BZX55C...

Vishay Telefunken

Silicon Epitaxial Planar ZDiodes

Features
D D D D D
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances

Applications
Voltage stabilization

94 9367

Absolute Maximum Ratings

Tj = 25_C Parameter Power dissipation Zcurrent Junction temperature Storage temperature range Test Conditions l=4mm, TL=25C Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 175 65...+175 Unit mW mA C C

Maximum Thermal Resistance

Tj = 25_C Parameter Junction ambient Test Conditions l=4mm, TL=constant Symbol RthJA Value 300 Unit K/W

Electrical Characteristics
Tj = 25_C Parameter Forward voltage Test Conditions IF=200mA Type Symbol VF Min Typ Max 1.5 Unit V

Document Number 85605 Rev. 4, 01-Apr-99

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BZX55C...
Vishay Telefunken
Type BZX55C... 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 VZnom V 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 IZT mA 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 for VZT and rzjT V 1) W 2.28 to 2.56 < 85 2.5 to 2.9 < 85 2.8 to 3.2 < 85 3.1 to 3.5 < 85 3.4 to 3.8 < 85 3.7 to 4.1 < 85 4.0 to 4.6 < 75 4.4 to 5.0 < 60 4.8 to 5.4 < 35 5.2 to 6.0 <25 5.8 to 6.6 < 10 6.4 to 7.2 <8 7.0 to 7.9 <7 7.7 to 8.7 <7 8.5 to 9.6 < 10 9.4 to 10.6 < 15 10.4 to 11.6 < 20 11.4 to 12.7 < 20 12.4 to 14.1 < 26 13.8 to 15.6 < 30 15.3 to 17.1 < 40 16.8 to 19.1 < 50 18.8 to 21.2 < 55 20.8 to 23.3 < 55 22.8 to 25.6 < 80 25.1 to 28.9 < 80 28 to 32 < 80 31 to 35 < 80 34 to 38 < 80 37 to 41 < 90 40 to 46 < 90 44 to 50 < 110 48 to 54 < 125 52 to 60 < 135 58 to 66 < 150 64 to 72 < 200 70 to 79 < 250 rzjk at IZK W mA < 600 1 < 600 1 < 600 1 < 600 1 < 600 1 < 600 1 < 600 1 < 600 1 < 550 1 < 450 1 < 200 1 < 150 1 < 50 1 < 50 1 < 50 1 < 70 1 < 70 1 < 90 1 < 110 1 < 110 1 < 170 1 < 170 1 < 220 1 < 220 1 < 220 1 < 220 1 < 220 1 < 220 1 < 220 1 < 500 0.5 < 600 0.5 < 700 0.5 < 700 0.5 < 1000 0.5 < 1000 0.5 < 1000 0.5 < 1500 0.5 IR and IR at VR mA 2) V < 50 < 100 1 < 10 < 50 1 <4 < 40 1 <2 < 40 1 <2 < 40 1 <2 < 40 1 <1 < 20 1 < 0.5 < 10 1 < 0.1 <2 1 < 0.1 <2 1 < 0.1 <2 2 < 0.1 <2 3 < 0.1 <2 5 < 0.1 <2 6.2 < 0.1 <2 6.8 < 0.1 <2 7.5 < 0.1 <2 8.2 < 0.1 <2 9.1 < 0.1 <2 10 < 0.1 <2 11 < 0.1 <2 12 < 0.1 <2 13 < 0.1 <2 15 < 0.1 <2 16 < 0.1 <2 18 < 0.1 <2 20 < 0.1 <2 22 < 0.1 <2 24 < 0.1 <2 27 < 0.1 <5 30 < 0.1 <5 33 < 0.1 <5 36 < 0.1 < 10 39 < 0.1 < 10 43 < 0.1 < 10 47 < 0.1 < 10 51 < 0.1 < 10 56 TKVZ %/K 0.09 to 0.06 0.09 to 0.06 0.08 to 0.05 0.08 to 0.05 0.08 to 0.05 0.08 to 0.05 0.06 to 0.03 0.05 to +0.02 0.02 to +0.02 0.05 to +0.05 0.03 to 0.06 0.03 to 0.07 0.03 to 0.07 0.03 to 0.08 0.03 to 0.09 0.03 to 0.1 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12

mA

1) Tighter tolerances available on request: BZX55A... 1% of VZnom BZX55B... 2% of VZnom BZX55F... 3% of VZnom 2)

at Tj= 150C

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Document Number 85605 Rev. 4, 01-Apr-99

