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N O I I J N C O U I N I
The B&K-heci si on Model 530 Semi conductor Tester i s de-
si gned for i n-ci rcui t and out-of-ci rcui t semi conductor testi ng,
wi th speci al f' eatures for nraki ng addi ti onal tests on devi ces
out-of-ci rcui t. It uses a hi gh-current, l ow duty-cycl e pul se
techni que to test transi stors i n the presence of shunti ng
ci rcui try. and a l ow-current dri ve systern whi ch enabl es the
user to i denti fy the ternri nal s of the devi ce i n most
i n-ci i cui t tests and al l out-of-ci rcui t checks.
An excepti onal feature i s provi si on for rl easurement of
the frequency at whi ch transi stor gai n i s one or uni ty. Thi s
is the fr rating for a transistor and is applied to bipolar
devi ces.
For out-of-circuit measurements of transistor beta and
FET gm, the low duty-cycle, high-power pulse technique
provides for testing high current devices at rated current, up
to 2 amperes, without over-dissipation.
The instrument is designed for a minimum amount of
control manipulation, facilitating rapid testing of most
devices.
INTRODUCTION
SPECIAL FEATURES
l . Patented linrited-energy pulse circuit permits highly
successful use of i n-ci rcui t testi ng i n the presence of
low shunt irnpedances with complete safety for the
devi ce under test.
Six-position TEST switch sequentially connects the
device being tested in all possible configurations
nraking it unnecessary to know the device terminal
i denti fi cati on. Can be l eft i n GOOD posi ti on so that
additional tests can be made without memorizing test
posi t i on.
Base or gate lead identified by color as Test Switch is
operated when testing with HI drive. All leads of
transistor are identified when testing with LO drive.
Gate l ead i s i denti fi ed on FET' s.
4. Autornatic polarity indication to identify NPN or PNP
bipolar devices and N-channel or P-channel for FET' s.
5. A-udible tone tells when the device under test is
good
-
no need to take eyes off circuit board while
testi ns hard-to-set-at devi ces.
Measures beta of low-power and high-power transistors
in two ranges. A special 300 pSEC
,
l% duty-cycle,
high-current (1.
=
2 arnp for
0
=
200) pulsing circuit
for accurate ttsting of power transistors without
overdissipation.
Measures
&
(gain-Uandwidth product) of bipolar tran'
sistors.
Measures gm of low-power and high-power FET' s.
Both depletion-mode and enchancement-mode power
FET' s can be tested.
Measures voltage breakdown and reverse voltage leak'
age ratings up to 100V. Automatic current limiting
prevents damage to devices under test.
Has a compressed leakage meter scale, which displays a
wide leakage current range on a single meter.
Clip-on test leads make positive connections to devices
in difficult locations. Frees operator' s hands to make
further tests.
Choice of test leads or front panel sockets for
out-of-circuit tests.
6.
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8.
9.
3.
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S N O I I V J I d I f , E d S
: I I N J U I J . N I
BRIEF SUMMARY OF WHAT THE 530 WILL DO
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Transistor
Collector (case)
Base
Emitter
1. Determines good or bad transistors, FET' s or SCR' s, in-
or out-of-circuit.
2. Determines good or bad diodes in' or out' of-circuit. -
3. Identifies Emitter-Base-Collector leads of transistors.
4. Identifies gate lead of FET.
5. Indicates polarity of good devices (NPN or PNP; N or P
channel).
6. Identifies Cathode-Gate-Anode leads of SCR' s.
7. Measures all breakdown and leakage parameters of
transistors.
8. Measures lpg5 and gate leakage of FET's.
9. Measures BVggg of transistors and PIV of diodes up to
100 v.
10. Measures reverse leakage current of diodes.
1 1. Measures fr of bipolar transistors, in 3 ranges:
0-100 MHz, 0-500 MHz,0-1500 MHz.
12. Determines whether device is a transistor, FET or SCR.
13. Will test new power FET's, both enhancement and
depletion types.
HINTS AND KINKS
IDENTIFYING TRANSISTORS AND DIODES
1. Nearly all germanium transistors come in .rnetal cases,
either the tubular type with flexible leads, or in the
standard TO-5 package.
2. Power transistors in stud packages or in the TO-5 or
TO-3 can be either germanium, siliCon or FET. Two-
and three-digit 2N-numbers are mostly germanium.
3. The T0-66 power transistors and the plastic power tab
packages are nearly always silicon. The collector is
usually, but not always, connected to the mounting tab
and the center lead. This always can be verified by a
continuity check between the collector pin and the
mounting tab.
4. The base leail of most modern plastic-type transistors is
either the center lead or the right-hand lead when
facing the flat side with the leads down. In the latter
case, the collector lead is in the middle.
5. Most plastic FET's have the gate lead on the right side
when facing the flat side with the leads down and the
source in the middle, but there are exceptions. In
nearly all
junction FET's, the source and drain can be
interchanged with no adverse effects.
All transistors will have some gain with the collector
and emitter leads interchanged, with the exception of
Darlingtons.
Germanium signal diodes usually can be recognized by
their transparent hollow glass cases with either three or
four color bands, or type numbers printed on them.
Silicon diodes usually are painted because silicon is
light-sensitivg urd must be protected from ambient
tiftrt. fne
"moose"
types, such as the' stud package,
can be either germanium or silicon.
8. Power FET's in TO-3 packages generally have lead
configurations similar to bipolar transistors, with the
following comparisons :
6.
7.
FET
Drain
Gate
Source
10.
The APPENDIX to this instruction manual provides
the schematic symbols for devices tested by the Model
530. This information should be used to identify the
device prior to testing.
An extensive list of semiconductor test and operating
parameters is provided in the APPENDIX also.
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S U O I V J I O N I O N V S ' I O U I N O J
USING THE MODEL 530
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IN-CIRCIIT TESTING
CAI.]"fION
Make sure all power is turned off in the circuit
being tested, and that all capacitors are dis-
charged.
A. Transistors and FET's:
1. Set the DRIVE Switch (5) to the LO position.
2. Connect the three test leads (in any manner) to
the three leads of the device you wish to test. The
test leads must be plugged into their respective
color Test kad Sockets (6).
3. Move the Test Switch (4) slowly through its six
positions until one of the two red lamps (1) or (2),
glows. A tone also will be heard if SPEAKER
Switch (8) is ON. The lamp that glows indicates
whether the device is NPN (l) or PNP (2) or N oi
P channel. In LO drive, most transistors that test
good will do so in only one Test Switch position
(see
"THINGS
TO KNOW ABOUT THE 530"). In
this Test Switch position, all the leads of the
transistor can be identified as shown in the I-ead
Identification Window (3). Most FET's will test
good (LO or HI drive) in two Test Switch
positions having the same BASE color shown in
the IBad Identification Window (3), since practi-
cally all
junction FET's are symmetrical. The
BASE color indicated is the gate Iead of the FET.
4. If there is no good indication (neither of the two
lamps glows) as the Test Switch (a) is slowly
moved througlr its six positions, in LO drive, then
the device under test is one of the following:
a. Device with high leakage or very low gain
(-uy not function properly in circuit).
b. Device with open/shorted elements.
c. Device with excessive circuit shunting (see
"SPECIFICATIONS").
d. FET that will not test with LO drive.
5. Re-test the device, using HI drive. In HI drive,
most transistors that test good will do so in /wo
adjacent Test Switch positions having the same
BASE color shown in the kad Identification
Window. Only the base lead of the transistor can
then be identified.
6. If the device tests good using HI drive, then 4(a) or
4(d) above could be true.
7. If the device does not test good in any Test Switch
position, in HI drive,
lemove
the device from the
circuit and re-test using OUT-OF-CIRCUIT pro-
cedures.
B. SCR' S:
1. Set the DRIVE switch (5) to the HI position.
t 0
2. Connect the three test leads (in any manner) to
the tfuee leads of the SCR you wish to test.
3. Move the Test Switch (4) slowly through its six
positions until the NPN lamp (l) glows in one
position and PNP lamp (2) glows in another
position haying a different BASE color as shown in
the Lead Identification Window (3).
4. The SCR is good only if the following indications
are obtained:
a. One NPN.
b. One PNP,
NOTE: indications must not have same BASE color.
LEAD IDENTIFICATION:
a. The BASE color shown in the kad ldentifica'
tion Window (3) is the gate lead when the
NPN l amp (1) gl ows.
b. The BASE color shown in the kad ldentifica'
tion Window is the cathode lead when the
PNP (2) lamp glows.
5. If the SCR tests bad, then it should be removed
from the circuit and tested again (muy be subjebt
to excessive shunting in-circuit), using out' of-
circuit procedures.
C. Diodes:
l. Set LEAKAGE VOLTS control (14) to zero.
2. Set Test Switch (a) to top position (Green base
identification).
3. Set NPN/PNP Switch (12) to PNP.
4. Connect the blue and yellow test leads across the
diode to be tested.
5. Adjust the LEAKAGE VOLTS Control (1a) to
approximately l0 volts, as indicated on the con'
trol panel.
6. Depress the PUSH-TO-TEST Switch (13) and,
while keeping this switch depressed, rotate the
lest .
Switch (a) to each of the upper two positions.
(Green base identification.)
7. While performing step 6, observe the results on
LEAKAGE/GAIN Meter (19). The meter reading
will be approximately full scale for one position of
Test Switch (
)
while the other position of the
Test Switch will give a lower reading, depending
on the shunting effect of the circuitry. In the
position giving the highest reading, the cuthode of
ihe diode under test is connected to the test lead
having the collector (C) color in the Lead Identifi'
cation Window (3). If both positions produce
full-scale readings the diode is either shorted or
heavily shunted by low-resistance circuitry; for
example, a transient suppressor diode across a
relay
-or
a solenoid coil. In this case the diode
should be disconnected from the circuit and
re-tested using OUT-OF-CIRCUIT
procedures.
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met er ( 19) .
3. fr Tests:
Measurement of the fr parameters of bipolar
transistors is complex in theory and performance.
A detailed explanation of fr measurements is
provided in the appendix of this manual.
When measuring fr, it is important to know that,
with some transistors. the same meter deflection
may occur on two ranges, such as the 0-100 MHz
and the G500 MHz ranges. The fr of the transistor
is always the range reading that gives the highest
numerical value (in this example, the reading on
the 0-500 rimge applies).
a. To obtain reliable information regarding the
frequency characteristics of the transistor
under test, the lead identification and polarity
of the device must be known as determined in
the previous tests.
b. Insert the transistor under test into the
appropri ate fr test socket (15) or (16). The
transistor leads must properly match the
socket lead designations. If the device cannot
be made to fit into the socket provided, use
the three-lead adapter provided to make the
connections to the transistor. Note that any
additional lead length can be detrimental to
the accuracy of this test; therefore, the
three-lead adapter should be used only if
absolutely necessary.
c. Set the fr RANGE MHz Switch (17) to the
0- 1500 range and read the value on the fr
meter (18) on the 1500 MHz scal e.
d. If the reading is greater than 300, this is the fr
of the transistor under test.
e. If the observed reading is less than 300, set
the RANGE, MHz switch (17) to the 0' 500
range and observe the meter (18). If the
reading is greater than 50, this is the fr of the
transistor under test.
f . If the observed reading is less than 50, set the
RANGE, MHz swi tch (17) to the 0-100 range
and observe meter (18). This is the fr reading
of the transistor under test. The accuracy of
readings below 5 on this range is questionable.
E.
If there is a difference in readings on two
ranges where the scales overlap, the largest
absolute value for fr is the most accurate.
NOTE ON VOLTAGE AND
BREAKDOWN TESTS
All voltage and breakdown tests outlined here
eliminate the need to know the device lead
identification when beginning the test. In cases
when the device lead identification is known,
the following table indicates the connections
required for the device tests. The indicated
positions of Test Switch (4) correspond to the
uppermost for position I and the adjacent
position for position 2. Both of these Test
Switch positions have the green base identifi-
cati on i n [rad l denti fi cati on Wi ndow (3).
Connections can be made to the test leads
provided or the device can be inserted into Test
Socket (7). The required connections are
indicated by an
"X".
Where no connection is
requi red,
"NC"
i s entered.
TEST LEAD COLOR AND NUMBER
BVCpS (Collector-Emitter Breakdown Voltage
Wi th Base Shorted to Emi tter):
a. Connect transistor to the test leads or plug it
into the test socket (7).
b. Make sure the DRIVE switch (5) is in the LO
position.
c. Move the Test Switch (4) to the position
which produces a good indication, as in-
dicated by the polarity lights (l) or (2).
