PD - 9.

1506

PRELIMINARY Ultra Low On-Resistance P-Channel Surface Mount (IRFR9024N) Straight Lead (IRFU9024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

IRFR/U9024N
HEXFET Power MOSFET
D

VDSS = -55V RDS(on) = 0.175

G S

ID = -11A

D -P a k T O -2 52 A A

I-P a k TO -2 5 1 A A

Absolute Maximum Ratings

Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Q Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche EnergyR Avalanche CurrentQ Repetitive Avalanche EnergyQ Peak Diode Recovery dv/dt S Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds

Max.
-11 -8 -44 38 0.30 20 62 -6.6 3.8 -10 -55 to + 150 300 (1.6mm from case )

Units
A W W/C V mJ A mJ V/ns C

Thermal Resistance
Parameter
RJC RJA RJA Junction-to-Case Junction-to-Ambient (PCB mount)** Junction-to-Ambient

Typ.

Max.
3.3 50 110

Units
C/W

6/26/97

IRFR/U9024N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/ TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -55 -2.0 2.5 Typ. -0.05 13 55 23 37 4.5 7.5 350 170 92 Max. Units Conditions V VGS = 0V, ID = -250A V/C Reference to 25C, ID = -1mA 0.175 VGS = -10V, ID = -6.6A T -4.0 V VDS = VGS, I D = -250A S VDS = -25V, ID = -7.2AV -25 VDS = -55V, VGS = 0V A -250 VDS = -44V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 19 ID = -7.2A 5.1 nC VDS = -44V 10 VGS = -10V, See Fig. 6 and 13 TV VDD = -28V ID = -7.2A ns RG = 24 RD = 3.7, See Fig. 10 TV D Between lead, 6mm (0.25in.) nH G from package and center of die contactU S VGS = 0V pF VDS = -25V = 1.0MHz, See Fig. 5V

Source-Drain Ratings and Characteristics

IS
ISM

V SD t rr Q rr ton

Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Q Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time

Min. Typ. Max. Units

Conditions D MOSFET symbol -11 showing the A G integral reverse -44 p-n junction diode. S -1.6 V TJ = 25C, IS = -7.2A, V GS = 0V T 47 71 ns TJ = 25C, IF = -7.2A 84 130 nC di/dt = 100A/s TV Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes: Q Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) R Starting TJ = 25C, L = 2.8mH RG = 25, IAS = -6.6A. (See Figure 12) S ISD -6.6A, di/dt 240A/s, VDD V (BR)DSS, TJ 150C

T Pulse width 300s; duty cycle 2%. UThis is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact

V Uses IRF9Z24N data and test conditions.

** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994

IRFR/U9024N
100
TOP

-I D , Drain-to-Source Current (A)

BOTTOM

-I D , Drain-to-Source Current (A)

VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V

100
TOP

10

BOTTOM

VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V

10

-4.5V

-4.5V
1

0.1 0.1

20s PULSE WIDTH TJ = 25 C

1 10 100 0.1 0.1 1

20s PULSE WIDTH TJ = 150 C

10 100

-VDS , Drain-to-Source Voltage (V)

-V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

100

2.5

R DS(on) , Drain-to-Source On Resistance (Normalized)

ID = -11A

-I D , Drain-to-Source Current (A)

2.0

TJ = 25 C
10

TJ = 150 C

1.5

1.0

0.5

0.1 4 5 6 7

V DS = -25V 20s PULSE WIDTH 8 9 10

0.0 -60 -40 -20

V GS = -10V
0 20 40 60 80 100 120 140 160

-VGS , Gate-to-Source Voltage (V)

TJ , Junction Temperature( C)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance Vs. Temperature

IRFR/U9024N
700 20

-V G S , G a te -to -S o u rc e V o lta g e (V )

600

V GS C is s C rs s C os s

= = = =

0V , f = 1MH z C gs + C g d , Cds SH OR TED Cgd C ds + C gd

I D = -7 .2A V DS = -44 V V DS = -28 V

16

C , C a p a c ita n c e (p F )

500

C is s C os s

12

400

300

200

C rs s

100

0 1 10 100

0 0 5 10

FOR TE ST C IR C U IT SE E FIG U R E 1 3
15 20 25

V D S , Drain-to-Source V oltage (V)

Q G , Total G ate C harge (nC)

Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage

100

1000

OPERATION IN THIS AREA LIMITED BY RDS(on)

-ISD , Reverse Drain Current (A)

-I I D , Drain Current (A)

TJ = 150 C
10

100 10us

TJ = 25 C

10

100us

1ms 1 10ms

0.1 0.2

VGS = 0 V
0.6 0.9 1.3 1.6

0.1 1

TC = 25 C TJ = 150 C Single Pulse

10 100

-VSD,Source-to-Drain Voltage (V)

-VDS, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 8. Maximum Safe Operating Area

IRFR/U9024N
12.0

VDS VGS

RD

D.U.T.
+

9.0

RG

-I D , Drain Current (A)

VDD

-10V
6.0
Pulse Width 1 s Duty Factor 0.1 %

Fig 10a. Switching Time Test Circuit

3.0
td(on) tr t d(off) tf

VGS 10%

0.0 25 50 75 100 125 150

90% VDS

T C , Case Temperature

( C)

Fig 9. Maximum Drain Current Vs. Case Temperature

10

Fig 10b. Switching Time Waveforms

Thermal Response (Z thJC )

D = 0.50 1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1

0.1

0.01 0.00001

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRFR/U9024N
VDS L

120
RG

D .U .T IA S D R IV E R
0 .0 1

- V V DD + DD
A

EAS , Single Pulse Avalanche Energy (mJ)

100

- 20V tp

ID -3.0A -4.2A BOTTOM -6.6A TOP

80

60

15V

40

Fig 12a. Unclamped Inductive Test Circuit

I AS

20

0 25 50 75 100 125 150

Starting T J, Junction Temperature

( C)

tp V(BR)DSS

Fig 12c. Maximum Avalanche Energy Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Current Regulator Same Type as D.U.T.

