FCP16N60

FCP16N60 / FCPF16N60 600V N-Channel MOSFET
December 2008
FCP16N60 / FCPF16N60
600V N-Channel MOSFET Features
650V @TJ = 150C Typ. Rds(on) = 0.22 Ultra low gate charge (typ. Qg=55nC) Low effective output capacitance (typ. Coss.eff=110pF) 100% avalanche tested
SuperFET
Description
SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
TM
RoHS Compliant
G G DS
TO-220
FCP Series
GD S
TO-220F
FCPF Series
Absolute Maximum Ratings

Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
(Note 1)
FCP16N60
16 10.1 48
FCPF16N60
600 16* 10.1* 48*
Unit
V A A A V mJ A mJ V/ns
30 450 16 20.8 4.5 167 1.33 -55 to +150 300 37.9 0.3
W W/C C C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8 from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RJC RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
FCP16N60
0.75 62.5
FCPF16N60
3.3 62.5
Unit
C/W C/W
2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FCP16N60 / FCPF16N60 Rev. B1
Package Marking and Ordering Information

Device Marking
FCP16N60 FCPF16N60
Device
FCP16N60 FCPF16N60
Package
TO-220 TO-220F
Reel Size
-
Tape Width
-
Quantity
50 50
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS / TJ BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd
TC = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage
Conditions
VGS = 0V, ID = 250A, TJ = 25C VGS = 0V, ID = 250A, TJ = 150C
Min
600 --------
Typ
-650 0.6 700 -----
Max Units
----1 10 100 -100 V V V/C V A A nA nA
Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
ID = 250A, Referenced to 25C VGS = 0V, ID = 16A VDS = 600V, VGS = 0V VDS = 480V, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 8A VDS = 40V, ID = 8A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance 3.0 ---0.22 11.5 5.0 0.26 -V S
Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz VDS = 0V to 400V, VGS = 0V VDD = 300V, ID = 16A RG = 25 -----1730 960 85 45 110 2250 1150 -60 -pF pF pF pF pF
Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480V, ID = 16A VGS = 10V
(Note 4, 5) (Note 4, 5)
--------
42 130 165 90 55 10.5 28
85 270 340 190 70 13 --
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr
NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 8A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 16A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS =16A VGS = 0V, IS = 16A dIF/dt =100A/s
(Note 4)
------
---435 7.0
16 48 1.4 ---
A A V ns C
2 FCP16N60 / FCPF16N60 Rev. B1
Typical Performance Characteristics

Figure 1. On-Region Characteristics
10
2
Figure 2. Transfer Characteristics

10
2
VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V
ID, Drain Current [A]
ID , Drain Current [A]
10
10
150 C
25 C 10
0
-55 C
*Note: 1. VDS = 40V 2. 250s Pulse Test
10
*Notes : 1. 250s Pulse Test 2. TC = 25 C

-1 0 1
10
10
10
10
VDS, Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
10
2
0.6
0.5
RDS(ON) [],
0.4
VGS = 10V
IDR , Reverse Drain Current [A]
Drain-Source On-Resistance
10
0.3
VGS = 20V
0.2
10
150 C
25 C
*Notes : 1. VGS = 0V 2. 250 s Pulse Test
0.1
*Note : TJ = 25 C
o
0.0 0 5 10 15 20 25 30 35 40 45 50
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-Drain Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
7000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd
12
6000
VGS, Gate-Source Voltage [V]
Crss = Cgd
VDS = 100V
10
VDS = 250V VDS = 480V
5000
Capacitance [pF]
4000
Coss
*Notes : 1. VGS = 0 V 2. f = 1 MHz
3000
Ciss
2000
1000
Crss
2
*Note : ID = 16A
0 -1 10
10
10
0 0 10 20 30 40 50 60
QG, Total Gate Charge [nC]
Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature
1.2
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
Drain-Source On-Resistance
2.5
1.1
RDS(ON), (Normalized)
2.0
1.0
1.5
1.0
*Notes : 1. VGS = 10 V 2. ID = 8 A
0.9
*Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
0.8 -100
-50
50
100
o
150
200
0.0 -100
-50
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9-1. Maximum Safe Operating Area for FCP16N60

Operation in This Area is Limited by R DS(on)
Figure 9-2. Maximum Safe Operating Area for FCPF16N60

