Application Note-RFG1M09180 865MHz To 895MHz 48V 400Wpk Doherty Reference Design

AN RFMD APPLICATION NOTE
Application Note
RFG1M09180, 865MHz to 895MHz, 48V, 400Wpk Doherty Reference Design
Abstract
This application note is a reference point for an amplifier circuit design using RFMDs RFG1M09180 in a Symmetrical Doherty configuration using two RFG1M09180 devices. The frequency of operation is optimized for the 869MHz to 895MHz frequency range. The operating drain voltage is 48VDC at an output power of +50dBm, with >17dB gain, and >50% drain efficiency. The RFG1M09180 is optimized for commercial infrastructure applications in the 700MHz to 1000MHz frequency band, ideal for WCDMA and LTE applications. Using an advanced 48V high power density Gallium Nitride (GaN) semiconductor process optimized for high peak to average ratio applications, these highperformance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. The RFG1M09180 is an input pre-matched GaN transistor packaged in an air cavity ceramic package, which provides excellent thermal stability. Ease of integration is accomplished through the incorporation of simple optimized matching networks external to the package that provide wideband gain, efficiency, and linearizable performance in a single amplifier.
Introduction
The reference design circuit described in this document was designed to achieve a maximum back-off efficiency and linearity through trade-offs between output power, gain, distortion, and efficiency. All recommended components are standard values available from well-known manufacturers. Components specified in the bill of materials (BOM) have known parasitics, which may affect the circuits performance. Deviating from the recommended BOM or design layout may result in a performance shift due to different parasitics, line impedances, and line lengths. Component placement, line impedances, and line lengths are critical to each circuits performance.
Circuit Details
The circuit recommended for this application note was designed using the following PCB material: Material: Taconic, RF-60A Core thickness: 0.025 inch Copper cladding: 1.0oz with plating Dielectric constant: 6.15 at 10GHz Dissipation Factor: 0.0038 at 10GHz http://www.taconic-add.com/en--index.php http://www.taconic-add.com/pdf/rf60a.pdf A 0.25 thick copper plate interface was used between device flange and aluminum heat sink. Aluminum heat sink is Cool Innovations dense pin configuration #3-505017R http://www.coolinnovations.com/ http://www.coolinnovations.com/includes/pdf/heatsinks/3-5050XXR.pdf
RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. 2013, RF Micro Devices, Inc.
AN130410
7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical Support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com
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AN RFMD D APPLICA ATION NOTE E
Design Background B Information

As system ms move to complex modulations, am mplifier design ns are requir red to handle e the peak power requireme ents in order to t keep nonlinearity levels at a minimu um. One tradiitional straight tforward meth hod to combat no onlinearity is to design an n amplifier us sing the large est power tra ansistor availa able. As the power transistor size reaches a maximum, adding additio onal transistor rs in parallel (in a balanced d configuratio on) will increase the peak powe er capability. The T issue bec comes average e power (back k-off) efficienc cy. Even thoug gh the balanced amplifier is de esigned and tuned for peak k power and e efficiency, the e efficiency at the average power c wavef forms is much h less. The Do oherty amplifie er design impr roves the aver rage power ba ack-off levels in complex efficiency without a majo or degradation n in RF perform mance. erty amplifier transistors t are e biased differ rently from th heir balanced amplifier coun nterparts. Typ pically, The Dohe balanced amplifiers a are biased equally, so they tur rn on and ope erate in unison n. The Dohert ty amplifier ha as one transistor that operates s as the carrie er (or main) amplifier and one or more e transistors t that operate a as the peaking amplifier. a For this t reference e design, the carrier amplif fier transistor is biased in c class AB, so it can amplify the e incoming sig gnal under all levels of power. The peakin ng amplifier is s biased in cla ass C, therefor re, will only amplify signals wh hen they reach h a large enough level (the e peaks) to tu urn on the gat te. Also, the d design rrier amplifier while w the peaking amplifier r is turned off f incorporates s quarterwave e lines configuration of the car hing structures s effectively sh hifting the load d impedance t to a state that t increases the e efficiency at lower and match power leve els. In a Dohe erty amplifier, the t efficiency and linearity t trade-off can be shifted eas sily by changin ng the amount of f bias voltage applied a to the gate of the ca arrier and peak king amplifier. wing informat tion describes s the fundam mental differe nces between traditional balanced am mplifier The follow configuration and the Do oherty configu uration. Additio onal informatio on on Doherty y amplifier des sign can be fou und at w.rfmd.com/cs/ /documents/C CommDRunton nPASymposium m11.pdf http://www xplore.ieee.org/xpl/login.jsp?tp=&arnumber=5616135& &url=http%3A% %2F%2Fieeex xplore.ieee.org g%2Fi http://ieeex el5%2F5606055%2F5614756%2F056 616135.pdf%3 3Farnumber% %3D5616135 http://www w.home.agilent t.com/upload/c cmc_upload/A All/7March2013 3Webcast.pdf f?&cc=US&lc= =eng
TRADITION NAL AMPLIFIER:
Good for High H power op peration Both amplifier A1 and A2 A contribute equally e to POUT T ciency versus POUT characte eristics Both have standard Effic
SYMMETRICAL DOHERTY Y AMPLIFIER:
Good for 3 to 7dB Back-off operation A1 and A2 2 operate independently whe en needed
RF MICRO DEVICES S and RFMD are trademarks of RFMD D, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade e names, trademarks, and registered tra ademarks are the property of their resp pective owners. 2013, RF Micro Devic ces, Inc.
AN13 30410
7628 Thorndike Road, Gree ensboro, NC 27409 9-9421 For sales o or technical Support t, contact RFMD at (+1) 336-678-5570 or customerservice e@rfmd.com
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A1 operate es most of the e time - handle es average sig gnal A2 operate es only when peak power is s needed
ed carrier pow wer by 3dB Load Modulation droppe es the efficienc cy enhanceme ent point back This move Even more e suitable for CDMA C type sig gnals
ASYMMETR RICAL DOHERT TY AMPLIFIER:
Good for 7dB 7 to 10dB back-off operat tion Change th he ratio of the carrier/peaking amplifier pow wer Equal pow wer creates ma aximum efficie ency at -6dB Size the ca arrier amplifier smaller to ef ffectively move e the maximum m efficiency po oint lower in average power r, suitable fo or higher peak to average ra atio signals
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Typical Performa ance

