ATF-58143

Low Noise Enhancement Mode Pseudomorphic HEMT

in a Surface Mount Plastic Package

Data Sheet

Description

Features

Avago Technologies ATF-58143 is a high dynamic

range, low noise E-PHEMT housed in a 4-lead SC-70
(SOT-343) surface mount plastic package.

Low noise and high linearity performance

The combination of high gain, high linearity and low

noise makes the ATF-58143 ideal as low noise amplifier for cellular/PCS/WCDMA base stations, wireless local loop, and other applications that require low noise
and high linearity performance in the 450 MHz to 6 GHz
frequency range.

Low cost surface mount small plastic package SOT343 (4 lead SC-70) in Tape-and-Reel packaging option
available

Surface Mount Package SOT-343

2 GHz; 3V, 30 mA (Typ.)

Enhancement Mode Technology[1]

Excellent uniformity in product specifications

Lead-free option available

Specifications
30.5 dBm output 3rd order intercept
19 dBm output power at 1 dB
0.5 dB noise figure
16.5 dB associated gain

Applications

DRAIN

SOURCE

8Fx

Pin Connections and Package Marking

SOURCE

Q1 LNA for cellular/PCS/WCDMA base stations

Q1, Q2 LNA and Pre-driver amplifier for 34 GHz WLL
Other low noise and high linearity applications at 450
MHz to 6 GHz
Note:

GATE

1. Enhancement mode technology requires positive Vgs, thereby

eliminating the need for the negative gate voltage associated with
conventional depletion mode devices.

Note:
Top View. Package marking provides orientation and identification
8F = Device Code
x = Date code character
identifies month of manufacture.

Attention: Observe precautions for

handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1A)
Refer to Avago Technologies Application Note A004R:
Electrostatic Discharge Damage and Control.

ATF-58143 Absolute Maximum Ratings [1]

Symbol

Parameter

Units

AbsoluteMaximum

VDS

Drain-SourceVoltage[2]

VGS

Gate-SourceVoltage[2]

-5to1

VGD

GateDrainVoltage[2]

-5to1

mA

100

DrainCurrent

IDS

[2]
[3]

Pdiss

TotalPowerDissipation

mW

500

Pinmax.

RF InputPower
(Vds=3V , Ids =30mA)
(Vds=0V, Ids=0mA)
(Vds=4V, Ids=30mA)

dBm
dBm
dBm

+20
+20
+20

IGS

GateSourceCurrent

mA

2[5]

TCH

ChannelTemperature

150

TSTG

StorageTemperature

-65to150

C/W

162

Notes:
1. Operation of this device above any one of these parameters may
cause permanent damage.
2. Assumes DC quiescent conditions.
3. Source lead temperature is 25C. Derate 6.2 mW/C for TL > 33C.
4. Thermal resistance measured using 150C Liquid Crystal Measurement method.
5. The device can handle +13 dBm RF Input Power provided IGS is limited
to 2 mA. IGS at P1dB drive level is bias circuit dependent. See applications
section for additional information.

120

0.7V

100
0.6V
80

IDS (mA)

ThermalResistance

jc

[4]

60
0.5V
40
20

0.4V
0.3V

0
0

VDS (V)

Figure 1. Typical I-V Curves (VGS=0.1V per step)

Product Consistency Distribution Charts [6, 7]

-150
Cpk=2.735
Stdev=0.049

Cpk=1.953
Stdev=0.2610

-125

Cpk=1.036
Stdev=0.509

-100
-75
-50
-25
0
0.3

0.4

0.5

0.6
NF (dB)

Figure 2. NF @ 3V, 30 mA.

USL = 0.9, Nominal = 0.5

0.7

0.8

15

16

17

18

GAIN (dB)

Figure 3. Gain @ 3V, 30 mA.

USL = 18.5, LSL = 15, Nominal = 16.5

28

29

30

31

32

33

34

OIP3 (dBm)

Figure 4. OIP3 @ 3V, 30 mA.

LSL = 29, Nominal = 30.5

Notes:
6. Distribution data sample size is 500 samples taken from 3 different wafers. Future wafers allocated to this product may have nominal values
anywhere between the upper and lower limits.
7. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based
on production test equipment. Circuit losses have been de-embedded from actual measurements.

ATF-58143 Electrical Specifications

TA = 25C, RF parameters measured in a test circuit for a typical device
Units

Min.

Typ.[2]

Max.

