CURRICULUM VITAE GENNADY GILDENBLAT The Pennsylvania State University Department of Electrical Engineering 121 Electrical Engineering East

Building University Park PA 16802 Telephone: (814) 865-0519 FAX: (814) 865-7065 Gildenblat@psu.edu RESEARCH INTERESTS PHYSICS AND MODELING OF SEMICONDUCTOR DEVICES SEMICONDUCTOR TRANSPORT PHYSICS INTEGRATED CIRCUIT TECHNOLOGY OBJECTIVES Expand an internationally renowned externally funded compact modeling research program to develop industry standard models of SOI and multiple gate MOSFETs Establish close interactions with leading semiconductor companies Formulate a definitive engineering theory of nanoscale transistors with applications to advanced circuit design Include the latest advances in semiconductor device physics and modeling into both graduate and undergraduate EE curriculum

EDUCATION 1981-1984 Rensselaer Polytechnic Institute, Troy, NY Ph.D., Solid-State Physics St. Petersburg Electrical Engineering Institute St. Petersburg, Russia MSEE (with honors) Majored in Microelectronics

1969-1975

PROFESSIONAL EXPERIENCE 1991-present 1986-1991 Professor of Electrical Engineering Associate Professor of Electrical Engineering The Pennsylvania State University University Park, PA 16802

Research Activities

Principal areas of research include semiconductor transport physics and modeling, novel semiconductor devices, low temperature (10-300K) CMOS, hot carrier effects in MOS integrated circuits, and electronic applications of wide-gap semiconductors. Developed two surface-potential-based compact MOSFET models for applications in circuit simulators (SP and PSP). In December 2005, after winning a competition with leading modeling groups in the US, Europe and Japan, the PSP model (a joint development with Philips) was selected as a new industry standard by the Compact Model Council (CMC). Awarded First Prize in the CMC Next Generation MOSFET model project competition. This model development work has been continuously funded externally since 1997 by Motorola, Freescale, Philips, IBM, LSI Logic, Mentor Graphics, Xpedion Design Systems, SRC (Semiconductor Research Corporation) and CMC. To facilitate the development of the SP and PSP models, found solutions of several long-standing problems of compact modeling including an extremely accurate non-iterative approximation for the surface potential, the symmetric inversion charge linearization method, a splinecollocation-based NQS model, etc. Extended the theoretical foundation of the one-flux method for the analysis of quasi-ballistic transport in extreme semiconductor devices. Found the exact solution for the one-flux scattering matrix in the case of an arbitrary non-absorbing potential barrier. Used it to develop a compact MOSFET model that describes the transition from driftdiffusion to quasi-ballistic transport in extremely scaled semiconductor devices. Performed circuit simulations based on the new technique. Investigated general features of resonant tunneling in asymmetric tunneling structures. Showed that time-reversal symmetry relations take different forms for different energy ranges. Developed a new version of the Airy function based transfer matrix method free from common limitations. Proposed a new field emitter based on quantum mechanical coupling of the resonant tunneling injector to a vacuum gap. Developed a new approach to the theory of current injection with a nonlinear velocity-field dependence. Used it to obtain exact analytical solutions for several problems, which in the past were treated numerically. Discovered the anomalous temperature dependence of electron trapping in MOS devices operated in the tunneling injection regime. Developed new device and mobility models for CryoCMOS. Published the first study of the temperature-dependent definition of the effective vertical field in MOS transistors. Demonstrated feasibility of electronic applications of semiconductor diamond films. Fabricated first thin-film diamond diodes and MOSFETs. Reported the first high-temperature (580oC) semiconductor

devices based on thin-film diamond. 1984-1986 Principal Engineer Advanced Semiconductor Development Digital Equipment Corporation Hudson, MA

Research Activities Project manager for cryogenic CMOS project (device physics part) and ultrathin gate insulator program. Developed CryoCMOS scaling theory, performed experiments and analyzed the potential of CryoCMOS approach at the device, circuit, and system levels. Developed low temperature model of hot carrier effects in n-channel MOSFETs. Served as a consultant for other projects in the areas of submicron device physics, reliability, hot carrier effects, and parametric testing of semiconductors. 1979-1984 Member of Research and Development Staff General Electrical Company Corporate Research and Development Center Schenectady, NY

Research Activities Investigated hot carrier effects in MOSFETs. Incorporated hot carrierresistant devices into a 1.25 micron CMOS bulk process. Published the results of the first study of the effect of hot carrier induced degradation on low-frequency MOSFET noise. Developed new measurement techniques for analysis of the insulatorsemiconductor interface. Worked on contact metallization development and electrical properties of implanted shallow junctions. Published analytical models of impurity profiles based on the self-similar solution of nonlinear diffusion equation. Evaluated new insulators for VLSI applications including oxinitrides, silicone polyimide, PECVD oxide. Published the results of the first electrical characterization of silicone polyimide. Used the Greens function technique to develop a theory of impure spin1/2 XY chains including Friedel-type oscillations of the local magnetization and critical exponents for zero-temperature phase transition in the magnetic field. 1975-1978 Research Engineer State Institute of Resistors and Capacitors

St. Petersburg, Russia Research Activities Developed a theory of non-steady state space-charge-limited currents in unipolar semiconductors. Published an investigation of current injection in non-uniform solids. Worked on physics, technology and applications of metal-oxide based varistors. TEACHING 1986 - present Developed several graduate-level courses in microelectronics. These include dvanced Device Physics, Semiconductor Transport, Quantum Processes in Semiconductors. Taught numerous graduate and undergraduate courses in semiconductor electronics, introductory circuit design and electromagnetic field theory. Supervised seven Ph.D. dissertations and numerous MSEE theses. PUBLICATIONS Over 130 publications (including several books and patents) in the areas of microelectronics and solid-state physics PROFESSIONAL SOCIETIES Senior Member of the IEEE, member of the Electron Device Society COMMITTEES AND CONFERENCES Member of the Technical Program Committee for the 2006 IEEE Custom Integrated Circuits Conference (CICC) Session Chair, 2006 Workshop on Compact Modeling, May 2006, Boston, MA Member of the Panel on Surface-Potentialversus Charge-Based Compact MOSFET Models, 2005 Workshop on Compact Modeling, May 2005, Anaheim, CA Member of the IEEE Committee on Compact Modeling, 2004-present Member of the Organizing Committee for the 2001 International Device Research Symposium, Washington DC 2001 Co-chair of the MRS symposium on Diamond, SiC and Nitride Wide Bandgap Semiconductors, San Francisco, CA, 1994 Chair of the 1991 SPIE Conference on Metallization, San Jose, CA, September 1991

Session chair, Symposium on Low Temperature Electronic Device Operation, Electrochemical Society Spring Meeting, Washington DC, May 1991 Member of the Program Committee of the Second International Conference on New Diamond Science and Technology, Washington, DC, September 1990