Operation in This Area is Limited by R DS(on)
10
10 us 100 us
10
10 us
10
1 ms DC
10
100 us 1 ms 10 ms
10
10
100 ms DC
*Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
10
-1
*Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse

o
10
-1
10
-2
10
10
10
10
10
-2
10
10
10
10
Figure 10. Maximum Drain Current vs. Case Temperature
20
15
10
0 25
50
75
100
125
150
TC, Case Temperature [C]
Figure 11-1. Transient Thermal Response Curve (FCP16N60)
10
ZJC(t), Thermal Response
D = 0 .5 0 .2
10
-1
* N o te s : o 1 . Z JC (t) = 0 .7 5 C /W M a x. 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z JC (t)
0 .1 0 .0 5 0 .0 2 0 .0 1
PDM t1 t2
s in g le p u ls e
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve (FCPF16N60)

10
1
ZJC(t), Thermal Response
D = 0 .5
10
0
0 .2 0 .1 0 .0 5
10
-1
*N o te s : o 1 . Z J C (t) = 3 .3 C /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t)
0 .0 2 0 .0 1
PDM t1
s in g le p u ls e
t2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
Peak Diode Recovery dv/dt Test Circuit & Waveforms
Mechanical Dimensions
TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) 3.60 0.10 (1.70) 4.50 0.20
1.30 0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 0.05
+0.10
2.40 0.20
10.00 0.20
Dimensions in Millimeters
Mechanical Dimensions (Continued)
TO-220F
3.30 0.10 10.16 0.20 (7.00) 3.18 0.10 2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47 9.75 0.30 0.80 0.10

(3 0 )
0.35 0.10 2.54TYP [2.54 0.20]
#1 2.54TYP [2.54 0.20] 4.70 0.20
0.50 0.05
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
15.87 0.20
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ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporations Anti-Counterfeiting Policy. Farichilds Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchilds quality standards for handing and storage and provide access to Farichilds full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete Product Status Formative / In Design First Production Full Production Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I37
FCP16N60 / FCPF16N60 Rev. B1
10

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FCP16N60 / FCPF16N60 600V N-Channel MOSFET

Absolute Maximum Ratings

*Drain current limited by maximum junction temperature

2008 Fairchild Semiconductor Corporation

FCP16N60 / FCPF16N60 Rev. B1

FCP16N60 / FCPF16N60 600V N-Channel MOSFET

Package Marking and Ordering Information

TC = 25C unless otherwise noted

42 130 165 90 55 10.5 28

85 270 340 190 70 13 --

2 FCP16N60 / FCPF16N60 Rev. B1

FCP16N60 / FCPF16N60 600V N-Channel MOSFET

Typical Performance Characteristics

Figure 2. Transfer Characteristics

ID, Drain Current [A]

ID , Drain Current [A]

*Notes : 1. 250s Pulse Test 2. TC = 25 C

VDS, Drain-Source Voltage [V]

VGS , Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage

IDR , Reverse Drain Current [A]

ID, Drain Current [A]

VSD , Source-Drain Voltage [V]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

VGS, Gate-Source Voltage [V]

VDS = 250V VDS = 480V

VDS, Drain-Source Voltage [V]

QG, Total Gate Charge [nC]

3 FCP16N60 / FCPF16N60 Rev. B1

FCP16N60 / FCPF16N60 600V N-Channel MOSFET

Typical Performance Characteristics (Continued)

BVDSS, (Normalized) Drain-Source Breakdown Voltage

*Notes : 1. VGS = 0 V 2. ID = 250 A

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]

Figure 9-1. Maximum Safe Operating Area for FCP16N60

Figure 9-2. Maximum Safe Operating Area for FCPF16N60

ID, Drain Current [A]

ID, Drain Current [A]

*Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse

VDS, Drain-Source Voltage [V]

VDS, Drain-Source Voltage [V]

Figure 10. Maximum Drain Current vs. Case Temperature

ID, Drain Current [A]

TC, Case Temperature [C]

4 FCP16N60 / FCPF16N60 Rev. B1

FCP16N60 / FCPF16N60 600V N-Channel MOSFET

Figure 11-1. Transient Thermal Response Curve (FCP16N60)

ZJC(t), Thermal Response

Figure 11-2. Transient Thermal Response Curve (FCPF16N60)

ZJC(t), Thermal Response

5 FCP16N60 / FCPF16N60 Rev. B1

FCP16N60 / FCPF16N60 600V N-Channel MOSFET

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

6 FCP16N60 / FCPF16N60 Rev. B1

FCP16N60 / FCPF16N60 600V N-Channel MOSFET

Peak Diode Recovery dv/dt Test Circuit & Waveforms

7 FCP16N60 / FCPF16N60 Rev. B1

FCP16N60 / FCPF16N60 600V N-Channel MOSFET

0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]