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1. Description
N-channel enhancement mode eld-effect transistor in a plastic package using TrenchMOS1 technology. Product availability: BST82 in SOT23.
2. Features
I I I I TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package.
3. Applications
I Relay driver I High speed line driver I Logic level translator.
c c
4. Pinning information
Table 1: Pin 1 2 3 Pinning - SOT23, simplied outline and symbol Description gate (g)
3
Simplied outline
Symbol
d
03ab30
SOT23
N-channel MOSFET
1.
Philips Semiconductors
BST82
N-channel enhancement mode eld-effect transistor
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature operating junction temperature source (diode forward) current (DC) peak source (diode forward) current Tsp = 25 C Tsp = 25 C; pulsed; tp 10 s Tsp = 25 C; VGS = 5 V; Figure 2 and 3 Tsp = 100 C; VGS = 5 V; Figure 2 Tsp = 25 C; pulsed; tp 10 s; Figure 3 Tsp = 25 C; Figure 1 Conditions Tj = 25 to 150 C Tj = 25 to 150 C; RGS = 20 k Min 65 65 Max 100 100 20 190 120 0.8 0.83 +150 +150 190 0.8 Unit V V V mA mA A W C C mA A
Source-drain diode
Product specication
2 of 13
Philips Semiconductors
BST82
N-channel enhancement mode eld-effect transistor
03aa17
120
P der (%) 100
03aa25
120
Ider (%) 100
80
80
60
60
40
40
20
20
0 0 25 50 75 100 125
Tsp
150 (oC)
175
25
50
75
100
125
tp = 10 s 100 s
1 ms 10 ms D.C.
P
10-2
tp T
100 ms
tp T
10-3 1 10 102
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
Product specication
3 of 13
Philips Semiconductors
BST82
N-channel enhancement mode eld-effect transistor
7. Thermal characteristics
Table 4: Symbol Rth(j-sp) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to solder point thermal resistance from junction to ambient Conditions mounted on a metal clad substrate; Figure 4 mounted on a printed circuit board; minimum footprint Value 150 350 Unit K/W K/W
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
Product specication
4 of 13
Philips Semiconductors
BST82
N-channel enhancement mode eld-effect transistor
8. Characteristics
Table 5: Characteristics Tj = 25 C unless otherwise specied Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions ID = 10 A; VGS = 0 V Tj = 25 C Tj = 55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 C Tj = 150 C Tj = 55 C IDSS drain-source leakage current VDS = 60 V; VGS = 0 V Tj = 25 C Tj = 150 C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = 20 V; VDS = 0 V VGS = 5 V; ID = 150 mA; Figure 7 and 8 Tj = 25 C Tj = 150 C Dynamic characteristics gfs Ciss Coss Crss ton toff forward transconductance input capacitance output capacitance reverse transfer capacitance turn-on time turn-off time VDD = 50 V; RD = 250 ; VGS = 10 V; RG = 50 ; RGS = 50 IS = 300 mA; VGS = 0 V; Figure 13 IS = 300 mA; dIS/dt = 100 A/s; VGS = 0 V; VDS = 25 V VDS = 5 V; ID = 175 mA; Figure 11 VGS = 0 V; VDS = 10 V; f = 1 MHz; Figure 12 350 25 8.5 5 3 12 40 15 10 10 15 mS pF pF pF ns ns 5 10 23 0.01 10 1.0 10 100 A A nA 1 0.6 2 3.5 V V V 100 89 130 V V Min Typ Max Unit Static characteristics
Source-drain diode VSD trr Qr source-drain (diode forward) voltage reverse recovery time recovered charge 0.95 30 30 1.5 V ns nC
Product specication
5 of 13
Philips Semiconductors
BST82
N-channel enhancement mode eld-effect transistor
03aa63
03aa65
0.7 Tj = 25oC VGS = 10V 5V ID (A) 0.6 0.5 0.4 0.3 3.5 V 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VDS (V) 2 0 1 2 3 4 5 6 7 VGS (V) 8 Tj = 25oC 150oC VDS > ID X RDSon
4V
Tj = 25 C
Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values.
03aa64
Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values.
03aa29
Tj = 25oC
3 a 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -60 -20 20 60 100 140 180 Tj (oC)
4V
5V
VGS = 10V
0.4 ID (A)
0.5
Tj = 25 C
Product specication
6 of 13
Philips Semiconductors
BST82
N-channel enhancement mode eld-effect transistor
3
VGS(th) (V) 2.5 typ
03aa34
10-1 I D
(A) 10-2
03aa37
10-3
min
typ
1.5
min
10-4
1
10-5
0.5
10-6
0 0.5 1 1.5 2 2.5 3 VGS (V)
Tj = 25 C; VDS = 5 V
0.5 gfs 0.45 (S) 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0
Ciss
150oC
10
Coss
Crss 0.1 0.2 0.3 0.4 0.5 0.6 ID (A) 0.7 1 10-1 1 10 VDS (V) 102
VGS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
Product specication
7 of 13
Philips Semiconductors
BST82
N-channel enhancement mode eld-effect transistor
03aa67
1 IS (A) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0
VGS = 0 V
150oC
Tj = 25oC
0.2
0.4
0.6
0.8
1.4
Fig 13. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
Product specication
8 of 13
Philips Semiconductors
BST82
N-channel enhancement mode eld-effect transistor
9. Package outline
Plastic surface mounted package; 3 leads SOT23
HE
v M A
Q A A1
1
e1 e bp
2
w M B detail X Lp
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
EUROPEAN PROJECTION
Product specication
9 of 13
Philips Semiconductors
BST82
N-channel enhancement mode eld-effect transistor
Product specication
10 of 13
Philips Semiconductors
BST82
N-channel enhancement mode eld-effect transistor
Product specication
Production
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
12. Denitions
Short-form specication The data in a short-form specication is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values denition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specication is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specied use without further testing or modication.
13. Disclaimers
Life support These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specied.
Product specication
11 of 13
Philips Semiconductors
BST82
N-channel enhancement mode eld-effect transistor
For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 272 4825
Internet: http://www.semiconductors.philips.com
(SCA70)
Product specication
12 of 13
Philips Semiconductors
BST82
N-channel enhancement mode eld-effect transistor
Contents
1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 26 July 2000 Document order number: 9397 750 07223