SPW47N60C3 Cool MOS Power Transistor

Feature New revolutionary high voltage technology Worldwide best R DS(on) in TO 247 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances VDS @ Tjmax RDS(on) ID 650 0.07 47
P-TO247

V A

Type SPW47N60C3

Package P-TO247

Ordering Code Q67040-S4491

Marking 47N60C3

Maximum Ratings Parameter Continuous drain current TC = 25 C TC = 100 C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 10 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 20 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage static VGS Gate source voltage AC (f >1Hz) Power dissipation, TC = 25C Operating and storage temperature VGS Ptot T j , T stg 20 20 30 415 -55... +150 W C A V 1 I D puls EAS Symbol ID 47 30 141 1800 mJ Value Unit A

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SPW47N60C3
Maximum Ratings Parameter Drain Source voltage slope
V DS = 480 V, I D = 47 A, Tj = 125 C

Symbol dv/dt

Value 50

Unit V/ns

Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=20A breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS
ID=2700, VGS=V DS V DS=600V, VGS=0V, Tj=25C, Tj=150C

Symbol min. RthJC RthJA Tsold -

Values typ. max. 0.3 62 260

Unit K/W C

Values typ. 700 3 0.5 0.06 0.16 0.62 max. 3.9 600 2.1 -

Unit V

A 25 250 100 0.07 nA

Gate-source leakage current

I GSS

V GS=30V, VDS=0V V GS=10V, ID=30A, Tj=25C Tj=150C

Drain-source on-state resistance RDS(on)

Gate input resistance

RG

f=1MHz, open Drain

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SPW47N60C3
Electrical Characteristics , at Tj = 25 C, unless otherwise specified Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance, 3) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg
V DD=350V, ID=47A, V GS=0 to 10V V DD=350V, ID=47A

Symbol g fs Ciss Coss Crss

Conditions min.
V DS2*I D*RDS(on)max, ID=30A V GS=0V, V DS=25V, f=1MHz

Values typ. 40 6800 2200 145 193 412 18 27 111 8 max. 165 12 -

Unit S pF

Effective output capacitance, 2) Co(er)

V GS=0V, V DS=0V to 480V

pF

td(on) tr td(off) tf

V DD=380V, V GS=0/13V, ID=47A, RG =1.8, Tj=125

ns

24 121 252 5.5

320 -

nC

V(plateau) V DD=350V, ID=47A

1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 3C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS.

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SPW47N60C3
Electrical Characteristics , at Tj = 25 C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current Typical Transient Thermal Characteristics Symbol Thermal resistance Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.002689 0.005407 0.011 0.054 0.071 0.036 K/W Value typ. Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.001081 0.004021 0.005415 0.014 0.025 0.158 Ws/K Unit Symbol Value typ. Unit VSD t rr Q rr I rrm di rr/dt
VGS =0V, I F=IS VR =350V, IF=IS , diF/dt=100A/s

Symbol IS I SM

Conditions min.
TC=25C

Values typ. 1 580 23 73 900 max. 47 141 1.2 -

Unit A

V ns C A A/s

Tj P tot (t)

R th1

R th,n

T case

E xternal H eatsink

C th1

C th2

C th,n T am b

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SPW47N60C3
1 Power dissipation Ptot = f (TC)
500
SPW47N60C3

2 Safe operating area ID = f ( V DS ) parameter : D = 0 , T C=25C

10 3

W
400 350

A
10 2

Ptot

ID

300 250 200 150 100 50 0 0

10 1

10 0

10 -1

tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC

20

40

60

80

100

120

160

10 -2 0 10

10

10

TC

10 V VDS

3 Transient thermal impedance ZthJC = f (t p) parameter: D = tp/T

10
1

4 Typ. output characteristic ID = f (VDS); Tj=25C parameter: tp = 10 s, VGS

280
20V

K/W A
10 0 200 10 -1

7.5V

ZthJC

ID

7V

160
6.5V

10 -2

10

-3

D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse

120
6V

80

5.5V

40

5V 4.5V

10 -4 -7 10

10

-6

10

-5

10

-4

10

-3

10

-2

s tp

10

0 0

12

16

20

26 V VDS

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SPW47N60C3
5 Typ. output characteristic ID = f (VDS); Tj=150C parameter: tp = 10 s, VGS
160
20V

6 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150C, V GS

0.5

A
6.5V

4V

4.5V

5V

RDS(on)