BZX55C...
Vishay Telefunken Characteristics (Tj = 25_C unless otherwise specified)
R thJA Therm. Resist. Junction / Ambient ( K/W ) 500 VZtn Relative Voltage Change 1.3 VZtn=VZt/VZ(25C) 1.2
TKVZ=10 104/K 8 6 104/K 104/K 104/K 104/K

400

300 l 200 100 TL=constant 0 0 5 10 15 20 l Lead Length ( mm ) l

1.1
4 2

1.0 0.9 0.8 60

0 2 104/K 4 104/K

60

120

180

240

95 9611

95 9599

Tj Junction Temperature ( C )

Figure 1. Thermal Resistance vs. Lead Length

600 Ptot Total Power Dissipation ( mW ) 500 400 300 200 100 0 0
95 9602

Figure 4. Typical Change of Working Voltage vs. Junction Temperature

TK VZ Temperature Coefficient of VZ ( 10 4 /K ) 15

10

5 IZ=5mA 0

40

80

120

160

200

Tamb Ambient Temperature ( C )

5 0 10 20 30 40 50 VZ Z-Voltage ( V )

Figure 2. Total Power Dissipation vs. Ambient Temperature

1000

95 9600

Figure 5. Temperature Coefficient of Vz vs. ZVoltage

200

Voltage Change ( mV )

C D Diode Capacitance ( pF )

Tj = 25C 100

150 VR = 2V 100 Tj = 25C

IZ=5mA 10

DVZ

50

1 0
95 9598

10

15

20

25
95 9601

0 0 5 10 15 20 25 VZ Z-Voltage ( V )

VZ Z-Voltage ( V )

Figure 3. Typical Change of Working Voltage under Operating Conditions at Tamb=25C

Figure 6. Diode Capacitance vs. ZVoltage

Document Number 85605 Rev. 4, 01-Apr-99

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BZX55C...
Vishay Telefunken
100 IF Forward Current ( mA ) 50 Ptot=500mW Tamb=25C

Tj = 25C 1

IZ Z-Current ( mA ) 1.0
95 9607

10

40

30

0.1 0.01 0.001 0 0.2 0.4 0.6 0.8

20 10 0 15 20 25 30 35

95 9605

VF Forward Voltage ( V )

VZ Z-Voltage ( V )

Figure 7. Forward Current vs. Forward Voltage

100 r Z Differential Z-Resistance ( W ) 1000

Figure 9. ZCurrent vs. ZVoltage

IZ Z-Current ( mA )

80 Ptot=500mW Tamb=25C 60

IZ=1mA 100

5mA 10 10mA

40 20 0 0 4 8 12 16 20

1 0
95 9606

Tj = 25C 5 10 15 20 25

95 9604

VZ Z-Voltage ( V )

VZ Z-Voltage ( V )

Figure 8. ZCurrent vs. ZVoltage

Z thp Thermal Resistance for Pulse Cond. (K/W) 1000

Figure 10. Differential ZResistance vs. ZVoltage

tp/T=0.5 100 tp/T=0.2 Single Pulse 10 tp/T=0.1 tp/T=0.05 1 101 tp/T=0.02 iZM=(VZ+(VZ2+4rzj tp/T=0.01

DT=TjmaxTamb

RthJA=300K/W

DT/Zthp)1/2)/(2rzj)

100

101 tp Pulse Length ( ms )

102

95 9603

Figure 11. Thermal Response

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Document Number 85605 Rev. 4, 01-Apr-99

BZX55C...
Vishay Telefunken Dimensions in mm
Cathode Identification 0.55 max.
technical drawings according to DIN specifications 94 9366

1.7 max.

Standard Glass Case 54 A 2 DIN 41880 JEDEC DO 35 Weight max. 0.3 g

26 min.

3.9 max.

26 min.

Document Number 85605 Rev. 4, 01-Apr-99

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BZX55C...
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

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Document Number 85605 Rev. 4, 01-Apr-99