STP5NK100Z - STF5NK100Z STW5NK100Z

N-channel 1000V - 2.7 - 3.5A - TO-220/TO-220FP/TO-247 Zener-protected SuperMESH Power MOSFET

General features
Type STF5NK100Z STP5NK100Z STW5NK100Z

VDSS (@Tjmax) 1000 V 1000 V 1000 V

RDS(on) < 3.7 < 3.7 < 3.7

ID
3

3.5 A 3.5 A 3.5 A TO-220

TO-220FP

Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatibility
TO-247

Description
The SuperMESH series is obtained through an extreme optimization of STs well established stripbased PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products.

Internal schematic diagram

Applications

Switching application

Order codes
Part number STF5NK100Z STP5NK100Z STW5NK100Z Marking F5NK100Z P5NK100Z W5NK100Z Package TO-220FP TO-220 TO-247 Packaging Tube Tube Tube

August 2006

Rev 4

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Contents

STP5NK100Z - STF5NK100Z - STW5NK100Z

Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) ............................ 7

3 4 5

Test circuit

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

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Electrical ratings

Electrical ratings
Table 1.
Symbol

Absolute maximum ratings

Parameter Value TO-220/TO-247 TO-220FP V V 3.5 (1) 2.2 (1) 14 (1) 30 0.24 4000 4.5 2500 A A A W W/C V V/ns V Unit

VDS VGS ID ID IDM(2) PTOT

Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC=100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor 3.5 2.2 14 125 1

1000 30

VESD(G-S) dv/dt (3) VISO TJ Tstg

Gate source ESD (HBM-C=100pF, R=1.5) Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s; Tc= 25C) Operating junction temperature Storage temperature

-55 to 150

1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD 3.5A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX.

Table 2.
Symbol

Thermal data
Parameter TO-220 TO-247 Value TO-220FP 4.2 62.5 300 C/W C/W C Unit

Rthj-case Rthj-a Tl

Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose

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Electrical ratings

STP5NK100Z - STF5NK100Z - STW5NK100Z

Table 3.
Symbol IAR EAS

Avalanche characteristics
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25C, Id=Iar, Vdd=50V) Value 3.5 250 Unit A mJ

Table 4.
Symbol BVGSO

Gate-source zener diode

Parameter Gate-source breakdown voltage Test conditions Igs= 1mA (open drain) Min. 30 Typ. Max. Unit V

1.1

Protection features of gate-to-source zener diodes

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the devices ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the devices integrity. These integrated Zener diodes thus avoid the usage of external components.

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Electrical characteristics

Electrical characteristics
(TCASE=25C unless otherwise specified) Table 5.
Symbol V(BR)DSS

On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Test conditions ID = 1mA, VGS= 0 VDS = Max rating, VDS = Max rating, Tc = 125C Min. 1000 1 50
10

Typ.

Max.

Unit V A A A V

IDSS

IGSS VGS(th) RDS(on)

Gate body leakage current VGS = 20V (VGS = 0) Gate threshold voltage Static drain-source on resistance VDS = VGS, ID = 100A VGS = 10V, ID = 1.75 A 3 3.75 2.7

4.5 3.7

Table 6.
Symbol gfs (1) Ciss Coss Crss Cosseq(2). td(on) tr td(off) tf Qg Qgs Qgd

Dynamic
Parameter Test conditions Min. Typ. 4 1154 106 21.3 46.8 22.5 7.7 51.5 19 42 7.3 21.7 59 Max. Unit S pF pF pF pF ns ns ns ns nC nC nC

Forward transconductance VDS =15V, ID = 1.75A Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Turn-on delay time Rise time Off-voltage rise time Fall time Total gate charge Gate-source charge Gate-drain charge

VDS =25V, f=1 MHz, VGS=0

VGS=0, VDS =0V to 800V VDD=500 V, ID= 1.75 A, RG=4.7, VGS=10V (see Figure 20) VDD=800V, ID = 3.5 A VGS =10V (see Figure 21)

1. Pulsed: pulse duration=300s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS

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Electrical characteristics

STP5NK100Z - STF5NK100Z - STW5NK100Z

Table 7.
Symbol ISD ISDM VSD
(1) (2)

Source drain diode

Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 3.5 A, VGS=0 ISD= 3.5 A, di/dt = 100A/s, VDD=30 V (see Figure 22) ISD= 3.5 A, di/dt = 100A/s, VDD=35 V, Tj=150C (see Figure 22) 605 3.09 10.5 742 4.2 11.2 Test conditions Min Typ. Max 3.5 14 1.6 Unit A A V ns C A ns C A

trr Qrr IRRM trr Qrr IRRM

1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5%

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Electrical characteristics

2.1
Figure 1.

Electrical characteristics (curves)

Safe operating area for TO-220FP Figure 2. Thermal impedance for TO-220FP

Figure 3.

Safe operating area for TO-220

Figure 4.

Thermal impedance for TO-220

Figure 5.

Safe operating area for TO-247

Figure 6.

Thermal impedance for TO-247

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Electrical characteristics Figure 7. Output characterisics

STP5NK100Z - STF5NK100Z - STW5NK100Z Figure 8. Transfer characteristics

Figure 9.

Transconductance

Figure 10. Static drain-source on resistance

Figure 11. Gate charge vs gate-source voltage Figure 12. Capacitance variations

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STP5NK100Z - STF5NK100Z - STW5NK100Z Figure 13. Normalized gate threshold voltage vs temperature

Electrical characteristics Figure 14. Normalized on resistance vs temperature

Figure 15. Source-drain diode forward characteristics

Figure 16. Normalized BVdss vs temperature

Figure 17. Maximum avalanche energy vs temperature

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Test circuit

STP5NK100Z - STF5NK100Z - STW5NK100Z

Test circuit
Figure 19. Unclamped Inductive waveform

Figure 18. Unclamped Inductive load test circuit

Figure 20. Switching times test circuit for resistive load

Figure 21. Gate charge test circuit

Figure 22. Test circuit for inductive load switching and diode recovery times

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Package mechanical data

Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com

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Package mechanical data

STP5NK100Z - STF5NK100Z - STW5NK100Z

TO-220FP MECHANICAL DATA

mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409

DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7

L3 L6 L7
F1 F

G1 H
F2
L2 L5

E
1 2 3
L4

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Package mechanical data

TO-220 MECHANICAL DATA

DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154

P
Q

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Package mechanical data

STP5NK100Z - STF5NK100Z - STW5NK100Z

TO-247 MECHANICAL DATA

mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620

DIM. A A1 b b1 b2 c D E e L L1 L2 P R S

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Revision history

Revision history
Table 8.
Date 12-Oct-2004 08-Sep-2005 16-Dec-2005 16-Aug-2006

Revision history
Revision 1 2 3 4 First release Complete datasheet Inserted ecopack indication New template, no content change Changes

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