, Edited by S.M. Sze, McGraw-Hill Book Company, 1983. 5. Silicon Processing for the VLSI Era, V ol. 1., Stanley Wolf, Richard Tauber, Lattice Press, 1986. 6. The Science and Engineering of Microelectronic Fabrication, Stephen A. Campbell, Oxford University Press, 1996.
Page 42
HOMEWORK - REVIEW OF IC TECHNOLOGY

1. If a window is etched in 5000 of oxide and the wafer is oxidized again for 50 min in wet O2 at 1050 C what is the new thickness (where it was 5000 ), the thickness in the etch window, and the step height in the silicon if all the oxide is etched off the wafer. Draw a picture showing original Si surface. 2. A Boron diffusion is done into 5 ohm-cm n-type wafer involving two steps. First a short predeposit at 950 C for 30 min., followed by removal of the diffusion source and a drive in at 1100 C for 2 hours. Calculate the junction depth and the sheet resistance of the diffused layers. Estimate the oxide thickness needed to mask this diffusion. 3. For a pn junction with the p side doping of 1E17 and the n side at 1E15 calculate, width of space charge layer, width on p side, on n side, capacitance per unit area, max electric field. 4. Calculate the threshold voltage for an aluminum gate PMOSFET fabricated on an n-type wafer with doping of 5E15, a surface state density of 7E10, and gate oxide thickness of 150 . What is the threshold voltage if the surface state density is 3E11? 5. Calculate the ion implant dose needed to shift the threshold voltage found in the problem above to -1 Volts.
PLAY
Page 43
HOMEWORK - EXACT CALCULATION OF SHEET RESISTANCE FOR A DIFFUSED LAYER 1. A Boron p-type layer is diffused into an n-type silicon wafer (1E15 cm-3) at 1100 C for 1 hour. Calculate the exact value of the sheet resistance and compare to the approximate value.
Sheet Resistance = s = 1/ ( q (N) N(x) dx) ~ 1/( q Dose) ohms/square
(N) =
min
for Boron min 44.9 max 470.5 Nref 2.23X10^17 0.719
+ {1 + (N/Nref) }
( max- min)
Let QA(tp) = 5.633E15 cm-2 D= 1.55E-13 cm2/s t = 1 hour
N(x,t) = QA(tp) Exp (- x2/4Dt) Dt

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HW SOLUTION - EXACT CALCULATION OF SHEET RESISTANCE FOR A DIFFUSED LAYER Divide the diffused layer up into 100 slices and for each slice find the doping and exact mobility. Calculate the sheet resistance from the reciprocal of the sum of the conductance of each slice. N(x)
NBC xj
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Review of IC Fabrication Technology

MICROELECTRONIC ENGINEERING ROCHESTER INSTITUTE OF TECHNOLOGY

A Review of IC Fabrication Technology

Rochester Institute of Technology Microelectronic Engineering

January 7, 2013 Dr. Lynn Fuller, Professor