Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 1
By D. A. Neamen
Exercise Solutions
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Chapter 1
Exercise Solutions
EX1.1
Eg
ni = BT 3 / 2 exp

2kT

GaAs: ni = ( 2.1 1014 ) ( 300 )

1.4
or ni = 1.8 106 cm 3
exp

6
2 ( 86 10 ) ( 300 )

3/ 2

0.66
or ni = 2.40 1013 cm 3
exp
6

(
)
2
86
10
300

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Ge: n i = 1.66 1015 (300)

3/ 2

EX1.2
(a) (i)

n o = N d = 21016 cm

n i2
1.5 1010
=
no
2 1016

po =

(ii) p o = N a = 1015 cm

no = N d = 2 1016 cm

ni2
1.8 10 6
=
no
2 1016

po =

(ii)

= 1.125 10 4 cm 3

n2
1.5 10 10
no = i =
po
1015

(b) (i)

p o = N a = 1015 cm

= 2.25 10 5 cm 3
3

= 1.62 10 4 cm 3

n i2
1.8 10 6
=
= 3.24 10 3 cm 3
po
10 15
______________________________________________________________________________________
no =

EX1.3
(a) For n-type;

=
(b) J =

1
1
=
= 0.046 ohm-cm
19
e n N d
1.6 10 (6800) 2 1016

= J = (0.046)(175) = 8.04 V/cm

--------------------------------------------------------------------------------------------------------------------------------EX1.4
Diffusion current density due to holes:
dp
J p = eD p
dx
1
x
= eD p (1016 ) exp
L
L
p
p

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 1
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
(a) At x = 0

(1.6 10 ) (10) (10 ) = 16 A / cm

=
19

Jp

(b) At x = 103

16

103
cm

103
J p = 16 exp 3 = 5.89 A / cm 2
10
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EX1.5

( )( )
(
)
(10 )(10 )
= (0.026 ) ln
= 0.374 V
(2.4 10 )

10 16 10 17
(a) Vbi = (0.026 ) ln
= 1.23 V
6 2
1.8 10
16

(b) Vbi

17

13 2

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EX1.6
1/ 2

V
C j = C jo 1 + R
Vbi
and
N N
Vbi = VT ln a 2 d
ni

(1017 )(1016 )
= 0.757 V
= ( 0.026 ) ln
(1.5 1010 )2

Then 0.8 = C jo 1 +

0.757
or
C jo = 2.21 pF

1/ 2

= C jo ( 7.61)

1/ 2

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EX1.7
I
(a) V D = VT ln D
IS
50 10 6
(i) V D = (0.026) ln
14
2 10

= 0.563 V

10 3
(ii) V D = (0.026 ) ln
14
2 10

= 0.641 V

50 10 6
(b) (i) V D = (0.026) ln
12
2 10

= 0.443 V

10 3
= 0.521 V
(ii) V D = (0.026 ) ln
12
2 10
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Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 1
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
EX1.8
V
VPS = I D R + VD and I D I S exp D
VT
( 4 VD )
so 4 = I D ( 4 103 ) + VD I D =
4 103
and
V
I D = (10 12 ) exp D
0.026
By trial and error, we find I D 0.866 mA and V D 0.535 V.
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EX1.9

V PS V

8 0.7
R=
= 6.08 k
R
1.20
4 0. 7
(b) I D =
= 0.9429 mA
3. 5
PD = I DV D = (0.9429 )(0.7 ) = 0.66 mW
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ID =

(a)

EX1.10
PSpice Analysis
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EX1.11
8 0.7
= 0.365 mA
20
V
0.026
71.2
rd = T =
I D 0.365

(a) I D =

0.25 sin t
12.5 sin t ( A)
20 + 0.0712
8 0 .7
(b) I D =
= 0.73 mA
10
0.026
rd =
35.6
0.73
0.25 sin t
id =
24.9 sin t ( A)
10 + 0.0356
______________________________________________________________________________________
id =

EX1.12
I
1.2 103
or VD = 0.6871 V
For the pn junction diode, VD VT ln D = ( 0.026 ) ln
15
4 10
IS
The Schottky diode voltage will be smaller, so VD = 0.6871 0.265 = 0.4221 V
V
Now I D I S exp D
VT

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 1
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
or

1.2 103
I S = 1.07 1010 A
0.4221
exp

0.026
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IS =

EX1.13
P = I VZ 10 = I ( 5.6 ) I = 1.79 mA
10 5.6
= 1.79 R = 2.46 k
R
______________________________________________________________________________________

Also I =

Test Your Understanding Solutions

TYU1.1
(a) T = 400K
Eg
Si: ni = BT 3 / 2 exp

2kT
ni = ( 5.23 1015 ) ( 400 )

3/ 2

1.1

exp
6
2 ( 86 10 ) ( 400 )

or
ni = 4.76 1012 cm 3

Ge: ni = (1.66 1015 ) ( 400 )

