SPF-5189Z 50MHz to 4000MHz, GaAs pHEMT Low Noise MMIC Amplifier

SPF-5189Z
50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER

Product Description
The SPF-5189Z is a high performance pHEMT MMIC LNA designed for operation from 50MHz to 4000MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations. The SPF-5189Z offers ultra-low noise figure and high linearity performance in a gain block configuration. Its single-supply operation and integrated matching networks make implementation remarkably simple. A high maximum input power specification make it ideal for high dynamic range receivers.
Optimum Technology Matching Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS
Gain (dB)
16 15 14 13 12 11 10 9 8 7 6 1.7 1.8 1.9 2.0 2.1 2.2
NF S21

Features

Ultra-Low Noise Figure=0.60dB at 900MHz Gain=18.7dB at 900MHz High Linearity: OIP3 =39.5dBm at 1960MHz P1dB =22.7dBm at 1960MHz Single-Supply Operation: 5V at IDQ =90mA Flexible Biasing Options: 3V to 5V, Adjustable Current Broadband Internal Matching

Gain and NF versus Frequency

2.0

Gain NF

1.8 1.6 1.4

SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS

1.0 0.8 0.6 0.4 0.2 0.0

NF (dB)

Si BiCMOS

1.2

Applications

Cellular, PCS, W-CDMA, ISM, WiMAX Receivers PA Driver Amplifier Low Noise, High Linearity Gain Block Applications

Frequency (GHz)

Parameter
Small Signal Gain

Min.
11.3

Specification Typ.

Max.

Unit
0.9GHz 1.96GHz 0.9GHz 1.96GHz 0.9GHz 1.96GHz 0.9GHz 1.96GHz 0.9 GHz 1.96GHz 0.9GHz 1.96GHz 0.9GHz 1.96GHz Quiescent Junction to lead

Condition

18.7 dB 12.8 14.3 dB Output Power at 1dB Compression 22.4 dBm 20.7 22.7 dBm Output Third Order Intercept Point 38.5 dBm 36.0 39.5 dBm Noise Figure 0.55 dB 0.8 1.1 dB Input Return Loss 17.5 dB 14.5 18.5 dB Output Return Loss 16.0 dB 11.0 15.0 dB Reverse Isolation 24.0 dB 18.0 dB Device Operating Voltage 5 5.25 V Device Operating Current 75 90 105 mA Thermal Resistance 65 C/W Test Conditions: VD =5V, IDQ =90mA, TL=25C, OIP3 Tone Spacing=1MHz, POUT per tone=0dBm ZS =ZL =50 , 25C, Application Circuit Data

RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc.

DS091125

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SPF-5189Z
Absolute Maximum Ratings
Parameter
Max Device Current (lD) Max Device Voltage (VD) Max RF Input Power Max Dissipated Power Max Junction Temperature (TJ) Operating Temperature Range (TL) Max Storage Temperature ESD Rating - Human Body Model (HBM) Moisture Sensitivity Level (MSL)

Rating
120 5.5 27 660 150 -40 to + 85 -65 to +150 Class 1B MSL 2

Unit
mA V dBm mW C C C

Caution! ESD sensitive device.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.

Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD <(TJ -TL)/RTH, j-l and TL =TLEAD

Typical RF Performance - Application Circuit Data with VD =5V, ID =90mA

Parameter

Unit

0.8 GHz

0.9 GHz

1.0 GHz

1.7 GHz

1.8 GHz

1.9 GHz

2.0 GHz
12.7 0.90 39.8 22.7 18.5 15.0 18.0

2.1 GHz
12.2 0.91 39.8 22.7 18.5 15.5 17.5

2.2 GHz
11.9 0.98 39.9 22.7 18.0 16.0 17.0

Small Signal Gain dB 19.6 18.7 17.9 13.8 13.5 12.9 Noise Figure dB 0.52 0.55 0.79 0.75 0.81 0.83 Output IP3 dBm 38.4 38.5 39.0 39.2 39.5 39.5 Output P1dB dBm 22.3 22.4 22.5 22.6 22.6 22.7 Input Return Loss dB 17.1 17.5 17.5 17.5 17.5 18.5 Output Return Loss dB 16.0 16.0 15.5 14.0 14.0 14.5 Reverse Isolation dB 24.5 24.0 23.0 18.5 18.5 18.0 Test Conditions: VD =5V, IDQ =90mA, OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, TL =25C, ZS =ZL =50

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DS091125

SPF-5189Z
Typical RF Performance - 900MHz Application Circuit with VD =5V, ID =90mA
Noise Figure versus Frequency
2.0 1.8 1.6 1.4
46

OIP3 versus Frequency (0dBm tones)

+25C +85C
42

NF (dB)

1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.80 0.82 0.84 0.86 0.88 0.90 0.92 0.94 0.96 0.98 1.00

OIP 3 (dBm)

38

34

30

+25C -40C +85C

26 0.80 0.82 0.84 0.86 0.88 0.90 0.92 0.94 0.96 0.98 1.00

Frequency (GHz)

Frequency (GHz)

OIP3 versus Power (850MHz, 1MHz spacing)

46 24 23 42 22

POUT versus Pin at 850MHz

110

OIP 3 (dBm)

19 18 17 16 15 14

85 80 75 70 65 60 -4 -2 0 2 4 6 8 10

34

30

+25C -40C +85C

26 0 2 4 6 8 10 12 14

Power Out Per Tone (dBm)

Power in (dBm)

P1dB versus Frequency

26
140.0

Device Current versus Voltage

24

120.0 100.0

P1dB (dBm)

22

20

ID (mA)

