302

IRE TRANSACTIONS

ON

MICROWAVE

THEORY

AND

TECHNIQUES

September

Broad-Band
R. V. GARVER~,

TEM
MEMBER,

Diode
IRE, AND

Limiting*
J.

A. ROSADO~

SummaryThe bandwidths of two types of limiters operating below diode resonance and one type of limiter operating at diode resonance are calculated. A 2.5-Gc base-band limiter was made providing a low power insertion loss of less than 1 db, a limiting threshold of 10 mw, and a high power isolation of greater than 20 db. A 0.9to 1.3-Gc matched limiter was made having a VSWR of less than 1.2 for all power levels. The burnout power of these two limiters was calculated to be about 10 watts incident CW power or 1500 wattmicrosecond incident pulse energy. Using the diode resonance the calculations indicate that it is possible to make a 5-Gc limiter with 15 per cent bandwidth, less than l-db low power insertion loss, a limiting level of 10 mw, and greater than 20-db isolation at high power. The bandwidths derived for diode limiting are equally applicable to switching. INTRODUCTION ITH w THE

making three uses The utilizes The to the matched third

broad-band appear diodes limiter type, diode to in be shunt using

TEM the most

switches practical. The coupler

that

are The

limiters, first type type is a [15]. 2 Gc,

[1 ] [8 ]. a 3-db is most

second

or circulator above

which

practical

the

self-resonance. used in diode switching a of a switch of incident device. which q is the highest The occurs incident should that range will or be applied limiter to is the 3

definitions The expressed

limiters. ratio

attenuation in decibels past attenuation The at isolation the the

power insertion at the

power is the incident tion ideal

transmitted minimum power. which limiter power constant occurs the in

loss lowest In with attenua-

maximum

power. change

an in-

attenuation such for a way a wide

development applications have been

of

improved types The LF line.

diodes of first

for

creasing remains

the of input

output power.

power

microwave limiters [8] is the

several developed. of the

diode type of radio by the subsubthe

[1]two

HF

application a

technique The

I. Two A.
Diodes Two in Same Plane

DIODES

IN

SHUNT

diodes

shunting above

transmission power [9] the level [11 ] is system

frequency diodes. harmonic harmonic amplitude constant. metric versions input power of diode provides functions minals ing Limiters mixer saturation as levelers tions; quency obscure systems undesirable above the will each The switching
* Received T Ordnance ington, D. C.

a certain type When with

is clipped a pumped into beaks pump

The

second

diodes voltage load

shunting

a transmission across voltage the to the

line at which

(Fig. the

1) will termidiodes of 1. v;

oscillator. oscillation swing The frequency the output and The third

clip nating begin the

the

appearing The is shown

matched characteristic portion at

increasing to

power

according

corresponding type converters. frequency the device type with fourth

the

pump

remains

to conduct. two diodes

voltage-current in the lower

[12 ] [14] With can can

makes two

use of paraconas the at low use that ter-

of Fig. 0.3

frequency same gain

Germanium silicon power diodes limiting which low The istic

diodes

begin gallium

conduction arsenide matched and have limiting

about

be the provide

at 0.7 v; and delivered raises power will cause loss. or to

at about load 20 mw. level. a low and of line of

1.0 v. The would Biasing Below corthe the

frequency levels. high are short can diodes from for

a 50-ohm 10 mw, the diodes

[15 ] of limiter in that diode when a diode current its

makes switch conduction

respondingly

be 2 mw, lowers the level very a

switching passively

techniques isolation circuited. be used from pulse reducing as a limiter

susceptance thus have a

switching

little of

reflection a [16]) diode

insertion

as protective burnout leak-through, undesirable amplifiers in which and with and modulation. limiters of and

devices in reducing or they amplitude in which in pump amplitude

in protectreceiver be used fluctuacan

attenuation shunting

admittance character-

Y( = G+jB) admittance

a transmission

YO is (see

e.g., for parametric affected swept information, in which uses only other eliminate diode uses amplitude broad-band the the limiters oscillators reflectivity

the amplifier power, for freradar cause of and the for for diode of
If

is radically

by variations

variations the (owing limiting shown diode the

a=lOIOg[(%+lY+(+Y 1)
diode to will by the is purely zero-bias is purely whisker with labeled at low of the assuming loss will limitation spreading For two plane, decrease inductance capacitive capacitance Co+ the (Fig. by the in C. and 2). The diode axis. the same inductive at high Lu) in Fig. levels and whisker with power frequency (owing cartridge inducisolation
R.

phase range will

detection variations For some suffice

levels as to

diode

inductance increasing curves power diode zero increase

maximum 2. If the

availability need for range. reported Of the

broad-band

limiters devices

custom-designed here many are based

narrow-frequency

capacitance on tance Lw) frequency imposed

insertion

increasing

techniques.
March Corps,

possible

ways

on maximum resistance identical as is done

is shown placed low fre-

2 lj 1962. Diamond

Ordnance

Fuze

Laboratories,

Wash-

on the in

attenuation

diodes at

parallel

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?962

Garver

and

Rosado:

Broad-Band
istics not B.

