TDA7560

4 x 45W QUAD BRIDGE CAR RADIO AMPLIFIER PLUS HSD

PRODUCT PREVIEW

SUPERIOR OUTPUT POWER CAPABILITY: 4 x 50W/4 MAX. 4 x 45W/4 EIAJ 4 x 30W/4 @ 14.4V, 1KHz, 10% 4 x 80W/2 MAX. 4 x 77W/2 EIAJ 4 x 55W/2 @ 14.4V, 1KHz, 10% EXCELLENT 2 DRIVING CAPABILITY HI-FI CLASS DISTORTION LOW OUTPUT NOISE ST-BY FUNCTION MUTE FUNCTION AUTOMUTE AT MIN. SUPPLY VOLTAGE DETECTION LOW EXTERNAL COMPONENT COUNT: INTERNALLY FIXED GAIN (26dB) NO EXTERNAL COMPENSATION NO BOOTSTRAP CAPACITORS ON BOARD 0.35A HIGH SIDE DRIVER PROTECTIONS: OUTPUT SHORT CIRCUIT TO GND, TO VS, ACROSS THE LOAD VERY INDUCTIVE LOADS OVERRATING CHIP TEMPERATURE WITH SOFT THERMAL LIMITER LOAD DUMP VOLTAGE BLOCK AND APPLICATION DIAGRAM
Vcc1 Vcc2

MULTIPOWER BCD TECHNOLOGY MOSFET OUTPUT POWER STAGE

FLEXIWATT25

ORDERING NUMBER: TDA7560

FORTUITOUS OPEN GND REVERSED BATTERY ESD DESCRIPTION The TDA7560 is a breakthrough BCD (Bipolar / CMOS / DMOS) technology class AB Audio Power Amplifier in Flexiwatt 25 package designed for high power car radio The fully complementary P-Channel/N-Channel output structure allows a rail to rail output voltage swing which, combined with high output current and minimised saturation losses sets new power references in the car-radio field, with unparalleled distortion performances.

470 F ST-BY

100nF

MUTE

HSD

HSD OUT1+

IN1 0.1F

OUT1PW-GND OUT2+

IN2 0.1F

OUT2PW-GND OUT3+

IN3 0.1F

OUT3PW-GND OUT4+

IN4 0.1F AC-GND 0.47F SVR 47F TAB S-GND

OUT4PW-GND

D94AU158B

November 1999
This is preliminary information on a new product now in development. Details are subject to change without notice.

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ABSOLUTE MAXIMUM RATINGS
Symbol VCC VCC (DC) VCC (pk) IO Operating Supply Voltage DC Supply Voltage Peak Supply Voltage (t = 50ms) Output Peak Current: Repetitive (Duty Cycle 10% at f = 10Hz) Non Repetitive (t = 100s) Power dissipation, (Tcase = 70C) Junction Temperature Storage Temperature Parameter Value 18 28 50 9 10 80 150 55 to 150 Unit V V V A A W C C

Ptot Tj Tstg

PIN CONNECTION (Top view)

25

V CC

AC-GND

P-GND3

V CC

P-GND2

P-GND1

P-GND4

S-GND

OUT3-

OUT2-

OUT1-

OUT2+

OUT1+

OUT3+

THERMAL DATA
Symbol Rth j-case Parameter Thermal Resistance Junction to Case Max. Value 1 Unit C/W

2/10

OUT4+

D94AU159A

OUT4-

ST-BY

MUTE

HSD

SVR

TAB

IN1

IN2

IN4

IN3

TDA7560
ELECTRICAL CHARACTERISTICS (VS = 13.2V; f = 1KHz; Rg = 600; RL = 4; Tamb = 25C; Refer to the test and application diagram, unless otherwise specified.)
Symbol Iq1 VOS dVOS Gv dGv Po Parameter Quiescent Current Output Offset Voltage During mute ON/OFF output offset voltage Voltage Gain Channel Gain Unbalance Output Power VS = VS = VS = VS = VS = VS = VS = VS = Po EIAJ Po max. THD eNo SVR fch Ri CT ISB Ipin4 VSB out VSB in AM VM out VM in VAM in EIAJ Output Power (*) Max. Output Power (*) Distortion Output Noise Supply Voltage Rejection High Cut-Off Frequency Input Impedance Cross Talk St-By Current Consumption St-by pin Current St-By Out Threshold Voltage St-By in Threshold Voltage Mute Attenuation Mute Out Threshold Voltage Mute In Threshold Voltage VS Automute Threshold f = 1KHz PO = 4W f = 10KHz PO = 4W VSt-By = 1.5V VSt-By = 1.5V to 3.5V (Amp: ON) (Amp: OFF) POref = 4W (Amp: Play) (Amp: Mute) (Amp: Mute) Att 80dB; POref = 4W (Amp: Play) Att < 0.1dB; PO = 0.5W VMUTE = 1.5V (Sourced Current) VMUTE = 3.5V 6.5 7 7.5 7 -5 12 8 18 18 80 3.5 1.5 90 3.5 1.5 13.2V; 13.2V; 14.4V; 14.4V; 13.2V; 13.2V; 14.4V; 14.4V; THD = 10% THD = 1% THD = 10% THD = 1% THD = 10%, 2 THD = 1%, 2 THD = 10%, 2 THD = 1%, 2 23 16 28 20 42 32 50 40 41 75 25 19 30 23 45 34 55 43 45 77 50 80 0.006 0.015 35 50 50 100 80 60 70 300 100 70 60 120 75 10 0.05 0.07 50 70 25 26 RL = Play Mode Test Condition Min. 120 Typ. 200 Max. 320 80 80 27 1 Unit mA mV mV dB dB W W W W W W W W W W W W % % V V dB KHz K dB dB A A V V dB V V V V A A

