MOTOROLA

Designer's

SEMICONDUCTOR TECHNICAL DATA

Order this document by MGY25N120/D

Insulated Gate Bipolar Transistor

NChannel EnhancementMode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltageblocking capability. Short circuit rated IGBTs are specifically suited for applications requiring a guaranteed short circuit withstand time. Fast switching characteristics result in efficient operation at high frequencies. Industry Standard High Power TO264 Package (TO3PBL) High Speed Eoff: 273 mJ/A typical at 125C High Short Circuit Capability 10 ms minimum Robust High Voltage Termination

Data Sheet

MGY25N120
Motorola Preferred Device

IGBT IN TO264 25 A @ 90C 38 A @ 25C 1200 VOLTS SHORT CIRCUIT RATED

G G E

CASE 340G02, Style 5 TO264

MAXIMUM RATINGS (TJ = 25C unless otherwise noted)

Rating CollectorEmitter Voltage CollectorGate Voltage (RGE = 1.0 M) GateEmitter Voltage Continuous Collector Current Continuous @ TC = 25C Continuous @ TC = 90C Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance Junction to Case IGBT Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds Mounting Torque, 632 or M3 screw (1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designers Data for Worst Case Conditions The Designers Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves representing boundaries on device characteristics are given to facilitate worst case design.

Symbol VCES VCGR VGE IC25 IC90 ICM PD TJ, Tstg tsc RJC RJA TL

Value 1200 1200 20 38 25 76 212 1.69 55 to 150 10 0.6 35 260 10 lbfSin (1.13 NSm)

Unit Vdc Vdc Vdc Adc Apk Watts W/C C

ms
C/W C

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

TMOS Motorola Motorola, Inc. 1996

Power MOSFET Transistor Device Data

MGY25N120
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS CollectortoEmitter Breakdown Voltage (VGE = 0 Vdc, IC = 25 Adc) Temperature Coefficient (Positive) EmittertoCollector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc) Zero Gate Voltage Collector Current (VCE = 1200 Vdc, VGE = 0 Vdc) (VCE = 1200 Vdc, VGE = 0 Vdc, TJ = 125C) GateBody Leakage Current (VGE = 20 Vdc, VCE = 0 Vdc) ON CHARACTERISTICS (1) CollectortoEmitter OnState Voltage (VGE = 15 Vdc, IC = 12.5 Adc) (VGE = 15 Vdc, IC = 12.5 Adc, TJ = 125C) (VGE = 15 Vdc, IC = 25 Adc) Gate Threshold Voltage (VCE = VGE, IC = 1.0 mAdc) Threshold Temperature Coefficient (Negative) Forward Transconductance (VCE = 10 Vdc, IC = 25 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (1) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time TurnOff Switching Loss TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time TurnOff Switching Loss Gate Charge (VCC = 720 Vdc, IC = 25 Adc, VGE = 15 Vdc) INTERNAL PACKAGE INDUCTANCE Internal Emitter Inductance (Measured from the emitter lead 0.25 from package to emitter bond pad) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. LE 13 nH (VCC = 720 Vdc, IC = 25 Adc, VGE = 15 Vdc, L = 300 mH RG = 20 , TJ = 125C) Energy losses include tail (VCC = 720 Vdc, IC = 25 Adc, VGE = 15 Vdc, L = 300 mH RG = 20 , TJ = 25C) Energy losses include tail td(on) tr td(off) tf Eoff td(on) tr td(off) tf Eoff QT Q1 Q2 91 124 196 310 2.44 88 126 236 640 5.40 97 31 40 4.69 mJ nC mJ ns ns (VCE = 25 Vdc, VGE = 0 Vdc, f = 1.0 MHz) Cies Coes Cres 2795 181 45 pF VCE(on) VGE(th) 4.0 gfe 6.0 10 12 8.0 2.37 2.15 2.98 3.24 4.19 Vdc mV/C Mhos Vdc BVCES 1200 BVECS ICES IGES 100 2500 250 nAdc 25 960 Vdc mV/C Vdc Adc Symbol Min Typ Max Unit

Motorola TMOS Power MOSFET Transistor Device Data

MGY25N120
TYPICAL ELECTRICAL CHARACTERISTICS
75 IC, COLLECTOR CURRENT (AMPS) TJ = 25C 75 VGE = 20 V 17.5 V 15 V 60 IC, COLLECTOR CURRENT (AMPS) 60 TJ = 125C VGE = 20 V 17.5 V 15 V

45

12.5 V

45

12.5 V

30 10 V 15

30 10 V 15

VCE, COLLECTORTOEMITTER VOLTAGE (VOLTS)

VCE, COLLECTORTOEMITTER VOLTAGE (VOLTS)

Figure 1. Output Characteristics, TJ = 25C

70 IC, COLLECTOR CURRENT (AMPS) 60 50 40 30 20 25C 10 0 4 6 8 10 12 14 16 VCE = 10 V 250 s PULSE WIDTH TJ = 125C VCE , COLLECTORTOEMITTER VOLTAGE (VOLTS) 4