lEM

Diode

Limiting
from these two

;
diodes if they

303
are

Cmzo
Fig. lThe schematic diagram line and their combined of two diodes voltage-mlrrent shunting a transmission characteristic.

can located

be obtained in the
Not

same Same two gives

(1 is

plane,
Plane

Diodes

in the [16])

Assuming Fig. 3 (from in and and spacing centers line) shunt At low

diodes the physical wavelength of

are

pure

susceptances, as a function between of diode

attenuation distance in

l/A,,

&

is

the

the

transmission for diodes. of the

as a function or normalized levels the

normalized reactance

susceptance for series

diodes power

capacitive

susceptance as is l/Xg susceptance

l/&,

diodes spacing. high follow duced

is proportional Knowing a straight to zero. By the and line

to frequency normalized by to selecting the will origin choice

for at

a fixed some is re-

frequency,

the

parameters the insertion iits sLls-

as frequency

proper

of spacing the

loss at lower value at the

frequencies high frequency. diode diodes insertion apart

be equal Taking

to or less than normalized

ceptance and the taking

of each the

to be 1.2 at the to be in the loss at line will the to

highest plane If

frequency (l/AO = O), they are the loss in 41.7 diode

same be

maximum

4 db. The line

spaced maximum will Fig. ohms.

l/hU = 0.2 insertion the of 4

highest the to origin

frequency, insertion as shown the normalized of the which

loss will TE.M

be 0.5 db.

follow

straight 1.2 shows give this upper

3. In 50-ohm Fig.

transmission the frequency

susceptance capacitances capacitance, um

FREQUENCY-MEGACYCLES

corresponds reactance. frequency

a reactance at Knowing

various

the

as a function directly have a

of maximfrom Fig-.

insertion For example, of

loss can if 1.0 two

be determined diodes can each

4.

zero-bias the be was capacithat the the in

Fig.

2.Attenuation band?vidth of a diode shunting a 50-ohm. transmission line as a function of diode inductance, and capacitance, and the limit on maximum attenuation imposed by spreading resistance.

capacitance mounting made by made that spacing by

pf and

be mounted a limiter 3. An was insertion Fig. It zero

so that could

contributes has a 4-Gc them using a cliode

no capacitance, base-band to coax. diode up Thus mount with according

loss of 1.0 db attempt

to make

mounting found causes coax

cfuencies, twice the spreading

Lm = 2 nh,

the

figure

describes and are and half used.

R.=

their the Two

characteristics inductance varactors give greater Mc. with than This

if and

tance

rectangular of the protruding 1 pf.

capacitance resistance C,= 1 pf,

dielectric mounting metal both

constant capacitance diode end is about

ceramic in the can

as much which becomes l.O-db An quadrant in-

in air rectangular

as does

4 Q will
from zero

strip-line, l-pf give are diode

20-db curve that ductor quency quency By center creased

high also can

power describes

protection the

to 400

cases the

maximum these the with same in

possible diodes. cliodes loss with may the in the be

bandwidth When an in infrefrethe inuntake inthe center

2 pf and insertion At bola of and lation and tion high with 4.5 onl~the ductance of Fig.

base-band levels

limiter the

less than inductive. will give second if properly

be obtainecl in parallel of the and low

using power the

loss only power shunting changing 3. Two each curves

up to about a transnlission frequency having 20-db give fairly improves similar

2.5 Gc. line in isolation same to the a hyper-

is put

diodes

insertion series

increases diodes similarly remain~

retains capacitors of

bandwidth

megacycles.

placing

diodes will are

a normalized

susceptance spaced isol/&, inserstripif the rein the in and spreading lines.

frequency in It the

the

isolation while at higher at powers. with

should

frequency, is necessary the effective diode

bandwidth

13 cfb if placed isolation

in the

plane.

The high

changed. into crease effective For

frequencies which powers high

=

to will and
R,= power

insensitive with to that to use(i

changes

account

self-resonance,

decreasing to obtain curves diodes ancl

frequency. are derived.

inductance at low varactors

In a calculation loss curves in the without have then useful the future low If line

capacitance pill-type the The

of Fig. it

4, the isolation mounting inductance limiters of TElli can

L,, give

0.7 nh,
a high

4 Cl,
iso-

is possible whisker

mount

C,=
lation

Cc= 1
of 1.1

pf,

limiter

additional base-bancl range

capacitance be made

22 db, Gc.

this

maximum low power 1.1 Gc.

decreasing insertion Much loss better

to

20 db should character-

at in-

cliodes sistance, over

about crease

to operate

to about

1.5 db at

transmission

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304

IRE 7RANSAC9IONS

ON

MICROWAVE

THEORY

AND

TECHNIQUES

September

ica5bzo
Z.
B/Ya or XIZO

Fig.

3.\ttenuation from two diodes as frequency is varied. At low power levels two shunt diodes follow a first quadrant straight line to the origin. At high power levels two shunt diodes follow a second quadrant hyperbola.

lz~l
I I

I
1

Fig.