Vds = 3V, Ids = 30 mA

0.4

0.51

0.75

Threshold Voltage

Vds = 3V, Ids = 4 mA

0.18

0.38

0.52

Idss

Saturated Drain Current

Vds = 3V, Vgs = 0V

Gm

Transconductance

Vds = 3V,
gm = Idss/Vgs;
Vgs = 0.75 0.7 = 0.05V

mmho

230

410

560

Igss

Gate Leakage Current

Vgd = Vgs = -3V

200

f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz

Vds = 3V, Ids = 30 mA

Vds = 3V, Ids = 30 mA
Vds = 4V, Ids = 30 mA
Vds = 4V, Ids = 30 mA

dB
dB
dB
dB

0.5
0.3
0.5
0.3

0.9

Symbol

Parameter and Test Condition

Vgs

Operational Gate Voltage

Vth

[1]

NF

Noise Figure

Ga

Associated Gain[1]

f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz

Vds = 3V, Ids = 30 mA

Vds = 3V, Ids = 30 mA
Vds = 4V, Ids = 30 mA
Vds = 4V, Ids = 30 mA

dB
dB
dB
dB

15

16.5
23.1
17.7
22.5

18.5

OIP3

Output 3rd Order

Intercept Point[1]

f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz

Vds = 3V, Ids = 30 mA

Vds = 3V, Ids = 30 mA
Vds = 4V, Ids = 30 mA
Vds = 4V, Ids = 30 mA

dBm
dBm
dBm
dBm

29

30.5
28.6
31.5
31.0

P1dB

1dB Compressed
Output Power[1]

f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz

Vds = 3V, Ids = 30 mA

Vds = 3V, Ids = 30 mA
Vds = 4V, Ids = 30 mA
Vds = 4V, Ids = 30 mA

dBm
dBm
dBm
dBm

19
18
21
19

Notes:
1. Measurements obtained using production test board described in Figure 5.
2. Typical values determined from a sample size of 500 parts from 3 wafers.

28.2 + j9.4

RFin

input
matching

51 j3.3

output
matching

RFout

0.7 dB loss
0.6 dB loss
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB and OIP3 measurements. This circuit represents a
trade-off between an optimal noise match and associated impedance matching circuit losses.

C2

L1

C5

J2

C1
C2
C3
C4
C5
R1
L1
J1
J2
J3
J4

ATF-58143
S

C4
AVAGO
TECHNOLOGIES
C3

S
J1

: 2.7 pF Cap (0603)

: 1 pF Cap (0603)
: 1200 pF Cap (0603)
: 120 pF Cap (0402)
: 1200 pF Cap (0603)
: 49.9 Ohm (0603)
: 56 nH (0603)
: 0 Ohm, Jumper (0805)
: 0 Ohm, Jumper (0805)
: 0 Ohm, Jumper (0402)
: 0 Ohm, Jumper (0402)

G
C1
R1

Figure 6. Close-up of Production Test Board.

ATF-58143 Typical Performance Curves

0.7

0.8

19

0.7

18

0.6

0.5

0.4

17

0.5

GAIN (dB)

Fmin (dB)

Fmin (dB)

0.6

0.4

14

0.2
3V
4V

10

20

30

40

50

60

13

3V
4V

0.1

0.2

3V
4V

12

70

10

20

Ids (mA)

30

40

50

60

70

10

20

42

24

37

22
21

50

60

70

40

35

32

OIP3 (dBm)

OIP3 (dBm)

23

40

Figure 9. Gain vs. Ids and Vds Tuned for

Max OIP3 and Fmin at 2 GHz.

Figure 8. Fmin vs. Ids and Vds Tuned for

Max OIP3 and Fmin at 900 MHz.

25

30

Ids (mA)

Ids (mA)

Figure 7. Fmin vs. Ids and Vds Tuned for

Max OIP3 and Fmin at 2 GHz.

GAIN (dB)

15

0.3

0.3

27

30

25

22

20
19

10

20

30

40

50

60

20

17

3V
4V

18
70

Ids (mA)

Figure 10. Gain vs. Ids and Vds Tuned for

Max OIP3 and Fmin at 900 MHz.

16

12

3V
4V

3V
4V

15
0

10

20

30

40

50

60

70

Ids (mA)

Figure 11. OIP3 vs. Ids and Vds Tuned for

Max OIP3 and Fmin at 2 GHz.

10

20

30

40

50

60

Ids (mA)

Figure 12. OIP3 vs. Ids and Vds Tuned for

Max OIP3 and Fmin at 900 MHz.

