MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G, SUR8820G, SUR8840G Switch-mode Power Rectifiers

This series is designed for use in switching power supplies, inverters and as free wheeling diodes.
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ULTRAFAST RECTIFIERS 8.0 AMPERES, 50600 VOLTS

1 4 3

Ultrafast 25 and 50 Nanosecond Recovery Time 175C Operating Junction Temperature Epoxy Meets UL 94 V0 @ 0.125 in Low Forward Voltage Low Leakage Current Reverse Voltage to 600 V ESD Ratings: Machine Model = C (> 400 V) Human Body Model = 3B (> 16,000 V) SUR8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant*

Mechanical Characteristics:

TO220AC CASE 221B STYLE 1

TO220 FULLPAK CASE 221AG STYLE 1

Case: Epoxy, Molded Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal

MARKING DIAGRAMS

Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max for 10 Seconds

AY

WWG U8xx KA

AYWWG MURF860 KA

A Y WW U8XX G KA

= = = =

Assembly Location Year Work Week Device Code xx = 05, 10, 15, 20, 40, or 60 = PbFree Package = Diode Polarity

ORDERING INFORMATION
*For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2014

See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet.

February, 2014 Rev. 13

Publication Order Number: MUR820/D

MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G, SUR8820G, SUR8840G

MAXIMUM RATINGS
MUR/SUR8 Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Total Device, (Rated VR), TC = 150C Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz), TC = 150C Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature and Storage Temperature Range Symbol VRRM VRWM VR IF(AV) IFM IFSM TJ, Tstg 805 50 810 100 815 150 820 200 840 400 860 600 Unit V

8.0 16 100 65 to +175

A A A C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS
MUR/SUR8 Characteristic Maximum Thermal Resistance, JunctiontoCase Thermal Resistance, JunctiontoCase MURF860 Thermal Resistance, JunctiontoAmbient Thermal Resistance, JunctiontoAmbiente MURF860 Symbol RqJC RqJC RqJA RqJA 805 810 3.0 4.75 73 75 815 820 840 2.0 860 Unit C/W C/W C/W C/W

ELECTRICAL CHARACTERISTICS
MUR/SUR8 Characteristic Maximum Instantaneous Forward Voltage (Note 1) (iF = 8.0 A, TC = 150C) (iF = 8.0 A, TC = 25C) Maximum Instantaneous Reverse Current (Note 1) (Rated DC Voltage, TJ = 150C) (Rated DC Voltage, TJ = 25C) Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 A/ms) (IF = 0.5 A, iR = 1.0 A, IREC = 0.25 A) Symbol vF 805 810 815 820 840 1.00 1.30 860 1.20 1.50 Unit V

0.895 0.975 250 5.0 35 25

iR

500 10 60 50

mA

trr

ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.

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MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G, SUR8820G, SUR8840G

MUR805G, MUR810G, MUR815G, MUR820G, SUR8820G
100 IR, REVERSE CURRENT (m A) 70 50 1000 TJ = 175C

100

10

30 i F , INSTANTANEOUS FORWARD CURRENT (AMPS) 20

100C 25C

1.0

0.1 0.01 0 20 40 60 80 100 120 140 160 VR, REVERSE VOLTAGE (VOLTS) 180 200

10 7.0 5.0

Figure 2. Typical Reverse Current*

3.0 2.0 TJ = 175C 1.0 0.7 0.5 100C 25C IF(AV) , AVERAGE FORWARD CURRENT (AMPS) 10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 140 150 160 170 180 TC, CASE TEMPERATURE (C) SQUARE WAVE dc RATED VR APPLIED * The curves shown are typical for the highest voltage device in the grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR.