5Equi>-alent circuits and equations for calculation of attenuation of two diodes shunting a transmission line in which diode losses are taken into account, ] e/&] <~,

02

I
200

\\
1 500
UPPER

1
IK FREQUENCY-MC

1
2K

5K

is

the

impedance etc. 6 shows from two the

of

everything

to

the

right

of

the

Fig.

4Insertion loss and isolation of a baseband limiter using two diodes at optimum spacing as a function of upper frequency and diode capacitance and inductance respectively. 2,= 50 Q.

plane, Fig. from data

calculated various [18]. values varactors Several

curves

for

insertion crosses

loss are

O to 3 Gc for coax

of Cn. The (MA4254, points Gc In should raises having fact for

pill-type of R. in the

CO= 1 pf) be noted. insertion effect O pf of in the the Cm=

in rectangular
C. Precise Calculations to Determine

Mount

Capacitance

The
L.

inclusion in the in 6 the also would follow Cm= in

calculation of 2.5

The and taken occur account greatest and same losses at low tion mount tance). current. the tion sketched
R,;

diodes thus

available the diode At one fifth

today,

however, and diode has taking most 3 but easily now circuit inductance it equivalent to resonant

have losses be the be circuit

large must

loss filling Fig. Note diode

neighborhood the that up valley in has less 3 Gc.

resonance zero 10 Gc bias, and

be will into for as the

Fig, almost than Since

3.

into

account. 2 and

resonance taken frequency made

valley give to the 1 pf

completely l-db the curves this loss diodes insertion data type was to could

disappeared. suppressed loss to points of diode calculated determine be made 7. Based this all

between at about

if Cm could

be sufficiently

of the can upper

accuracy. into in that of the power Fig.

Calculations account 5. The for The

resonance is the diode and

frequencies mately 0.9 pf, For various high these these with loss using plate electric

approxiabout mount. for how with on coax insertion limiter tridiof an

losses as

theoretical to be 1 pf for the a insertion the l-db between results

as if Cm were

Cm is taken spacings frequency These diodes. curves

used diodes. consists

Fig.

includes of the

equivalent Cd, spreading

of a whisker

LW, depleR,,

limiter

layer

capacitance

resistance cartridge for of then bottom

are shown made which Fig. in made diode in

in Fig.

capacitance At high To power facilitate

Cm (which levels the of

includes cd is shunted

capaci-

a limiter spacing by the diodes The inch.

was crosses was Each

rectangular gave the 7. Another dielectric by the consisted

by conduction attenuation, line give 1 is used the equa5. Z,

a diode shown the

of 0.9 inch

calculation the at length the

m equivalent for attenuation

circuit

same

in teflon reduced mount

[17 ]. Voltage-current

considerations shown

strip-line. to 0.54

spacing

was

of Fig.

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7962

Garver

and

Rosacio:

Broad-Band

TEM Diode

limiting

305

1
.1

I
SPACING: 0,60

w ~
100 mw

1
Imw I 10mw

f =1050Mc / BASEBAND LIMITER

Po 10mw C=l. oof

LIMITER 1 mw I 100mw Pi I lW 1 10 w 10 w

Fig. S&Output power as a function of input power for the base-band limiter (Fig. 7), and matched limiter (Fig. 12). The pulse length was 0.1 psec.

highero
Fig.

than

the

theoretical injection

curves. which gives is based

Biasing a forward on

causes re-

.. . .

. .. .
1

. . . .
FREQUENCY

. . . .
2 Gc

. . . .

. . . . {
3

minority sistance carrier

carrier lower current 8 shows varactors. pulse at

than only. the

Rs

which

majority

6Calculated insertion loss as a function of frequency and mount capacitance for two diodes suaced 0.6 inch aDart assuming LW=O.6 ;h, Cd= 1 pf, R,=4 Q, a;d ZO=50 {1. Tie data point; are from a limiter made in rectangular coax.

Fig. pill-type

limiting The 1.05

characteristics were

of

the

two using was

measurements Gc. output No and pulse 5-w

made

a 0.1 psec observed. was 18 mw line.

leak-through input limited 50-ohm may or gallium the

Between using Other the silicon limiting diodes,

50-mw diodes power ZO. using

output to about

o 0 r
30-

~ 1 db. The

is always shunting levels

0 c1

10 mw sion

transmisby arsenide

be obtained

biasing diodes,

germanium

or by changing
Rating

co 02 u o I 20: z. 0. c. a A. 0 ~ u -2 ~ : ~ I : . J

/5,

/-------

,,

D.

Power

Using limiter mations expected

SPACING 0,6

[2] of

the

power 8 were the The

ratings calculated. problem the mesa

of the

diodes

used of

in f:he

Fig.

