ESE319 Introduction to Microelectronics

BJT Intro and Large Signal Model

2009 by Kenneth R. Laker, update 17Sep09 KRL

ESE319 Introduction to Microelectronics

Why BJT?
What's the competition to BJT and bipolar technologies? What advantages does the competition have over BJT? What advantages does BJT and bipolar have over their competition? What circuit applications benefit from BJT and bipolar technologies?

2009 by Kenneth R. Laker, update 17Sep09 KRL

ESE319 Introduction to Microelectronics

What's the competition to BJT and bipolar technologies? MOSFET, in particular CMOS is the leading competitor What advantages does the competition have over BJT? Small size (die area), low cost and low power dissipation What advantages does BJT and bipolar have over their competition? High frequency operation, high current drive, high reliability in severe environmental conditions. What circuit applications benefit from BJT and bipolar technologies? RF analog and digital circuits,power electronics and power amplifiers, automobile electronics, radiation hardened electronics
2009 by Kenneth R. Laker, update 17Sep09 KRL

Why BJT

ESE319 Introduction to Microelectronics

BJT Physical Configuration

NPN PNP

Closer to actual layout Each transistor looks like two back-to-back diodes, but each behaves much differently!
2009 by Kenneth R. Laker, update 17Sep09 KRL

ESE319 Introduction to Microelectronics

NPN
IE

BJT Symbols and Conventions

Metal contact IC IE IB

PNP

IC IB

IE = IC + IB

Note reversal in current directions and voltage signs for PNP vs. NPN!
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ESE319 Introduction to Microelectronics

NPN BJT Modes of Operation

iE = iC + i B vCE = vCB + vBE vXY = VXY + vxy
large signal dc bias ac signal

VCB

Forward-Active Mode EBJ forward bias (VBE > 0) CBJ reverse bias (VBC < 0)

VBE

Mode Forward-Active Reverse-Active Cutoff Saturation

2009 by Kenneth R. Laker, update 17Sep09 KRL

VBE >0 <0 <0 >0

VBC <0 >0 <0 >0

VBC = -VCB Not Useful!

ESE319 Introduction to Microelectronics

NPN BJT Forward-Active Mode Basic Model

Collector-base diode is reverse biased V CB) 0 ( or VBC < 0) Base-emitter diode is forward biased saturation current
V BE $ 0.7

AE W NA Dn ni

A E q D n ni I s= N AW

iC $ I S e

v BE VT

VT=

Area of base-emitter junction Width of base region Doping concentration in base Electron diffusion constant Intrinsic carrier concentration = f(T)

iC i B= -

kT o $ 25 mV @ 25 C q

i E =i B 'i C =*-'1 + i B
-= common " emitter current gain
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ESE319 Introduction to Microelectronics

NPN BJT Forward-Active Beta (")

1 -= Dp N A W 1 W 2 ' D n N D L p 2 D n .b

AE -> Area of base-emitter junction W -> Width of base region NA -> Doping concentration in base ND -> Doping concentration in emitter Dn -> Electron diffusion constant Dp -> Hole diffusion constant Lp -> Hole diffusion length in emitter #b -> Minority-carrier lifetime ni -> Intrinsic carrier concentration = f(T)
2009 by Kenneth R. Laker, update 17Sep09 KRL

Large " => NA -> small ND -> large W -> small

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Note that the iC equation looks like that of a forward-biased diode collector-base. Is it?

Using Eqs. iE = iB + iC and iC = "iB we can answer this question, i.e. -'1 1 i E =i B 'i C =* '1 + i C = iC -= common " emitter current gain
, = common" base current gain and write: v v iC -'1 1 V V iE= I S * e " 1 += I S * e " 1 += , = where 1', ,
BE T BE T

AhHa! This iE equation describes a forward-biased emitter-base diode.

2009 by Kenneth R. Laker, update 17Sep09 KRL

ESE319 Introduction to Microelectronics

So the new set of equations is:
IS i E = * e " 1+ ,
iC = I S * e
v BE VT

Where:
,= -' 1

v BE VT

Typically:
50 (-( 200 => 0.980 (,( 0.995

"1 +=, i E

iC i B= A E q D n ni 2 I s= N AW

10"18 ( I S (10"12 A.

Is is strongly temperaturedependent, doubling for a 5 degree Celsius increase in ambient temperature!