0.3 0.2

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 vF, INSTANTANEOUS VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage

Figure 3. Current Derating, Case

PF(AV) , AVERAGE POWER DISSIPATION (WATTS)

IF(AV) , AVERAGE FORWARD CURRENT (AMPS)

14 12 dc 10 8.0 6.0 4.0 2.0 0 0 20 40 60 80 100 120 140 160 180 200 TA, AMBIENT TEMPERATURE (C) dc SQUARE WAVE SQUARE WAVE RqJA = 16C/W RqJA = 60C/W (NO HEAT SINK)

10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 IF(AV), AVERAGE FORWARD CURRENT (AMPS) SQUARE WAVE dc TJ = 175C

Figure 4. Current Derating, Ambient

Figure 5. Power Dissipation

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MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G, SUR8820G, SUR8840G

MUR840G, SUR8840G
100 IR, REVERSE CURRENT (m A) 70 50 1000 TJ = 175C 150C 100C 25C 1.0

100

10

30 i F , INSTANTANEOUS FORWARD CURRENT (AMPS) 20

0.1 0.01 0 50 100 150 200 250 300 350 400 VR, REVERSE VOLTAGE (VOLTS) 450 500

10 7.0 5.0 TJ = 175C 3.0 100C 2.0 IF(AV) , AVERAGE FORWARD CURRENT (AMPS) 10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 140 150 160 170 180 TC, CASE TEMPERATURE (C) SQUARE WAVE dc RATED VR APPLIED 25C

Figure 7. Typical Reverse Current*

* The curves shown are typical for the highest voltage device in the grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR.

1.0 0.7 0.5

0.3 0.2

0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 vF, INSTANTANEOUS VOLTAGE (VOLTS)

Figure 6. Typical Forward Voltage

Figure 8. Current Derating, Case

PF(AV) , AVERAGE POWER DISSIPATION (WATTS)

IF(AV) , AVERAGE FORWARD CURRENT (AMPS)

14 12 10 8.0 6.0 4.0 2.0 0 0 20 40 60 80 100 120 140 160 180 200 TA, AMBIENT TEMPERATURE (C) SQUARE WAVE dc SQUARE WAVE dc RqJA = 16C/W RqJA = 60C/W (NO HEAT SINK)

10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 IF(AV), AVERAGE FORWARD CURRENT (AMPS) SQUARE WAVE dc TJ = 175C

Figure 9. Current Derating, Ambient

Figure 10. Power Dissipation

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MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G, SUR8820G, SUR8840G

MUR860G, MURF860G
i F , INSTANTANEOUS FORWARD CURRENT (AMPS) 100 IR, REVERSE CURRENT (m A) TJ = 150C 100C 10 25C 1000 TJ = 150C

100

10

100C

1.0 25C

0.1 0.01 100

0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 vF, INSTANTANEOUS VOLTAGE (VOLTS)

200

300 500 400 VR, REVERSE VOLTAGE (VOLTS)

600

Figure 11. Typical Forward Voltage

Figure 12. Typical Reverse Current*

* The curves shown are typical for the highest voltage device in the grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR.

IF(AV) , AVERAGE FORWARD CURRENT (AMPS)

IF(AV) , AVERAGE FORWARD CURRENT (AMPS)

10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 140 SQUARE WAVE dc RATED VR APPLIED

10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 20 40 60 80 100 120 140 160 180 200 SQUARE WAVE dc SQUARE WAVE dc RqJA = 16C/W RqJA = 60C/W (NO HEAT SINK)

150

160

170

TC, CASE TEMPERATURE (C)

180

TA, AMBIENT TEMPERATURE (C)

Figure 13. Current Derating, Case

PF(AV) , AVERAGE POWER DISSIPATION (WATTS) 14 13 12 11 10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 1.0 2.0 3.0 4.0 5.0 10,000

Figure 14. Current Derating, Ambient

I FSM , NON-REPETITIVE SURGE CURRENT (A) 10

SQUARE WAVE dc

1,000

TJ = 175C

100 10 100 1,000 10,000 tp, SQUARE WAVE PULSE DURATION (ms)

6.0

7.0

8.0

9.0

IF(AV), AVERAGE FORWARD CURRENT (AMPS)

Figure 15. Power Dissipation

Figure 16. Typical NonRepetitive Surge Current

* Typical performance based on a limited sample size. ON Semiconductor does not guarantee ratings not listed in the Maximum Ratings table.