NOTE
If the good-bad test of paragraph
"A-1"
results
rn a good indication in two adjacent positions
of Test Switch (4), the collector can be
identified by observations during the leakage
test as follows:
o Set the LEAKAGE VOLTS Control (14)
to about 10 volts.
o Depress the PUSH-TO-TEST Switch (13)
and move the Test Switch (4) between the two
positions which gave a good indication.
r The Test Switch (4) position which gives
the lowest indicated current on LEAKAGE/
GAIN Meter (19) is the position in.which all
transistor leads can be identified.
d. Set the NPN/PM Switch (12) to the position
corresponding to the polarity light (1) or (2)
which lights.
e. Set the LEAKAGE VOLTS Control (l
)
to
zero.
i
1
!
I
{
I
l
4.
Device
Tests
Yellow (3)
Emitter
Green (2)
Base
Bl ue (l )
Collector
Test
Switch
Position
BVCES, ICpS
BVCEO, ICEO
BVCBO, t CgO
BVECS, IgCS
BVECO, Ip,CO
BVEBO, Ig,gO
X
X
NC
X
X
X
X
NC
X
X
NC
X
X
X
X
X
X
NC
I
I
I
2
2
2
t2
I
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J o l u e r u e r n s e o r u l c u x e
u B r o C
' ( . " n 9 )
r e l l r u e e q l 0 1 p e u o q s e s ? q o q l q l l \
a E e l l o i r u ^ \ o p { B a r q r o l l r u e - r o l c o i l o c a q l s t
l a u u d
o q t u o p e t u o r p u r a E u 1 1 o , r o q l
' ( 6 1 )
r a 1 a 6 1
N I V C / E C V ) V S ' I
u o p e ^ I e s q o s r
t u o r r n c
u r a 8 u e q c u e p p n s r o e s e o J c u r d r u q s e p l u n
I o J l
- u o 3
S J T O 1 E C V ) V E - I
e q t o s e e r c w , t p r o l s
p u u ( 1 ) u o 1 1 n q
I S E I - O I - H S 1 d
a q t s s a r d a q
l
. L
5
I
i
I
I
I
' q
:
- r d
I
I
i
e. d. Depress the PUSH-TO-TEST button (13) and
set the LEAKAGE VOLTS control (14) to the
specified test voltage.
Disconnect the voltmeter, if used, after the
test voltage has been set; otherwise the leak-
age current measurement will be in error.
Wi th' the PUSH-TO-TEST button (13) de-
pressed, observe the leakage current as
indicated on LEAKAGE/GAIN meter (19).
This is the 1699 value of the device under
test.
Disconnect the voltmeter, if used, after the
test voltage has been set; otherwise the leak-
age current measurement will be in error.
With the PUSH-TO-TEST button (13) de-
pressed, observe the leakage current as in-
dicated on LEAKAGE/GAIN meter (19). This
is the IpgO value of the device under test.
f.
10. BVB3O (Reverse Emitter-Base Breakdown Voltage
With Collector Open):
a. Set the LEAKAGE VOLTS Control (la) to
zeto,
Set the Test Switch (4) to the position
adjacent to that used for the BV6' ps test of
paragraph
"2"
which has the sarne*Firr color
indication in kad Identification Window (3).
Disconnect the collector lead, either by dis-
connecting the test lead if so connected, or by
bending the collector lead and inserting the
transistor in Test Socket (7) so that only the
emitter and base leads are connected.
Depress the PUSH-TO-TEST switch (13) and
adjust the LEAKAGE VOLTS Control (14)
until a sharp increase or sudden change in
current is observed on LEAKAGE/GAIN
meter (19). This is the BVegO voltage of the
device under test. This voltage can be
measured accurately by connecting a high-
impedance voltmeter across the base and
emitter terminals of the device under test. Do
not leave the voltmeter connected after the
voltage is adjusted.
12. BVBCO (Reverse Emitter-Collector Breakdown
Volfage With Base Open):
a. Set the LEAKAGE VOLTS Control (14) to
zeto.
Set the Test Switch (4) to the position
adjacent to that used for the BV6' pg test of
paiagfaph
"2"
which has the same-Fise color
indication in I-ead Identification Window (3).
Disconnect the base lead, either by discon-
necting the test lead if so connected, or by
bending the base lead and inserting the tran-
sistor in Test Socket (7) so that only the
emitter and collector leads are connected.
Depress the PUSH-TO-TEST switch (13) and
adjust the LEAKAGE VOLTS control (14)
until a sharp increase or sudden change in
current is observed on LEAKAGE/GAIN
meter (19). This is the BVECO voltage of the
device under test. This voltage can be
measured accurately by connecting a high-
impedance voltmeter across the collector and
emitter terminals of the device under test. Do
not leave the voltmeter connected after the
voltage is adjusted.
I3CO (Reverse Emitter-Collector Current With
Base Open):
This current is a specified limit at a specified test
voltage. If these values arc known, proceed as
follows:
Leave Test Switch (a) in the test position used
in the previous test.
The transistor connections are the same as in
the previous test.
If only an approximate voltage indication is
required, the panel calibration of the LEAK-
AGE VOLTS control (14) can be used. If the
exact test voltage is desired, connect a high-
impedance voltmeter to the emitter and
collector terminals of the device under test.
Depress the PUSH-TO-TEST button (13) and
set the LEAKAGE VOLTS control (14) to the
specified test voltage.
Disconnect the voltmeter, if used, after the
test voltage has been set; otherwise the leak-
age current measurement will be in error.
b.
c.
b.
c.
d.
13.
11. IBgg (Reverse Emitter-Base Current With Collec-
tor Open):
This current is a specified limit at a specified test
voltage. If these values are known, proceed as
follows:
a. Leave Test Switch (4) in the test position used
in the previous test.
b. The transistor connections are the same as in
the previous test.
c. If only an approximate voltage indication is
required, the panel calibration of the LEAK-
AGE VOLTS control (14) can be used. If the
exact test voltage is desired, connect a high-
impedance voltmeter to the emitter and
base terminals of the device under test.
d. Depress the PUSH-TO-TEST button (13) and
set the LEAKAGE VOLTS control (14) to the
specified test voltage.
a.
b.
d.
l 4
e.
S I
u r p e u r r r n o s ? s
r
r ' ,
1
p . g , r r a r t
t i i t t t r
t $ i
T t . ; Y l
e J l ^ o _ p e q t
' e l q s l T p ^ e
s r B l u p
l s e l
p u ? p e g r l u e p r
, { g a d o r d s r e c r ^ e p o q l e r a r { A {
. s l s e l
E u r r n o l o y
a q t
3 _ o
, ( u e u r s l l o ^
0 I
p e e c x o
l o u
o p
, e d . , { 1
S O l t
r o a d . ( 1 u o r l J u n f e s ? p o u r l u a p r , ( l e l r y s o d
l o u
s i
r { c F { ^ \
I E C
s o 1 e 8 u u r u p p r o ^ u o I
. p a p o e J x e
e r e
s a E e l l o l u ^ \ o p l u e r q '
J r
p a 8 u u r u p f l l u a u e u r r a d
e q u o r
' r a l a m o q
s . I E d g g y g
. e 8 e t u ? p
] n o q l l
\
' 0 t S
l e p o r y
e q l , t q u i y \ o p > l e o r q e s r e ^ o r p u B
u o r l J n p u o c o l u r u o ^ r J p e q u u c s . I E g u o r l c u n f
N O I . I N V J
' ( 6 t )
t a t a u
N I V O / a O V ) V E ' I ; o e p c s
t u E
a l u u d o r d d ? e q t u o
J A f
r q i r o i , i t F r q t p n . g
. o
r r c l r ^ \ s
u B
r E g / v r f i ' X ' ; i # 3 ^ # f f : i i . 1 , 1 ' ' l
. p
- r q d
e q u ' c
r s e r
* a
r u r r ' r * . E - c ^ i f f i ' q
i ; H f i j
- U a q
e
' 1 c e 1
u J
. s u o r l r s o d
q t ; d u r p a l s e l
J J
p o d e r u u p
e q
l o u
i l 1 , ! \ .
e c p e p e q l
, s s a l p r u E e r
i s u o r l e c r l d d u r a r r r o d - n o I t o r a l r r o d - . l g F {
r o J
p e p u o l q s r
l r
r o r { l e q ^ \ s a t u c r p u r . { l p r e u a E
a z n
p c r s , { q d e q l
' l s a t
r e p u n
I g C
o q } i 6 y a l q u p z , r u
s r _ u o r l ? r u r o J q l o u
J - l
. p e l s o l
e q o l
J E C J o
a d , { 1 a q 1 u o E u r y u e d e p
. u o r l r s o d
, l n r r * d o ' i a i n
e q l q ( O t ) q c r p r s
U / t \ d I H / U A \ d O . I
e q l e c u l d
. c
' ( 7 )
t 9 ( t )
t q 8 n
{ q p e l e c r p u r , { 1 F e 1 o d
o c l ^ e p e q l o r ( z t ) q c t p [ s
d N d / N d N
e r l ]
t e s
r { c l , { ^ , u o 1 1 r s o d ' "
;
i ? j ? y r , : l J : , X T
f i i
: t ^ : t
' l s o l
r e p u n e c r ^ e p e q l
J o
o n I B ^ S J ! I 1
o q t s l
s g q l
' ( 6 I )
r e l o t u
N I V C / g C \ 1 X V 1 I T
u o p o t e c r p
- u r
s B
l u a J J n c a E u 4 u e l e { t e l J o s q o
, p a s s a r d
' e p
( E t ) u o l t n q
r s a r - o r - H s n d
o v r q l l / t t
J
' J O J J a
U I a q
[ L r \ ] u o t u e J n s ? e r u l u a r r n c e 3 e
- r y e l
e q l a s l & \ r o r l l o i l e s u e a q s u q e E u 1 1 o ^
l s o l
e q l r a t J u
' p e s n
g r
' r a 1 e u 1 1 o l
a r i l
l c e u u o c s n
. o
' e 8 u 1 1 o l
1 s o 1
p a g r c a d s
e q l o l ( 7 1 )
l o r l u o r s J T o A E O V X V g T
e q l
r o s
p u ? ( t 1 ) u o 1 1 n q
J S A J - O I - H S 1 d
a q l s s e r d e q
. p
' 1 s 0 1
r e p u n e c n e p e q l
J o
s l B u r t u r e l r o l c a i l o c
p q u r e l l r u e o q l o f r e l o u l l o ^ e c u e p e d u r r
- q E g
?
l c e u u o c
' p e r r s e p
s r e 8 u 1 1 o a
l s e l l c u x o
e q l J I ' p o s n e q u u c ( p 1 )
l o r l u o o S J T O A A C V
- X V I I T
e q l
J o
u o r l e r q r l B c
l a u e d
a q t
o p e r r n b a r
s r u o r l ? c r p u r e 8 u l l o l e l u u x o r d d e u u , ( t u o
J I
. c
u r s ? a . , , ? s e q l e , n s u o r l c o u u ; T i i l i l , H t ' i t r i l 3
. q
p e s n u o r r r s o d
1 s a 1
o q l q ( r f i X i f f i T , T i 3 H #
. v
: s ^ \ o l l o J
s o n p ^ e s o q t r
J l
' a 8 u 1 1 o l
p e g r c e d s B s r
] u e r r n c s r q l
s u p o e c o l d
' u n o u 4
e J B
l s o l
p a u r c e d s e
l ? ] F u l l
. ( Z )
t o
1 1 )
s r U E I
{ q p e l e c r y w s ? p e u r u r e } e p u a e q s ? q , { 1 F u 1 o d
a c r l o p e q l e J n s e > [ ? t u
' S u r p a a c o r d
e J o J e g
' s d a l s
3 u r n o 1 1 o 3 a q l u l p e t u c r p u s e p e l u n l u ^ e
r e q p n J e q u ? c p o o S s l s a t q c q ^ \
I E C V
' e ^ r l c a J e p
s r
l s e l
r a p u n
l g c
e q t u e q l
' p a n r e c a r
s r u o r l ? J r p u r p o o E o u
J I
' a 1 n 7
a q t s ! ( t ) / Y \ o p u r A , \ u o r l
- B c u r t u o p l
p ? { a q l u r u ^ \ o q s r o l o r
E S V S
e q l
' ( p c u l a u r u , t s
a r e s . I E g - f
l s o t { )
' r o l o c
E S V g
a r . u ? s e q l e ^ B r . l r l 3 l q , t l u o r l r s o d q c l l r \ s
l s e l
l u e c e f p u
o & r 1 u I p o o 8 e ] B J r p u r
i l l r \
s . I g C - f
' N O
s t ( g ) q c l v r t s
U 1 I ) V E d S
a l { l
J I
p r e e r { e q
i l 1 l r r
o u o l B p u u
} q 3 [
r u , ! \
( Z ) t o ( 1 ) d u e l
' I E C
p o o E u s e t e c r p u l g t g
I e p o r u
e q l
[ t u n
( l ) q c l p r s
t s e l
e ^ o u , ( p r o 1 g
' ( l )
l e l c o S l s e ;
u r
l r o s u r
r o ( q ) s t a { c o s p ? e . l
l s e l 1 ?
