VND1NV04 / VNN1NV04 / VNS1NV04

OMNIFET II: FULLY AUTOPROTECTED POWER MOSFET

TYPE VND1NV04 VNN1NV04 VNS1NV04

RDS(on) 250 m

Ilim 1.7 A

Vclamp
2

40 V
1 2

n LINEAR CURRENT LIMITATION n THERMAL SHUT DOWN n SHORT CIRCUIT PROTECTION n INTEGRATED CLAMP n LOW CURRENT DRAWN FROM INPUT PIN n DIAGNOSTIC FEEDBACK THROUGH INPUT

SOT-223

SO-8

3 1

TO-252 (DPAK)

PIN

n ESD PROTECTION n DIRECT ACCESS TO THE GATE OF THE

ORDER CODES: TO-252 (DPAK) SOT-223 SO-8 VND1NV04 VNN1NV04 VNS1NV04

POWER MOSFET (ANALOG DRIVING) n COMPATIBLE WITH STANDARD POWER MOSFET DESCRIPTION The VND1NV04, VNN1NV04, VNS1NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power BLOCK DIAGRAM

MOSFETS from DC up to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.

DRAIN

2 Overvoltage Clamp

INPUT

Gate Control

Over Temperature

Linear Current Limiter

3
SOURCE
FC01000

February 2003

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VND1NV04 / VNN1NV04 / VNS1NV04

ABSOLUTE MAXIMUM RATING
Symbol VDS VIN IIN RIN MIN ID IR VESD1 VESD2 Ptot Tj Tc Tstg Parameter Drain-source Voltage (VIN=0V) Input Voltage Input Current Minimum Input Series Impedance Drain Current Reverse DC Output Current Electrostatic Discharge (R=1.5K, C=100pF) Electrostatic Discharge on output pin only (R=330, C=150pF) Total Dissipation at Tc=25C Operating Junction Temperature Case Operating Temperature Storage Temperature SOT-223 Value SO-8 Internally Clamped Internally Clamped +/-20 330 Internally Limited -3 4000 16500 7 8.3 Internally limited Internally limited -55 to 150 35 DPAK Unit V V mA A A V V W C C C

CONNECTION DIAGRAM (TOP VIEW)

SO-8 Package (*)

SOURCE SOURCE SOURCE INPUT

DRAIN DRAIN DRAIN

DRAIN

(*) For the pins configuration related to SOT-223 and DPAK see outline at page 1.

CURRENT AND VOLTAGE CONVENTIONS ID VDS

DRAIN IIN RIN INPUT SOURCE

VIN

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THERMAL DATA
Symbol Rthj-case Rthj-lead Rthj-amb
(*) When

Parameter Thermal Resistance Junction-case}}} Thermal Resistance Junction-lead Thermal Resistance Junction-ambient MAX MAX MAX

SOT-223 18 70 (*)

Value SO-8 15 65(*)

DPAK 3.5 54 (*)

Unit C/W C/W C/W

mounted on a standard single-sided FR4 board with 50mm2 of Cu (at least 35 m thick) connected to all DRAIN pins.

ELECTRICAL CHARACTERISTICS (-40C < Tj < 150C, unless otherwise specified) OFF
Symbol VCLAMP VCLTH VINTH IISS VINCL IDSS Parameter Drain-source Clamp Voltage Drain-source Clamp Threshold Voltage Input Threshold Voltage Supply Current from Input Pin Input-Source Clamp Voltage Zero Input Voltage Drain Current (VIN=0V) Test Conditions VIN=0V; ID=0.5A VIN=0V; ID=2mA VDS=VIN; ID=1mA VDS=0V; VIN=5V IIN=1mA IIN=-1mA VDS=13V; VIN=0V; Tj=25C VDS=25V; VIN=0V 6 -1.0 Min 40 36 0.5 100 6.8 2.5 150 8 -0.3 30 75 Typ 45 Max 55 Unit V V V A V A

ON
Symbol RDS(on) Parameter Static Drain-source On Resistance Test Conditions VIN=5V; ID=0.5A; Tj=25C VIN=5V; ID=0.5A Min Typ Max 250 500 Unit m

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ELECTRICAL CHARACTERISTICS (continued) (Tj=25C, unless otherwise specified) DYNAMIC
Symbol gfs (**) COSS Parameter Forward Transconductance Output Capacitance Test Conditions VDD=13V; ID=0.5A VDS=13V; f=1MHz; VIN=0V Min Typ 2 90 Max Unit S pF