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r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G, SUR8820G, SUR8840G

1.0 D = 0.5 0.5 0.1 0.05 0.01 ZqJC(t) = r(t) RqJC RqJC = 1.5C/W MAX t1 SINGLE PULSE 0.02 0.01 0.01 t2 DUTY CYCLE, D = t1/t2 0.02 0.05 0.1 0.2 0.5 1.0 2.0 t, TIME (ms) 5.0 10 20 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT T1 TJ(pk) - TC = P(pk) ZqJC(t) 50 100 200 500 1000

0.2 0.1 0.05

P(pk)

Figure 17. Thermal Response

10 r(t), TRANSIENT THERMAL RESPONSE (NORMALIZED) (C/W) D = 0.5 1.0 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 0.0001 0.001 0.01 t, TIME (s) 0.1 1.0

0.1

P(pk)

ZqJC(t) = r(t) RqJC RqJC = 1.6C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 10 100 1000

0.001 0.000001

0.00001

Figure 18. Thermal Response, (MURF860G) JunctiontoCase (RqJC)

r(t), TRANSIENT THERMAL RESPONSE (NORMALIZED) (C/W)

100

D = 0.5 0.2 0.1 0.05 0.02 0.01

10

1.0 P(pk) ZqJC(t) = r(t) RqJC RqJC = 1.6C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 10 100 1000

0.1

0.01

SINGLE PULSE

t1 t2 DUTY CYCLE, D = t1/t2 0.0001 0.001 0.01 t, TIME (s) 0.1 1.0

0.001 0.000001

0.00001

Figure 19. Thermal Response, (MURF860G) JunctiontoAmbient (RqJA)

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MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G, SUR8820G, SUR8840G

1000 500 C, CAPACITANCE (pF) TJ = 25C

200 100 50

20 10 1.0 2.0 10 5.0 20 VR, REVERSE VOLTAGE (V) 50 100

Figure 20. Typical Capacitance

ORDERING INFORMATION
Device MUR805G MUR810G MUR815G MUR820G SUR8820G MUR840G SUR8840G MUR860G MURF860G Package TO220AC (PbFree) TO220AC (PbFree) TO220AC (PbFree) TO220AC (PbFree) TO220AC (PbFree) TO220AC (PbFree) TO220AC (PbFree) TO220AC (PbFree) TO220FP (PbFree) Shipping 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail

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MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G, SUR8820G, SUR8840G

PACKAGE DIMENSIONS
TO220 TWOLEAD CASE 221B04 ISSUE F
C Q B F T S
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K L Q R S T U INCHES MIN MAX 0.595 0.620 0.380 0.405 0.160 0.190 0.025 0.039 0.142 0.161 0.190 0.210 0.110 0.130 0.014 0.025 0.500 0.562 0.045 0.060 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 MILLIMETERS MIN MAX 15.11 15.75 9.65 10.29 4.06 4.82 0.64 1.00 3.61 4.09 4.83 5.33 2.79 3.30 0.36 0.64 12.70 14.27 1.14 1.52 2.54 3.04 2.04 2.79 1.14 1.39 5.97 6.48 0.000 1.27

A
1 3

H K L G

D J

STYLE 1: PIN 1. 2. 3. 4.

CATHODE N/A ANODE CATHODE

TO220 FULLPAK, 2LEAD CASE 221AG ISSUE A

A P 0.14
4 M

E E/2

B H1 A A1

SEATING PLANE

B A

Q
1 2 3

C
NOTE 3

L1 b 0.25
M

3X 3X

c B A
M

b2 e e1

A2
STYLE 1: PIN 1. 2. 3.

NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR UNCONTROLLED IN THIS AREA. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY. 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00. MILLIMETERS DIM MIN MAX A 4.30 4.70 A1 2.50 2.90 A2 2.50 2.90 b 0.54 0.84 b2 1.10 1.40 c 0.49 0.79 D 14.22 15.88 E 9.65 10.67 e 2.54 BSC e1 5.08 BSC H1 5.97 6.48 CATHODE N/A L 12.70 14.73 ANODE L1 --2.80 P 3.00 3.40 Q 2.80 3.20

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLCs product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

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MUR820/D