s p s e l
l s a l
e q l o l e c l ^ e p e q l
l c e u u o J
' u o r l r s o d
I H
a q l o t ( g ) r { c l r ^ \ s g n
r u C
a q l
t e s
: ( r o 1 c a 1 1 o 3 o ] p e p o q s e s e g
t l t l 1 \
t u a r r n J r o t r o l l o J - r o p r u g
e s r e , r a g ) S J I I I
. g
1
' p a l s n f p e
s r e 8 u 1 1 o , r
a q ] r e l J ? p e l c o u u o c r 0 1 e t u 1 [ o ^ e q ] e ^ B e l
l o u
o o
' l s e l
r e p u n O c r ^ O p e w
J o
s l ? u r t u r e l r e l l n u o
p u u r o l J o l l o c e q l s s o r J e J o l o r u l l o ^ e c u e p a d u r r
- q a q
u S u l l c a u u o c , { q f l a l e r n c c u p e r n s ? o r u
e q u e c ^ e E u 1 1 g l . _ s l q J
' l s e l
r e p u n e c r ^ e p
e q l
J o
e a u l l o r s J c n g e q l s l s F I I
. ( 6 I )
I e t e t u
N I y C / E C y ) V E T
u o p e ^ r e s q o s r
l u e r r n c
u r a 8 u u q c u e p p n s r o o s ? e r c u r d r u q s e
I r l u n
( 7 1 )
l o r l u o c S I ' I O 1
g C V ) V E . I o r { t
l s n f p u
p u u ( t I ) q c l y ' r s
I S g I - O I - H S 1 d
a q l s s a r d e q
. p
B n l d r o s p u e r
l s e r
a q l " , f 3 i l 3 " T , " , t l r T * : # L j
. c
' ( E )
l r o p u r l A u o r l ? r u l l u e p l p ? a - l u l u o r l ? c r p u r
J o l o c e S P q ^ e I u ? S e q l s ? q q c F { r t \
, , 7 , ,
q d e t a e J f . ; d
J o
l s e l
s c J n g e q l r o J p e s n
] s q 1
o 1
l u e c u f p ?
.
u o y l l s o d a r { t o t ( l ) q c q / r \ S
} s e l
e r { t
t e s
. q
' o r e z
o t ( t I )
I o I t u o J S I T O A E C V X V i I - I
e q t
l a s
. e
: ( r o 1 c a 1 1 o 3 0 1 p e u o r { S o s u g q t l
\
a 8 u l l o n
u ^ \ o p { ? a r g r o t r e l i o J - r o p n u A a s r a n a g ) S J l l n g
. V l
' q
: s l s e J
t u E ' 7
' e
)
I
I
, ,
I
' p
' c
' q
' e
: ( s . J E C
I U U B I S
p u ? r e a o d )
t s a l
p u g - p o o C
. l
: S . I E C
' g
' 1 s e l
r e p u n e c r ^ o p e q l
J o
a n l e ^ O J I I 1 e q l s l
s t q J
' ( 6 1 )
r e l a u
N I V C / E C V X V g " I
u o p e l e c r p
- u r
s ?
l u e J J n c
a 8 u > 1 u a 1 e q l e l J e s q o
' p e s s e r d
- o p
( e
t )
u o p n q
J S E I - O I - H S p d
a r l r q q A ; J
3. IpSS Current:
Currents up to 5 milliamps can be measured below
l0 volts; the current indication is limited to 100
microamps when testing above 10 volts. Although
the Ip55 values for many J-FET' s are specified at
drai n-to-source.vol tages above l 0 vol ts, the Ip55
values obtained between 5 and l0 volts cariSe
considered accurate because the drain current
characteristic usually is constant above a few volts
(Sqf. Fig. 3). Most power FET' s will provide
full-scale readings because the IpSS values are
considerably higher than 5 milliamps. If a full-scale
reading is obtained below 5 volts, the actual IOSS
value is geater than 5 milliamps and cannot be
measured accurately with the Model 530.
2 4 6 8 1 0
Vs5- DRAIN SOURCE VOLTAGE
(VOLTS)
Fig. 3. Typical depletion mode FET characteristics.
Set the LEAKAGE VOLTS control (14) to
zeto.
Move Test Switch (4) to a position which
produces a good indication.
Set the NPN/PNP switch (12) to the position
indicated by GOOD test lights (l) or (2).
Depress the PUSH-TO-TEST button (13).
Increase LEAKAGE VOLTS control (14) and
observe LEAKAGE/GAIN meter (19). Do not
exceed 10 volts unless the FET type and test
parameters are known. A high-impedance volt-
meter can be connected across the drain and
source of the device under test to determine
the exact voltage corresponding to an ob-
served IOSS reading. Once the observed cur-
rent exceeds 5 milliamps below 10 volts or
exceeds 100 microamps above l0 volts, the
panel voltage calibration does not apply be-
cause of the built-in current limiting circuitry.
The LEAIGGE/GAIN meter (19) will read
IpSS. IpSS of FET's can range from a few
microamperes to several milliamperes, and in
some cases will be limited to 5 mA.
FET Gate l-eakage: Drain-to-Gate and/or Source-
to-Gate lrakage.
a. Note the polarity indicated by lights (1) or (2)
i n the GOOD test.
b. Set the NPN/PNP Switch (12) to the opposite
polarity of that indicated in (a).
c. Set LEAKAGE VOLTS Adjust (14) to l0
volts, approximately, or the desired test volt-
age, if known.
d. Depress the PUSH-TO-TEST button switch
(13) and move the Test Switch (4) through all
six positions and watch LEAKAGE/GAIN
meter (19). If the device is good, the meter
will indicate zero current in two of the six
Test Switch positions.
FET Drain-to-Gate or Source-to-Gate Leakage
(Junction Diodes):
a. With the FET connected to the test leads or
inserted in test socket (7) place DRIVE
Switch (5) in the HI position and operate Test
Switch (4) until a good indication is obtained.
La*p (l) or (2) will light.
b. Note the base color which appears in the l*ad
Identification Window (3). This identifies the
connection to the gate of the FET under test.
c. Set LEAKAGE VOLTS control (14) to z.ero.
d. Set the NPN/PNP switch (12) to match the.
polarity indicated by lights (l) or (2).
e. Pqsition the Test Switch (4) so that the color
associated with the gate lead is indicated as
the collector lead in the Lead ldentification
Wi ndow (3).
f. Depress the PUSH-TO-TEST switch (13) and
slowly adjust the LEAKAGE VOLTS control
(14) starting at zero and gradually increasing
until a sudden increase in leakage current is
indicated on LEAKAGE/GAIN meter (19).
The current and the corresponding voltage
have the following meaning for two types of
FET' s:
J-FET: Forward bias current and voltage
for the gate-to-channel P-N junc-
tion.
MOS-FET: The Breakdown voltage for the
combined currents of the gate-to-
channel leakage current and the
protection diode if present on
device.
Depletion Mode FET' s (low-power):
4.
I
I
,
5.
a
s
F 3
z
Llj
(E
E
l
= .
G
o
I
a.
b.
c.
e.
f.
I
' cs=0
V
/
I
- 0
2 v
l,/
t/
- 0
4 v
It
I
- 0
6v
-il
i
- 0
8v
f,
a
I
1 0 V
17I
I
I
- r
, y
7
T--------
-------
t 4 v
I
t 6
6.
L T
' ( g )
n o p u r l r u o r l u c l l l l u e p l p ? e - I o q l
w u / r \ o r { s s 3 r o l o c g s v g
l u o r o J J r D
u E u n u q u o l l s o d
r a q t o u ? u l s n o l t ( 3 ) d u e l
d N d
o q l p u e u o r l r s o d
e u o u r s n o p ( t ) d u r t
N d N
a r { t
F } u n
s u o r t r s o d
x r s s t r q 8 n o r q t , { 1 n o 1 s ( t ) r { c 1 ^ S
} s o l
e q l e ^ o r y
-
' l s o l
o l q s F \ n o , (
9 3 5
e r n
J o
s p ? e l e e r q l e q t
o 1 ( r e u u u u r , , ( u u u r ) s p e l
l s o l
e o q l o q l
l c e u u o 3
' u o r l r s o d
I H
a W o l ( S ) q c l l ^ \ s
A 1 1 a C
o q l
t o s
: s . u J s
' I I
' s l s u n u r e ]
e p o p
e q l o l r e l e r u l l o ^ a c u e p e d u l - q E F l u E u t l c a u u o c
f q p a u r u r r a l o p e g u e c e t e l l o l t e u e z
l c u x o
o q l
' p o l e c r p t n
E u m u a r
l u e j J n c
0 { t
l e
p u ?
1 s 0 1
r e p u n o c n a p 0 w
g o a 8 u l l o r t e v e z e q l s t s F 1 1
' ( 6 1 )
r a l a u r
N M
/ g C \ f X V g ' I , u o
p e ^ r e s q o s r
l u e r r n c
u r e E u e q c
u o p p n s r o e s u a r c u r d r e q s e g l u n ( p 1 )
I o r l
- u o c
s l T o n
g c v x v g T o r f ] e s ? e r c u l
' p a s s a r d
- e p
( e
t )
q c r n s
r s i l J - o r - H s n d
e { r q } t
\
N r v c / a c \ r x v i n
u o p e ^ r a s q o ; $ t l J i f i H
l u e r r n c l s e / r \ o l
a { t s a l F
l u q }
( l ) q c l l r \ s
l s e l
o q l
J o
s u o l l r s o d d o l o ^ u e q l
J o
e u o
l J o l a s
p u u ( t t ) r t c 4 , n S
I S S I - O I - H S 1 d
a q 1 a l e r e d g
' s l l o ^
s l n o q ?
o 1 ( t I )
[ o I r u o J S J ' I O A 1 I C V ) V A ' I
o q t
] o S
' q
' a p o p
a q l
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4. The SCR is good only if all the following are
obtained.
a. One NPN indication.
b. One PNP indication.
c. Indications must not have same BASE color.
LEAD IDENTIFICATION:
a. The BASE color shown in the I*ad ldeptifica-
tion Window (3) is the gate lead when the
NPN lamp (l) glows.
b. The BASE color shown in the kad ldentifica-
tion Window is the cathode lead when the
PNP lamp (2) glows.
MODEL 530 CIRCUIT DESCRIPTION
A. Test Switch
The 530 semiconductor tester uses a six-position
lever switch located at the top right corner of the
front panel. This switch is used to connect the
device being tested in the correct' manner for
testing. As this test switch is moved through its
positions, the device that is connected either to
the three test leads or plugged into the test socket
is connected in all possible configurations for
further testing. The uppermost position is the
"normal"
connection, that is the test socket is
connected in the standard triangle configuration to
the testing circuits and the blue, green and yellow
test leads are connected to the collector, base, and
emitter circuits respectively (drain, gate and source
for FET's).
In two of the six positions, using HI drive, the
device is connected properly for the basic test
circuitry. This is true since all bipolar transistors
have gain, although usually very little, when the
collector and emitter are interchanged, and most
junction FET's are symmetrical. These two test
switch positions are always adjacent and always
display the same base color in the lBad Identifica-
tion Window whenever the 530 is indicating a
good device.
In LO drive, a transistor should indicate good in
only one test switch position since limited base
drive and lower detection sensitivity allow the
detector to test the device as good only in its high
gain connection. A device that indicates good in a
single test switch position in LO drive is connected
properly for further gain testing with the Model
530.
B. Good/Bad Test Circuitry
l. The Model 530 test circuitry uses two clock
generators that produce a series of pulses designed
to test a device periodically, about seven times per
second. These short, high-current pulses are
applied to the collector (drain); the first is positive
for testing NPN/N-CH devices, followed by a
negative pulse for testing PM/P-CH devices.
During these pulses, a shorter pulse of the same
polarity is applied to the base (gate) of the device,
which drives the collector (drain) voltage toward
saturation. (See Fig. 4, pulses A and B.)
l 8
Taking a closer look at the basic test circuitry,
refer to Fig. 4 and schematic. The slow clock,
which runs at approximately 7 llz, initiates each
test period while simultaneously resetting flip-flop
I and flip-flop 2. The fast clock runs at approxi-
mately 500 Hz and controls the pulse-forming
circuits.
The pulse-forming circuit uses a combination of
toggles and RS flip-flop to produce the proper
sequence of pulses for the collector (drain) drive
circuit, and the base (gate) drive circuit.
The collector (drain) and the base (gate) drive
circuits arc level-shifting complementary drivers
which can deliver several hundred milliamperes at
+5V and
-5V,
or return to zerovolts.
A properly connected NPN or N-channel device
will see both waveforms
'A'
and
'B'
of (Fig. a).
The collector (drain) will see waveform
'A',
and
the base (gate) of the device under test will see
waveform' B' .
