FZT788B

- (Volts)

1.4
1.2

IC/IB=200
IC/IB=100
IC/IB=10

1.8

Tamb=25C

1.0
0.8

1.4
1.2

0.4

0.01
0.1
1
IC - Collector Current (Amps)

1.0

0.4

0.01
0.1
1
IC - Collector Current (Amps)

VCE(sat) v IC

0.4
0.2

300

- (Volts)

600

0.6

1.4

IC/IB=200

0.01

0.1

10

ICM

-8

Continuous Collector Current

IC

-3

Power Dissipation at Tamb=25C

Ptot

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

IC=-10mA*
IE=-100A

Collector Cut-Off Current

ICBO

-0.1

VCB=-10V

Emitter Cut-Off Current

IEBO

-0.1

VEB=-4V

Collector-Emitter Saturation
Voltage

VCE(sat)

-0.15
-0.25
-0.45
-0.5

V
V
V

IC=-0.5A, IB=-2.5mA*
IC=-1A, IB=-5mA*
IC=-2A, IB=-10mA*
IC=-3A, IB=-50mA*

Base-Emitter
Saturation Voltage

VBE(sat)

-0.9

IC=-1A, IB=-5mA*

Base-Emitter Turn-On Voltage

VBE(on)

IC=-1A, VCE=-2V*

Static Forward Current Transfer

Ratio

hFE

500
400
300
150

Transition Frequency

fT

100

Input Capacitance

Cibo

225

Output Capacitance

Cobo

Switching Times

ton
toff

0.01

0.1

10

DC
1s
100ms
10ms
1ms
100s

10

VCE - Collector Emitter Voltage (V)

Safe Operating Area

3 - 245

Peak Pulse Current

0.01
0.1

VBE(on) v IC

-5

0.4
0.2

IC - Collector Current (Amps)

-5

V(BR)EBO

10

10

VEBO

Emitter-Base Breakdown Voltage

0.4

0.1

Emitter-Base Voltage

0.1

-15

-15

VBE(sat) v IC

0.01

-15

VCEO

Collector-Emitter Breakdown Voltage V(BR)CEO

0.8

0.8

VCBO

1.0

Collector-Base Voltage
Collector-Emitter Voltage

-15

hFE v IC

0.6

UNIT

Collector-Base Breakdown Voltage V(BR)CBO

IC - Collector Current (Amps)

1.2

VALUE

PARAMETER

VCE=2V

SYMBOL

1.0

IC - Collector Current (Amps)

-55C
+25C
+100C

PARAMETER

1.2

0.2

0 0

C
B

ELECTRICAL CHARACTERISTICS (at Tamb = 25C)

0.6

0.8

1.4

- (Volts)

- Typical Gain

1.0

-55C
+25C
+100C
+175C

1.6

1200
900

1.6

VCE=2V

- Normalised Gain
h

1.4
1.2

10

VCE(sat) v IC

+100C
+25C
-55C

1.6

ABSOLUTE MAXIMUM RATINGS.

0.8

0.2
0

10

APPLICATIONS
* Battery powered circuits
COMPLEMENTAY TYPE FZT688B
PARTMARKING DETAIL FZT788B

IC/IB=200

0.6

0.6
0.2
0

-55C
+25C
+100C
+175C

1.6

- (Volts)

1.8

FZT788B

ISSUE 3 - OCTOBER 1995

FEATURES
* Low equivalent on-resistance; RCE(sat) 93m at 3A
* Gain of 300 at IC=2 Amps and Very low saturation voltage

TYPICAL CHARACTERISTICS
1.6

SOT223 PNP SILICON PLANAR MEDIUM

POWER HIGH GAIN TRANSISTOR

100

SYMBOL MIN.

TYP.

MAX. UNIT

-0.75
1500

IC=-100A

IC=-10mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-6A, VCE=-2V*
MHz

IC=-50mA, VCE=-5V
f=50MHz

pF

VEB=-0.5V, f=1MHz

25

pF

VCB=-10V, f=1MHz

35
400

ns
ns

IC=-500mA, IB1=-50mA
IB2=-50mA, VCC=-10V

*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%

Spice parameter data is available upon request for this device
3 - 244

CONDITIONS.