RFG1M09180, 865 5MHz to 895MHz, 48V, , 400Wpk S Symmetrical Doherty Re eference De esign
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Sc chematic
RFG1M09180, 865 5MHz to 895MHz, 48V, 400Wpk S Symmetrical Doherty Re eference De esign
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Bill of o Materia als

RFG1M09180, 865 5MHz to 895MHz, 48V, 400Wpk S Symmetrical Doherty Re eference De esign
Component C1-C4 C5-C6 C7-C12 C13-C14 C15-C20 C21-C26 C27-C28 C29-C30 R1-R2 R3-R4 X1 Value 100pF 8.2pF 56pF 6.8pF 4.7F 0.1F 100F 330F 100 10 90 Hybrid H Coupler Manufa acturer ATC C ATC C ATC C ATC C Mura ata Mura ata Panas sonic Panas sonic Panas sonic Panas sonic Anar ren Part Num mber ATC800A1 101JT ATC800A8 8R2CT ATC100B5 560JT ATC100B6 6R8CT GRM55ER72A475KA01L GRM32NR72A A104KA01L ECE-V1HA1 101UP EEU-FC2A A331 ERJ-1TYJ1 101U ERJ-8GEYJ J100V XC0900L L-03S
Photo
RFG1M09180, 865 5MHz to 895MHz, 48V, , 400Wpk S Symmetrical Doherty Re eference De esign
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AN RFMD APPLICATION NOTE
Parts Layout
RFG1M09180, 865MHz to 895MHz, 48V, 400Wpk Symmetrical Doherty Reference Design
RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. 2013, RF Micro Devices, Inc.
AN130410
7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical Support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com
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Thermal Managemen nt
As with mo ost power amp plifiers, the circuit must have e adequate the ermal manage ement in order r to operate effectively and reliably. Therefore, T an external fan and a thermal co ompound betw ween flange of f the device an nd a recommen nded. heat sink are
Mounting g Instruction ns
STEPS FOR R MOUNTING A FLANGED DEV VICE 1. Heat-sink H surface flatness control. a. Surface finish = average deviation d of the mean m value of the e surface height. b. Surface roughness (Ra) = 0.8m ( 0.03mil ls) 2. A clean interface surface s on both th he heat-sink and flange. f 3. Device D mounting holes h need to be clean c and flat (no o burrs). 4. Apply A a thin and even layer of the ermal compound to t the surface of t the flange. 5. Place P the device, flange-side-down n, into the recess s of the PCB. 6. Attach A the device to the PBC/Heat-sink with the specified the screw a and washer assem mbly. (S SS #4-40 X captive SHCS and RND R Shim-bearing g. .178O.D. X .12 23 ID X .01 Thic k) 7. Use U a Two Step torque sequence: a. 1st step torque the screw w and washer on each e side = 0.5kg g.cm. b. 2nd step p torque the screw w and washer on each side = 6kg.c cm (+- 1kg.cm). Caution: excessive torque e may damage the e flanged device. 8. Solder S the device leads to the PCB. . ustry standard is to t use a Pb-free alloy a (typically SAC C305; 96.5%Sn, 3 3%Ag, 0.5%Cu) with a liquidus a. One indu tempera ature of 221C. b. Tempera ature at the device lead interface should s be <400C C (750F) for <10 0 seconds. c. Pre-tin th he leads to reduce any effects of g gold embrittlemen nt.
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Biasing instructions for f the RFG1 1M09180 Sy ymmetrical D Doherty

1. 2. 3. 4. 5. 6. 7. 8. Connect C RF cables at RFIN and RFO OUT Connect C ground to o the ground supp ply terminal, and ensure e that both t the VG and VD gr rounds are also co onnected to this g ground terminal Apply A -6.5V to VG_ _PEAK Apply A -5.5V to VG_ _CARRIER Apply A 48V to VG In ncrease VG_CARRIER until drain curren nt reaches 600mA A or desired bias point. Turn T on the RF inp put power Readjust R VG_PEAK fo or desired linearity y versus efficienc cy
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Application Note-RFG1M09180 865MHz To 895MHz 48V 400Wpk Doherty Reference Design

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Application Note-RFG1M09180 865MHz To 895MHz 48V 400Wpk Doherty Reference Design

Încărcat de

Drepturi de autor:

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AN RFMD APPLICATION NOTE

AN RFMD D APPLICA ATION NOTE E

Design Background B Information

TRADITION NAL AMPLIFIER:

SYMMETRICAL DOHERTY Y AMPLIFIER:

AN RFMD D APPLICA ATION NOTE E

ASYMMETR RICAL DOHERT TY AMPLIFIER:

AN RFMD D APPLICA ATION NOTE E

Typical Performa ance

AN RFMD D APPLICA ATION NOTE E

AN RFMD D APPLICA ATION NOTE E

Bill of o Materia als

AN RFMD APPLICATION NOTE

AN RFMD D APPLICA ATION NOTE E

AN RFMD D APPLICA ATION NOTE E

Biasing instructions for f the RFG1 1M09180 Sy ymmetrical D Doherty

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