Because solvable) the to

approxiare of ithe a semimesa of the in which

(to only

make

results

to indicate h and The the is the by

order a,

of magnitude sitting on

burnout cylinder infinite cylinder K(O.837 silicon.

power. of silicon

is considered radius thermal thermal

be a silicon of the

height region.

resistance
R~ = h/Tra2K,

lo- -1 ~ +

is given w/cm-C) The

equation

conductivity is given considered mesa in out at

thermal
= l/4aK.

spreading The

resistance heat top is

by the to and [2] be disindiA freto about

equation generated

R,T

in the only the into interpreted

junction the with zero

at the these bias has This

of the The

o o
Fig.
1 FREQUENCY Gc 2

sipated results cate

function of fre1 pf, Cm= 1 pf, limiter made in diodes.

semiconductor. junction is burned where

experimental 650C. of cutoff radius

assumptions a capacitance ~. is the allows average [16]

P,

that

silicon at

7Calculated insertion loss and isolation as a quency and spacing assuming Lo =0.6 nh, Cd= R. =4 Q, and ZO = 50 Q.. The data points are for a rectangular coax with 0.9 inch spacing between

silicon quency

diode of the

(~,/ 130 +0.53)X be calculated

105 pf/cm2 diode when in can Gc. f. ancl

mesa incident

C, are known. power 1). diodes caused

8-32 screw was was lated taken ity

screw then not less than high and by and

hole secured

tapped the all behaved isolation

to pill

the

center The rectangular limiter in Fig.

strip.

An coax

8-32 loss but calcuvariwere polarare it ~,

A diode

in shunt

control

varactor.

insertion

determined power

by the equation dissipated that 30-db

(see

=~d(ZO/4R,+ With the two is at worst

as well power

as for

~d is the by to ~=

by the total Fig. at Then

diode. 7 shows

1 db for

frequencies of the lines mounted conduction.

up to 2.5 Gc. was also 7 for the data in the All points same points

it is assumed conductive giving by 13.3E. limiter firmed

the

isolation

The

mismatch. isolation 2). Fig.

base-band corresponds This is conindicate

is shown The having biasing

as dashed high the them power into diodes

1 Gc which ~= 13.5~~. which

ous spacings.

isolation

Re E 1 Q

VSWR

measurements

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306

IRE TRANSACTIONS

ON MICRO WAVE

THEORY

AND

TECHNIQUES

September

IN \ \ . _ /

BROAD

BAND 90

-\
~
P;LSE LE~GTH-# SEC

I
1000
Fig.

?)db
COUPLER

10Schematic diagram for matched two diodes in a 3-db coupler.

limiter

using

Fig. 9Estimated matched limiter

burnout power of limiter in Fig. 7 and the special (See Section I I ) as a function of pulse length.

The

attenuation is shown at higher and the high

as a function in Fig. 11 for

of frequency

and

diode these

parameters curves to operate inductors advantages. Second,

ZO = 50 Q. Again the diodes tuning for all with power limiter matched coupler limiter diodes; for for pulse CW pill mount. wire

describe

the bandwidth frequencies capacitors. it power is series First,

when by

are made parallel has load ancl two can levels.

To that that
R~ =

calculate the h= first

the of the

limiter two

burnout diodes gets power, and total end

power most
PBO,

it is assumed of the 100 Gc. power. Then is it is assumed resistance diode (25C). (0.75 w) is taken Thus, (13.3)

This to the 3-db that this

To calculate

the diode cm, 198,

burnout CO= 1 pf, the

matched passed

0.0038
R.=

~c=

635,
T.,

and

thermal of the

be recombined mitted It made their as with was with response output limiter but was was now was loss For was the

again TR

in another tubes. thought

transbe

833 C/u7. to be

The the

semiconductor equipment

temperature w and ~=

originally inexpensive time not made

could however,

PBO=

(650
[2] the

2e)/833 =0.75

gold-bonded too slow

= 10 w. In For For the approximate above diode in 1.3 ,usec and of duration is dissipated, generated l\IATCHED second type and thermal 10 per cent 90 per cent less than hence the the curve rise time of final is reached is calculated. temperature that is in 35 psec.

was flat

limiting limiting. varactors An of

and Thus as

the the

enough using the

same

reached no heat by heat II. The makes used the power power diodes reflected output the little function the at

above mandrel insertion used.

in a strip-line used to to tune

series the

inductor minimum was 3-db conisoof the

pulses

1 ~sec it is assumed burnout of Fig. 3-DB limiter

consisting

of 10 turns

of 0.004-inch .% 1- to in 3-db

on a 0.016-inch 3-db coupler perfect could allows

is determined 9 can be drawn.

frequency 2-Gc Fig. coupler loss

1.1 Gc. calculations The

11

LIMITER of TEM

USING diode 3-db in arm. power,

COLTPLER reported the The half phases come power and

is given

coupler here tribute lation the limiting VSWR power The can
Pi=

assumed.

used but

as much greater

as 0.5-db 30 db. of the in Fig. was

insertion The 8. less power

use of a broad-band X band. by the In is the each add strip-line shown 3-db diode in

90 coupler, the equivalent 10. so that low and power the high reflection The Fig. At

same incident of

as of the the the

than loss plotted limiter

frequency is shown From than 0.9

dependence in Fig. to 1.3 all series GC

circuit

insertion is levels. average withstand pd(ZO/R. with of done the of the

limiter

12. The incident diode [16] be as rewas diode drop thermal of the adds metal

configuration is split goes reflect waves arm into

coupler

1.2 for a

levels out

incident in

of the levels into thus as a b>,

incident is + 1). the

which by series end the

such Fig. and very

a way 10. At the little arm.