SWITCHING
Symbol td(on) tr td(off) tf td(on) tr td(off) tf (dI/dt)on Qi Parameter Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Current Slope Total Input Charge Test Conditions VDD=15V; ID=0.5A Vgen=5V; Rgen=RIN MIN=330 (see figure 1) VDD=15V; ID=0.5A Vgen=5V; Rgen=2.2K (see figure 1) VDD=15V; ID=1.5A Vgen=5V; Rgen=RIN MIN=330 VDD=12V; ID=0.5A; VIN=5V Igen=2.13mA (see figure 5) Min Typ 70 170 350 200 0.25 1.3 1.8 1.2 5.0 5.0 Max 200 500 1000 600 1.0 4.0 5.5 4.0 Unit ns ns ns ns s s s s A/s nC

SOURCE DRAIN DIODE

Symbol VSD (*) trr Qrr IRRM Parameter Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Test Conditions ISD=0.5A; VIN=0V ISD=0.5A; dI/dt=6A/s Min Typ 0.8 205 100 0.75 Max Unit V ns C A

VDD=30V; L=200H Reverse Recovery Current (see test circuit, figure 2)

PROTECTIONS (-40C < Tj < 150C, unless otherwise specified)

Symbol Ilim tdlim Tjsh Tjrs Igf Eas Parameter Drain Current Limit Step Response Current Limit Overtemperature Shutdown Overtemperature Reset Fault Sink Current Single Pulse Avalanche Energy Test Conditions VIN=5V; VDS=13V VIN=5V; VDS=13V Min 1.7 Typ Max 3.5 Unit A s 200 C C mA mJ

2.0 150 135 10 55 175

VIN=5V; VDS=13V; Tj=Tjsh Starting Tj=25C; VDD=24V VIN=5V; Rgen=RIN MIN=330; L=50mH (see figures 3 & 4)

15

20

(**) Pulsed: Pulse duration = 300s, duty cycle 1.5%

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VND1NV04 / VNN1NV04 / VNS1NV04

PROTECTION FEATURES During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path. The device then behaves like a standard power MOSFET and can be used as a switch from DC up to 50KHz. The only difference from the users standpoint is that a small DC current IISS (typ. 100A) flows into the INPUT pin in order to supply the internal circuitry. The device integrates: - OVERVOLTAGE CLAMP PROTECTION: internally set at 45V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads. - LINEAR CURRENT LIMITER CIRCUIT: limits the drain current ID to Ilim whatever the INPUT pin voltages. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh. - OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs in the range 150 to 190 C, a typical value being 170 C. The device is automatically restarted when the chip temperature falls of about 15C below shut-down temperature. - STATUS FEEDBACK: in the case of an overtemperature fault condition (Tj > Tjsh), the device tries to sink a diagnostic current Igf through the INPUT pin in order to indicate fault condition. If driven from a low impedance source, this current may be used in order to warn the control circuit of a device shutdown. If the drive impedance is high enough so that the INPUT pin driver is not able to supply the current Igf, the INPUT pin will fall to 0V. This will not however affect the device operation: no requirement is put on the current capability of the INPUT pin driver except to be able to supply the normal operation drive current IISS. Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit.

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VND1NV04 / VNN1NV04 / VNS1NV04

Figure 1: Switching Time Test Circuit for Resistive Load

VD Rgen Vgen

ID 90%

tr td(on)

10% td(off)

tf t

Vgen

Figure 2: Test Circuit for Diode Recovery Times

A D I

A
FAST DIODE

OMNIFET
S B

L=100uH B

330 Rgen
I

VDD

OMNIFET
S

Vgen

8.5

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Figure 3: Unclamped Inductive Load Test Circuits Figure 4: Unclamped Inductive Waveforms

RGEN VIN PW

Figure 5: Input Charge Test Circuit

Figure 6: Thermal Impedance for SOT-223

VIN

GEN

ND8003

Figure 7: Thermal Impedance for DPAK/IPAK

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VND1NV04 / VNN1NV04 / VNS1NV04

Source-Drain Diode Forward Characteristics
Vsd (mV)
1000

Static Drain Source On Resistance

Rds(on) (ohms)
4.5
Tj=-40C

4
950

Vin=2.5V
Vin=0V
3.5 3 2.5

900

850

2
800

1.5
Tj=25C

1
750
Tj=150C

0.5
700 0 2 4 6 8 10 12 14

0 0 0.05 0.1 0.15 0.2 0.25 0.3

Id (A)