Note that during the positive excursion of the
collector (drain) voltage, the base (gate) is driven
first negative and then positive.
If the device being tested is NPN or N-channel, the
collector (drain) voltage will drop abruptly when
its base (gate) is driven positive. This negative-
going transition, which will only occur if gain
action is present (a good device), is differentiated
and the signal produced is used to latch flip-f[op 1
of Fig. 4.
If a PNP or P-channel device is tested, the turn-on
transition occurs during the second half of wave-
form
'A'
of Fig. 4, and in the opposite direction.
This transition (positive-going) is differentiated
and the produced signal is inverted and used to
latch flip-flop 2 of Fig.4.
Of course, other pulses appear at the differentiator
output, since all voltage transitions of pulsg
'A'
are
similarly differentiated, but the synchronized
gating circuits prevent the unwanted pulses from
reaching flipflops I and 2, thus eliminating wrong
indications.
The input to flip-flop I is enabled only during the
l .
2.
3. 2.
3.
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time period in which a NPN or N-channel device
can be detected and similarly flip-flop 2 is enabled
only when a PNP or P-channel device can be
detected. Only the flip-flop which corresponds to
the type of device being tested can be latched.
4. The outputs of flip-flops I and2 of Fig. 4 are either
+5V or
-
5V, depending on whether the device
tested was a good MN/P-channel or PIIP/
P-channel. The output from the activated flip-flop
drives a LED DRIVER which produces enough
current to turn on the corresponding front panel
indicator, the NPN/N-channel or the PNP/
P-channel LED.
When either flip-flop I or 2 is latched, the speaker
driver is activated and audible tone is heard
through the speaker, indicating a good device.
Leakage/Breakdown Test Circuitry
1. The 530 leakage/breakdown voltage circuitry uses
an externally controlled DC power supply. Voltage
and. current sensors control automatically, via
feedback, the voltage regulator that feeds the
external load (See Fig. 5 and schematic).
A four-stage amplifier circuit is used to drive a
meter driver which in turn drives the meter, on a 0
to 5 mA non-linear scale.
2. Taking a closer look at the leakage/breakdown
voltage circuitry, refer to Fig. 5 and schematic.
A voltage-adjust potentiometer is connected to a
DC power supply. This potentiometer which is the
front panel LEAKAGE VOLTS control, drives a
series regulated circuit, and it can vary from zero
to 100V. The voltage regulator is fed back through
voltage and current sensors, which automatically
contrbl the voltage and current outputs to the
external load.
3. The external load (device under test) is connected
to the voltage regulator through the polarity
switch (NPN N-channel/PNP P-channel), the lever
TEST SWITCH, and is activated when the PUSH-
TO-TEST switch is pressed.
When the LEAKAGE VOLTS control on the front
panel is turned clockwise, the external load voltage
can go up to 100V DC, but this is ture as long as
the load current is 100 pA or less. As the load
impedance drops, the voltage regulator which is
fed back through the voltage and current sensors,
starts to reduce the voltage to maintain 100 pA
through the load. This output voltage reduction
and constant current of 100 pA will continue until
the voltage across the external load drops to about
lOV. If the load impedance is reduced to lower the
external voltage below about 10 volts, the low
voltage current-limiting circuit takes over and the
indicated current on the LEAKAGE/GAIN meter
will increase to 5 milliamperes.
Further reduction of the load impedance, up to a
complete short, will reduce the load voltage to
zeto-. The vbltage regulator is currentJimited and
can deliver only 5 mA to the external load.
.ir
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Voltage
Adjust
R72
Voltage
Regul ator
o10, o11, o12
External Load
Device
Under Test
og,o12
R70,R77
Amp Stage
tc10, D14
D15, D16, D17
q
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Fig. 5. Block diagram, leakage/breakdown circuitry.
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4.
A.
MAINTENANCE AND CALIBRATION
I*akage/Gain Meter
"Zero"
Calibration
1. Turn the Model 530 power off. If LEAKAGE/
GAIN meter (19) does not i ndi cate zero, i nsert a
suitable
Screwdriver in the hole just
below the
meter and adjust it to indicate zrjro on top scale.
2. Turn the Model 530 power on, if the LEAKAGE/
GAIN meter (19) i ndi cates zero on top scal e,
proceed to step H.l f the LEAKAGE/GAIN meter
(19) does not i ndi cate zero, turn the 530 power
<iff, unplug the unit and remove the 530 bbttom
panel by removing the five screws (three on
bottom panel and two on back panel).
Plug in the unit and turn power on. Adjust the
zero control trimpot R-87 with suitable screw-
driver so that meter is at zero. Refer to Fig. 8 for
tri mpot l ocati on.
With power on, set the HI PWR/LO PWR switch
(10) to
"LO
PWR" position. Turn TRANSISTOR
BETA/FET
Bm
switch (9) to
"TRANSISTOR
BETA" posi ti on. LEAKAGE/GAIN meter (19)
should read zero on top scale; if not, remove
bottom panel of the 530 and adjust zero
p
CAL
TEST SWI TCH
( 4)
TERMI NAL STRI P TRANSFORMER
FRONT PANEL TEST SCREW
#1
trimpot R-106 with suitable screwdriver (while
holding the TRANSISTOR BETA/FET gm switch
(9) in
"TRANSISTOR
BETA" position) so that
the LEAKAGE/GAIN meter (19) reads zero on
top scale. Refer to Fig. 8 for trimpot location.
B. Leakage Circuitry Calibration
l. LEAKAGE/GAN meter (19) should be zero
calibrated as per section
"A"
above.
2. Plug the Model 530 into power source and turn
power on.
Set Test switch (a) to the top-most position. Set
NPN/PNP switch (12) to
"NPN/P-CH"position.
Connect a 5.1 KO resistor in series with a DC
milliamp meter, to the blue an yellow test lead
I
sockets (6) of the 530. (Blue socket should be
connected to the positive lead of the external
meter).
Press Model 530 PUSH-TO-TEST switch (13) and
adjust front panel LEAKAGE VOLTS control (14)
so that the external meter reads 0.9 milliamp DC.
SPEAKER
26
MAIN P. C. BOARD
Fig. 8. Bottom view of Model 530, with bottom panel removed.
F7 P, C. BOARD
1 7 ,
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u F
r g c / v r a g u o r s l s N v u r
u r n l
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J o e A o t u e r
1 o u
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l a u e d
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. . d f H , ,
o r { } u o s r e n p l J e r f i o r r ?
J I . . ' T V J d I H , ,
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r o l c e l l o J a q l , ! p u a p 1
' u o t l t s o d
. . d A l d I H , ,
s l l o t ( 0 I ) q r l l , t \ s
U / t \ d O - I / U A \ d I H l e s
. , ( 1 u u 1 o d
q g 1
. . ( I O O C , ,
e q l f q p a l ? c r y u s ?
' u o t l s o d
. . H J ' d / d N d , ,
r o
, . H J - N / N d 1 q , ,
r e e l l e o l ( Z I ) q c t p t \ s
d N d / N d N l e s
'
' u o r l t s o d
t ? q t
q ( t ) q c t p r s
l s o l
r e ^ e l e ^ ? e l p u e
' ( l q 8 q
p n
d u r e l
H C - d / d N d
r o
H J - N / N d $
a c u o p
. . q g O C , ,
s e l ? c r p u
l 1 u n
e q t
[ ] u n
s u o l l t s o d s l l q S n o q ]
( t ) t { c i l / t \ s
} s o l
e ^ o w
' ( o p
i l l t \
e E e l c u d
S - O I
r o l s r s r r s J l r e r r r o d , ( u e ) r o 1 s 1 s u ? J l r e r r r o d 3 o l s p s e l
l s o l
a o r q l a q l
l c o u u o 3
' u o r l r s o d
. . O - L ,
0 1 ( 0 I )
q c t r ^ \ s g n r u C o q l p u ? u o ( I
I )
t { c l y ' t s r e , | o d u r n l
' Z
' . . V , ,
u o l l c a s r e d s u u o l l ? J g l l u c
o t e z e q p l n o q s ( O t ) I e t e t u
N I V C / g C V X V E T
' I
u o l l u r q l p 3
u t E T e e U
{ i l H
' g ' E l g
o t r a J o g
' u o r l r s o d
F U F F o
s l l o l r o q s ? ^ \
p r r B
I #
/ r \ e r J s
1 s e 1
a c e l d a g
' s p B e l
I I B
l c e u u o c s D
p u ?
r a n o d t u o g
0 S l e p o 4
o q t E n l d u n
' g ' 3 l g
o t r a J e g
' e l ? c s
I I n J
s p e e r I e l o t u
N I V C / A C V X V 1 5
t e q l
o s r o ^ r r p ^ \ e r c s e l q B l l n s q t l ^ \
I 0 I - u
l o d u r r r l
p r 8 o q
' J ' d u I - B u I
l s n f p e ' t o u J I
' e l e c s
I I n J
p ? e r p l n o q s ( 6 1 )
, L
I e l o r u
N I V C / A C V X V 1 5
o q l
' u g g 1 l s o d
, . V I g g
U O I S I S N V U L ,
o t ( e ) q c l m s
t u 8
I A C / V I S S
U O I S I S N V U I
e q l u r n J , ' ( O ' E t g ) > [ r o ^ \ ] e u e ^ I ] s I S e I
o q l
J o . . 8 , ,
l u l o d
o l p ? e [
t s e l
a n l q e q l
l c e u u o J
' S ' E t g
0 1 r o J a g
' e p c s
d O f
u o . . 0 S , , s p u o J J e l o u e q l
l B r l l
o s
' ( u o t l t s o d
. . V I A B
U O I S I S N V U L ,
u t ( O ) q c l l ^ \ s
u r E
I i I d / V I g g
U O I S I S N V U I
o q t S q p t o q o p q / r t ) r e ^ u p ^ \ e l c s
o l q B l l n s q l p \
I z I ' u l o d u u l
p r s o q
' J ' d
u l B t u
1 s n l p e
' l o u
J I
' e l ? J S
d O f
u o
. , 0 S , ,
p ? e r p l n o q s
( O t ) I o l e t u
N I V C / g C V X V 1 I T
' u o _ J q p o d
. . V I g g
U O I S I S N V U L ,
o t ( O ) q c l p r \ s
I ' u B
I g C / V I g g
U O I S I S N V U I
u r n l
' u o
( t
t )
q c t p * s r o , u o d u n t
p r r ? o c r n o s r e n o d e q l o l q
0 S l a p o 1 , t 1
o q t S n t d
' ( O ' 8 l g )
{ r o l u e u
e I } s I S a r
J o . , J , ,
l u r o d
o t ' ( 9 )
l a { c o s
p e e l
l s e t
e n l q a q t o l u r p a E 8 n l d
e q p t n o q s q c F I ^ \
' p B e [
l s e l
o n l q e q t
l c e t r u o J
' u o r 1 1 s o d
l s o t u - d o l
e l n q e q p l n o q s ( 7 ) q c l l ' t s
1 s e ;
r e ^ { I
' u o r } t s o d
. . H J - N / N d N , ,
0 I 0 o t ( Z t ) g c t p t t s
d N d / N d N
t o s
' u o l l t s o d
. . 9 6 4 O T , ,
e q l o l
' 0 S
I a p o r y
e I I l
J o
' ( O t )
q c t p t \ s
U / t \ d O - I / U A \ d I H l e s
' g ' E l g
o l r e J a 1
' ( g - a f )
E l u t o d l s a l
p r ? o q
' J ' d
u l u t u p u ? ( 6
' E I . { )
. . C , ,
l u r o d
u e e ^ U e q p e e l B
l c e u u o c
o s p : ( 3 - 4 1 )
Z t u l o d
l s e l
p r e o q ' C ' d u . I p t u p u ? ( 6
' E t g )
4 r o m l a u
e ^ I l s l s e r
a r { l
J o . . V , ,
} u l o d
u o e l \ l e q p ? o l u
l 3 o u u o J
' g ' 3 l g
o l r e J e g
' ( q c l v r r s
u o l l n g q s n d t q t o l
l x e u
r e t u o c
a q r
l e )
p r ? o q
' C ' d
u T e t u e g l
J o 1 m q
t u o r g r e r { s ? / h
p u e
I #
^ \ a r c s
I S g I
S u r p u n o r E
l 1 e t u s
o q l e ^ o u e g
' n
' { r o / r u e u
e 4 l s l s a u ' o ' 4 9
1 r o 9 u 0 9 9 U O o t
' ( s 1 o d u F 1
E u 4 s n [ p u , ( q r o s r o l s l s e r p a x u f q r e q l t e )
6
' E l C
u l
u / r \ o r { s s 3
{ r o ^ \ } e u
e ^ I l s l s e r e l d u t s u
; l a s r n o f
p l l n 8
' t
' ( 1 a u e d
l c e d
u o o ^ u p u ?