120

0.4
5.5V

ID

100

6V

0.35

80

5.5V

0.3
6V

60

5V

0.25
6.5V 20V

40
4.5V

0.2

20

4V

0.15

0 0

12

16

20

26 V VDS

0.1 0

20

40

60

80

100

120

A 160 ID

7 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 47 A, VGS = 10 V

0.38
SPW47N60C3

8 Typ. transfer characteristics ID= f ( VGS ); V DS 2 x ID x RDS(on)max parameter: tp = 10 s

280

A
0.32

25C

RDS(on)

0.28

200

ID
160 120
150C

0.24 0.2 0.16 0.12 0.08 0.04 0 -60 98% typ

80

40

-20

20

60

100

180

0 0

Tj
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9 Typ. gate charge VGS = f (QGate ) parameter: ID = 47 A pulsed
16
V
SPW47N60C3

10 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 s

10 3
SPW47N60C3

12

VGS

0.2 VDS max 0.8 VDS max

10 2

IF
10 1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0

10

0 0

40

80 120 160 200 240 280 320 nC

400

0.4

0.8

1.2

1.6

2.4 V

QGate

VSD

11 Typ. drain current slope di/dt = f(R G), inductive load, Tj = 125C par.: VDS =380V, VGS=0/+13V, ID=47A
6000

12 Typ. switching time t = f (RG ), inductive load, T j=125C par.: V DS=380V, VGS=0/+13V, ID=47 A
10 3
td(off)

A/s

ns

di/dt

4000

10 2
tf td(on)

3000

di/dt(on) tr

t
2000 10 1 1000
di/dt(off)

0 0

10

12

14

16

RG

20

10 0 0

10

12

14

16

20 RG

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13 Typ. switching time t = f (ID), inductive load, T j=125C par.: VDS =380V, VGS=0/+13V, RG =1.8
10
3

14 Typ. drain source voltage slope dv/dt = f(RG), inductive load, Tj = 125C par.: V DS=380V, VGS=0/+13V, ID=47A
80
td(off)

ns

V/ns
dv/dt(off)

10 2
td(on)

60

dv/dt

50

10 1

tf

40

tr

30

10 0

20

dv/dt(on)

10 10 -1 0

10

20

30

A ID

50

0 0

10

12

14

16

20 RG

15 Typ. switching losses E = f (ID), inductive load, Tj=125C par.: VDS =380V, VGS=0/+13V, RG =1.8
0.4
*) Eon includes SDP06S60 diode commutation losses.

16 Typ. switching losses E = f(RG), inductive load, Tj=125C par.: V DS=380V, VGS=0/+13V, ID=47A
1.4
*) Eon includes SDP06S60 diode commutation losses.

mWs mWs
1

Eoff

E
0.8

Eoff

0.2 0.6
Eon* Eon*

0.1

0.4

0.2

0 0

10

20

30

A ID

50

0 0

10

12

14

16

20 RG

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17 Avalanche SOA IAR = f (tAR) par.: Tj 150 C
20

18 Avalanche energy EAS = f (Tj) par.: ID = 10 A, VDD = 50 V

1800

A
16 14

mJ

1400

EAS
-2 -1 0 1 2

IAR

1200 1000

12 10

800 8 6 4 2 0 -3 10
4

600 400 200 0 25

10

10

10

10

10

s 10 tAR

50

75

100

C Tj

150

19 Drain-source breakdown voltage V(BR)DSS = f (Tj)

720
SPW47N60C3

20 Avalanche power losses PAR = f (f ) parameter: E AR=1mJ

500

V(BR)DSS

680 660 640 620 200 600 580 560 540 -60 0 4 10
5 6

PAV
C

300

100

-20

20

60

100

180

10

Hz f

10

Tj
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SPW47N60C3
21 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz
10 5 30

22 Typ. Coss stored energy Eoss=f(VDS)

pF
Ciss

10 4

Eoss
10 3
Coss

20

15

10 10 2
Crss

10 1 0

100

200

300

400

600

0 0

100

200

300

400

600

VDS

VDS

23 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: V GS = VDS ; ID = 2.7 mA

4.25

V VGS(th)
max.

3.25
typ.

2.75
min.

2.25

1.75

1.25 -75 -50 -25

25

50

75 100 125

C Tj

175

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SPW47N60C3

Definition of diodes switching characteristics

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SPW47N60C3
P-TO-247-3-1
15.9 6.35 3.61 5.03 2.03

4.37

20.9

9.91

6.17

1.75

1.14 0.243 1.2 2 2.92 5.46

16

0.762 MAX. 2.4 +0.05

General tolerance unless otherwise specified: Leadframe parts: 0.05 Package parts: 0.12

41.22

2.97 x 0.127

5.94

20

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SPW47N60C3
Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Mnchen Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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