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2SJ681
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (UMOSIII)

2SJ681
Relay Drive, DCDC Converter and Motor Drive Applications

Unit: mm
MAX

High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 60 V) Enhancement mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)

Low drainsource ON resistance: RDS (ON) = 0.12 (typ.)

4-V gate drive

MAX

Maximum Ratings (Ta = 25C)

Characteristics Drainsource voltage Draingate voltage (RGS = 20 k) Gatesource voltage Drain current Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalenche energy (Note 3) Channel temperature Storage temperature range DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 20 5 20 20 40.5 5 2 150 55~150 Unit V V V A A W mJ A mJ C C

MAX 1 MAX

Pulse(Note 1)

JEDEC JEITA TOSHIBA

2-7J2B

Weight: 0.36 g (typ.)

Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (chc) Rth (cha) Max 6.25 125 Unit C / W C / W

Note 1: Ensure that the channel temperature does not exceed 150. Note 2: VDD = 25 V, Tch = 25C (initial), L = 2.2 mH, RG = 25 , IAR = 5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.

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2SJ681
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain cutoff current Drainsource breakdown voltage Gate threshold voltage Drainsource ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turnon time Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VDD 48 V, VGS = 10 V, ID = 5 A Duty < = 1%, tw = 10 s 0V VGS 10 V 4.7 ID = 2.5 A
Output

Test Condition VGS = 16 V, VDS = 0 V VDS = 60 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = 20 V VDS = 10 V, ID = 1 mA VGS = 4 V, ID = 2.5 A VGS = 10 V, ID = 2.5 A VDS = 10 V, ID = 2.5 A

Min 60 35 0.8 2.5

Typ. 0.16 0.12 5.0 700 60 90 14 24

Max 10 100 2.0 0.25 0.17

Unit A A V V V S

VDS = 10 V, VGS = 0 V, f = 1 MHz

pF

Switching time

RL = 12 VDD 30 V

ns

Fall time Turnoff time Total gate charge (Gatesource plus gatedrain) Gatesource charge Gatedrain (miller) charge

14 95 15 11 4

nC

Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 5 A, VGS = 0 V IDR = 5 A, VGS = 0 V dlDR / dt = 50 A / S Min Typ. 40 32 Max 5 20 1.7 Unit A A V ns nC

Marking

J681

Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.

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2SJ681

ID VDS
5 8 10 6 4. 3.5 Common source Tc = 25C Pulse test 10 10 8 6 4

ID VDS
Common source Tc = 25C Pulse test 3.5 6

Drain current ID (A)

3 2.8 2 VGS = 2.5V 1

Drain current ID (A)

VGS = 2.5 V

0.4

0.8

1.2

1.6

2.0

10

Drainsource voltage

VDS (V)

Drainsource voltage

VDS (V)

ID VGS
10 Common source VDS = 10 V Pulse test 2.0

VDS VGS
Common source Tc = 25C Pulse test

(V)
1.6

Drain current ID (A)

VDS
25

Drainsource voltage

1.2

0.8 5 0.4 2.5 ID = 1.2 A 0 0 4 8 12 16 20

100

Tc = 55C

Gatesource voltage VGS

(V)

Gatesource voltage VGS

(V)

Yfs ID (S)
100 Common source VDS = 10 V Pulse test 0.5 Common source Tc = 25C Pulse test

RDS (ON) ID

Forward transfer admittance Yfs

Drainsource ON resistance RDS (ON) ()

0.4

10

Tc = 55C 100 25

0.3

0.2

4 V

0.1

VGS = 10V

0.1 0.1

10

100

0 0

10

Drain current ID (A)

Drain current ID (A)

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2SJ681

RDS (ON) Tc
0.4 Common source Pulse test 10 Common source Tc = 25C Pulse test

IDR VDS
5 10

0.3 2.5

ID = 5 A 1.2

Drain reverse current IDR (A)

Drainsource ON resistance RDS (ON) ()

0.2 VGS = 4 V 1.2 0.1 VGS = 10 V 0 80 2.5

VGS = 0 V

0.1 40 0 40 80 120 160

0.2

0.4

0.6

0.8

1.0

1.2

Case temperature Tc

(C)

Drainsource voltage

VDS (V)

Capacitance VDS
10000 Common source

Vth Tc
2.0

Tc = 25C 1000 Ciss

Gate threshold voltage Vth (V)

VGS = 0 V f = 1 MHz

(pF)

1.6

Common source VDS = 10 V ID = 1 mA Pulse test

Capacitance C

1.2

100

Coss

0.8

Crss 10 0.1

0.4

10

100

0 80

40

40

80

120

160

Drainsource voltage

VDS (V)

Case temperature

Tc

(C)

PD Tc
40 50 VDS

Dynamic input/output characteristics

25 ID = 5 A 40 Ta = 25C Pulse test 30 15

Drain power dissipation PD (W)

(V)

30

20

Drainsource voltage VDS

20

12V

24V

10

10

10 VGS 0

VDD = 48 V

40

80

120

160

200

10

15

20

25

30

Case temperature

Tc

(C)

Total gate charge

Qg

(nC)

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Gatesource voltage VGS

20

(V)

Common source

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2SJ681

rth tw
10

Normalized transient thermal impedance

rth (t)/Rth (ch-c)

Duty = 0.5 0.2 0.1

Single Pulse PDM 0.05 0.02 0.01 t T Duty = t/T Rth (ch-c) = 6.25C/W 100 1m 10 m 100 m 1 10

0.1

0.01 10

Pulse width

tw

(s)

Safe operating area

100 50

EAS Tch

(mJ)
1 ms * 100 s *

ID max (pulsed) *

40

(A)

10

EAS Avalanche energy

Drain current

ID

ID max (continuous) DC operation Tc = 25C

30

20

*: Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature.

10

VDSS max 10 100

0.1 0.1

0 25

50

75

100

125

150

Channel temperature (initial) Tch

(C)

Drain-source voltage

VDS (V)

0V 15 V

BVDSS IAR VDD Test circuit VDS

Wave form AS = 1 B VDSS L I2 B 2 V DD VDSS

RG = 25 VDD = 25 V, L = 2.2 mH

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2SJ681

RESTRICTIONS ON PRODUCT USE

The information contained herein is subject to change without notice. 021023_D

060116EAA

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc. 021023_A The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA products listed in this document shall be made at the customers own risk. 021023_B The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. 060106_Q The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. 021023_C

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