I a u y d
L u o l l o q
u o e a q l
' s , r . e r J s
e ^ U e g l E u n o u r a r , i q )
l a u u d
u o t l o q e q l a ^ o u e r p u u
' 0 S
l a p o q
e q l E n l d u n
' Z
' 6 6 V , ,
u o l l o e s r a d
s ? p e l u r q l l e c o n z a q p l n o q s r e l e u u r e E / e E u 4 e r 1
' I
u o p ? r q l l B 3
t u E / u 1 a g , n o ' 1
' u o r l ? c o l
l o d u r r l
r o J
8
' 3 l C
o t r e J e g
' e p c s
d o l u o
V r t 0 0 6
s p ? a r ( 6 1 ) r a l a u
N I V C / E C V X V E - I
l ? q l
o s
0 I - U
l o d r u u l l s n f p u
' r a l l r p , r a r c s
a l q e l r n s q l l A 1 .
S #
d a l s
l u a d a r
p u e a c r n o s r a m o d a q l o l q
6 E g
a q 1 E n 6
' L
' 1 a u e d
t u o p o q
e t l t a l o t u e r p u e
0 S
e q l E n l d u n
' V r t
0 0 6
p u a r
l o u
s a o p r e l e t u
J I
' e l u c s
d o 1 u o
V r r 0 0 6
p u e r p l n o q s
( 0 t ) r e l e u
N I V C / E C V ) V A ' I
g t g
l e p o 4
e q l
' 9
. L
' 9
' 9
' s
' s
' v
' o
. J
Hi I Meter
Scale
NPN Socket
B
Fig. 12. Field calibration, fr circuit.
(d) Adjust R-22 for a collector current of l0
milliamperes (See Fig. 8 for location of R-22).
(e) Remove NPN Transistor and insert PNP Tran-
sistor into front panel socket labeled PNP (15)
with current meter in series with the collector
lead (See Fig. l3). Current measured should
be between 9 and 1l milliamperes for proper
operation.
PNP Socket
Fig. 13. Field calibration, fr circuit.
Calibration of I MHz, l0 MHz, and 30 MHz
oscillators.
Equipment Required:
. Frequency Counter
-
100 mV sensitivity
at frequency up to 30 MHz (B & K-
Precision Model 1801).
. Any NPN transistor with an fr of greater
than 500 MHz.
. Non-metalliccoil-adjustingtool.
(a) Tum Model 530 power on.
(b) Insert NPJrl transistor into front panel socket
labeled NPN (16).
All frequency measure-
ments are taken at TP-4. See Fig. 8 for
location of TP-4 and oscillator coils.
Pulse
Hei ght { V}
in Volts
E.
Fig. 11. Hi
p
calibration chart.
"TRANSISTOR
BETA" position, and adjust trim-
pot R-92 with suitable screwdriver so that LEAK-
AGE/GAIN meter (19) reads the recorded
"HI
p
CAL" value (found in step 6) on the
"HI
p"
scale
of the LEAKAGE/GAIN meter (19).
fr Circuit Calibration
1. Tum Model 530 off. If fr OUT-OF-CIRCUIT
meter (18) does not indicate zero, insert a suitable
screwdriver in the hole just
below the meter and
adjust it to indicate zero on the top scale.
2. Remove the Model 530 bottom panel by removing
the five screws (three on the bottom panel and
two on the back panel).
3. Turn Model 530 power on. Without any transistors
plugged into fr sockets (15) or (16), check for fr
meter (18) reading of zero for each range selected
on the RANGE, MHz Switch (17). If the fr meter
(18) does not read zero, adjust R-55 to obtain a
zero reading (Fig. 8).
4. Calibration of Automatic Bias Circuit.
Equipment Required:
.
4ny
good quality digital Voltmeter (B & K-
hecision Model 2S0).
o Any known good NPN and PNP Tran-
sistors.
(a) Tum Model 530 power on.
(b) Insert NPN Transistor into front panel tran-
sistor socket labeled NPN (16).
(c) Place current meter in series with the collector
lead. (See Fig. 12.)
5.
28
6 Z
' d g t s
p r l r r r a l r e o u ^ \ e r r s e u 6 .
' 0 0 s t - o
o r 0 t ) q c r y * ' 5 e 8 u r g
1 a g
( q )
. l a u e d
1 u o r 3
r u a u s , n a . s a a r r { J .
d o l . q r u o
o , *
, r $ l } j t J t H r ' l i $ r r " r i 6 $
C l
' 1 e u z d
l c e q
r z o u s r n a r c s o , n ; .
. { ? o d - o l - ) p o d
A 9 . J o
l n d l n o
: s a o [ [ o J s E p a ] B c o l p r v o q ' J ' d u l s t u
J o J J o l ? p s o z H I 4 l
I l ? u J a l x a J o
l n d r n o l o s
G )
e q l r u o { ( 8 E y g u 1 1 s 1 r a 1 s z u e
W 1 , r r
p e g p u e p l )
s , { e r r s S u l l u n o u p r o q
' J ' d
x r s o q t o ^ o t x o u
G )
' 0 0 5 - 0
o l ( r I ) q q l ' t l s o E u r g
1 S
( a )
' r a r l ? d
' ( 8 I )
r e l 3 t u
4
e q l J o o l o ' s
- .
u o r o q e q l
1 s a - r e a u
1 e ' u d
, 1 " r q . q 1 u 1 J i J . t i
d o l 3 q 1 u o
9 9 3 o
E u l p t e r 3 r o J
9 s ' u
l s n l w
( p )
o ^ r l
P r r s l e w o
u o l l o q a q l u I s \ 3 J J s e a r q l
o q r a
4 o r i r a r
x q
l s u u d * 6 i r o i r
. q r - " ^ o . " l i
t " l
, o r r o r e r r r c s o
* ^ T $ * : # " " 1 * l i . " , l l t l l 3 t " l
' d n p w d
r r l o l l o q e q t p w u $ o p e c e ;
l o u e d l o l l u o c
e q l
' m l ' o
o r ( l t ) q c r l t s e 6 u r g
1 o S
1 q l
q l l a s a l l
l l t ? q ]
o s J e ^ o
0 S l a p o t {
o q l u r n l ( p )
' ( 8 S - d
p u e
6 S - d
' 9 S - U
J o
u o F ? 3 o l r o J
' ( 6 )
q c l r , n s r o l c a l a s
l s a l
u r E
L ' E g : " s l
' s o
r a ' n o d u l n J ,
' t I ' E J d
u ! u ' r o q s
I f l C / V I S S U O f S I d ( V i f i
a q 1 u r o r ;
r n u
E q
s 3
- ( 9 - I )
r q t o s
r o r s F r r g r l
N a I N 0 9 I s p o I t I
- t u n o u r
a q l a ^ o u a r p u ? q o o r l " o o - . - , i i f f " i
f " l
o l
l J e u u o s
p l t B s a l r e s u ! s r o l s l s e l o ^ $
I t e u u o C
( 8 )
' ( 9 1 )
l o r l u o c 9 1 1 9 4
^ , , ^ - ,
r o l s l s o r
l l ? ' { t / I
% S +
7 J 0 2 9
a C v x v i l ' I
e q r r u o U q o r q . n o * . , 6 l
t t ' i [
( q )
e u o p u ? r o l s l s a r
n a ^ - t l l
' b s +
? J ) I
t r c '
' ( z I )
q r l ! ^ r s r o l c a r o s
r s e r
d N l d r / N d n
.
, o g o l g
I o p o w
, . " r * r r - "
9 T f S 3 ;
. / a r \
- o r - p e d
A I ; o
1 n d 1 n o
w q l ! \ e ^ B ^ r e q s
q c r g s r o l r a l . s
r s a l
u A \ d I l r / u , n a
t f f i
.
4 ; ' 1 1
e E u l c n p o r d
3 o
e l q e d u c r o l e g . n s g '
. ( s )
q c r y , r s
s r u c
.
z 4 r r r a p o w
u o ! s ! r a r d _ )
, $ | " { f 1 l i l ?
j :
: s s q c l p n s 6 u 1 , n o g o g a q 1 r u o . r ;
q l P L {
P u B q
[ r m l x r u I r u o q { ' r { e d o c s o l J . I t s o '
( T a u e d a q r r u o r g n l n c l p u o d r e d s d u c o r l t
u [ )
: h ; ; ; " ; F ; i h ; ' ; ; i i ; ; t p ; 1 " " " i q l
6
( " 1
: p a r m b e g
r u a u r d l n b g
' a ? r a l s 6
r o J
P I E o q ' C ' d
r r r ? { u
J o I ? ^ o u r a 1
' I s e l " c s J E a I l l 4 J o u o I r B l q I P J
' 9
s e J n p a r o r d a J w a s p J E o g
' J ' d ' d
. z H I
l
; T i , f f f i
T J [ , i ' & i f r i " i $ * H * ' " , i " i
i $
t " r
' ( 9 1 )
r e l a u r . 4 o r n
J o
a l e J s
' z H V l , Z ' O l
p t r B z H I r {
8 ' 6
u a a \ l a q 6 r 4 p t e r r r o ;
d o l o q l u o g g ; o E u l p u e r E r o J
8 S - U
l s n f p V
( D Z 1
1 s n f p y
' 0 0 5 - 0
o r ( l t ) q c r y t S a 8 u s g
l e s
( p )
' 4 e a d - o 1 - 4 e e d
n 9 ' ; o
1 n d 1 n o
' 4 l t \ l ? O ' l
p u e z H t r l g 6 ' u e a , n l o q E r 4 p e a r e r o ;
r o J r o t ? I l r s o z H I ^ t
I F u r o l x .
g o
r n d r n o l a g
( 1 ) I ' I
r s n h v
' 0 0 I - 0
o r ( f t ) q c l u . S o E u e X
1 o g
( c )
' t m r r l r
, J
' u o l t s r q l l e c
p 1 a 1 g
' 7 1 ' E t g
a d o c s o g l p s g
2.
(g) Being careful not to break any wires, raise the
front edge of the main P.C. board and slide it
toward the front so that the back edge clears
the transformer. Next, rotate the main P.C.
board with the front edge up with the board
in the vertical position for full access to all
components.
(h) To replace the main P.C. board, reverse the
previous steps for removal.
Removal of fr P.C. board for service.
(u) On the control panel, pull to remove the knob
and remove the mounting nut from the
RANGE MHz swi tch (17).
(b) Turn the Model 530 over so that it lies with
the control panel face down and the bottom
panel up,
(.) Remove the bottom panel by removing the
three screws in the bottom panel and- two
screws in the back panel nearest the bottom
panel .
(d) Remove the four P.C. board mounting screws
(identified with an asterick in Fig. 8) fiom the
fr P.C. board located as follows:
o
Two screws near back panel.
o
Two screws near front panel.
(e) Lift the fr board out and rotate it to a
suitable position for access to service com-
ponents.
(f) To replace the fr P.C. board, reverse the
previous steps for removal.
