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January 2002
PWM Optimized
ISL9N308AP3/ISL9N308AS3ST
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 8m
General Description
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features
Fast switching rDS(ON) = 0.0064 (Typ), VGS = 10V rDS(ON) = 0.010 (Typ), VGS = 4.5V Qg (Typ) = 24nC, VGS = 5V Qgd (Typ) = 8nC CISS (Typ) = 2600pF
Applications
DC/DC converters
DRAIN (FLANGE)
GATE SOURCE
G DRAIN (FLANGE) S
ID
PD TJ, TSTG
Thermal Characteristics
RJC RJA RJA Thermal Resistance Junction to Case TO-220, TO-263 Thermal Resistance Junction to Ambient TO-220, TO-263 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 1.5 62 43
oC/W oC/W oC/W
ISL9N308AP3/ISL9N308AS3ST
Off Characteristics
BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V VDS = 25V VGS = 0V TC = 150o VGS = 20V 30 1 250 100 V A nA
On Characteristics
VGS(TH) rDS(ON) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250A ID = 75A, VGS = 10V ID = 48A, VGS = 4.5V 1 0.0064 0.010 3 0.008 0.012 V
Dynamic Characteristics
CISS COSS CRSS Qg(TOT) Qg(5) Qg(TH) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Total Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate to Drain Miller Charge (VGS = 4.5V) 15 67 35 32 122 100 ns ns ns ns ns ns VDS = 15V, VGS = 0V, f = 1MHz VGS = 0V to 10V VGS = 0V to 5V V = 15V DD VGS = 0V to 1V ID = 48A Ig = 1.0mA 2600 520 225 45 24 2.6 7 8 68 37 4.0 pF pF pF nC nC nC nC nC
Switching Characteristics
tON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time
Switching Characteristics
tON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time
ISL9N308AP3/ISL9N308AS3ST
Typical Characteristic
1.2 POWER DISSIPATION MULTIPLIER 80
0.8
0.6
40
VGS = 4.5V
0.4
20
0.2
PDM 0.1 t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-3 10-2 t, RECTANGULAR PULSE DURATION (s) 10-1 100 101
0.01 10-5
10-4
TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 VGS = 10V 175 - TC 150
VGS = 5V 100 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 50 10-5 10-4 10-3 10-2 t, PULSE WIDTH (s) 10-1 100 101
ISL9N308AP3/ISL9N308AS3ST
100
75
75 VGS = 3.5V 50 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 3V
50 TJ = 25oC
TJ = 175oC TJ = -55oC
25
25
ID = 50A 20
1.5
15 ID = 14A ID = 75A
1.0
10
VGS = 10V, ID = 75A 5 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) 0.5 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC)
1.0
1.1
0.8
1.0
0.6
0.4 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC)
ISL9N308AP3/ISL9N308AS3ST
VGS = 0V, f = 1MHz 100 0.1 1 10 30 VDS , DRAIN TO SOURCE VOLTAGE (V) 0 0 10
200 SWITCHING TIME (ns) SWITCHING TIME (ns) tr 150 td(OFF) 100 tf 250 td(OFF) 200 150 100 tr 50 0 0 10 20 30 40 50 RGS, GATE TO SOURCE RESISTANCE () 0 0 10 20 30 40 RGS, GATE TO SOURCE RESISTANCE () td(ON) 50
tf
td(ON) 50
BVDSS
VDS VDD
+
VDD
IAS 0.01
0 tAV
ISL9N308AP3/ISL9N308AS3ST
VDS RL
VDD VDS
Qg(TOT)
VGS = 10V VGS Qg(5) VDD DUT Ig(REF) 0 VGS VGS = 1V Qg(TH) Qgs Ig(REF) 0 Qgd VGS = 5V
VDS
VGS
VDD DUT 0
10%
10%
RGS
VGS
10%
ISL9N308AP3/ISL9N308AS3ST
(EQ. 1)
In using surface mount devices such as the TO-263 package, the environment in which it is applied will have a significant influence on the parts current and maximum power dissipation ratings. Precise determination of PDM is complex and influenced by many factors: 1. Mounting pad area onto which the device is attached and whether there is copper on one side or both sides of the board. 2. The number of copper layers and the thickness of the board. 3. The use of external heat sinks. 4. The use of thermal vias. 5. Air flow and board orientation. 