70

ATF-58143 Typical Performance Curves, continued

24

23

1.5

22

22

P1dB (dBm)

18

1.0

20

Fmin (dB)

P1dB (dBm)

21
20

19
18

16

0.5

17
14
12

3V
4V

25C
-40C
85C

3V
4V

16
15

10

20

30

40

50

60

70

10

20

30

Idq (mA)

40

50

60

70

Idq (mA)

Figure 13. P1dB vs. Idq and Vds Tuned for

[1]
Max OIP3 and Fmin at 2 GHz.

Figure 14. P1dB vs. Idq and Vds Tuned for

[1]
Max OIP3 and Fmin at 900 MHz.

30

35

25

30

FREQUENCY (GHz)

Figure 15. Fmin vs. Frequency and Temp.

Tuned for Max OIP3 and Fmin at 3V, 30 mA.
20.0

20

15

20

FREQUENCY (GHz)

Figure 16. Gain vs. Frequency and Temp.

Tuned for Max OIP3 and Fmin at 3V, 30 mA.

Note:
1. When plotting P1dB, the drain current was
allowed to vary dependent on the RF input power.

18.5
18.0
17.5
17.0

25C
-40C
85C

25C
-40C
85C

16.5

10

25

15

25C
-40C
85C

10

P1dB (dBm)

19.0

OPI3 (dBm)

GAIN (dB)

19.5

16.0
0

FREQUENCY (GHz)

Figure 17. OIP3 vs. Frequency and Temp.

Tuned for Max OIP3 and Fmin at 3V, 30 mA.

FREQUENCY (GHz)

Figure 18. P1dB vs. Frequency and Temp.

Tuned for Max OIP3 and Fmin at 3V, 30 mA.

ATF-58143 Typical Scattering Parameters, VDS = 3V, IDS = 30 mA

Freq.
GHz

Mag.

0.1
0.5
0.9
1.0
1.5
1.9
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0

0.98
0.81
0.75
0.73
0.69
0.66
0.65
0.63
0.61
0.61
0.62
0.64
0.66
0.68
0.69
0.71
0.74
0.78
0.84
0.87
0.89
0.90
0.93
0.96
0.94
0.96
0.93

S11
Ang.
-17.1
-92.0
-126.4
-132.2
-153.2
-165.9
-169.3
176.3
160.7
147.4
133.8
123.7
112.5
103.7
93.0
77.2
58.3
39.7
25.1
10.2
-3.9
-20.0
-31.4
-43.9
-54.2
-65.1
-79.8

dB

Mag.

S21
Ang.

dB

Mag.

S12
Ang.

S22
Mag.

Ang.

27.29
25.25
21.87
21.18
18.38
16.74
16.40
14.83
13.51
12.35
11.28
10.32
9.41
8.61
7.84
6.47
5.14
3.77
2.55
1.25
0.19
-1.09
-2.53
-4.00
-5.46
-7.14
-8.81

23.14
18.31
12.40
11.46
8.31
6.88
6.61
5.51
4.74
4.15
3.66
3.28
2.96
2.70
2.47
2.11
1.81
1.54
1.34
1.16
1.02
0.88
0.75
0.63
0.53
0.44
0.36

168.7
123.7
103.4
99.8
85.1
75.4
73.1
61.9
50.9
40.4
30.2
20.5
11.1
2.1
-7.3
-24.8
-43.1
-60.7
-78.8
-97.1
-114.0
-132.2
-148.3
-162.8
-176.5
168.6
153.8

-40.10
-28.10
-26.12
-25.87
-24.70
-23.86
-23.65
-22.71
-21.87
-21.10
-20.45
-19.86
-19.39
-18.87
-18.44
-17.63
-17.13
-16.67
-16.21
-16.04
-15.72
-15.86
-16.22
-16.73
-17.15
-17.68
-18.36

0.010
0.039
0.049
0.051
0.058
0.064
0.066
0.073
0.081
0.088
0.095
0.102
0.107
0.114
0.120
0.131
0.139
0.147
0.155
0.158
0.164
0.161
0.154
0.146
0.139
0.131
0.121

80.8
45.7
34.8
33.4
29.4
27.4
26.9
24.4
21.1
17.7
13.5
9.3
4.9
0.7
-4.4
-14.6
-26.1
-37.0
-50.2
-64.2
-78.3
-93.6
-106.5
-118.2
-128.6
-142.4
-155.6

0.67
0.42
0.32
0.31
0.25
0.23
0.22
0.19
0.17
0.15
0.13
0.13
0.13
0.14
0.14
0.17
0.19
0.24
0.34
0.41
0.46
0.52
0.58
0.66
0.72
0.74
0.77

-12.1
-46.6
-66.7
-72.3
-90.8
-103.6
-106.0
-118.1
-133.3
-145.4
-155.7
-175.4
166.2
152.8
140.7
120.7
95.4
70.1
52.4
37.3
21.5
2.5
-14.1
-26.0
-36.3
-49.0
-64.8

MSG/MAG
dB
33.69
26.68
23.99
23.52
21.54
20.30
20.03
18.77
17.69
16.73
15.86
15.09
14.40
13.74
13.14
12.06
11.14
10.22
9.39
8.65
7.96
7.39
6.85
6.36
5.85
5.27
4.77

Typical Noise Parameters, VDS = 3V, IDS = 30 mA

Fmin
dB

opt
Mag.

opt
Ang.