NOTES
30
I
' l d r r c s q n s
e q t f Q p o l s r l p u t
I B u I L u r o l
o q l o l u l l u e l r n c
J C
a q ]
J o
0 n l 3 ^ o q l
' l B u l t u r e l - i e l { u l 1
' l ? u l u r e l - r o l r e l l o c ' l B u l u r e l - a s ? q
r o J
l u e J r n r J ( I
-
c 1
' J 1 ' d 1
' J V
o t p e l r n c r l c - l r o q s
1 n d 1 n o
e q l q l l ^ \
] u o r r n c l n d u r 3 y
p u S r s - l p l u s e r $ 0 1
l u e r r n c
l n d t n o f , V
o r l l
J o
o r l e r e q l
' ( ; e p 1 u e - u o r u r u o c )
o p q {
J e J s u B J l
l u e r J n c
p r B \ J o J
l l n c J l J - u o q s
p r f r s l u t u s
-
" J q
' l u e r J n c
l n d u t
f , C
o I { } o t
} u e r r n c 1 n d 1 n o
J C
o q }
J o
o l 1 ? r e q ;
' ( l a 1 1 n u e
- u o u u r o c )
o l l u r J e J s u B J l
l u e r J n c
p J & t \ r o J r l l s l s i I J q
' , { } r u n
o l p o s s o r c o p s e q ' ( t J . I ) o r l ? r r o J s u u r }
l u e r J n c
p r ? l \ J o J
l I n c J I J - u o q s
p u 8 t s - 1 p r u s r o ] l l t u o - u o t u r u o c
o r l l
J o
( a p n 1 r u 8 e u ) s n l n p o u o q l q c l q ^ \
] B
f c u e n b e r ;
l s e ^ \ o l
o q l
' o I l B J
J e J s u u J l
l u e r r n c
f l p n g o f c u a n b e {
-
{
' a ^ u l J o
r e d g p
9
, { l e l e r u x o r d d e g o e d o l s B q l l ^ \ S u r s e a r c e p s r ( o J q )
l e q t
o s r f d l l l A I l u e l r l J J n s s I A c u 0 n b 0 4 s l q l u o q ^ \ 1 u 0 r u o r n s P o t u
g o , ( c u e n b e 4 e l { l p u e
' ( e J q )
o l l p r r o J s u e r l
l u o r r n c
p r e l r r r o J
l r n c r r c - l r o r { s
p u 8 r s - 1 p t u s r e } } r t u e - u o r u r u o c o r { 1
J o
( r p n t
- L 6 e u )
s n l n p o u e q t
J o
l c n p o r d
o q l
' f i p n
o l s e l u l
- o d e r l x a
( r a 1 1 1 u e - u o u n u o c ) o l l u r J e J s u B J l
l u e J r n c
p r B ^ \ J o J
p u 8 r s l e u s q c l q \
1 u
f c u e n b e { r o f c u e n b a r ; u o l l J s u e r l
-
I ;
' ( s s e 1
r o z H {
1
, ( p n s n ) , { c u e n b e r ; n o 1 p a g t c a d s
e
] B
e n l e ^ s l l
J o L 0 [ 0
s I o l l 3 r r o J s u u r l
] u e r r n s - p r ? / y \ r o J
l r n c r r r - l r o q s
p u 8 r s - 1 p t u s o t { l
; o
( a p n l r u 8 u t u ) s n l n p o u r a q l
r I c F { ^ \ 1 e
, { c u e n b o J J
} s o ^ \ o l
e q l
' f c u a n b a r ;
J J o l n c
' o 1 1 u r
J e J s u B J l
l u a r r n c - p r u l r r o ; ' l t n c n c - 1 r o q s ' l e u 8 t s - 1 1 u t u s
-
1
' e s u q
o q l o l u r p e l c o l u y a r u o s p q e r { ] u I s J o I J J e J , { l t r o u t r u
o r u
l e r l l
s r o l r r e c a E r e q c q c F { , ! \ t u o 4 u o f a r
V
' ( e ' g )
r a l l t u r e
' e s e q
o q l s e l e o l s r e I J J e c e 8 r e q c
J o
^ \ o U , t r e u r r d ? q J r q / y \ q S n o r q t u o 6 e r
V
' ( r ' 3 )
r o 1 c e 1 1 o c
' p e l c e f u t
a r e
s J o r J J B c , , { l t r o u t t u q c l q , t \ o l u t p u e J o } s I S u B J } ?
J o
r o } c a i l o c
3 p u B r e l l r u o u e u o o ^ u o q s o I I q c F I / " \ u o 6 e r
v
' ( q ' g )
a s e q
' e J r {
= g / ' u o t l e r a d o
J V
p u 8 r s
I I B t u s
r o g
' E C q
-
5 | ' u o r l e r e d o 3 q
r o g
' u r c E
l u e J J n c
J a l l l u e u o u r u o c
-
g l
: S U O I S I S N V U I
U V ' I O d I S
' u o r l c a J r p
0 S J 0 A 0 J 0 r { 1 u l
1 y \ O U O l
l U e J J n C
a q l S e S n ? C q C [ q A \ U O t l C U n [ J O I C n p U O C I T U O _ S
u o f p a r l d d e e 8 e 1 1 o , r
f , C
o r { I
' 3 q ' a 8 u l l o ^
e s r e ^ e r
-
U A
' l U O J J n C
p J B / ( J O J
J o
, r \ o u o q l
w l m
p o l B l c o s s B u o t l c u n f r o ] c n p u o c n u o s
e s s o r c e e 8 e l l o l
J O
o r { J
' J O ' a E u 1 1 o , r
p m ^ u o J C 1
' u o t l c u n f
p - 4 a p u t s e , { q p e g n d u e x e c l l s l r o }
- c B J ? q J
l u e r r n c - e 3 ? ] l o ^
p c l i l a u r u r f s e e q l s ? q q c r q ^ \ o c I A O p
J o l c n p u o c t t u o s e
' a 8 u s n
p o l c l J l s o J e l o l u u 1 : c l l s u o l c u
- r ? r { c
l u e r r n c - a 8 e 1 1 o l
J ? o u { u o u e S u g l t q n { x e p u u s F u l l u r e }
o r r r l S u r r r e q o c l l e p r o l c n p u o c l t u o s
V
' e p o 1 p
J o l c n p u o J l u e s
' J O I C n p U O C I t U e S
e
u F l l l / y \ s J e I J J s C e S r U q c
J O
/ y \ o u e q l { q p e u r e r r o S e J u s c I } s I J e }
- J ? J ? q C
l B l l u e s s e
O s o q ^ \ 0 c l ^ 0 p
v
' e c F e p
J o l J n p u o c l t u o s
' u o e r
e d f l - 4 e I { } o } o ^ I } E I e r
I u l t u a t o d
a l t l l s o d
B
l B
s r u o t 8 e r r o l c n p u o o l u e s a d r { 1 - 5 1 e q l u e q ^ \ s } l n s o r
q c l q / r \ i ! \ o u
l u e r r n J J o
u o l l c e J l p e q l
' u o l l c e 4 p
e s r e a e r
A \ O U
l U O J J n c
- - - - +
I
' u o r l c o J r p
o s J o A e J O q l u l
1 y \ O U
l U a J r n C
o C n p o r d o 1 s p u a l q c H , ! \ s u l q o q l
' s B I q
e s J e A e J
' u o 6 e r
e d f l - 5 1 o q l o l o ^ I l B I e r p 1 1 u o 1 o d a l t l p o d
B
] u
s r u o 6 e r r o l c n p u o c l t u e s e d f l - 4 e l { l u o q ^ \ s t l n s e r
q c l q / t \ A \ o U
l u e r l n c
J o
u o l l c o r l p e q l
' u o F c e J l p
p r B \ r o J
1 ( O U
l u O J J t l C
+ - -
+
I
' u o l l c o J l p
p J B / Y \ J o J e q l u l
^ \ o U
l u o r r n c
e c n p o r d o 1 s p u a l q c l q ^ \ s B I q o q l
' s u l q
p J B A \ J o J
' o c I A O p
J o l c n p u o c l l u 0 s 3
J o
u o 6 a r B o l l c e l u o c I e c l w r { c o t u
p u e
l u c l r } o o l e
u V
' e p o J l c e l e
6 ( ' o p o u e , ,
e e s ' r u e r 8 e l p J o C
' o c r l o p
e q l u q l l l \
s ^ \ o I J
l u e r r n c
p r u / N o J 0 q ] q c F I ^ \ o 1 o p o r l c o l o o q l
' e p o q l B r
' u o 6 a r
u l \ o p > l e e J q u u l
] u a J J n c
p e g r c a d s B
l B
p o r n s e o u a 8 e l l o l e q ;
' a E u l l o ^
u ^ \ o p l e e r q
' l u o J J n J
e s r e l e l
; o
e p n 1 r u 8 u u S u t s e o r c u t
u ? J o J u / y \ o p { e o J q
J o
u o I l ? I } I u I 0 q } p u o ^ e q c I } S I I e l
- c e r e q c
e r e d u e - 1 1 o ^ o r l l
J o
u o r 8 e r y
' u o p a r
u ^ \ o p 1 e e r q
' l u e J r n c
o s J o A e J
J o
o p n l r y S u u E u t s e o J c u l u u J o J a c u u l s l s e J
p u 8 r s - g u t u s r e l r \ o l f l u r l u e l s q n s
J o
u o t 8 e r e 0 1 e c u e l s l s o r
p u S r s - 1 e u s q 8 1 q g o u o 6 e r B t u o r ; u o I l I S u B r } s s B p o ^ r e s
- q o
s l q c I I { ^ \
J o
u o r l ? r l r u l o q l
' u o l l J u { t l
J o l J n p u o c l t u o s
p a s u r q - e s J e n e J B u t S u t r r n c c o u o u e t u o u a q d
V
' u A \ o p I B e J q
' s e t l t r e l o d
t n o q
J o
s r e r J J e c e 8 r u q c s e z r T r l n
l u q l
r o l s l s u e J l
V
' J e l s l s u u J l
r u l o d t q
l u O r J n s
p r e A \ J o J
- -
o p o q l e c o p o u B
' e c l ^ o p
e q l u F { } l ^ \ s / ! \ o u
l u o r r n c
p r e ^ u o J e q l q J I I { ^ \ t u o u e p o r l c a l e o q l
' e P o u B
: . I V u S N E C
S I I U E T . { O A U V S S O ' I C
x t c N l d d v
FIELD-EFFECT TRANSISTORS
Bm
-
common source transfer conductance. Ratio of AC
drain current to gate-to-source voltage in common source
mode.
channel. A region of semiconductor material in which
current flow is influenced by a transverse electrical field.
A channel may physically be an inversion layer, a diffused
layer, or bulk material. The type of channel is determined
by the type of maj ori ty carri ers duri ng conducti on;i .e.,
P-channel or N-channel.
depletion-mode operation. The operation of a field-effect
transistor such that changing the gate-source voltage from
zero to a finite value decreases the"magnitude of the drain
current.
depletion-type field-effect transistor. A field-effect tran-
sistor having appreciable channel conductivity for zero
gate-source voltage; the channel conductivity may be
increased or decreased according to the polarity of the
applied gate-source voltage.
drain (D, d). A region into which majority carriers flow
from the channel.
enhancement-mode operation. The operation of a field-
effect transistor such that changing the gate-source voltage
from zero to a finite value increases the magnitude of t[e
drain current.
enhancement-type field-effect transistor. A field-effect
transistor having substantially zero channel conductivity
for zero gate-source voltage; the channel conductivity may
be increased by the application of a gate-source voltage of
appropriate polarity.
field-effect transistor. A transistor in which the conduition
is due entirely to the flow of majority carriers through a
conduction channel controlled by an electric field arising
from a voltage applied between the gate and source
terminals.
gaie (G,' g). The electrode associated with the region in
which
' the
electric field due to the control voltage is
effective.
insulated-gate field-effect transistor. A field-effe ct transistor
having one or more gate electrodes which are electrically
insulated from the channel.
junction
fiunction-gate)
field-effect transistor. A field-
effect transistor that uses one or more gate regions that
form P-N junction(s)
with the channel.
metal-oxide-semiconductor (MOS) field-effect tran-
sistor. An insulated-gate field-effect transistor in which
the insulating layer between each gate electrode and the
channel is oxide material.
N-channel field-effect transistor. A field-effect transistor
that has an N-type conduction channel.
P-channel field-effect transistor. A field-effect transistor
that has a P-type conduction channel.
source (S, r). A region from which majority carriers flow
into the channel.
32
substrate (U, u) of a junction field-effect transistor or an
insulated-gate field-effect transistor. A semiconductor
material that contains a channel, a source, and a drain and
which may be connected to a terminal.
substrate
-
of a thin-film field-effect transistor. An insulat-
ing material that supports the thin semiconductor layer,
the insulating layer, and the source, gate, and drain
el ectrodes.
tetrode field-effect transistor. A field-effect transistor
having two independent gates, a source, and a drain. An
active substrate terminated externally and independently
of other elements is considered a gate for the purpose of
this definition.
triode field-effect transistor. A field-effect transistor having
a gate, a source, and a drain.
Ip
-
drain current, DC. The direct current into the drain
terminal.
IOSS
-
zerc-gate-voltage drain current. The direct current
into the drain terminal when the gate-source voltage is
zero. This is an on-state current in a depletion-type device,
an off-state current in an enhancement-type device.
15
-
gate current, DC. The direct current into the gate
terminal.
ICSS reverse gate current, drain short-circuited to
source. The direct curient into the gate terminal of a
junction-gate
field-effect transistor when the gate terminal
is reverse-biased with respect to the source terminal and
the drain terminal is short-circuited to the source termi-
nal .
15
-
source current, DC. The direct current into the source
terminal.
VBGSS
-
gtesource breakdown voltage. The breakdown
voltage between the gate and source terminals with the
drain terminal short-circuited to the source terminal.
Note:
Jh9
symbol VB65g is primarily used with junction-
glte field-effect transistors. The symbols VBCSSR or
VBGSSp' should be used with insulated-gate tiansistors
having shunting diodes or similar voltage-limiting devices.
V-BCSSp
-
forward gate-source breakdown voltage. The
breakdown voltage between the gate and source terminals
with a forward gate-source voltage applied and the drain
terminal short-circuited to the source terminal. See V65p.
V-BCSSn reverse gate-source breakdown voltage. The
breakdown voltage between the gate and source terminals
with a reverse gate-source voltage applied and the drain
terminal short-circuited to the source terminal. See
vcsR.
VDD, VG_G, VSS
-
DC supply voltage for drain, gate,
source. The DC supply voltage applied to a ciicuit
connected to the reference terminal.