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2009 by Kenneth R. Laker, update 17Sep09 KRL

ESE319 Introduction to Microelectronics

Two equivalent large signal circuit models for the forward-active mode NPN BJT:
iC = I S * e "1 +$ I S e
Nonlinear VCCS
v BE VT v BE VT

Nonlinear CCCS

Key Eqs.
, =, F
iC $ I S e
v BE VT

=, F i E
v BE VT

IS i E$ e ,F
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ESE319 Introduction to Microelectronics

Yet another NPN BJT large signal model

iC = - i B $ I S e
v BE VT

IS ! iB$ e -

v BE VT

iB

iC

This looks like a diode between base and emitter and the equivalent circuit becomes:

iE

Note that in this model, the diode current is represented in terms of the base current. In the previous ones, it was represented in terms of the emitter current.
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ESE319 Introduction to Microelectronics

NPN BJT Operating in the Reverse-Active Mode

Recall for NPN Reverse-Active Mode VBE < 0 & VBC > 0
&
& & &

We also have weak transistor action if we:

Forward bias the base-collector junction and Reverse bias the base emitter junction Collector and emitter reverse roles

&
&

The physical construction of the transistor results

Weak reverse-active performance
& &

Small values of " on the order of 0.01 to 1 Correspondingly smaller values of !, e. g.

-R 0.1 , R= $ $ 0.091 - R'1 1.1

2009 by Kenneth R. Laker, update 17Sep09 KRL

for

- R =0.1
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ESE319 Introduction to Microelectronics

The equivalent large signal circuit model for the reverse-active mode NPN BJT: FWD
RVRS Active
iB
iC iB iE

iC collector and emitter reverse roles

Active

i C $ I S e =, F i E

v BE VT

iE Note that the directions of the reverse-active currents are the reverse of the forward-active currents; hence the minus signs.

Key Eqs.
"I S iC $ e ,R
v BC VT

=" I SC e =, R iC

v BC VT

BJT is non-symmetrical
, R %, F - R %- F

i E $" I S e

v BC VT

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ESE319 Introduction to Microelectronics

The Ebers-Moll Large Signal Model

The E-M model combines the FWD & RVRS Active equivalent circuits: Note that the lower left diode and the upper right controlled current source form the forward-active mode model, while the upper left diode and the lower right source represent the reverse-active mode model.
IS V i DE = * e "1 + ,F
T

v BE

iC = , F i DE "i DC i E =i DE ", R i DC

i B =*1 ", F + I DE '* 1", R + I DC

2009 by Kenneth R. Laker, update 17Sep09 KRL

IS V i DC = * e "1 + ,R
T

v BC

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ESE319 Introduction to Microelectronics

Operation in the Saturation Mode

Recall for Saturation Mode VBE > 0 & VBC > 0 (or VCB < 0) Consider the E-M model for collector current.
i C =, F i DE " i DC
IS V i C = I S * e "1 +" * e "1 + ,R
T

v BE VT

v BC

The first term is the forward mode collector current:

, F i DE = I S * e "1 + The second is the reverse mode collector current: v IS V i DC = * e "1 + ,R
BC T

v BE VT

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ESE319 Introduction to Microelectronics

Combining terms:
IS V iC = I S * e "1 +" * e "1 + ,R
T

Using typical values:

v BC

v BE VT

- R =0.1

iC = * e

v BE VT

- R' 1 "1 +" *e -R

"v CB VT

"1 + I S

We obtain: i C =[ * e
40 v BE

1 - R '1 = ,R -R
" 40 v CB

I S =10"14 A

V T =0.025 V

"1 +"11 * e

"1 + ] 10"14

Let's plot iC vs. vBC (or vCB) with vBE = 0.7 V

2009 by Kenneth R. Laker, update 17Sep09 KRL

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ESE319 Introduction to Microelectronics

Scilab Saturation Mode Calculation

//Calculate and plot npn BJT collector //current in saturation mode vBE=0.7; VsubT=0.025; VTinv=1/VsubT; v BE v BC betaR=0.1; I V S V IsubS=1E-14; i C = I S * e T "1 +" * e T "1 + ,R alphaR=betaR/(betaR+1); alphaInv=1/alphaR; ForwardExp=exp(VTinv*vBE)-1; vCB=-0.7:0.001:-0.1; vBC=-vCB; ReverseExp=alphaInv*(exp(VTinv*vBC)-1); iC=(ForwardExp-ReverseExp)*IsubS; signiC=sign(iC); iCplus=(iC+signiC.*iC)/2; //Zero negative values plot(vCB,1000*iCplus); //Current in mA.
2009 by Kenneth R. Laker, update 17Sep09 KRL

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ESE319 Introduction to Microelectronics

Saturation Mode Plot

iC(ma)
Note: forward-active NPN operation continues for negative vCB down to - 0.5V; i.e. vCB > - 0.5V Forward-active Saturation A vBE = 0.7V Recall for Sat. Mode vBE > 0 & vBC > 0 (or vCB < 0)

vCB(V)
2009 by Kenneth R. Laker, update 17Sep09 KRL

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ESE319 Introduction to Microelectronics