80.0 60.0 40.0 20.0 0.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0

18

+25C -40C +85C

25C -40C 85C

16 0.80 0.82 0.84 0.86 0.88 0.90 0.92 0.94 0.96 0.98 1.00

Frequency (GHz)

VD (V)

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Bias (mA)

38

Power out (dBm)

21 20

Pout_25C Pout_-40C Pout_85C Bias_25C Bias_-40C Bias_85C

105 100 95 90

SPF-5189Z
Typical RF Performance - 900MHz Application Circuit with VD =5V, ID =90mA
S11 versus Frequency
0
24

S21 versus Frequency

-5
22

-10

S11 (dB)

-15

Gain (dB)

20

18

-20

-25

-40C 25C 85C

0.7 0.8 0.9 1.0 1.1 1.2

16

-40C 25C 85C

0.7 0.8 0.9 1.0 1.1 1.2

-30

14

Frequency (GHz)

Frequency (GHz)

S12 versus Frequency

0 -5 -10 0

S22 versus Frequency

-40C 25C 85C -40C 25C 85C

-5 -10

S12 (dB)

S22 (dB)

-15 -20 -25 -30 0.7 0.8 0.9 1.0 1.1 1.2

-15 -20 -25 -30 0.7 0.8 0.9 1.0 1.1 1.2

Frequency (GHz)

Frequency (GHz)

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DS091125

SPF-5189Z
Typical RF Performance - 1900MHz Application Circuit with VD =5V, ID =90mA
Noise Figure versus Frequency
2.0 1.8 1.6 1.4

OIP3 versus Frequency (0dBm tones)

46

42

NF (dB)

1.2 1.0 0.8 0.6 0.4 0.2 0.0 1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.10 2.15 2.20

OIP 3 (dBm)

38

34

+25C +85C

30

+25C -40C +85C

26 1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.10 2.15 2.20

Frequency (GHz)

Frequency (GHz)

OIP3 versus Power (1900MHz, 1MHz spacing)

46 24 23 42 22

POUT versus Pin at 1900MHz

110

Power out (dBm)

21 20 19 18 17 16 15 14

Pout_25C Pout_-40C Pout_85C Bias_25C Bias_-40C Bias_85C

105 100 95

OIP 3 (dBm)

85 80 75 70 65 60 1 3 5 7 9 11 13 15

34

30

+25C -40C +85C

26 0 2 4 6 8 10 12 14

Power Out Per Tone (dBm)

Power in (dBm)

P1dB versus Frequency

26

24

P1dB (dBm)

22

20

18

+25C -40C +85C

16 1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.10 2.15 2.20

Frequency (GHz)

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Bias (mA)

38

90

SPF-5189Z
Typical RF Performance - 1900MHz Application Circuit with VD =3V, ID =90mA
S11 versus Frequency
0 18

S21 versus Frequency

-5 16 -10

S11 (dB)

-15

Gain (dB)

14

12

-20

-25

-40C 25C 85C

1.7 1.8 1.9 2.0 2.1 2.2

10

-40C 25C 85C

1.7 1.8 1.9 2.0 2.1 2.2

-30

Frequency (GHz)

Frequency (GHz)

S12 versus Frequency

0 -5 -10 0 -5 -10

S22 versus Frequency

S12 (dB)

S22 (dB)
-40C 25C 85C
1.7 1.8 1.9 2.0 2.1 2.2

-15 -20 -25 -30

-15 -20 -25 -30 1.7 1.8 1.9 2.0 2.1 2.2

-40C 25C 85C

Frequency (GHz)

Frequency (GHz)

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SPF-5189Z
De-embedded Device S-parameters (Bias Tee Data)

GMAX versus Frequency (5V, 90mA)

30 25

Gmax Gain

Gain, Gmax (dB)

20 15 10 5 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0

Frequency (GHz)

S11 versus Frequency (5V, 90mA)

S22 versus Frequency (5V, 90mA)

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DS091125

SPF-5189Z
900MHz Evaluation Board Layout

Bill of Materials (SPF-5189Z, 900MHz)

C1 C2, C3, C4 L1 L2 ECJ-1VB1C104, Panasonic, 0.1uF ECJ-1VC1H101J, Panasonic, 100pF LL1608-FSL1N5, Toko, 1.5nH LL1608-FSR15J, Toko, 150nH

900MHz Application Schematic

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SPF-5189Z
1900MHz Evaluation Board Layout

Bill of Materials (SPF-5189Z, 1900MHz)

C1 C2, C4 C3 L1 ECJ-1VB1C104, Panasonic, 0.1uF ECJ-1VC1H101J, Panasonic, 100pF ECJ-1VC1H100, Panasonic, 10pF LL1608-FSL47N, Toko, 47nH

1900MHz Application Schematic

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SPF-5189Z
Pin 1 2, 4 3 Function RF IN GND RF OUT/DC BIAS Description
RF input pin. This pin requires the use of an external DC-blocking capacitor chosen for the frequency of operation. Connection to ground. Use via holes as close to the device ground leads as possible to reduce ground inductance and achieve optimum RF performance. RF output and bias pin. This pin requires the use of an external DC-blocking capacitor chosen for the frequency of operation.

Part Identification

Suggested Pad Layout

Package Drawing
Dimensions in inches (millimeters) Refer to drawing posted at www.rfmd.com for tolerances.

Ordering Information
Part Number
SPF-5189Z SPF-5189Z-EVB1 SPF-5189Z-EVB2

Description
Lead Free, RoHS Compliant 800MHz to 1000MHz Evaluation Board 1700MHz to 2200MHz Evaluation Board

Reel Size
7 N/A N/A

Devices/Reel
1000 N/A N/A

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DS091125