VOC
-
drain-gate voltage. The DC voltage between the
drain and gate terminals.
VOS
-
drain-source voltage. The DC voltage between the
drain and source terminals.
t t ,
o p o q ] ? J
1 U O J J n C e S J e A e J
o c u e r e J a r - e 8 u 1 1 o l r o g
1 o q r u , { s
c r q d u r g ' e 8 u u r . r n r n r ' r t J , i $
p r r e
l u o r r n c
p e g r c a d s u
l n o q S n o J q l
e l ? r o d o o 1 p o s ? I q u o q ^ \
' . , { c e r n c c u
p e g t c o d s
; o
e 8 e l l o l a c u e J e J e J B s l e t r l t u J o l s l l
s s o J c u s d o l o r r o p t { c 1 q r r \ p u u c I l s I J e } J u J u q J
} u e r r n c - o 8 e l l o l
s l l
J o
u o 6 a r u ^ \ o p { ? e r q a q } u t a l e r e d o o } p e s p l q , { l e u r o u
s r q c q / ! \ e p o l p
v
' e p o l p
e c u e J e J e r - e E u 1 1 o , t
-
e p o p J e u e z
' u o r l c o J r p
e s r e ^ e J 0 q 1
u r e p o r p r a u r l c e r J o e p o r y r o l c n p u o c l u e s u q 8 n o r q l s ^ \ o u
l e q l l u e J r n c
J o
o n F A e n t l c a d s e r e q l
' l u e r J n c
e s J e A e J
-
U 1
'
u o l l c e J l p p J u , , r \ J o J 0 q 1
u l e p o r p J e r J r l c e J r o e p o r y r o l c n p u o c n u e s ? q E n o r q l s l r \ o l J
l B q l t u e J J n c
J o
o n p ^ e r r t l c e d s e r o q l
' l u e J J n J
p J B \ J o J
-
{ 1
s g o o l o u i l N g z o N v s f l ( I o l c
' s p u l t u J e l
e c J n o s p u u a l e 8
o q t u o o i t u e q e 8 u l l o n
f , C
o q J
' e E u 1 1 o , r
e c r n o s - e 1 e E
-
S C n
' Z l t " : Z n
: s r t o l l o J s e
c r l s r r o l c e r u q c
l u e J r n c - e 8 u 1 1 o l
s l l u 1
l u r o d
p e g r c e d s u
] B
p u ?
u o f e r u l \ o p { ? e J q s } I u I a l e r e d o o l p e s u l q s I
l I
u e q ^ \ o p o p
e q l s s o r r e e 8 u l l o n
J O J o
e n l ? ^ e q l
' e E e 1 1 o l
r e u a z
-
Z ;
' r e n o d
p a l u r - u t r r n t u r x u r u o q 1 u o p e s e q
l u r o d
p a g t c e d s e : V l Z 1
' e o u > I
u / $ o p l u o r q e q l r e a u
l u r o d
p e g r c e d s e : ) l Z 1
' J { Z l
p u e ) l Z l u a o / t u o q
t u r o d
S u r l e r e d o p a g t c e d s e : 2 1
: s ^ \ o l l o J s B c r l s u a l c s J u q c
l u e r r n c - a 8 u l l o l
s l r u o
l u r o d
B
l ?
p u u u o 6 e r u h \ o p > l e e r q
s l l u l e l e r e d o o l p o s ? r q s r
l r
u e q a e p o p a q l q 8 n o r q l s ^ \ o g
l ? q l l u e r J n c
e s J e A e J
J C J o
e n p l o q l
' l u a u n c
r a u a z
-
2 1
@
S i I I O N
TERM
BVcps
IcEs
BVcno
Icgo
DEFINITION
Collector-emitter breakdown voltage at a specified
current (lCgS) with the base shorted to emitter.
Collector-emitter current with the base shorted to
emi t t er .
Collector-base breakdown voltage at a specified cur-
rent (Iggg) wi th the emi tter open.
Collector-base current with the emitter open.
+V ( NPN)
-V
(PNP)
+
V( NPN)
-
V
(PNP)
BVcpo
IcEo
Collector-emitter breakdown voltage at a specified
current (ICgO) with the base open.
Collector-emitter current with the base open.
+V( NPN)
- V( PNP)
Bvpcs
IEcs
Reverse emitter-collector breakdown voltage at a
specified current (1865) with the base shorted to
collector.
Emitter-collector current with the base shorted to
collector and reverse voltage.
+V( NPN
)
- V( PNP)
BvBco
Inco
Reverse emitter-collector breakdown voltage at
specified current (IpCO) with the base open.
Emitter-collector current with the base open and
reverse voltage.
+V( NPN)
- V( PNP)
Bvpgo
IBgo
Reverse emitter-base breakdown voltage at a specified
current (IfgO) with the collector open.
Emitter-base current with the collector open and
reverse voltage.
+V( NPN
)
- V( PNP)
34
s t
S A I O N
g
^g
pi {p-typeg
,tr,r,@
b
$,-t
sTYr E2ou*
,@,
p
o4F
g
I
g
I
'O::
Uni di r ect i onal negat i ve r esi st ance br eak-
down di ode; t r i gger di ac
i l pi l - t ypo
PilP-type
Bi di r ect i onal negat i ve r esi st ance br eak-
down di ode; t r i gger di ac
i l pi l _t ype
Thyr i st or , bi di r ect i onal di ode t ype; bi - swi t ch
Graphic Symbols for
Semiconductor Devices
Li ght - act i vat ed t ype
Phot ot r a nsi st or
( N PN
- t ype)
( wi t hout ext er nal base- r e-
gi on connect i on)
Cur r ent r egul at or
PN P t r ansi st or
N PN t r ansi st or
A{-K
(]R
@
tlR
@
sTYr Er @
STYTE' O
O
\'^r
ry
a-r,
Q7
sTYr. Ero
OR
O
s T Yr E2 @
STYLET
o
sTYu2
@
Semi conduct or di ode; semi conduct or
r ect i f i er di ode; met al l i c r ect i f i er
Capaci t i ve di ode ( var act or )
Temper at ur e- dependent d i ode
Phot osensi t i ve t ype
Phot oemi ssi ve t ype
Uni di r ec t i onal di ode; v ol t age r egul at or
Uni j unct i on t r ansi st or wi t h N- t ype base
Bi di r ec t i onal di ode
36
L T
' a .
.
: , w
i s
{ '
- , . " q
. t :
$ ;
' * d . f
' i * : j
* * ,
. : i : i : :
* .
1 f f
f r
s
, k ,
i $ . , i . '
q
. , , f f i .
s
r @
#
{ , 8
. d * :
f f i
# .
f r F
' . . * . i : , .
l #
#
;
*
. T ;
, { h
E
r . l
. r W
i .
{ h r
u
q
( a d A t - p
6 5 )
t o g s t s u e r l o l o r . . l d
e l e O u o t l c u n t
l a u u e q c - 3
l 0 u u e L 4 c - d
t l l r M r o l s l s u e . r l ] c a ] ] o - p l a l l
L l c ] r M s p a t e 0
: c e r J l : o d A l - o p o u l
l e u o t l c a J r p r q ' r o l s t J A q I
a d A l
1 ; o - u r n ]
o l e g
a l e 0 e d A l - ;
' r a r l r l c o l
p a l l o r l u o c i o l c n p u o o r u r e s : a l e O e d A l - 4
' a d A t - a p o r . r t
0 u r 1 c o 1 q - a s r a n e r ' r o i s u A q l
a d A l g o - u r n l a t e g
a t e 0 a d A l - N
' l a r l r l c a l
p a l l o l l u o c . r o l c n p u o c r r . r e s : a l e O a d A l - p
' e d A 1 - e p o r r l
0 u r 1 c o ; q - o s r a n a r ' r o l s r r A q l
a c r l a p
l e u r u r o l - o A ! ] ' a t e O - o n n ' a d A t
- l u a u r a c u e q u a ' e 1 e 6 - p e l e l n s u t
l a u u e q c - f "
a c r A a p
I
e u r u r . r a l - r n o l ' p o l e u r u r a ]
A l l e u r a l x e a l e r l s q n s ' a i e O - e l 0 u r s ' e d A l
- l u a u l a c u e q u e ' e 1 e 0 - p a l e l n s u r
l o u u e q c - [ .
o c r n a p
l e u l u r e l - a n r l ' e 1 e 0 - o n n t ' a d A t
- I U a r r t o c u e L l u a ' e 1 e 0 - p a l e l n s u r
l o u u e q c - d
a c r A a p
l e u
r u l l o l - a A r I ' e l e 0 - o n n l
' a d A l - u o r l a ; d a p ' a t e 0 - p a l e l n s u r
l o u u e q c - N
a c r A a p
l e u
| [ J . ] r a ] - J n o ]
' p a l e u
I u l r a l A ;
;
e u r a l x a a l e r l s q n s ' 4 1 e 6 - a 1 0 u t s
' a d A l -
u o r l e p d a p ' a t e 0 - p a l e l n s u r
l o u u
p r . l c -
N
' o ' - ' ^ t
' O ;
a c r A o p
I
e u r u j l o l - J n o ] ' p a l e u t u l l a ]
A 1 ; e u r a l x a a l e r l s q n s ' e 1 e 6 - e ; 0 u r s ' a d A 1
l u a [ ! a c u e L ] u a ' e 1 e 6 - p a ] e l n s u r
l a u u e q c - d
a 3 r A o p
l e u r u | a l - a a j L , l l ' o c j n o s
o l
p a l e u r u r i a ] A 1 ; e u r a l u r a l e J l s q n s ' a 1 e 6 - e ; 0 u r s
' e d A l - u o r l e l d a p ' e t e 0 - p o l e l n s u r
l a u u e q c - N
a c r n a p
l e u r u r a l - a n
r J
' a t e 0 - o n n t
' a d A l -
u o r l a l d a p ' a 1 e 6 - p a l e l n s u r
l o u u e q c - d
a c r n o p
l e u r u i l a ] - J n o J
' p a l e u r
u ; r a l A ; 1 e u r e 1 x e a l e l l s q n s ' a 1 e 0 - a 1 0 u r s
' e d A l - u o r l e l d a p ' a t e 0 - p e l e l n s u r
l a u u e q o - d
o c r n o p
l e u t u j i a l - a a t q l
' a 3 l n o s
o l
p a l e u l u . u o ] A ;
;
e u r a l u r a l e r l s q n s ' a 1 e 0 - a ; 6 u r s
' a d A l - u o r l e l d a p ' a 1 e 6 - p a l p l n s u t
l a u u e q c - d
a c r A a p
l e u r u l l a l - a a r q ] ' a l e 0 - a ; 0 u r s
' a d A l - u o r l e l d a p ' a 1 e 0 - p a t e l n s u r
l 0 u u e q c - N
a l e O u o r l c u n t
; e u u e q c - 5
l a u u e q c - N
q t l n n r o l s r s u e J l l c o ] l o - p l o t J
a c r n a p
l e u r u l l a ] - o a t q t ' e t e 6 - e ; 6 u r s
' a d A ] - u o r l a l d a p ' a g e 0 - p a l e l n s u r
l a u u e q c - d
s a c l n e o r o l c n p u o c r u a s
r o l q o q u ^ s c r q d e r g
e s e q e d A y - 6 q l r n n J o l s r s u e r l u o r l c u n f t u l
fr EXPLANATION
tr is one rnethod used to nleasure and define tl' re
hi gh-frequency characteri sti cs of a transi stor. Each i n-
di yi dual transi stor has a l ow-frequency current gai n. Thi s
current gai n i s constant from DC up to some frequency
deternri ned by the transi stor characteri sti cs. Thi s i s the
transi stor cut-off frequency (fc) and i s defi ned as the
frequency at whi ch the current gai n i s reduced 3 dB (.707
tinres the low-frequency current gain). At frequencies
greater than the cut-off frequency. the current gain
decreases at a rate of 6 dB per octave. (The current gai n i s
divided by 2 each tirue the frequency is doubled). This is
i l l ustrated i n Fi g. l 5 for transi stor A at frequenci es greater
than I MHz where the slope is negative. The highest
frequency at which the transistor can actually provide
current gain is the frequency at which the current gain has
decreased to a val ue of one. Therefore, l et us cal l thi s
frequency fr, according to the following definition:
DEFINITION OF fr
fr is the frequency at which the current gain
of the transistor is equal to one, with the transistor
in the common emitter mode and the collector
shorted (AC) to the emi tter.
The above description of current gain versus frequency
characteristics of a transistor can be represented by the
following mathematical equation :
po
a -
lJ
Let
P=',*Jt*;ffi:t'
l x f = p o x f c = f r
Thus, from definition, fr is the frequency at which
current gain is one, or unity, and the above equation shows
that fr is equal to the product of the low frequency current
gain tirnes the cut-off frequency.
