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Introduction
Equilibrium (thermal equilibrium): no external forces such as voltages, electric fields, magnetic fields, or temperature gradient acting on the semiconductor. Intrinsic semiconductor: (undoped semiconductor), is a pure semiconductor with no impurity or defects.
The number of charge carriers is therefore determined by the properties of the material itself instead of the amount of impurities
Extrinsic semiconductor: (doped semiconductor), electrical properties of semiconductor can be altered in desirable way by adding controlled amounts of specific impurity atoms (dopant atoms). Depending on the type of dopant atom added, the dominant charge carrier in the semiconductor can be electrons in the conduction band or holes in the valence band
n0 =
g (E) f
c
( E )dE
Ec
Assume that EF is within the energy bandgap and E-EF>>KT For an intrinsic semiconductor, EF is at the middle of bandgap, so for energy levels in the conduction band E>EC there is E-EF>>KT (KT 25 meV for T=300K).
Assume that EF is within the energy bandgap and, EF-Ev >>KT So, for energy levels in the valance band , EF- E >> KT, there is then
EFi is the Fermi-level for the intrinsic semiconductor, i.e., intrinsic Fermi-level
For a given semiconductor, at constant temperature, ni is constant. ni for silicon at T = 300 K is approximately 1.5 X 1010 cm-3.
n0 p0 = n
2 i
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N-Type Doping
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P-Type Doping
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Adding dopant atoms to a semiconductor will change Fermi energy, and thus change the electron and hole distributions
For N-type semiconductor, , EF>EFi, n0> p0 electrons are majority carrier and holes are minority carrier For P-type semiconductor, EF<EFi, n0 < p0 holes are majority carrier and electrons are minority carrier
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Equilibrium
condition
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gD = 2 for Si, GaAs, Ge and most semiconductors For 1017cm-3 P in Si: N+d=0.94 Nd
gA = 4 for Si, GaAs, Ge and most semiconductors. For 1014 cm-3 B in Si: N-a = 0.9998 Na For 1017 cm-3 B in Si: N- a = 0.88 Na
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Complete Ionization
At room temperature, for a typical doping density of 1016 cm-3 , for n-type semiconductor, almost all donor impurity atoms are ionized and have donated an electron to the conduction band, i.e.,
N+d Nd
for p-type semiconductor, each acceptor atom has accepted an electron from the valence band and a hole is created in the valence band for each acceptor atom, i.e., N-a Na
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Charge Neutrality
In thermal equilibrium, the semiconductor crystal is electrically neutral. Electrons and holes are distributed among various energy states, but the net charge density is zero.
+ q[( p0 N a ) + ( Nd n0 )] = 0
+ ( p0 N a ) + ( Nd n0 ) = 0
+ Na N a and N d N
( p0 Na ) + ( Nd n0 ) = 0
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( p0
Nd Na n0 = + 2
Nd Na 2 ( ) + ni2 2
Na Nd p0 = + 2
Na Nd 2 ( ) + ni2 2
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N-type semiconductor
P-type semiconductor
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