TIP105/TIP106/TIP107 PNP Epitaxial Silicon Darlington Transistor

October 2008

TIP105/TIP106/TIP107
PNP Epitaxial Silicon Darlington Transistor
Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use Complementary to TIP100/101/102

Equivalent Circuit C

TO-220 2.Collector 3.Emitter

R1 R2 E

1.Base

R1 @ 10k W R2 @ 0.6k W

Absolute Maximum Ratings*

Symbol VCBO Collector-Base Voltage

T a = 25C unless otherwise noted

Parameter : TIP105 : TIP106 : TIP107

Ratings - 60 - 80 - 100 - 60 - 80 - 100 -5 -8 - 15 -1 2 80 150 - 65 ~ 150

Units V V V V V V V A A A W W C C

VCEO

Collector-Emitter Voltage : TIP105 : TIP106 : TIP107 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25C) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature

VEBO IC ICP IB PC TJ TSTG

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

2007 Fairchild Semiconductor Corporation TIP105/TIP106/TIP107 Rev. 1.0.0 1

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TIP105/TIP106/TIP107 PNP Epitaxial Silicon Darlington Transistor

Electrical Characteristics* Ta=25C unless otherwise noted

Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : TIP105 : TIP106 : TIP107 Collector Cut-off Current : TIP105 : TIP106 : TIP107 Collector Cut-off Current : TIP105 : TIP106 : TIP107 Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance VCB = -60V, IE = 0 VCB = -80V, IE = 0 VCB = -100V, IE = 0 VBE= -5V, IC = 0 VCE = -4V, IC = -3A VCE = -4V, IC = -8A IC = -3A, IB = -6mA IC = -8A, IB = -80mA VCE = -4V, IC = -8A VCB = -10V, IE = 0, f = 0.1MHz 1000 200 -50 -50 -50 -2 20000 -2 -2.5 -2.8 300 V V V pF mA mA mA mA VCE = -30V, IB = 0 VCE = -40V, IB = 0 VCE = -50V, IB = 0 -50 -50 -50 mA mA mA Test Condition IC = -30mA, IB = 0 Min. -60 -80 -100 Typ. Max. Units V V V

ICEO

ICBO

IEBO hFE VCE(sat) VBE(on) Cob

* Pulse Test: Pulse Width300ms, Duty Cycle2%

2007 Fairchild Semiconductor Corporation TIP105/TIP106/TIP107 Rev. 1.0.0 2

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TIP105/TIP106/TIP107 PNP Epitaxial Silicon Darlington Transistor

Typical Characteristics

-5

IB = -1000mA

10k

IB = -800mA IB = -700mA IB = -600mA

VCE = -4V

IC[A], COLLECTOR CURRENT

-4

IB = -900mA

-3

IB = -500mA IB = -400mA

hFE, DC CURRENT GAIN

1k

-2

IB = -300mA
-1

IB = -200mA
-0 -0 -1 -2 -3 -4 -5
100 -0.1 -1 -10

VCE[V], COLLECTOR-EMITTER VOLTAGE

Ic[A], COLLECTOR CURRENT

Figure 1. Static Characteristic

Figure 2. DC current Gain

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

-100k

10k

IC = 500 IB

f = 0.1 MHz IE = 0

-10k

Cob[pF], CAPACITANCE
-10 -100

1k

100

VBE(sat)
-1k

VCE(sat)

10

-100 -0.1

-1

1 -0.1

-1

-10

-100

IC[A], COLLECTOR CURRENT

VCB[V], COLLECTOR-BASE VOLTAGE

Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

Figure 4. Collector Output Capacitance

-100

100 90

IC[mA], COLLECTOR CURRENT

1ms
-10

PC[W], POWER DISSIPATION

80 70 60 50 40 30 20 10 0

s 0m 10

DC

5m

-1

-0.1

TIP105 TIP106 TIP107

-0.01 -0.1 -1 -10 -100

25

50
o

75

100

125

150

175

VCE[V], COLLECTOR-EMITTER VOLTAGE

TC[ C], CASE TEMPERATURE

Figure 5. Safe Operating Area

Figure 6. Power Derating

2007 Fairchild Semiconductor Corporation TIP105/TIP106/TIP107 Rev. 1.0.0 3

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TIP105/TIP106/TIP107 PNP Epitaxial Silicon Darlington Transistor

Mechanical Dimensions

TO220

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TIP105/TIP106/TIP107 PNP Epitaxial Silicon Darlington Transistor

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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I31

Preliminary

First Production

No Identification Needed

Full Production

Obsolete

Not In Production

2008 Fairchild Semiconductor Corporation TIP105/TIP106/TIP107 Rev. A1 5

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