1SS355

Diodes

Switching diode
1SS355

zApplications zDimensions (Unit : mm) zLand size figure (Unit : mm)

High speed switching
1.25±0.1 0.1±0.1
　　　 0.05
0.9MIN.

0.8MIN.
zFeatures

2.1
1) Ultra small mold type.(UMD2)

1.7±0.1

2.5±0.2
2) High reliability.

UMD2
zConstruction
Silicon epitaxial planar
0.7±0.2
0.3±0.05 　　　 0.1 zStructure
ROHM : UMD2
JEDEC : S0D-323
JEITA : SC-90/A
dot (year week factory)

zTaping specification (Unit : mm)

φ1.55±0.05 0.3±0.1
4.0±0.1 2.0±0.05
1.75±0.1
3.5±0.05

8.0±0.2

2.8±0.1
2.75

1.40±0.1 4.0±0.1 φ1.05

1.0±0.1

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit
Reverse voltage (repetitive peak) VRM 90 V
Reverse voltage (DC) VR 80 V
Forward current IFM 225 mA
Average rectified forward current Io 100 mA
Surge current （t=1s） Isurge 500 mA
Junction temperature Tj 150 ℃
Storage temperature Tstg -55 to +150 ℃

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage VF - - 1.2 V IF=100mA
Reverse current IR - - 0.1 µA VR=80V
Capacitance between terminals Ct - - 3 pF VR=0.5V , f=1MHz
Reverse recovery time trr - - 4 ns VR=6V , IF=10mA , RL=100Ω

Rev.B 1/3
 1SS355
Diodes

zElectrical characteristic curves (Ta=25°C)

100 10 10
Ta=125℃ f=1MHz
Ta=125℃
FORWARD CURRENT:IF(mA)

REVERSE CURRENT:IR(uA)

CAPACITANCE BETWEEN
Ta=75℃

TERMINALS:Ct(pF)
10
Ta=75℃ 0.1
Ta=25℃ Ta=25℃
1
0.01 Ta=-25℃
1 Ta=-25℃

0.001

0.1 0.0001 0.1

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 20 40 60 80 100 120 0 10 20 30
FORWARD VOLTAGE：VF(mV) REVERSE VOLTAGE：VR(V) REVERSE VOLTAGE:VR(V)
VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS

950 100 1
Ta=25 90 Ta=25℃ 0.99 Ta=25℃
FORWARD VOLTAGE:VF(mA)

IF=100mA VR=80V VR=0.5V

REVERSE CURRENT:IR(nA)

940 80 0.98

CAPACITANCE BETWEEN
n=30pcs n=30pcs f=1MHz
70 0.97 n=10pcs

TERMINALS:Ct(pF)
930 60 0.96
50 0.95
IF(mA)

AVE:0.961pF
920 40 0.94
30 0.93
910 AVE:922.4mV 20 0.92
10 AVE:31.7nA 0.91
900 0 0.9

VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP

20 3 20
　Ta=25℃
RESERVE RECOVERY TIME:trr(ns)

Ifsm 1cyc Ifsm

　VR=6V
FORWARD CURRENT:IFSM(A)

FORWARD CURRENT:IFSM(A)

2.5
15 　IF=10mA 15 8.3ms 8.3ms
8.3ms 　RL=100Ω
2 1cyc
PEAK SURGE

PEAK SURGE

10 1.5 10

1
5 5
AVE:13.6A AVE:1.3ns
0.5

0 0 0
0.1 1 10 100
IFSM DISRESION MAP trr DISPERSION MAP NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS

100 1000 0.001

Rth(j-a)
THAERMAL IMPEDANCE:Rth (℃/W)
FORWARD CURRENT:IFSM(A)

Ifsm
t
DISSIPATION:PR (W)
REVERSE POWER

100
PEAK SURGE

Rth(j-c)
TRANSIENT

10 Mounted on epoxy board 0.0005

D=1/2
IM=1mA IF=10mA
10 DC
Sin(θ＝180)
1ms time
300us

1 1 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 0 20 40 60 80 100 120
TIME:t(ms) TIME:t(s) REVERSE VOLTAGE:VR(V)
IFSM-t CHARACTERISTICS Rth-t CHARACTERISTICS VR-PR CHARACTERISTICS

Rev.B 2/3
 1SS355
Diodes

0.20 0.20 20
DC DC
FORWARD CURRENT:Io(A)

DDISCHARGE TEST ESD(KV)

FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED

0.15 0.15 15

AVERAGE RECTIFIED
D=1/2

ELECTROSTATIC
D=1/2
Sin(θ＝180) AVE:9.4kV

0.10 0.10 10
Sin(θ＝180)
0A Io
Io AVE:2.4kV
0.05 0A 0.05 0V 5
VR
0V VR t
t D=t/T
D=t/T VR=40V
VR=40V T Tj=125℃
0.00 T Tj=125℃ 0.00 0 C=200pF C=100pF
0 25 50 75 100 125 0 25 50 75 100 125 R=0Ω R=1.5kΩ
AMBIENT TEMPERATURE:Ta(℃) CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Ta) Derating Curveﾞ(Io-Tc) ESD DISPERSION MAP

Rev.B 3/3
Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1