VS = 13.7V; R L = 4 VS = 13.7V; R L = 2 VS = 14.4V; R L = 4 VS = 14.4V; R L = 2 Po = 4W Po = 10W; RL = 2 A Weighted Bw = 20Hz to 20KHz f = 100Hz; Vr = 1Vrms PO = 0.5W

Ipin22

Muting Pin Current

HSD SECTION
Vdropout Iprot Dropout Voltage Current Limits IO = 0.35A; VS = 9 to 16V 400 0.25 0.6 800 V mA

(*) Saturated square wave output.

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TDA7560
Figure 1: Standard Test and Application Circuit

C8 0.1F

C7 2200F Vcc1-2 Vcc3-4 6 20 9 8 OUT1

R1 ST-BY 10K R2 MUTE 47K C1 IN1 0.1F IN2 C2 0.1F IN3 C3 0.1F IN4 C4 0.1F S-GND 14 13 16 C5 0.47F SVR C6 47F 10 15 12 11 C10 1F C9 1F 22 4

5 2 3 OUT2

17 18 19 OUT3

21 24 23 25 HSD 1 TAB
D95AU335B

OUT4

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Figure 2: P.C.B. and component layout of the figure 1 (1:1 scale) COMPONENTS & TOP COPPER LAYER

BOTTOM COPPER LAYER

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Figure 3. Quiescent current vs. supply voltage.
240 220 200 180 160 140 Id (mA)
Vi = 0 RL = 4 Ohm

Figure 4. Output power vs. supply voltage.

80 75 70 65 60 55 50 45 40 35 30 25 20 15 10 5 Po (W)
Po-max

RL=4 Ohm f= 1 KHz

THD=10 %

THD=1 %

10

12 Vs (V)

14

16

18

10

11

12

13 14 Vs (V)

15

16

17

18

Figure 5. Output power vs. supply voltage. Po(W) 130 120 Po-m ax 110 100 RL=2 Ohm 90 THD=10% f=1 KHz 80 70 60 50 THD=1 % 40 30 20 10 8 9 10 11 12 13 14 15 16 17 18 Vs (V) Figure 7. Distortion vs. output power
THD(%)
Vs=14.4 V

Figure 6. Distortion vs. output Power

THD(%) 10
Vs=14.4 V RL= 4 Ohm f = 10 KHz

0.1

0.01

f = 1 KHz

0.001 0.1

1 Po (W)

10

Figure 8. Distortion vs. frequency.

10 THD (%)

10

RL= 2 Ohm f = 10 KHz

Vs = 14.4 V RL =4 Ohm Po =4 W

0.1

0.1

0.01

f = 1 KHz

0.01

0.001 0.1
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Po (W)

10

0.001 10

100

f (Hz)

1000

10000

TDA7560
Figure 9. Distortion vs. frequency.
10 THD(%)
90 80

Figure 10. Crosstalk vs. frequency.

CROSST ALK(dB)

Vs =14.4 V RL= 2 Ohm Po= 8 W

70 60 50
RL= 4 Ohm Po= 4 W Rg= 600 Ohm

0.1
40 30

0.01

0.001 10

100

f (Hz)

1000

10000

20 10

100

f (Hz)

1000

10000

Figure 11. Supply voltage rejection vs. frequency. SVR(dB) 100

90 80 70 60 50 40 30 20 10 100 f (Hz) 1000 10000
Rg= 600 Ohm

Figure 12. Output attenuation vs. supply voltage.

OUT ATTN (dB) 0 -20 -40 -60 -80 -100 5 6 7 Vs (V) 8 9 10

RL= 4 Ohm Po= 4 W ref.

