2SD970(K)

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Silicon NPN Triple Diffused

Application
Medium speed and power switching complementary pair with 2SB791(K)

Outline
TO-220AB

1 1. Base 2. Collector (Flange) 3. Emitter

2 3

2 k (Typ)

200 (Typ) 3

Absolute Maximum Ratings (Ta = 25C)

Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg
1

Ratings 120 120 7 8 12 40 150 55 to +150

Unit V V V A A W C C

2SD970(K)
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Electrical Characteristics (Ta = 25C)

Item Symbol Min 120 7 1000 Typ 0.4 5.4 1.1 Max 100 10 20000 1.5 3.0 2.0 3.5 V V V V s s s Unit V V A A Test conditions I C = 25 mA, RBE = I E = 50 mA, IC = 0 VCB = 120 V, IE = 0 VCE = 100 V, RBE = VCE = 3 V, IC = 4 A*1 I C = 4 A, IB = 8 mA*1 I C = 8 A, IB = 80 mA*1 I C = 4 A, IB = 8 mA*1 I C = 8 A, IB = 80 mA*1 I C = 4 A, IB1 = IB2 = 8 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Storage time Fall time Note: 1. Pulse test. hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 t on t stg tf

Maximum Collector Dissipation Curve 60 Collector power dissipation Pc (W) 30 iC (peak) Collector current IC (A) 10 3 1.0 0.3 0.1 0.03 0 50 100 Case temperature TC (C) 150 1

Area of Safe Operation 1 s

40

IC max (Continuous)

PW = 10 m s
era tio DC Op

10 0 s

1m s

20

n( TC 5 =2

Ta = 25C 1 shot pulse

3 10 30 100 300 1,000 Collector to emitter voltage VCE (V)

C)

2SD970(K)
www.DataSheet4U.com Typical Output Characteristics 10 TC = 25C DC Current Transfer Ratio vs. Collector Current 10,000 DC current transfer ratio hFE

PC

= 25

1.8 Collector current IC (A) 8 1.6 1.4

2.0

3,000
TC =

6
0.6 m A

1,000

C 75 C C 25 25

4 1.2 1.0 2 IB = 0 0 1 2 3 4 5 Collector to emitter voltage VCE (V) 0.8

VCE = 3 V 300

100 0.1

0.3 1.0 3 Collector current IC (A)

10

Collector to emitter saturation voltage VCE (sat) (V) Base to emitter saturation voltage VBE (sat) (V)

Saturation Voltage vs. Collector Current 10 5 lC/lB = 200 500 2 1.0 0.5 VCE (sat) lC/lB = 500 200 0.2 0.1 0.1 TC = 25C 0.2 0.5 1.0 2 5 Collector current IC (A) 10 VBE (sat) 10

Switching Time vs. Collector Current tstg 3 Switching time t (s) 1.0 0.3 0.1 0.03 0.01 0.1 Ta = 25C VCC = 30 V IC = 500 IB1 = 500 IB2 0.3 1.0 3 Collector current IC (A) 10 tf ton

2SD970(K)
www.DataSheet4U.com 10 Thermal resistance j-c (C/W) 1 to 1,000 s 3 1.0 0.3 0.1 TC = 25C 0.03 0.01 1 1 10 10 Time t 100 100 1,000 (s) 1,000 (ms) 1 to 1,000 ms Transient Thermal Resistance

Unit: mm

11.5 MAX www.DataSheet4U.com 2.79 0.2 10.16 0.2 9.5 8.0 3.6 -0.08
+0.1

4.44 0.2 1.26 0.15

6.4

+0.2 0.1

18.5 0.5

15.0 0.3

1.27

2.7 MAX 14.0 0.5 1.5 MAX

7.8 0.5

0.76 0.1

2.54 0.5

2.54 0.5

0.5 0.1

Hitachi Code JEDEC EIAJ Weight (reference value)

TO-220AB Conforms Conforms 1.8 g

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