Rn/50

Ga
dB

0.5
0.9
1.0
1.5
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0

0.12
0.18
0.20
0.32
0.43
0.45
0.51
0.58
0.75
0.87
1.01
1.04

0.39
0.37
0.36
0.32
0.30
0.30
0.29
0.31
0.35
0.42
0.50
0.53

17.775
46.9
53.525
80
101
107.7
125.2
154.475
-156.95
-120.93
-100.83
-97.15

0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.05
0.06
0.09
0.15
0.18

25.33
22.26
21.54
19.16
17.65
17.33
16.23
14.77
13.39
11.92
11.07
10.93

40
35

MSG/MAG and S21 (dB)

Freq
GHz

30
25
20
15

MSG

10
5
S21

0
-5
-10
-15

10

15

20

FREQUENCY (GHz)

Figure 19. MSG/MAG and S21 vs. Frequency

at 3V, 30 mA.

Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a
set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements Fmin is calculated.
Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.

ATF-58143 Typical Scattering Parameters, VDS = 4V, IDS = 30 mA

Freq.
GHz

Mag.

0.1
0.5
0.9
1
1.5
1.9
2
2.5
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18

0.99
0.83
0.76
0.75
0.72
0.71
0.70
0.69
0.68
0.67
0.69
0.73
0.76
0.79
0.82
0.85
0.87
0.89
0.91
0.93
0.94
0.94
0.92
0.91

S11
Ang.
-16.3
-94.5
-133.1
-139.7
-162.2
-172.7
-174.9
173.5
161.6
141.9
123.1
108.9
96.3
82.4
71.2
60.1
47.2
36.2
26.6
17.2
9.2
1.2
-10.5
17.6

dB

Mag.

S21
Ang.

dB

Mag.

S12
Ang.

S22
Mag.

Ang.

MSG/MAG
dB

28.16
25.82
22.52
21.83
18.94
17.18
16.79
14.67
13.05
11.00
9.29
7.73
6.16
4.74
3.63
2.63
1.52
0.38
-0.80
-2.01
-3.24
-4.43
-5.79
-6.74

25.6
19.5
13.4
12.3
8.9
7.2
6.9
5.4
4.5
3.5
2.9
2.4
2.0
1.7
1.5
1.4
1.2
1.0
0.9
0.8
0.7
0.6
0.5
0.5

169.65
125.68
104.58
100.73
85.42
75.68
73.47
59.58
46.88
28.55
10.32
-7.48
-23.78
-39.33
-55.93
-73.30
-90.53
-106.67
-121.58
-135.15
-148.98
-164.25
-59.55
170.70

-41.08
-28.95
-27.00
-26.74
-25.79
-25.25
-25.09
-24.15
-23.33
-22.14
-21.13
-20.28
-19.80
-19.32
-18.49
-17.74
-17.31
-17.12
-17.09
-17.15
-17.22
-17.36
-17.68
-17.94

0.01
0.04
0.04
0.05
0.05
0.05
0.06
0.06
0.07
0.08
0.09
0.10
0.10
0.11
0.12
0.13
0.14
0.14
0.14
0.14
0.14
0.14
0.13
0.13

81.1
46.2
33.9
32.0
26.9
24.8
24.4
21.7
19.0
14.1
7.3
-1.3
-9.7
-16.9
-26.7
-39.3
-52.2
-64.5
-75.2
-84.2
-94.3
-106.1
-119.3
-127.5

0.65
0.45
0.33
0.31
0.24
0.21
0.21
0.18
0.16
0.13
0.12
0.13
0.17
0.20
0.25
0.31
0.38
0.44
0.49
0.54
0.59
0.64
0.68
0.69

-10.17
-54.83
-76.45
-80.28
-95.17
-104.27
-106.18
-117.35
-124.85
-137.33
-42.65
158.73
125.87
104.88
83.12
61.03
41.33
22.65
6.28
-7.48
-22.78
-39.22
-53.35
-71.73

34.62
27.39
24.76
24.29
22.37
21.21
20.94
19.41
18.19
16.57
15.21
14.00
12.98
12.03
11.06
10.19
9.42
8.75
8.15
7.57
6.99
6.46
5.94
5.60

Typical Noise Parameters, VDS = 4V, IDS = 30 mA

Fmin
dB

opt
Mag.

opt
Ang.