as to

determined Since necessary the semiconductor series

equation cannot thermal This of the

as shown are conductive loads out the diode with

diode touching the mount. end

the diodes matched power relation

power

is conveyed attenuation

mounted in Section sistance easily with and

I it was the by

to measure diode the the the The thermal hot)) diode diode

output

strip-line forward-biasing

of the

impedance

Z = R+jX

in the

mount,

a thermocouple metal by the of the Associates diode thermal dc

between ground power mount. mount plane. into The

temperature is the resistance This

a=

lo log

r(:+2)+(3
1

divided resistance Sanders to the making

MX24

is 71 C/W. of 833 to give

resistance

904C/w

650

T.
=

010[(%+1)+(32

Plw

0.7 w.

904

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J962
50 -.5

Garver

and

Rosado:

Broad-Band

TEM Diode
2

Limiting

307

* 40In . . m :,0 . I : 1-20. z . + + u 10-5: R, -In

m: ii m z. u a. 1. m. :1 -1 z: 0 K m w. UJ z -. . 0 < x--x+ 2 ., / /

0 50 100 200 FREQUENCY MEG&C fCLES

,8

.9

1 1.0

1.1

1.2 GC

1.3

1.4

FREQUENCY

Fig.

1lBandwidth of attenuation for diodes mounted in a 3-db coupler as functions of diode inductance and capacitance and the maximum attenuation as a function of spreading resistance. ZO=50 Q.

Fig.

12Low power insertion loss of a matched limiter, using tuned pill-type varactor in each arm of a 3-db coupler.

bias Since
R,= 4 Q

these must

techniques above be operated of power the

are

useful it

up

to bias

about

2 Gc. that

To the the

make diodes

limiters

2 Gc,

is necessary

1) the

at a reverse resonance puts

to increase changes in the

then However, only

P,

(0.7

w)(13.5) power limiter the the

9.5 w. to time twice 9. the mesa doubled, the limiter about constants this power the

frequency limiting

diode and

(this bends at

level with

output

half power. same

of the thus as this for Since

incicfent thermal base-band about in Fig. by

curve), may

2) diodes be built, [16] for are with or diode

resonance must that have 13. At

a higher

frequency which make

goes to each 20 w average are about can for For

diode; the

can withstand limiter,

3) limiters resonance. be seen 2 will The Fig. causing by with with in

be made a series the low

use of the From in polarity mode resonates power, switching

it can mode limiting. Lu

diode proper circuits power, loss.

operating switching of At this high Lw Cd series

limiter shown More size.

therefore baseband could if the

handle limiter be handled mesa

the

equivalent a low insertion

power example

increasing were

shown

radius

co=4pf

Cd is shunted resonate in incident

R,

conducti~n CC. This the

current makes the

allowing diode

to parallel

a high thus it

R., =lQ
forjc R>[ R.~ Including resistance = = 159C/w
99C/w

100 Gc.

impedance reflects the

series

center

conductor;

power. to be negligible, loss and [16]. highest As the than and etc, C. must frequency reactance IOOX,.,, greater where equal to is Cd for occur varied of the over than X,,, is a isolation

Considering lowest the resistance, the total thermal at same or below

insertion frequency

mount is 329.

thermal

above

parallel will y cent

resonance, be greater bandwidth, bandwidth,

6.50 T,
pBc, = -

resonant
=

structure cent over frequent a 10 per

329

1.9 w
= 97 W.

per

10X,ex the incident by the for in The loss according to

P; Thus power. larger the Fig. the limiter The mesa 10 per [~] cent

(1.9 w)(51) withstand

reactance The center mean of over over

cd)

of Lm or cd at resonance. frequency of the by the a of the rather resonance than structure etc. at the is the geo-

could to and

200 w average are points. this increased 47 psec

metric mean reactance X,~./ X,.,/10 of C.( = frequency sertion creasing er

extremes the

arithmetic The than than the ininis less

thermal

time 2 ~sec 90 per for the

constants and cent of special

as implied

use of per cent resonant cent bandwidth, resonance which more without is loss over-all in

bandwidth.

respectively The anticipated is shown limiter.

series 1 per

100

bandwidth

and The v~

less times the with

power-handling 9 as the zero-bias be less to Fig. III. The thus the far diode

capability curve

limiter matched the

a 10 per cent causes a parallel series

presence

capacitance than 11. LIMITERS two can 1 db over

of 4 pf allows a 200-Mc

insertion

of the loss to

resonance a little it would

causes rapidly Cc. But

bandwidth

increase than the of

frequency presence of away parallel the from

at lowthe as it

frequencies the

insertion Cc. The linear down as the

slightly effect

decreased about shifts

USIPJG THE limiting at With

DIODB

RESONANCIZ described that at of zero

by

is to shift mean

broad-band be applied resonance.

techniques below varactors

skirts much up for

resonance resonance.

frequency the attenuation

frequencies present

geometric

Using

equa-

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308

IRE TRANSACTIONS

ON

MICROWAVE

THEORY

AND

TECHNIQUES

September

MODE 2 50-

*o-

d m : g306 ~ ,0 ~

LOW

POWER ~c

,o-

Z.
Fig.

0, 000,

00,

002

00; 0,

02 05: INSERTION LOSSDECIBELS

i;

,,

,0

l&Minimum isolation and maximum insertion loss of a limiter using a resonant diode in series with the center conductor as a function of bandwidth and X.., (reactance of Lu at resonance). These curves also describe the characteristics of a limiter made using resonant diodes in shunt in a 3-db cou~ler if ZO is replaced by 2,/4.