50K

QG

12V

.2F

-10V
QGS VG QGD
VGS

.3F

D.U.T.

+VDS

-3mA

Charge

IG

ID

Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform

Fig 13b. Gate Charge Test Circuit

IRFR/U9024N
Peak Diode Recovery dv/dt Test Circuit
D.U.T*

S
+

Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer

R
-

Q
RG VGS dv/dt controlled by RG ISD controlled by Duty Factor "D" D.U.T. - Device Under Test

+ VDD

Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive P.W. Period D=

P.W. Period

[VGS=10V ] ***

D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt

[VDD]

Re-Applied Voltage Inductor Curent

Body Diode

Forward Drop

Ripple 5%

[ISD ]

*** V GS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS

IRFR/U9024N
Package Outline
TO-252AA Outline Dimensions are shown in millimeters (inches)
6.73 (.265) 6.35 (.250) -A5.46 (.215) 5.21 (.205) 4 6.45 (.245) 5.68 (.224) 6.22 (.245) 5.97 (.235) 1.02 (.040) 1.64 (.025) 1 2 3 0.51 (.020) MIN. 10.42 (.410) 9.40 (.370) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086)

1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018)

LEA D AS SIG NME NT S 1 - G AT E 2 - DRA IN 3 - S OUR CE 4 - DRA IN

-B 1.52 (.060) 1.15 (.045) 3X 2X 1.14 (.045) 0.76 (.030)

0.89 (.035) 0.64 (.025) 0.25 ( .010) M A M B NOT ES:

0.58 (.023) 0.46 (.018)

2.28 (.090) 4.57 (.180)

1 DIME NSIO NING & T OLE RANCING P ER A NSI Y 14.5M, 1982. 2 CO NTRO LLING DIMENS ION : INCH. 3 CO NFO RMS T O JEDE C O UTLINE TO -252AA . 4 DIME NSIO NS S HO W N ARE BEF O RE SO LD ER DIP , SO LDER DIP MA X. +0.16 (.006).

Part Marking Information

TO-252AA (D-Pak)

E X A M P LE : T H IS IS A N IR F R 120 W IT H A S S E MB L Y LOT C OD E 9U 1P

IN T E R N A T IO N A L R E CT IF IE R LO G O

IR F R 12 0 9U 1P

F IR S T P O R T ION OF P A R T N U MB E R

A S S E MB L Y L O T C OD E

S E C O N D P O R T ION OF PART NUMBER

IRFR/U9024N
Package Outline
TO-251AA Outline Dimensions are shown in millimeters (inches)
6.73 (.265) 6.35 (.250) -A5.46 (.215) 5.21 (.205) 4 6.45 (.245) 5.68 (.224) 1.52 ( .060) 1.15 ( .045) 1 -B 2.28 (.090) 1.91 (.075) 9.65 (.380) 8.89 (.350) 2 3 6.22 ( .245) 5.97 ( .235) 1.27 ( .050) 0.88 ( .035) 2.38 (.094) 2.19 (.086) 0.58 (.023) 0.46 (.018) LEAD AS SIG NMENT S 1 - G AT E 2 - DRA IN 3 - S OURCE 4 - DRA IN

NOT ES : 1 DIME NSIO NING & T OLE RANCING P ER A NSI Y14.5M, 1982. 2 CO NTRO LLIN G DIMENS ION : INCH. 3 CO NFO RMS TO J EDE C O UT LINE TO -252AA . 4 DIME NSIO NS SHOW N A RE BEF O RE SO LDER DIP , SO LDER DIP MA X. +0.16 (.006).

3X

1.14 (.045) 0.76 (.030)

3X

0.89 (.035) 0.64 (.025) M A M B

1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018)

2.28 (.090) 2X

0.25 (.010)

Part Marking Information

TO-251AA (I-Pak) E X A M P LE : TH IS IS A N IR F U1 20 W IT H A S S E M B LY LO T C O D E 9U 1P

IN TE RN A T IO N A L R E C T IF IE R LO GO

IR F U 120 9U 1P

F IR S T P O RT IO N O F P A R T N UM B E R

A S S E M B LY LO T C O D E

S E C O N D P O R T ION OF PART NUMBER

IRFR/U9024N
Tape & Reel Information
TO-252AA

TR

TRR

TRL

16 .3 ( .64 1 ) 15 .7 ( .61 9 )

1 6 .3 ( .6 4 1 ) 1 5 .7 ( .6 1 9 )

1 2 .1 ( .4 76 ) 1 1 .9 ( .4 69 )

F E E D D IR E C TIO N

8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 )

F E E D D IR E C TIO N

N O T ES : 1 . C O N T R O LL IN G D IM E N S IO N : M IL LIM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S ( IN C H E S ). 3 . O U T L IN E C O N FO R M S TO E IA -48 1 & E IA -5 4 1 .

1 3 IN C H

16 m m NO T ES : 1 . O U T L IN E C O N F O R M S T O E IA -4 8 1 .

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 6/97

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/