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Vishay Semiconductors
formerly General Semiconductor
TO-226AA (TO-92)
0.142 (3.6)
Features
NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suited for AF-driver stages and low power output stages. These types are also available subdivided into three groups -16, -25, and -40, according to their DC current gain. As complementary types, the PNP transistors BC327 and BC328 are recommended. On special request, this transistor is also manufactured in the pin configuration TO-18.
Mechanical Data
Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk 5K per container, 20K/box E7/4K per Ammo mag., 20K/box
Bottom View
Unit V V V mA A mA mW C/W C C
150 65 to +150
Note: (1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
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Electrical Characteristics
Parameter
Symbol
Current gain group
Unit
DC Current Gain
Current gain group
VCE = 1 V, IC = 300 mA VCE = 45 V VCE = 25 V VCE = 45 V, Tamb = 125C VCE = 25 V, Tamb = 125C IC = 10 mA IC = 0.1 mA IE = 0.1 mA IC = 500 mA, IB = 50 mA VCE = 1 V, IC = 300 mA VCE = 5 V, IC = 10 mA f = 50 MHz VCB = 10 V, f = 1 MHz 100 100 10 10 0.7 1.2 nA nA A A V V V V V MHz pF
ICES
Collector-Emitter BreakdownVoltage Collector-Emitter BreakdownVoltage Emitter-Base Breakdown Voltage Collector Saturation Voltage Base-Emitter Voltage Gain-Bandwidth Product Collector-Base Capacitance
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This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.