HIGH Fig.

POWER

13Equivalent circuit of a resonant diode in series with a transmission line. At low power levels the series resonance between LW and Cd causes the diode to be a low impedance thus having a low attenuation. At high power levels Cd is shunted by conduction current allowing LW to parallel resonate with C,. The resulting high diode impedance causes a high attenuation.

tion

for

a diode

in series

[16],

a=100[(1+3+ (31
the tions X.,,
L.

isolation

and

insertion and

loss

are and 5 nh

calculated plotted for large in

as funcFig. standard cartridge on the this resoloss is will isolation. the are this
Bandwidth 5 Gc 4.885.13 Gc 4.755 .25 Gc 4.635.38 Gc
4.5 .5..5 Gc

of X,,L/ZO is determined discrete diodes, and

bandwidth by Lu and of about nh for

14.
o I . ..
IN SE;TION

the frequency.

Typically,
Fig.

...,.
LOSS DEClk LS

.
I

01

has

values 2 for

cartridge diodes, The insertion nant will .\t Using maximum plotted For limiting a limiter having and bias, 29 db is seen width 20_db will to frequency f. Referring that the 20-db the

short will place

standard limitations using the since

0.7 nh

pill-type

diodes.

spreading loss and

resistance isolation series

of a limiter resonance, by the limit R./ZO, diode the

15 hlaximum isolation and minimum insertion loss of a resonant diode in series with the center conductor as a function of x,.., center frequency, j, and diode cutoff frequency, ~,= ( 27r R, Cd)l. These curves also describe the characteristics of a limiter made using resonant diodes in shunt in a 3-db coupler if 20 is replaced by ZO/4.

structure. be limited parallel the

At

insertion X/ZO

directly resonance which will cutoff and of the with possible The

zero. be mately of the as their limiter are squares. The calculated characteristics as follows:

impedance maximum insertion f/fc in Fig. possibilities available l-db today reverse f/f. From limit insertion have bias. about

R. +X2,,,/R.

diode isolation

frequency minimum and the

f. = (27r12,C~)- loss 15. of

Insertion 0.8 0.8 0.8 0.8

1.1

LossIsolation clb29 clb29 clb24 clb20 cIb18 db db db db db

as functions purpose at 5 Gc best f.= to

of X,.,/Z, showing problem

technique,

is considered

of lmaking diodes, loss, cutoff At 0.8 Fig. the zero 0.06. db to 14 it band-

commercially bandwidth, best 80 Gc is possible X,,,/Zo component diodes making = 3.5. will

5 per cent 10 per cent 15 per cent 20 per cent

isolation.

A diode quire 5-Gc is built X,,, X,.,/ZO is

with

Lw =

2 nh

used

for this

this

limiter the

will

re-

200 Gc at maximum
Fig. the 15 it

a zero-bias resonance. around 63 ohms, = 3.5

capacitance To the accomplish diode ZO has

of 0.5 pf for C.= 220 a

necessary sleeve Since the transbandnarrow the fulfill [16].

is approximately for f/fG to about isolation. that but = 0.06 when

a capacitive 0.5 pf ohms of to TEM sufficient For

to go from

to make to be In

reactive

requirement. system,

50-ohm

15 per cent with 0.2-db insertion loss and Actual calculation of the insertion loss the are 0.8 db and only about the 0.8 0.2 db do not db, adding add approxiup

mission-line width long have and of

transformers side of the

to be on each the the transformers mean

diode. In this

show 1.0 db

bandwidth

are one-quarter

wavelength example

impedance.

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1962
diode (3-cm) is mounted 105-ohm line in the section. stubs diode. to to

Garver
center It act of

and

Rosado:

Broad-Band

TEM Diode
in Figs.

Limifing
2 and 4 for shunt diodes, Fig. and

309
11 for Fig. 14

a half-wavelength necessary ground to use

portrayed series for diodes

is also as dc

in a 3-db diode in are low

coupler series. used in

or circulator,

quarter-wavelength on each The frequency. of cd with output power identical arm side limiting Away power resonant of the

returns

a resonant When

varactors small. The voltage

limiters, across the

response limiters diode In to delay conduction allowing no which but time Thus

times allows junction

is expected from

be

flattest

at

the

center

are the with most rier with

very

Q of broad-band time {or long buildup. is due time

resonance cause make are To

the slight

reactance variations

variation in the two in each limiter,

incident negligible of the current it. Thus

to appear conduction has diode no can is

slhould cliodes

delay iorward which the the the

varactors carassociated imeclispike will the the j uncwhich recombine. form time. can of an At be

curve.

