Integrated Circuits (ELE 564)

Dr. Mohamed Abdel- Hamid

Electronics & Communications Engineering Department

Course Description
Integrated-Circuit Active devices Integrated-Circuit Technology Multiple-Transistor Amplifiers Differential Amplifier Current- Mirrors Active loads and References Operational Amplifiers Frequency Response of Integrated Circuits Noise in Integrated Circuits
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References
P. Gray, P. Hurst and R. Meyer, Analysis and Design of Analog Integrated Circuits, 4th edition, John Wiley, 2001. B. Razavi, Design of Analog CMOS Integrated Circuits, McGraw-Hill, New York, 2001. A. Sedra and K. Smith, Microelectronic Circuits, 5th Edition, Oxford, 2004. Lecture notes
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Introduction
Yesterday and Today

Electronics before 1947

Vacuum Tube or Valve (1900)
- Cathode Vacuum + Anode Grid

Heater

By heating the negative electrode (cathode), electrons are emitted. These electrons travel along the vacuum tube, attracted by the positive electrode (anode) at the other end. A third electrode (Grid) controls the flow of electrons to the anode.

 Vacuum tubes were expensive, relatively large and consumes considerable amounts of power. Principal problem was with the reliability of the tubes. They suffered vacuum leaks which caused the devices to malfunction, and repeated heating of the cathode would eventually cause the valve to blow.

(Electronic Numeric Integrator And Calculator)

ENIAC (Electronic Numeric Integrator and Calculator) - contains about 18,000 vacuum valves - 1000 sq. feet (93 m2) of floor space - 30 tons - 150 KW - ~ 50 vacuum tubes/day
Suppose lifetime of the valve is 1 year (= 8640 hours = 518,400 minutes). Chances that in 1 minute, one tube would blow = 1/ 518,400. With 18,000 tubes, chances of one of them would blow = 18,000/ 518,400 = 0.035 tubes/min i.e. In one day, 50 tubes would blow (0.035 x 60 x 24 = 50)

Electronics after 1947

(The Starting of Solid State Electronics)

First point-contact Transistor, 1947 Bardeen, Brattain and Shockley

The first transistor was about half an inch high. That's mammoth by today's standards, when several hundred millions of transistors can fit on a single computer chip.

Nobel Prize, 1956

The Starting Point

Jack S. Kilby

Texas Instruments, Nobel Prize, 2000

 1961: TI and Fairchild introduce the first logic ICs. 1962: RCA develops the first MOS transistor
Fairchild bipolar RTL Flip-Flop RCA 16-transistor MOSFET IC

Computer-Aided Design
1967: Fairchild develops the Micromosaic IC using CAD Final Al Layer of interconnect could be customized for different applications.

Yesterday and Today

Vacuum tubes

Discrete transistors
Small scale Integrated (SSI) Medium scale Integrated (MSI) circuits

Very Large scale Integrated (VLSI) circuits

Moores Law

- Semiconductor devices shrink to the nano -scale - If current trend continues, it will reach molecular scale in two decades.

ITRS
What is the ITRS?
The International Technology Roadmap for Semiconductors (ITRS) is an assessment of the semiconductor technology requirements. The objective of the ITRS is to ensure advancements in the performance of integrated circuits. The ITRS identifies the technological challenges and needs facing the semiconductor industry over the next 15 years . It is sponsored by the European Semiconductor Industry Association (ESIA), the Japan Electronics and Information Technology Industries Association (JEITA), the Korean Semiconductor Industry Association (KSIA), the Semiconductor Industry Association (SIA), and Taiwan Semiconductor Industry Association (TSIA).

http://public.itrs.net/

Example: Solar-Powered Sensor System

A 9-cubic millimeter solar-powered sensor system developed at the university of Michigan is the smallest that can harvest energy from its surroundings.

Integrated Circuits

Integrated-Circuit Active devices

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Microelectronic Devices

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NPN

PNP

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For NMOS

For PMOS

The relations of NMOS are valid

k = Cox

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Metal Oxide Semiconductor FET

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Small-Signal Models of MOS Transistors

Transconductance Assuming square-law operation, the transconductance from the gate can be determined from

One of the key challenges in MOS analog circuit design is designing highquality analog circuits with a low transconductance to current ratio.

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Intrinsic Gate-Source and Gate-Drain Capacitance In the triode region of device operation, the channel exists continuously from source to drain, and the gate-channel capacitance is usually lumped into two equal parts at the drain and source with

In the saturation or active region, however, the channel pinches off before reaching the drain

Input Resistance The gate of an MOS transistor is insulated from the channel by the SiO2 dielectric. As a result, the low-frequency gate current is essentially zero and the input resistance is essentially infinite.
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Output Resistance

where VA is the Early voltage, is the channel-length modulation parameter, Basic Small-Signal Model of the MOS Transistor

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Body Transconductance The drain current is a function of both the gate-source and body-source voltages. On the one hand, the gate-source voltage controls the vertical electric field, which controls the channel conductivity and therefore the drain current. On the other hand, the body-source voltage changes the threshold, which changes the drain current when the gate-source voltage is fixed. This effect stems from the influence of the substrate acting as a second gate and is called the body effect.

Where is the bulk threshold parameter and F is the Fermi-potential (Chi)

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Parasitic Elements in the Small-Signal Model The elements of the small-signal model for MOS transistors described may be considered basic in the sense that they arise directly from essential processes in the device. However, technological limitations in the fabrication of the devices give rise to a number of parasitic elements that must be added to the equivalent circuit for most integrated-circuit transistors.

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 Capacitance Cgb between gate and body or substrate models parasitic oxide capacitance between the gate-contact material and the substrate outside the active-device area. This capacitance is independent of the gate-body voltage and models coupling from polysilicon and metal interconnects to the underlying substrate.
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MOS Transistor Frequency Response

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Example :

Solution

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