Id(A)

Derating Curve

Static Drain-Source On resistance Vs. Input Voltage

Rds(on) (mohms)
500 450

Id=0.5A
400
Tj=150C

350 300 250 200

Tj=25C

150
Tj=-40C

100 50 0 3 3.5 4 4.5 5 5.5 6 6.5 7

Vin(V)

Static Drain-Source On resistance Vs. Input Voltage

Rds(on) (mohms)
500
Tj=150C

Transconductance

Gfs (S)
6 5.5 5
Id=1.5A Id=1A

450 400 350 300 250 200

Tj=-40C Tj=25C

Vds=13V

Tj=-40C

4.5 4 3.5 3 2.5

Tj=25C

Tj=150C

Id=1.5A Id=1A Id=1.5A Id=1A

150 100 50 0 3 3.5 4 4.5 5 5.5 6 6.5

2 1.5 1 0.5 0 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2

Vin(V)

Id(A)

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VND1NV04 / VNN1NV04 / VNS1NV04

Static Drain-Source On Resistance Vs. Id
Rds(on) (mohms)
500 450 400 350 300 250
Vin=3.5V Tj=150C Vin=5V Vin=3.5V

Transfer Characteristics
Idon(A)
2.25 2

Tj=25C

Vds=13.5V
1.75 1.5 1.25 1 0.75 0.5 0.25

200 150 100 50

Tj=25C Vin=5V Vin=3.5V Tj=-40C Vin=5V

Tj=150C Tj=-40C

0 0 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 1.5 1.75 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 4.25 4.5 4.75 5

Id(A)

Vin(V)

Turn On Current Slope

di/dt(A/us)
6

Turn On Current Slope

di/dt(A/us)
1.4

1.2

Vin=5V Vdd=15V Id=1.5A

Vin=3.5V Vdd=15V Id=1.5A

0.8

0.6

0.4

0 0 500 1000 1500 2000 2500

0.2 0 500 1000 1500 2000 2500

Rg(ohm)

Rg(ohm)

Input Voltage Vs. Input Charge

Vin (V)
6

Turn off drain source voltage slope

dv/dt(V/us)
350

300

Vds=12V Id=0.5A
4

250

Vin=5V Vdd=15V Id=0.5A

200 3 150 2 100 1

50

0 0 1 2 3 4 5 6

0 0 500 1000 1500 2000 2500

Qg (nC)

Rg(ohm)

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VND1NV04 / VNN1NV04 / VNS1NV04

Turn Off Drain-Source Voltage Slope
dv/dt(V/us)
350

Capacitance Variations
C(pF)
225

300

200

250

Vin=3.5V Vdd=15V Id=0.5A

175

f=1MHz Vin=0V

200

150

150

125

100

100

50

75

0 0 500 1000 1500 2000 2500

50 0 5 10 15 20 25 30 35

Rg(ohm)

Vds(V)

Switching Time Resistive Load

t(us)
2 1.75 1.5 1.25 1 0.75

Switching Time Resistive Load

t(ns)
550 500

Vdd=15V Id=0.5A Vin=5V

td(off)

450 400

tr

Vdd=15V Id=0.5A Rg=330ohm

tr
350

tf

300 250

td(off)

tf
200 150

0.5

td(on)
0.25 0 0 250 500 750 1000 1250 1500 1750 2000 2250 2500

100 50 0 3.25

td(on)

3.5

3.75

4.25

4.5

4.75

5.25

Rg(ohm)

Vin(V)

Output Characteristics
ID(A)
2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 1 2 3 4 5 6 7 8 9 10 11 12
Vin=3V Vin=5.5V Vin=4.5V Vin=3.5V

Normalized On Resistance Vs. Temperature

Rds(on) (mOhm)
2.25

1.75

Vin=5V Id=0.5A

1.5

1.25

0.75

0.5 -50 -25 0 25 50 75 100 125 150 175

VDS(V)

Tc (C)

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VND1NV04 / VNN1NV04 / VNS1NV04

Normalized Input Temperature
Vinth (V)
2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 175

Threshold

Voltage

Vs.

Normalized Current Temperature

Ilim (A)
5 4.5

Limit

Vs.