3/ 2

0.66

exp
2 ( 86 106 ) ( 400 )

or
ni = 9.06 1014 cm 3
GaAs:

ni = ( 2.1 1014 ) ( 400 )

3/ 2

1.4

exp
6
2 ( 86 10 ) ( 400 )

or
ni = 2.44 109 cm 3
(b) T = 250 K

Si: ni = ( 5.23 1015 ) ( 250 )

3/ 2

1.1

exp
2 ( 86 106 ) ( 250 )

or
ni = 1.61 108 cm 3

Ge: ni = (1.66 1015 ) ( 250 )

or
ni = 1.42 1012 cm 3

3/ 2

0.66

exp
6
2 ( 86 10 ) ( 250 )

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 1
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
GaAs: ni = ( 2.10 1014 ) ( 250 )

3/ 2

1.4

exp
2 ( 86 106 ) ( 250 )

or
ni = 6.02 103 cm 3
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TYU1.2

(a) = e p N a = 1.6 10 19 (480) 2 10 15 = 0.154 (ohm-cm)

1
= 6.51 -cm
0.1536

(b) = e n N d = 1.6 10 19 (1350) 2 1017 = 43.2 (ohm-cm)

1
= 0.0231 -cm
43.2

________________________________________________________________________
TYU1.3
(a) J = = (0.154)(4) = 0.616 A/cm 2

(b) J = = (43.2)(4) = 172.8 A/cm 2

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TYU1.4

(a)

J n = eDn

1015 1016
dn
n
so J n = 1.6 1019 ( 35 )
= eDn
4
dx
x
0 2.5 10

or
J n = 202 A / cm 2

(b)

J p = eD p

1014 5 1015
dp
p
so J p = 1.6 1019 (12.5 )
= eD p
4
dx
x
0 4 10

or

J p = 24.5 A / cm2
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TYU1.5
(a) no = N d = 8 1015 cm 3
10
ni2 (1.5 10 )
po =
=
= 2.81 10 4 cm 3
no
8 1015
2

(b) n = no + n = 8 1015 + 0.1 1015

or
n = 8.11015 cm3
p = po + p = 2.81 10 4 + 1014
or
p 1014 cm 3
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Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 1
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
TYU1.6

( )(
(

10 15 5 10 16

= (0.026 ) ln
= 0.679 V
2

1.5 10 10

10 15 5 10 16
(b) Vbi = (0.026 ) ln
= 1.15 V
2
1.8 10 6

10 15 5 10 16
(c) Vbi = (0.026 ) ln
= 0.296 V
2
2.4 10 13

______________________________________________________________________________________
N N
(a) Vbi = VT ln a 2 d
ni

( )(
(
( )(
(

TYU1.7
V
(a) (i) I D = I S exp D
VT

(ii) I D = 10 16

0.55
= 10 16 exp
0.154 A
0.026

0.65
exp
7.20 A
0.026

0.75
(ii) I D = 10 16 exp
0.337 mA
0.026

(b) (i) I D = 10 16 A
(ii) I D = 10 16 A
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TYU1.8
T = 100C so VD 2 100 = 200 mV
Then VD = 0.650 0.20 = 0.450 V
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TYU1.9

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Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 1
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
TYU1.10
(a) I D = 0

(b)
(c)

2 0.7
= 0.325 mA
4
5 0.7
ID =
= 1.075 mA
4
ID = 0
ID =

(d)
(e) I D = 0
______________________________________________________________________________________
TYU1.11
P = I DVD 1.05 = I D ( 0.7 ) so I D = 1.5 mA
VPS V

10 0.7
=
R = 6.2 k
1.5
ID
______________________________________________________________________________________

Now R =

TYU1.12
ID
0.8
=
= 30.8 mS
VT 0.026
______________________________________________________________________________________
gd =

TYU1.13
rd =

VT 0.026
=
= 2.6 k
I D 0.010

0.026
260
0.10
0.026
rd =
26
1
----------------------------------------------------------------------------------------------------------------------------rd =

TYU1.14
rd =

VT
0.026
0.026
50 =
ID =
50
ID
ID

or
I D = 0.52 mA
______________________________________________________________________________________

TYU1.15
For the pn junction diode,
4 0.7
ID =
= 0.825 mA
4
4 0.3
= 0.925 mA
4
______________________________________________________________________________________

For the Schottky diode, I D =

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 1
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________

TYU1.16
Vz = Vzo + I z rz Vzo = Vz I z rz so Vzo = 5.20 (103 ) ( 20 ) = 5.18 V

Then Vz = 5.18 + (10 103 ) ( 20 ) Vz = 5.38 V

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TYU1.17
P = I Z VZ I Z =

P 6.5
=
= 1.81 mA
V Z 3.6

V PS = I Z R + V Z = (1.81)(4 ) + 3.6 = 10.8 V

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