a matched mounted

majority

in shunt

of a 3-db attenuation

coupler. of a shunting reflection diode from the in a 3-cfb diodes. coupler

go into

The

ately leakage there

when past will little

power limiter.

increased For high carrier

is a function

of the

forward current

conduction

be some effect voltage minority have this

minority forward

=010[(2:+)+ (231
Figs. x=., quires greatly 14 and = 5 z, to 15 apply for x,., 20. for The The this configuration then above if range example would 20/4 from renot is substituted curves 20. results. in impedance diodes. could be resistance, capacitance sleeve. loss curves and apart of and Two a low Fig. Two mounted level or is allowed more in the by glasssame inductand if they can good in will a or The = 0.125

have forward

on the is higher will carriers

resistance, it will take

when for the

removed than in time cause

injected tion will will return

to recombine. normal as the a dead

conductivity carriers in the with carriers saturation not vs dead time

to normal decreasing level thus which be linear low times no there the possible

ZO = 55 ohms, alter the

use of ZO = 50 ohms

In a limiter attenuation some power

expected

exponentially more will dead to high minority be time in 10 nsec some will decibels are

Additional using sleeve, ance, have additive every fabricating a very be placed multiple adding and

flexibility identical varactors spreading

generated; level It plotting time. The but diodes Diode all power With power recovery above should

power time varactors, in Pig. 9 by

encapsrdated

be increased. logarithmic

(whisker7> in parallel, isolation, diodes,

characterize cutoff

depletion one low one-half isolation. Their add. used

layer insertion wavelength The

attenuation voltage less than ratings

capacitive

frequency common. are estimated

to have 3 are insertion is mode

very cyclic losses

of the diodes

should with

be

established power made with

experimentally up to burnout. couplers are

by

testing at the here

O. 51/&.

isolations This in any

increasing

approximately pair limiter. of diodes

relationship resonant

useful

with

limiters levels of the high the the

in 3-db the The

matched by

as a switch

reflections other

determined limiters discussed

quality reflect IV.

SUMMARY by level, the insertion times, following loss, qualities: dynamic

coupler.

powers. varactor lowest harmonic power the diodes power are operated limiting, are it generated. however, and not troublesome considered. power that not the from aside its be diode and power with is quite They since they converted a dc short possible will most by can not of the be

Since to that rethe give

.Limiters limited range,

are output bandwidth,

characterized power

significant incident If

harmonics

response

power phase power

ratings, distortion, for

be efficient diodes.

generators, is reflected are not pass filter. has been

flections, noise, An range The causes creasing Low An ing which diodes ideal

generation temperature limiter

of effects,

harmonics, and reliability. output limiting diodes

harmonics

has constant above the of to instead the or is begin

a wide level. limiters with in-

removed Phase The absorbed noise coupled contribute addition in

by a low distortion poor in the to the very to the coupling the

of input spreading the values inductive cause the threshold of the power instead than

power

threshold in diode

resistance power power R. give diode variations level

between diode is an

incident indication will thus system ratio low power slightly Heating

output input of

increase of greatest power

gradually remaining degree between output. by the in of the which the of

Johnson closely should that insertion the zeroin a

constant. flatness. multiple The voltage they limitat are The using with is a is no

spreading transmission little

resistance line; to the noise

interaction in the determined conduction, line

from

signal-to-noise is heated will in insertion will are reduce power used the at

loss. As bias slight isolation as detailed If the they (solid should state the diode levels

diodes the

characteristic

impedance used, and

transmission dc can circuitry

capacitance increase state diodes

increase loss. its burnout well high

resulting the diode

external level

limiter.

in the

threshold dc open greater the The

be increased The range isolation described. is the theme

10 db by of limiting which, of this

power-handling equation. their below

capabilit}burnout typically power called

of a short. maximum has been (which

in the

the loss,

along

insertion

provide reliability.

reliability

bandwidth

paper)

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310

IRE TRANSACTIONS
CONCLUSION

ON

MICROWAVE

THEORY

AND

TECHNIQUES

September

The TEM switching Using base-band (whisker layer and odes

purpose diode

of limiters

this

paper can be

is to

show

how using

broad-band TEM diode

[2]

made

techniques. todays limiter. inductance) of 0.25 of diodes, If it is possible to make a 2.5-Gc can have [3]

tomorrows of pf, 0.2 nh,

diodes zero-bias frequency then limiter were 4-. The if the two

depletion of of which multiplied power mesa 400 these Gc, di[4]

capacitance mount can

cutoff pf,

capacitance give by spacing need a 1O-GC Fig.

0.25

base-band abscissa by

would by rating height [6] [5]

be described 4 and of the the

7 if the were not

divided be

limiter

decreased

is reduced. Very using limiter and power. band good diodes broad-band in a 3-db which CW, matched coupler. will or limiters Calculations provide 1 psec it by 200-Mc pulses was up to can be made a

indicate bandwidth 4-kw peak broaddiode

[7]

is feasible handle At limiters 200-w higher can

frequencies be made

shown

that the

[8]

controlling

resonance. The diode be details switches of this analysis as limiters. are In of useful that [16]. in designing it can [9]

as well to

respect

considered

be an extension two diodes and switch

In the

fact,

Fig.