Rn/50

Ga
dB

0.5
0.9
1.0
1.5
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0

0.14
0.23
0.25
0.35
0.47
0.49
0.55
0.61
0.78
0.91
1.05
1.11

0.38
0.36
0.35
0.32
0.3
0.3
0.28
0.3
0.35
0.42
0.49
0.53

9.7
44.4
54.0
78.7
100.7
105.4
124.0
153.9
-157.2
-120.8
-101.2
-97.4

0.03
0.04
0.04
0.04
0.04
0.04
0.04
0.05
0.07
0.1
0.16
0.19

24.85
22.21
21.51
19.21
17.71
17.39
16.25
14.86
13.51
12.05
11.14
11.14

40
35

MSG/MAG and S21 (dB)

Freq
GHz

30
25
20
15
MSG

10
5

S21

0
-5
-10
0

10

15

20

FREQUENCY (GHz)

Figure 20. MSG/MAG and S21 vs. Frequency

at 4V, 30 mA.

Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a
set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements Fmin is calculated.
Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.

Ordering Information
Part Number

No. of Devices

Container

ATF-58143-TR1G

3000

7 Reel

ATF-58143-TR2G

10000

13Reel

ATF-58143-BLKG

100

antistatic bag

Package Dimensions Outline 43

(SOT-343/SC70 4 lead)

Recommended PCB Pad Layout for

Avago's SC70 4L/SOT-343 Products

1.30 (.051)
BSC

1.30
(0.051)
1.00
(0.039)

HE

2.00
(0.079)

0.60
(0.024)

1.15 (.045) BSC

b1

0.9
(0.035)

D
1.15
(0.045)
Dimensions in

A2

A1

DIMENSIONS (mm)
SYMBOL
E
D
HE
A
A2
A1
b
b1
c
L

MIN.
1.15
1.85
1.80
0.80
0.80
0.00
0.15
0.55
0.10
0.10

MAX.
1.35
2.25
2.40
1.10
1.00
0.10
0.40
0.70
0.20
0.46

NOTES:
1. All dimensions are in mm.
2. Dimensions are inclusive of plating.
3. Dimensions are exclusive of mold flash & metal burr.
4. All specifications comply to EIAJ SC70.
5. Die is facing up for mold and facing down for trim/form,
ie: reverse trim/form.
6. Package surface to be mirror finish.

mm
(inches)

Device Orientation
REEL
4 mm

8 mm

8Fx

CARRIER
TAPE

8Fx

USER
FEED
DIRECTION

8Fx

8Fx

TOP VIEW

END VIEW

COVER TAPE

Tape Dimensions For Outline 4T

P

P2

Po

F
W
C

D1

t1 (CARRIER TAPE THICKNESS)

Ko

10 MAX.

Ao
DESCRIPTION
CAVITY

LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER

PERFORATION

DIAMETER
PITCH
POSITION

CARRIER TAPE

WIDTH
THICKNESS

COVER TAPE

WIDTH
TAPE THICKNESS

DISTANCE

CAVITY TO PERFORATION
(WIDTH DIRECTION)
CAVITY TO PERFORATION
(LENGTH DIRECTION)

Tt (COVER TAPE THICKNESS)

10 MAX.

Bo
SYMBOL

SIZE (mm)

SIZE (INCHES)

Ao
Bo
Ko
P
D1
D
Po
E

2.40 0.10
2.40 0.10
1.20 0.10
4.00 0.10
1.00 + 0.25

0.094 0.004
0.094 0.004
0.047 0.004
0.157 0.004
0.039 + 0.010

1.55 0.10
4.00 0.10
1.75 0.10

0.061 + 0.002
0.157 0.004
0.069 0.004

W
t1
C
Tt
F

8.00 + 0.30 - 0.10

0.254 0.02

0.315 + 0.012
0.0100 0.0008

5.40 0.10
0.062 0.001

0.205 + 0.004
0.0025 0.0004

3.50 0.05

0.138 0.002

2.00 0.05

0.079 0.002

P2

For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright 2005-2012 Avago Technologies. All rights reserved. Obsoletes 5989-3749EN
AV02-0672EN - June 8, 2012