Preliminary Datasheet

RJP30H1DPP-M0
Silicon N Channel IGBT High speed power switching
Features
Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Isolated package TO-220FL R07DS0466EJ0200 Rev.2.00 Jun 15, 2011

Outline
RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL)
C

1. Gate 2. Collector 3. Emitter

2 3

Absolute Maximum Ratings

(Ta = 25C)
Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Tc = 25C Symbol VCES VGES IC ic(peak) Note1 PC Note2 j-c Tj Tstg Ratings 360 30 30 200 20 6.25 150 55 to +150 Unit V V A A W C/W C C

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RJP30H1DPP-M0

Preliminary

Electrical Characteristics
(Ta = 25C)
Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Switching time Symbol ICES IGES VGE(off) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf Min 2.5 Typ 1.5 740 40 17 23 4 8 0.02 0.08 0.04 0.15 Max 1 100 5 2 Unit A nA V V pF pF pF nC nC nC s s s s Test Conditions VCE = 360 V, VGE = 0 VGE = 30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 30A, VGE = 15 V Note3 VCE = 25 V VGE = 0 f = 1 MHz VGE = 15 V VCE = 150 V IC = 30 A IC = 30 A RL = 5 VGE = 15 V RG = 5

Notes: 3. Pulse test

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RJP30H1DPP-M0

Preliminary

Main Characteristics
Maximum Safe Operation Area
1000
s

Typical Output Characteristics (1)

100 Ta = 25C Pulse Test 7.5 V 8V 7V 6.5 V 6V 40 5.5 V 20 0

100

PW

Collector Current IC (A)

Collector Current IC (A)

10

80

10

9V 10 V

10

60

15 V

0.1 Ta = 25C 1 shot pulse 0.01 0.1 1 10 100 1000

VGE = 5 V

Collector to Emitter Voltage VCE (V)

Collector to Emitter Voltage VCE (V)

Typical Output Characteristics (2)

200 Ta = 25C Pulse Test 14 V 15 V 12 V 11 V 50

Typical Transfer Characteristics

VCE = 10 V Pulse Test 40

Collector Current IC (A)

160

10 V 9V 8V 7V 6V

120

Collector Current IC (A)

30

80

20

40

10 0

VGE = 5 V
0 0 2 4 6 8 10

Tc = 75C 25C 25C

10

Collector to Emitter Voltage VCE (V)

Gate to Emitter Voltage VGE (V)

Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical)

Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage VCE(sat) (V)
5 IC = 30 A 60 A 90 A

Collector to Emitter Saturation Voltage vs. Collector Current (Typical)

10 VGE = 15 V Pulse Test

Tc = 25C 1 25C 75C

1 Pulse Test Ta = 25C 0 0 4 8 12 16 20

0.1 1 10 100

Gate to Emitter Voltage VGE (V)

Collector Current IC (A)

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RJP30H1DPP-M0
Typical Capacitance vs. Colloctor to Emitter Voltage
10000 VGE = 0 V, f = 1 MHz Ta = 25C

Preliminary

Dynamic Input Characteristics (Typical)

Colloctor to Emitter Voltage VCE (V)

Capacitance C (pF)

1000

Cies

600

VCC = 150 V IC = 30 A Ta = 25C

VGE

12

100 Coes 10 Cres 1

400

200 VCE 0 0 8 16 24 32

20

40

60

80

100

0 40

Colloctor to Emitter Voltage VCE (V)

Gate Charge Qg (nC)

Switching Characteristics (Typical) (1)

1000 VCC = 150 V, VGE = 15 V Rg = 5 , Ta = 25C

Switching Characteristics (Typical) (2)

1000 IC = 30 A, VGE = 15 V RL = 5 , Ta = 25C

Switching Time t (ns)

tf 100 td(off) tr td(on) 10 1 10 100

Switching Time t (ns)

tf 100 tr td(off) td(on) 10 1 10 100

Colloctor Current IC (A)

Gate Resistance Rg ()

Switching Characteristics (Typical) (3)

1000 IC = 30 A, VGE = 15 V RL = 5 , Rg = 5

Switching Time t (ns)

tf 100 tr td(off) td(on) 10 0 25 50 75 100 125 150

Case Temperature Tc (C)

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Gate to Emitter Voltage VGE (V)

800

16

RJP30H1DPP-M0
Normalized Transient Thermal Impedance vs. Pulse Width
10 Tc = 25C 3 D=1 0.5 0.3 0.2
0.1

Preliminary

0.1 0.03

0.05
0.0 2
lse

PDM PW T 1m 10 m 100 m 1

D=

PW T

0.01

u 1 0.0 ot p h s 1

10

Pulse Width PW (s)

Switching Time Test Circuit

Ic Monitor RL Vin Monitor Vin 10%

Waveform
90%

90% Rg D.U.T. . VCC Ic td(on) 10% ton

90%

Vin = 15 V

10% tr td(off) toff tf

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RJP30H1DPP-M0

Preliminary

Package Dimensions
Package Name TO-220FL JEITA Package Code RENESAS Code PRSS0003AF-A Previous Code TO-220FL MASS[Typ.] 1.5g

Unit: mm

10.0 0.3

2.8 0.2

3. 0 0. 3

15.0 0.3

3.2 0.2

3.6 0.3

12.5 0.5

1.15 0.2 1.15 0.2

0.75 0.15 0.40 0.15 2.54 0.25 2.54 0.25

6.5 0.3 2.6 0.2 4.5 0.2

Ordering Information
Orderable Part Number RJP30H1DPP-M0-T2 Quantity 600 pcs Shipping Container Box (Tube)

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