Figure 2. Output Characteristics, TJ = 125C

VGE = 15 V 250 s PULSE WIDTH IC = 20 A 3 15 A 10 A 2

1 50

50

100

150

VGE, GATETOEMITTER VOLTAGE (VOLTS)

TJ, JUNCTION TEMPERATURE (C)

Figure 3. Transfer Characteristics

Figure 4. CollectortoEmitter Saturation Voltage versus Junction Temperature

VGE, GATETOEMITTER VOLTAGE (VOLTS) 16 QT 14 12 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 TJ = 25C IC = 25 A Q1 Q2

10000

VCE = 0 V Cies

TJ = 25C

C, CAPACITANCE (pF)

1000 Coes 100 Cres

10

10

15

20

25

GATETOEMITTER OR COLLECTORTOEMITTER VOLTAGE (VOLTS)

Qg, TOTAL GATE CHARGE (nC)

Figure 5. Capacitance Variation

Figure 6. GatetoEmitter Voltage versus Total Charge

Motorola TMOS Power MOSFET Transistor Device Data

MGY25N120
TOTAL SWITCHING ENERGY LOSSES (mJ) TOTAL SWITCHING ENERGY LOSSES (mJ) 6 IC = 25 A 5.5 5 4.5 4 3.5 3 2.5 2 10 20 30 40 50 10 A 15 A VCC = 720 V VGE = 15 V TJ = 125C IC = 25 A 7 6 5 4 3 2 10 A 1 0 25 50 75 100 125 150 15 A VCC = 720 V VGE = 15 V RG = 20 IC = 25 A

RG, GATE RESISTANCE (OHMS)

TC, CASE TEMPERATURE (C)

Figure 7. Total Switching Losses versus Gate Resistance

7 TURNOFF ENERGY LOSSES (mJ) 6 5 4 3 2 1 0 0 5 10 15 20 25 VCC = 720 V VGE = 15 V RG = 20 TJ = 125C I , INSTANTANEOUS FORWARD CURRENT (AMPS) F

Figure 8. Total Switching Losses versus Case Temperature

50

40 TJ = 125C TJ = 25C 20

30

10 0

IC, COLLECTORTOEMITTER CURRENT (AMPS)

VFM, FORWARD VOLTAGE DROP (VOLTS)

Figure 9. TurnOff Losses versus CollectortoEmitter Current

100

Figure 10. Maximum Forward Drop versus Instantaneous Forward Current

IC, COLLECTORTOEMITTER CURRENT (A)

10

1 VGE = 15 V RGE = 20 TJ = 125C 1 10 100 1000 VCE, COLLECTORTOEMITTER VOLTAGE (VOLTS)

0.1

Figure 11. Reverse Biased Safe Operating Area

Motorola TMOS Power MOSFET Transistor Device Data

MGY25N120
1.0 D = 0.5 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE

0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.01 1.0E05 1.0E04 1.0E03 1.0E02 t, TIME (s) 1.0E01 t1 P(pk) RJC(t) = r(t) RJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) TC = P(pk) RJC(t) 1.0E+00 1.0E+01

Figure 12. Thermal Response

Motorola TMOS Power MOSFET Transistor Device Data

MGY25N120
PACKAGE DIMENSIONS

0.25 (0.010) B Q

T B

T C

U N A R Y P K
1 2 3

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX 2.8 2.9 19.3 20.3 4.7 5.3 0.93 1.48 1.9 2.1 2.2 2.4 5.45 BSC 2.6 3.0 0.43 0.78 17.6 18.8 11.0 11.4 3.95 4.75 2.2 2.6 3.1 3.5 2.15 2.35 6.1 6.5 2.8 3.2 INCHES MIN MAX 1.102 1.142 0.760 0.800 0.185 0.209 0.037 0.058 0.075 0.083 0.087 0.102 0.215 BSC 0.102 0.118 0.017 0.031 0.693 0.740 0.433 0.449 0.156 0.187 0.087 0.102 0.122 0.137 0.085 0.093 0.240 0.256 0.110 0.125

F 2 PL G

W D 3 PL 0.25 (0.010)
M

J H Y Q
S

DIM A B C D E F G H J K L N P Q R U W

STYLE 5: PIN 1. GATE 2. COLLECTOR 3. EMITTER

CASE 340G02 TO264 ISSUE E

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 18004412447 or 6023035454 MFAX: RMFAX0@email.sps.mot.com TOUCHTONE 6022446609 INTERNET: http://DesignNET.com

JAPAN: Nippon Motorola Ltd.; TatsumiSPDJLDC, 6F SeibuButsuryuCenter, 3142 Tatsumi KotoKu, Tokyo 135, Japan. 038135218315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 85226629298

Motorola TMOS Power MOSFET Transistor MGY25N120/D Device Data

*MGY25N120/D*