Vripple= 1 Vrms

Figure 13. Output noise vs. source resistance.

En (uV) 130 120 110 100 90 80 70 60 50 40 30 20

Figure 14. Power dissipation & efficiency vs. output power (sine-wave operation)
90 Ptot (W)
n Vs=13.2V RL=4 x 4 Ohm f= 1 KHz SINE

n (%)

90 80 70 60 50 40

Vs= 14.4V RL= 4 Ohm

80 70 60 50 40
22-22KHz lin.

30 20 10 0

Ptot

30 20 10

A wgtd

10

100 1000 Rg (Ohm)

10000

100000

0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Po (W)
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TDA7560
Figure 15. Power dissipation vs. ouput power (Music/Speech Simulation)
30 25 20 15 10 5 Ptot (W)
Vs= 13.2V RL=4 x 4 Ohm GAUSSIAN NOISE CLIP START

Figure 16. Power dissipation vs. output power (Music/Speech Simulation)

60 55 50 45 40 35 30 25 20 15 10 5 Ptot (W)
Vs= 13.2V RL= 4 x 2 Ohm GAUSSIAN NOISE

CLIP START

3 Po (W)

4 Po (W)

10

APPLICATION HINTS (ref. to the circuit of fig. 1) SVR Besides its contribution to the ripple rejection, the SVR capacitor governs the turn ON/OFF time sequence and, consequently, plays an essential role in the pop optimization during ON/OFF transients.To conveniently serve both needs, ITS MINIMUM RECOMMENDED VALUE IS 10F . INPUT STAGE The TDA7560s inputs are ground-compatible and can stand very high input signals ( 8Vpk) without any performances degradation. If the standard value for the input capacitors (0.1F) is adopted, the low frequency cut-off will amount to 16 Hz. STAND-BY AND MUTING STAND-BY and MUTING facilities are both CMOS-COMPATIBLE. If unused, a straight connection to Vs of their respective pins would be admissible. Conventional low-power transistors can

be employed to drive muting and stand-by pins in absence of true CMOS ports or microprocessors. R-C cells have always to be used in order to smooth down the transitions for preventing any audible transient noises. About the stand-by, the time constant to be assigned in order to obtain a virtually pop-free transition has to be slower than 2.5V/ms. HEATSINK DEFINITION Under normal usage (4 Ohm speakers) the heatsinks thermal requirements have to be deduced from fig. 15, which reports the simulated power dissipation when real music/speech programmes are played out. Noise with gaussiandistributed amplitude was employed for this simulation. Based on that, frequent clipping occurence (worst-case) will cause Pdiss = 26W. Assuming Tamb = 70C and TCHIP = 150 C as boundary conditions, the heatsinks thermal resistance should be approximately 2C/W. This would avoid any thermal shutdown occurence even after longterm and full-volume operation.

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DIM. A B C D E F (1) G G1 H (2) H1 H2 H3 L (2) L1 L2 (2) L3 L4 L5 M M1 N O R R1 R2 R3 R4 V V1 V2 V3 MIN. 4.45 1.80 0.75 0.37 0.80 23.75 28.90 mm TYP. 4.50 1.90 1.40 0.90 0.39 1.00 24.00 29.23 17.00 12.80 0.80 22.47 18.97 15.70 7.85 5 3.5 4.00 4.00 2.20 2 1.70 0.5 0.3 1.25 0.50 MAX. 4.65 2.00 1.05 0.42 0.57 1.20 24.25 29.30 MIN. 0.175 0.070 0.029 0.014 0.031 0.935 1.138 inch TYP. 0.177 0.074 0.055 0.035 0.015 0.040 0.945 1.150 0.669 0.503 0.031 0.884 0.747 0.618 0.309 0.197 0.138 0.157 0.157 0.086 0.079 0.067 0.02 0.12 0.049 0.019 MAX. 0.183 0.079 0.041 0.016 0.022 0.047 0.955 1.153

OUTLINE AND MECHANICAL DATA

22.07 18.57 15.50 7.70 3.70 3.60

22.87 19.37 15.90 7.95 4.30 4.40

0.869 0.731 0.610 0.303 0.145 0.142

0.904 0.762 0.626 0.313 0.169 0.173

5 (Typ.) 3 (Typ.) 20 (Typ.) 45 (Typ.)

Flexiwatt25

(1): dam-bar protusion not included (2): molding protusion included

V3 H3
O

H H1 H2 R3 R4 V1 A

L4

L2

R2 R L L1

L3

V1

V2 D R1 R1 E G V G1 F M B M1

R2 L5

R1

V
FLEX25ME

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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com

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