6. For non steady state applications, the pulse width, the duty cycle and the transient thermal response of the part, the board and the environment they are in. Fairchild provides thermal information to assist the designers preliminary application evaluation. Figure 21 defines the RJA for the device as a function of the top copper (component side) area. This is for a horizontally positioned FR-4 board with 1oz copper after 1000 seconds of steady state power with no air flow. This graph provides the necessary information for calculation of the steady state junction temperature or power dissipation. Pulse applications can be evaluated using the Fairchild device Spice thermal model or manually utilizing the normalized maximum transient thermal impedance curve. Displayed on the curve are RJA values listed in the Electrical Specifications table. The points were chosen to depict the compromise between the copper board area, the thermal resistance and ultimately the power dissipation, PDM. Thermal resistances corresponding to other copper areas can be obtained from Figure 21 or by calculation using Equation 2. RJA is defined as the natural log of the area times a coefficient added to a constant. The area, in square inches is the top copper area including the gate and source pads. R JA = 26.51 + -------------------------------------
(EQ. 2)
ISL9N308AP3/ISL9N308AS3ST
rev Dec2000
RSLC2
MMED 16 6 8 8 MMEDMOD MSTRO 16 6 8 8 MSTROMOD MWEAK 16 21 8 8 MWEAKMOD RBREAK 17 18 RBREAKMOD 1 RDRAIN 50 16 RDRAINMOD 2.5e-3 RGATE 9 20 3.4 RLDRAIN 2 5 10 RLGATE 1 9 45.8 RLSOURCE 3 7 14.7 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 RSOURCE 8 7 RSOURCEMOD 2.55e-3 RVTHRES 22 8 RVTHRESMOD 1 RVTEMP 18 19 RVTEMPMOD 1 S1A S1B S2A S2B 6 12 13 8 S1AMOD 13 12 13 8 S1BMOD 6 15 14 13 S2AMOD 13 15 14 13 S2BMOD
VBAT 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*200),5))} .MODEL DBODYMOD D (IS = 1.9e-11 N = 1.075 RS = 4.2e-3 TRS1 = 9e-4 TRS2 = 1e-6 XTI = 2.2 CJO = 1.1e-9 TT = 8e-11 M = 0.49) .MODEL DBREAKMOD D (RS = 1.7e-1 TRS1 = 1e-3 TRS2 = -8.9e-6) .MODEL DPLCAPMOD D (CJO = 8.2e-10 IS = 1e-30 N = 10 M = 0.45) .MODEL MMEDMOD NMOS (VTO = 1.9 KP = 3 IS=1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 3.4) .MODEL MSTROMOD NMOS (VTO = 2.35KP = 90 IS = 1e-30 N= 10 TOX = 1 L = 1u W = 1u) .MODEL MWEAKMOD NMOS (VTO = 1.6 KP = 0.05 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 34 RS = 0.1) .MODEL RBREAKMOD RES (TC1 = 1e-3 TC2 = -7e-7) .MODEL RDRAINMOD RES (TC1 = 7e-3 TC2 = 1e-5) .MODEL RSLCMOD RES (TC1 = 1e-3 TC2 = 1e-6) .MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6) .MODEL RVTHRESMOD RES (TC1 = -2.7e-3 TC2 = -1e-5) .MODEL RVTEMPMOD RES (TC1 = -1.8e-3 TC2 = 1e-6) .MODEL S1AMOD VSWITCH (RON = 1e-5 .MODEL S1BMOD VSWITCH (RON = 1e-5 .MODEL S2AMOD VSWITCH (RON = 1e-5 .MODEL S2BMOD VSWITCH (RON = 1e-5 .ENDS For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. ROFF = 0.1 ROFF = 0.1 ROFF = 0.1 ROFF = 0.1 VON = -4.0 VOFF= -0.8) VON = -0.8 VOFF= -4.0) VON = -0.3 VOFF= 0.2) VON = 0.2 VOFF= -0.3)
ISL9N308AP3/ISL9N308AS3ST
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u res.rbreak n17 n18 = 1, tc1 = 1e-3, tc2 = -7e-7 res.rdrain n50 n16 = 2.5e-3, tc1 = 7e-3, tc2 = 1e-5 res.rgate n9 n20 = 3.4 res.rldrain n2 n5 = 10 res.rlgate n1 n9 = 45.8 res.rlsource n3 n7 = 14.7 res.rslc1 n5 n51= 1e-6, tc1 = 1e-3, tc2 = 1e-6 res.rslc2 n5 n50 = 1e3 res.rsource n8 n7 = 2.55e-3, tc1 = 1e-3, tc2 = 1e-6 res.rvtemp n18 n19 = 1, tc1 = -1.8e-3, tc2 = 1e-6 res.rvthres n22 n8 = 1, tc1 = -2.7e-3, tc2 = -1e-5 spe.ebreak n11 n7 n17 n18 = 32.7 spe.eds n14 n8 n5 n8 = 1 spe.egs n13 n8 n6 n8 = 1 spe.esg n6 n10 n6 n8 = 1 spe.evtemp n20 n6 n18 n22 = 1 spe.evthres n6 n21 n19 n8 = 1 sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod v.vbat n22 n19 = dc=1
S1A 12 13 8 S1B CA 13 + EGS 6 8 S2A 14 13 S2B
SOURCE 3
RSOURCE RBREAK 17
15
CB + EDS 5 8
19 14 IT VBAT + 8 RVTHRES 22
ISL9N308AP3/ISL9N308AS3ST
th
JUNCTION
RTHERM1
CTHERM1
RTHERM2
CTHERM2
RTHERM4
CTHERM4
RTHERM5
CTHERM5
RTHERM6
CTHERM6
tl
CASE
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOSTM EnSignaTM FACT FACT Quiet Series
DISCLAIMER
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SMART START STAR*POWER Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation UHC UltraFET
VCX
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Full Production
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Rev. H4