Scilab Plot of NPN Characteristic (iC vs. vCE and vBE)

//Calculate and plot npn BJT collector //characteristic using Ebers-Moll model VsubT=0.025; VTinv=1/VsubT; betaR=0.1; v BE v BC alphaInv=(betaR+1)/betaR; I S VT VT IsubS=1E-14; i C = I S * e "1 +" * e "1 + ,R for vBE=0.6:0.02:0.68 ForwardExp=exp(VTinv*vBE)-1; vCE=-0:0.001:10; vCE = vCB + vBE vBC=vBE-vCE; ReverseExp=alphaInv*(exp(VTinv*vBC)-1); iC=(ForwardExp-ReverseExp)*IsubS; signiC=sign(iC); iCplus=(iC+signiC.*iC)/2; //Zero negative vals plot(vCE,1000*iCplus); //Current in mA. end
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ESE319 Introduction to Microelectronics

Plot Output
iC (ma)
saturation mode forward-active mode v BE = 0.68 V

Early effect not included.

v BE = 0.66 V v BE = 0.64 V
v BE = 0.62 V

vCE = vCB + vBE vCE (V)

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ESE319 Introduction to Microelectronics

&

More on NPN Saturation The base-collector diode has much larger area than the base-emitter one.
&

Therefore, with the same applied voltage, it will conduct a much larger forward current than will the base-emitter diode. When the collector-emitter voltage drops below the base-emitter voltage, the base-collector diode is forward biased and conducts heavily.
v CB =v CE " v BE
when

IS V iC = I S * e "1 +" * e "1 + where !R << 1 ,R

T

v BE VT

v BC

&

v CE $ V CE * sat +
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ESE319 Introduction to Microelectronics

iC Expansion Around Zero vCE

iC (mA) IC = 0
vBE = 0.68 V, vCE = 0.25 V, vBC= vBE - vCE= 0.43 V Diode forward voltage

vCE (V)

Note that the collector current is zero at about vCE = 0.06 V, not 0 V ! Also note the large reverse collector-base current for vCE < 0.06 V.
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ESE319 Introduction to Microelectronics

IS V i C = I S * e "1 +" * e "1 + ,R
BE BC T

Voltage at Zero Collector Current v v

VT

, R * e "1 +=* e , R * 1" e

" v BE VT

v BE VT

* v BE " vCE + VT v CE VT

"1 +
" v BE VT

+=* e

"

"e

V BE $ 40#0.7 ! e VT v

"

v BE VT

%1

iC = 0 => v v IS V V * e " 1 += I S * e " 1 + ,R

BC T BE T

, R= e
, R= e

"

CE

VT

! v CE ="V T ln *, R +
! v CE ="V T ln *, R +

"

v CE VT

, R * e "1 +=* e

v BE VT

v BC VT

"1 +

For "R = 0.1 => !R = 0.09 => vCE = - 0.06 V

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ESE319 Introduction to Microelectronics

pnp

The PNP Transistor

npn

Mode Forward-Active Reverse-Active Cutoff Saturation

2009 by Kenneth R. Laker, update 17Sep09 KRL

VEB >0 <0 <0 >0

VCB <0 >0 <0 >0

VCB = -VBC Not Useful!

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ESE319 Introduction to Microelectronics

PNP BJT Forward-Active Mode Basic Model

Collector-base diode is reverse biased

V BC )0
Emitter-base diode is forward biased

V EB$ 0.7
Note reversal in voltage polarity and in current directions!
2009 by Kenneth R. Laker, update 17Sep09 KRL

i C = I S * e "1 + iC i B= i E =i B 'i C =*-'1 + i B

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v EB VT

ESE319 Introduction to Microelectronics

PNP BJT Large Signal Model FWD. Active

rotate 180o

NPN

i C = I S * e "1 + iC i B= i E =i B 'i C =*-'1 + i B

v EB VT

Note reversal in current directions!

2009 by Kenneth R. Laker, update 17Sep09 KRL

Substituting, as in the npn case, we get:

IS V i E = * e "1 + ,
T

v EB

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Yet another PNP BJT large signal model

IS IS i C = - i B = I S * e "1 +! i B = * e "1 +$ e v EB VT v EB VT v EB VT

This looks like a diode between base and emitter and the equivalent circuit becomes:

iB

iC

Again, in this model, the diode carries only base current, not emitter current.
2009 by Kenneth R. Laker, update 17Sep09 KRL

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