FZT788B

- (Volts)

1.4
1.2

IC/IB=200
IC/IB=100
IC/IB=10

1.8

Tamb=25C

1.0
0.8

1.4
1.2

0.4

0.01
0.1
1
IC - Collector Current (Amps)

1.0

0.4

0.01
0.1
1
IC - Collector Current (Amps)

VCE(sat) v IC

0.4
0.2

300

- (Volts)

600

0.6

1.4

IC/IB=200

0.01

0.1

10

ICM

-8

Continuous Collector Current

IC

-3

Power Dissipation at Tamb=25C

Ptot

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

IC=-10mA*
IE=-100A

Collector Cut-Off Current

ICBO

-0.1

VCB=-10V

Emitter Cut-Off Current

IEBO

-0.1

VEB=-4V

Collector-Emitter Saturation
Voltage

VCE(sat)

-0.15
-0.25
-0.45
-0.5

V
V
V

IC=-0.5A, IB=-2.5mA*
IC=-1A, IB=-5mA*
IC=-2A, IB=-10mA*
IC=-3A, IB=-50mA*

Base-Emitter
Saturation Voltage

VBE(sat)

-0.9

IC=-1A, IB=-5mA*

Base-Emitter Turn-On Voltage

VBE(on)

IC=-1A, VCE=-2V*

Static Forward Current Transfer

Ratio

hFE

500
400
300
150

Transition Frequency

fT

100

Input Capacitance

Cibo

225

Output Capacitance

Cobo

Switching Times

ton
toff

0.01

0.1

10

DC
1s
100ms
10ms
1ms
100s

10

VCE - Collector Emitter Voltage (V)

Safe Operating Area

3 - 245

Peak Pulse Current

0.01
0.1

VBE(on) v IC

-5

0.4
0.2

IC - Collector Current (Amps)

-5

V(BR)EBO

10

10

VEBO

Emitter-Base Breakdown Voltage

0.4

0.1

Emitter-Base Voltage

0.1

-15

-15

VBE(sat) v IC

0.01

-15

VCEO

Collector-Emitter Breakdown Voltage V(BR)CEO

0.8

0.8

VCBO

1.0

Collector-Base Voltage
Collector-Emitter Voltage

-15

hFE v IC

0.6

UNIT

Collector-Base Breakdown Voltage V(BR)CBO

IC - Collector Current (Amps)

1.2

VALUE

PARAMETER

VCE=2V

SYMBOL

1.0

IC - Collector Current (Amps)

-55C
+25C
+100C

PARAMETER

1.2

0.2

0 0

C
B

ELECTRICAL CHARACTERISTICS (at Tamb = 25C)

0.6

0.8

1.4

- (Volts)

- Typical Gain

1.0

-55C
+25C
+100C
+175C

1.6

1200
900

1.6

VCE=2V

- Normalised Gain
h

1.4
1.2

10

VCE(sat) v IC

+100C
+25C
-55C

1.6

ABSOLUTE MAXIMUM RATINGS.

0.8

0.2
0

10

APPLICATIONS
* Battery powered circuits
COMPLEMENTAY TYPE FZT688B
PARTMARKING DETAIL FZT788B

IC/IB=200

0.6

0.6
0.2
0

-55C
+25C
+100C
+175C

1.6

- (Volts)

1.8

FZT788B

ISSUE 3 - OCTOBER 1995

FEATURES
* Low equivalent on-resistance; RCE(sat) 93m at 3A
* Gain of 300 at IC=2 Amps and Very low saturation voltage

TYPICAL CHARACTERISTICS
1.6

SOT223 PNP SILICON PLANAR MEDIUM

POWER HIGH GAIN TRANSISTOR

100

SYMBOL MIN.

TYP.

MAX. UNIT

-0.75
1500

IC=-100A

IC=-10mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-6A, VCE=-2V*
MHz

IC=-50mA, VCE=-5V
f=50MHz

pF

VEB=-0.5V, f=1MHz

25

pF

VCB=-10V, f=1MHz

35
400

ns
ns

IC=-500mA, IB1=-50mA
IB2=-50mA, VCC=-10V

*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%

Spice parameter data is available upon request for this device
3 - 244

CONDITIONS.

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