[10]

indicates limiter good

that are

if the

used spaced

for

base-band a very
[11]

reverse-biased base-band

properly,

proved Crystal Rectifiers, Signal Corps Contract DA 36-039-sc73224, pp. 3233; January 15, 1958. (Also in PROC. IRE, vol. 46, pp. 1099-1115; June, 1958. ) E. Bakanoski, Some Thermal Considerations in the Design of Graded Tunction Silicon Varactor Diodes of the Mesa TvDe. Bell Tel~phone Labs., 9th Interim Rept. on Microwave ~ol~d State Devices, Signal Corps Contract DA 36-039-sc-73224, pp. 1125; May 15, 1959. N. G. Cranna, Diffused Silicon PIN Diodes as Protective Limi\ers in Microwave Circuits,: Bell Telephone Labs., 10th Interim Rept. on Microwave Sohd State Devices, Signal Corps Contract DA 36-039-sc-73224; August 15, 1959. D. Leenov, N. G. Cranna~ and J. H. Forster, Interim Tests on Silico,n PIN Limiter Diodes, Bell Telephone Labs., 13th Interim Rept. on Microwave Solid State Devices, Signal Corps Contract DA 36-039-sc-73224; May 15, 1960. J. B. Singleton, Properties of Hermetically Sealed Microwave Tunction Diodes. Bell Teleuhone Labs.. 13th Interim Rect. on Microwave Solid State Dev~ces, Signal Corps Contract DA 36039-sc-73224, pp. 17-19; May 15, 1960. D. Leenov, Calculations of Lo\\.-Level Performance for PIN Protective Limiter Diodes, Bell Telephone Labs., 2nd Interim ReDt. on Microwave Solid State Devices. Simal Coros Contract. DA 36-039-sc-85325; November 30, 1960. A D. Leenov, PIN Protective Limiter DiodesExperimental Results, Bell Telephone Labs., 2nd Interim Rept. on Microwave Solid State Devices, Signal Corps Contract DA 36-039-sc85325; November 30, 1960. D. Leenov. T. H. Forster. and N. G. Cranna, PIN diodes for protective l~miter applications, 1961 Internat1 Solid State Digest of Technical Papers, pp. 84-85; Circuits Conference, February, 1961. A. E. Siegman, Phase-distortionless limiting by a parametric method, PROC. IRE ( Correspondence), vol. 47, pp. 447448; March, 1959. A. E. Siegman and I. T. Ho, Passive phase-distortionless parametric limiters. 1961 ATatL Svmb. on Microwave Theorv . and Techniques, D&est, pp. 17-18. L A. A. Wolf and J. E. Pippin, A passive parametric limiter, 1960 Internat1 Solid State Circuits Conf., Digest of Papers,

4-Gc

can

be made
[12]

pp. 90-91; February,

F. A. Olson

1960.
Wade.

(cm+ co =
It either minals while can tion is noted are short expanders perform index, and that every as a limiter

1.4 pf).
switch when find will its wide which amplitude fall time, function ter[14] [13]

diode Limiters

or an expander circuited. do not. Some

biasing application

functions the rise with

expanders modulapulselimiter duplexer

[17] [16] [15]

include decreasing (when

increasing pulse combined performing

and

forming, and with

a reflective

pp. 587588; April, 1959. R. V. Garver and D. Y. Tseng, X-band diode limiting, IRE TRANS. ON MICROWAVE THEORY AND TECHNIQUES (Corre1961. spondence), vol. MTT-9, p. 202; March,
R. V. Garver, Theorv of TEM diode switching. IRE TRANS. ON MICROWAVE THE6RY AND TECHNIQUES, v~l. MTT-9, pp. 224238; May, 1961. C. G. Montgomery, R. H. Dicke, and E. M. Purcell, Principles of Microwave Circuits, M. I.T. Rad. Lab. Series, McGrawHill Book Co., Inc., New York, N. Y., vol. 8, p. 77; 1947. R. V. Garver, Z, of rectangular coax, IRE TRANS. ON MICROWAVE THEORY AND TECHNIQUES (Correspondence), vol. MTT-9, pp. 262263; May, 1961.

A cavitv-tvne parametric circuit as ON MICROWAVE a phase-dlstortlonless limiter, ~~ I RE ~RAhs. THEORY AND TECHNIQUES, vol. MTT-9, pp. 153-157; March, 1961. . ... A. D. Sutherland and D. E. Countiss, Parametric phase distortionless L-band limiter, PROC. IRE ( Co~respondence), vol. .-?39; May, 1960. 48, pp. 9585 F. A. Olson, C. P. Wand, and G. Wade, Parametric devices tested for Dhase distortion less limiting. -. PROC. IRE. vol. 47.

and

. G.

a T junction) very low loss.

as a broad-band

REFERENCES (1] A. Uhlir~ Jr., (~semiconduct~~ Diodes

munications, Bell Telephone Labs.,

in High-Frequency 4th Interim Rept.

Comon Im-

[18]

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