Junction

Vds=Vin Id=1mA

4 3.5 3 2.5 2 1.5 1 0.5 0 -50 -25

Vin=5V Vds=13V

25

50

75

100

125

150

175

Tc (C)

Tc (C)

Step Response Current Limit

Tdlim(us)
2.4

2.3

Vin=5V Rg=330ohm
2.2

2.1

1.9 5 10 15 20 25 30 35

Vdd(V)

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VND1NV04 / VNN1NV04 / VNS1NV04

SOT-223 MECHANICAL DATA

mm. DIM. MIN. A B B1 c D e e1 E H V A1 0.02 0.1 3.3 6.7 0.6 2.9 0.24 6.3 0.7 3 0.26 6.5 2.3 4.6 3.5 7 3.7 7.3 10 (max) 0.0008 0.004 0.13 0.264 TYP MAX. 1.8 0.85 3.15 0.35 6.7 0.024 0.114 0.009 0.248 0.027 0.118 0.01 0.256 0.09 0.181 0.138 0.276 0.146 0.287 MIN. TYP. MAX. 0.071 0.033 0.124 0.014 0.264 inch

0046067

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VND1NV04 / VNN1NV04 / VNS1NV04

SO-8 MECHANICAL DATA

mm. DIM. MIN. A a1 a2 a3 b b1 C c1 D E e e3 F L M F 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 TYP MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 inch

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VND1NV04 / VNN1NV04 / VNS1NV04

TO-252 (DPAK) MECHANICAL DATA

DIM. A A1 A2 B B2 C C2 D D1 E E1 e G H L2 L4 R V2 Package Weight 0 0.60 0.2 8 Gr. 0.29 4.40 9.35 0.8 1.00 6.40 4.7 2.28 4.60 10.10 mm. MIN. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.1 6.60 TYP MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20

P032P

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VND1NV04 / VNN1NV04 / VNS1NV04

DPAK FOOTPRINT
A

TUBE SHIPMENT (no suffix)

1 .6

6 .7

1 .8

3 .0

2 .3 6 .7 2 .3
B

Base Q.ty Bulk Q.ty Tube length ( 0.5) A B C ( 0.1) All dimensions are in mm.

75 3000 532 6 21.3 0.6

TAPE AND REEL SHIPMENT (suffix 13TR)

REEL DIMENSIONS
Base Q.ty Bulk Q.ty A (max) B (min) C ( 0.2) F G (+ 2 / -0) N (min) T (max) 2500 2500 330 1.5 13 20.2 16.4 60 22.4

TAPE DIMENSIONS
According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 ( 0.1) P D ( 0.1/-0) D1 (min) F ( 0.05) K (max) P1 ( 0.1) 16 4 8 1.5 1.5 7.5 6.5 2
End

All dimensions are in mm.

Start Top cover tape 500mm min Empty components pockets saled with cover tape. User direction of feed 500mm min No components Components No components

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VND1NV04 / VNN1NV04 / VNS1NV04

SOT-223 TAPE AND REEL SHIPMENT (suffix 13TR)

REEL DIMENSIONS
Base Q.ty Bulk Q.ty A (max) B (min) C ( 0.2) F G (+ 2 / -0) N (min) T (max) 1000 1000 330 1.5 13 20.2 12.4 60 18.4

TAPE DIMENSIONS
According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb. 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 ( 0.1) P D ( 0.1/-0) D1 (min) F ( 0.05) K (max) P1 ( 0.1) 12 4 8 1.5 1.5 5.5 4.5 2

All dimensions are in mm.

End

Start Top cover tape 500mm min Empty components pockets saled with cover tape. User direction of feed 500mm min No components Components No components

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VND1NV04 / VNN1NV04 / VNS1NV04

SO-8 TUBE SHIPMENT (no suffix)

Base Q.ty Bulk Q.ty Tube length ( 0.5) A B C ( 0.1)

All dimensions are in mm.

100 2000 532 3.2 6 0.6

TAPE AND REEL SHIPMENT (suffix 13TR) REEL DIMENSIONS

Base Q.ty Bulk Q.ty A (max) B (min) C ( 0.2) F G (+ 2 / -0) N (min) T (max) 2500 2500 330 1.5 13 20.2 12.4 60 18.4

All dimensions are in mm.

TAPE DIMENSIONS
According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 ( 0.1) P D ( 0.1/-0) D1 (min) F ( 0.05) K (max) P1 ( 0.1) 12 4 8 1.5 1.5 5.5 4.5 2
End

All dimensions are in mm.

Start Top cover tape 500mm min Empty components pockets saled with cover tape. User direction of feed 500mm min No components Components No components

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VND1NV04 / VNN1NV04 / VNS1NV04

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2003 STMicroelectronics - Printed in ITALY- All Rights Reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com

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