RUTGERS UNIVERSITY The State University of New Jersey School of Engineering Department of Electrical and Computer Engineering

14:332:361 ELECTRONIC DEVICES (Fall 2013)

This course introduces the basic structures, physical operations, and circuit applications of major semiconductor devices. It provides students a base for further studying analog and digital electronics, develops the ability to analyze and design circuits. The course is supplemented with computer-aided design projects using PSPICE and with experiments (ECE 363: Electronics Lab). INSTRUCTOR: Prof. Y. Lu, Room 236, EE Building, Phone: (732) 445-3466 EMAIL: ylu@rci.rutgers.edu CLASS TIME/ROOM: W 10:20 -11:40 AM; F 3:20-4:40 PM, Hill-114 TEXT BOOK: A.S. Sedra and K.C. Smith, "Microelectronic Circuits" (6 th Ed.) Oxford University Press, 2010. SUPPLEMENTAL MATERIALS: (1) Electronics Devices Lab Manual Y. Lu 2010 (2) SPICE Simulation Manual Y. Lu 2010 (3) CD-ROM, "Microelectronics Circuits" (6th Ed.) PREREQUISITES: EE 221, 222 CLASS WEB SITE: http://sakai.rutgers.edu TOPICS: Chapter 1 Introduction (2 Lectures) Analog and digital signals, amplifiers, circuit models for amplifiers, network theorems. Chapter 2 Operational Amplifiers (Op Amp) (2 Lectures) Ideal Op Amp, inverting and noninverting configurations, examples of Op Amp circuits, nonideal performance. Chapter 3 Diodes (5 Lectures) Ideal diode, terminal characteristics, physical operation, analysis of diode circuits, small-signal model, operation in the reverse breakdown region, Zener diodes, diode applications, diode circuit simulation and design. EXAM 1 (W2, October 9)

Chapter 4 Bipolar Junction Transistors (BJTs) (8 Lectures) Device structure and physical operation, npn and pnp transistors, DC analysis of BJT circuits, BJT as an amplifier, small-signal operation and equivalent circuit models, biasing in BJT amplifier circuits, basic single stage amplifier configurations, BJT as a switch-cutoff and saturation. BJT circuit applications, BJT circuit simulation and design. EXAM 2 (W2, November 13)

Chapter 5 MOS Field-Effect Transistors (MOSFETs) (8 Lectures) Device structure and physical operation, current-voltage characteristics, MOSFET circuits at DC, small-signal operation and models, basic configurations of single-stage MOSFET amplifiers, biasing circuits, MOSFET circuit design.. FINAL EXAM GRADING OFFICE HOURS 4:007:00 pm, December 19 Two Quizzes: 5% each; Exam 1: 20%; Exam 2: 25%; Final Exam: 45% Wednesday: 1:30--2:50 pm; Friday: 1:00--2:20 pm