Fig. l5 shows three examples of transistor current gain
versus frequency characteristics. It is interesting to observe
that the low frequency current gain of transistor B is less
than that of transistor A, but transistor A has a lower
cut-off frequency than transistor B; therefore, the fr of
both transistors can be the same although the cut-oif
frequencies of the transistors are different.
Fig. 15.
p
versus frequency ro, tjinrirtors A, B and C.
Tr ansi st or Af r =poxf c= l 00x l MHz
=
l 00MHz
Tr ansi st or B f r =0o x f c
=
50x2MHz
=
100MHz
Another example is transistor C which has a low-
frequency current gain that is less than the other two
transistors, but, because of its high cut-off frequency, its fr
is greater than that of the other two transistors.
Transi stor C fr
=po
x fc
=25
x 15 MHz
=
375MHz
Taken from a previous equation, when the frequency is
much greater than the cut-off frequency:
f r = 0 x f = 0 o x f c wh e n f l f c
Thus, a practical method for measuring fr is to measure
the current gain at a frequency greater than the cut-off
frequency, and then multiply current gain times frequency.
This method is used in the Model 530 for three different
test frequencies as follows:
U
J
(,
po
f
r +-lT-
p
=
current gain
go
= low frequency
current gain.
Therefore, at frequencies
frequency:
- @
!)
l ' c
f
-
frequency
fc
=
cut-off frequency
much less than cut-off
At frequencies much greater than the cut-off
frequency:
p o x f c
-T--
Bo
P
=
-T=
Po
Ao
t ) -
,J
f
-
f,
9=17. 7 l - 3dB)
38
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n l o d r q )
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WARRANTY SERVICE INSTRUCTIONS
1. Refer to the MAINTENANCE section of your B & K-Precision instruction manual for
adjustments that may be applicable.
2. Defgctive parts removed from units which are within the One Year Limited Warranty
period. should be sent PREPAID to the Service Department listed below. Be sure to
state the model and serial number of the unit from which the parts were removed and
date the unit was purchased. These parts will be exchanged at no charge, under the
terms of the Warranty.
3. lf the above-mentioned procedures do not correct the problem you are experiencing
with your unit, pack it securely (preferably in the original carton or double-packed).
Enclose a letter describing the problem and include your name and address. Deliver to,
or ship PREPAID ([IPS preferred) to the nearest B & K-Precision authorized service
agency (see list enclosed with unit).
If your list of authorized B & K-Precision service agencies has been misplaced, contact
your local distributor for the name of your nearest service agency, or write to:
Service Deportment
B & K-Precision Product Group
DYNASCAN CORPORATION
2815 West Irving Park Road
Chicago, Illinois 60618
40
' l u o t u d r q s
u t e 8 e u e p p r o ^ e o t p e 8 e l c e d { p e d o r d ' 8 I 9 0 9 s r o u q l l ' o 8 e c r q 3 ' p e o 1
V u 6
3 u n r 1
t s c ^ \ s I S Z ' a r l ^ r e s N O I S I J a U d - ) ?
g o l
l r u n
a q ] p u e s e s u a l d
' f 1 p c o 1
p e u r c ] q o e q l o u u u c
a J I A r a s , { l u u r r e , , n l l
' r o } J [ J ] u o J
e J r A J e s l s a J u o u e q ] o ] n o { r e J e r u 8 c J o s r r e d e r e { B u o } p o z u o q } n E
a q , ( u u t o q , t r
' J o l l l q l J } s l p
N O I S l f , g g d - ) 1
g r n o , i
} J e l u o c
n o f
1 s e 3 3 n s o / r \ c c u o r u o ^ u o c r n o { r o g
' e l E l s
0 1 e l u l s
u t o r g , { r e n q c l q , t t r s l q 8 t r r a q l o o ^ e q o s l , { e u n o { p u e s l q 8 u c r j r c e d s n o { s a l t 8 { l u e r r e r n s r q ;
' n o f
o 1 f l d d e
l o u
f u t u u o t s n l o x e r o u o r l u l n u l e ^ o q e e q ] o s
' s a 8 u u e p
l u t l u a n b a s u o c
J o
I e l u e p r c u r J o
u o r l c l n u q , / r \ o l p l o u
o p s e l u l s e t u o s
' a s n
J o
s s o l u o r j S u q l n s e r s e 8 e u e p
u o r l u l n u r l
] n o q t l ^ \
S u r p n l c u r
' s e 8 e u r u p
l e y l u a n b e s u o c
. , { u e r o J o l q e t 1 e q
} o u I I r { s N V f , S V N A 6 1
' p a ^ o r u e r
r o p a c q a p
' p a r a l p
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p l o ^ s t 1 1
' s r n d a l
r o s u o r l u J a l l e p e z r J o q l n s u n
J o l l n s e r
s s s r o
l c n p o r d
a q l
J o
a s n q u r o a s n s l u
J o l u a ^ e
e q l u ! { 1 d d e
l o u s a o p , $ u e r r u , n s l r l l : s u o r s n p x g
' e s e q c r n d
J o
e l s p o r { } r u o r 3 ( s f s p
S )
o ^ U u r q l k r \
9 9 9 0 9
s r o u q l
' o 3 e c t q 3 ' 0 8 0 S 8
x o g
' O ' d ' N O I S I J S U d - )
?
g
' N V J S V N A C
o l p r e o u o r l e r l s d e r f t u u r r s l n p e s o l r u o
e q ] S u u r e r u p u u S u t l a l d u o c , { q p a r a l s t 8 a r a q
} s n t u l c n p o r d s r q }
' e S u r a n o c
, { l u e r r e r n u r e } q o o I
' l d t e c e r
s e p s e
J o
u J o J e q ] u l e s e q c r n d
J o
o i u p o q l
J o
g o o r d f q p e u e d u o c c e
' l u e t u l r e d e p
e c n r e s
A r o i c e ; e r { l r o r o } c e r } u o 3 e c t n r e s
N O I S I f , : I U d - X T
g p e z r r o q } n e u e o t { r e n r l e p u o d n s l r e d
l u e u o d u r o c
r o
l c n p o r d e ^ r l c o J o p
' u o r l d o
s l l
l p
' e c e l d a r
r o n e d a r
' e 8 r e q c
l n o q l p \
' r u / \ {
N V f , S V N A C
' e s u q c r n d
J o
e l ? p o q l t u o r ; r u a f e u o g o p o r r e d u
r o J s l u l J e l u u p u e d t q s u e u l r o l \ u I s l J e J e p u o r 3 e e { a q
r u / t \
' J o e J e q l
s l r e d
l u a u o d u r o c
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' l c n p o r d
N O I S I J S U d - ) ?
g s t l
l e q l
r e s e q c r n d p u t 8 u o e q l o l s l u e r r e ^ \
N O I I V U O d U O J N V f , S V N A A
A I N V U U V M U V A A - E N O
( I A I I H I I ' I
$
. r . i
# {
$ N
$
: ? l
, - l '
*
I
: l
I 0 0 - 6 - 9 0 2 { 8 t
9 8 9 0 9
s l o u l l l l
t e e r l s
P u D l u o J
N O | l V U O d U O f ,
' l
, o 6 ? r j . { f , * .
- - ' : { | q 6 ' : J "
' r V l
0 9 t 9
N V f , S V N A q
SCHEMATIC
SYMBOL
R85
R79
R83, 81
Rl 21
R101, 55
R22,97
R72
R92, 106
R56, 59
RI 03, 58
c44
c42
c39, 39, 40, 41
c20',25
c56, 57
, 47,
50, 49
c56,46
c43
B & K.PRECISION MODEL 530 PAR.TS LIST
488- 195- 9- OO3
DESCRIPTION
B & K
PART NO.
RESISTORS
& CONTROIS
g-lKo,
!2%,r/qw,
Deposited Carbon
002-039-9{0
L3Ko,
y2%,y;W,
Deposited Carbon
002{40-9{0
18KO, !2%,y4W,
Deposi ted C:rbon
002{41-9{0
199_KO,. ?0%, /eW,Horizontal
Mount Linear Trimpot . 008-2 1 6-9-00
qg!{o,
$9Vo,laW,Horizontal
Mount Linear Trimpbt . .009-224-i{0
lg$sffl, P9Vo,
W, Hotizontal Mount Linear Trimirot . . 008-241-9-00
30Ksl ,
+\ 07o, r/ zW, Li near
C: rbon Pot . . . . . . . . . 008-301-9{0
I_0_0KQ,- P.0
7.o'_!:Y, Horizontal Mount Linear Trimpot . 008-286-9{0
?!ta,P0_V9,lcW,Honzontal
Mount Linear Trimpot . . . 00g-297-9-00
IKdl,,!20%,/cW,Horizontal
Mount Linear Trimiot . . .008-289-9{0
CAPACITORS
lQy.f
@I,iOVDC Electrolytic
. 021{40-9{01
l9Q{r@_10VDC
Electrolytic
. 022{50_t{0i
1Q09qr
@25VDC Electrolytic
022084-ri0r
47p,t@6.3vDcTantal um-
...027-013-9{01
|
.orur
@ 250vDc
polyester
. .025427-9-001
.9474@?J0V
Pol yester
....025-096-9{01
. | pt @l 00VPol yest er . .
. . . . 025- I 2O- gOOi
coIIs
Osci l l at or, I MHz
. . . . 044-035-9{01
Oscillator,
lg
MHz
. . .044{36-t{0i
Osci l l at or , 30MHz
. . . 044{ 39- g{ Oi
coltrPosrrE
499-n4-9-ml
L1
L2
L3
MODEL 530 PARTS UST
SCTIEMATIC
SYMBOL
Dl 4, 15, 16,
r 7, 24, 25
D19, 20, 21, 22,
23, 3I , 33, 34,
3 5 , 1 , 2 , 3 ,
13, 18, 32
8D4, 5, 6, 7r L0,
I t , 27, 28, 30
D9, 10
D12,26
Q9, 10,
I r , 12
Q4, 5
Ql ,
2, 3, 14,
1 7 , 1 8 , 1 9 ,
22, 24, 29
Q13, 20, 21, 23,
25, 26, 27,
28, 16
Ql s
l
l
)
DESCRIPIION
DIODES AND TRANSISTORS
B & K
PART NO.
I N695, Germani umDi ode
. . . 150{02-9{01
IN4148, Si l i con Di ode
. 151-038-9{01
Rectifier Diode
. 151{50-9{01
5.1V, {Vo,IW Zener Di ode
. 152-030-9-001
l 2V,!5%,1W Zener Di ode
. . 152{39-9{01
2N5550 NPNTr ansi st or
. . . . 176133- 9{ 01
MPS 2369 NPN Transistor .
. . tZ6{49-9O01
MPS 6515 NPN Transistor . . . 126-050-9{01
MPS 6519 PNP Transistor
. . . t77-OtS-9-001
SPS-2306 NPNTransi st or.
. . . t 76{. 29-9-001
INTEGRATED CIRCI,IITS
LM324,
Quad
OP-Amp
307-060-9{01
4013, Dud D Flip-Flop
307-062-9{01
4011,
Quad
2Input Nand Gate . . . . 307-063-9-001
40z3, Tri pl e 3I nput Nand Gat e . . . 307470-9{01
SWITCHES
Iradl denti fi cati on,hver
....080{02-9401
Spring Return, Rotary .083-195-9-001
fr Range, MHz .
.083-205-9{01
SPDT, Slide
(Speaker
ON/OFF) . . .084-001-9{01
DPDT, Slide
(Power
ON/OFF) . . . .084{01-9{03
DPDT, PC Slide,
(Drive
LO/HI) . . . . 084{43-9-001
i$|T: 33!il$! S'*l/H'*,' : : : : : : . : : : : : : : : : : :1084{4se{01
Momentary4-Pol e,Push-Button
...088-029-9-001
IC1, IC6, ICg, ICl 0
rc3
lc2,rc4,Ic7,Icg
IC5
S9
s4
S1
s3
S8
s2
s6
s7
S5
I 0 G d - 8 r I - ( , 5 '
' '
f l q u a s s y t n 1 4 r o l s r s u u r l
I 0 0 6 - 9 U g r S t E " '
. . . . d l q S l u u t u r e l
I 0 0 . 6 - c 0 D 0 1 g ' . .
a r o J a l F r a c
I 0 0 6 - 0 I & 0 ( , t . . .
p r o J e u n
9 0 0 5 - I 0 e t L L '
' '
{ c ? f
s t t e u ? g ^ r o i l e 1
t 0 0 6 - I 0 O t L L '
' '
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NOTE: Standard value resistors and capacitors are not listed. Values may be obtained from
schematic diagram. Minimum charge
$5.00
per invoice. Orders will b shipped C.O.D. unless
previous
open account arrangements have been made or remittance accompanies order.
Advance remittance must cover postage
or express charges. Specify serial number when
ordering replacement parts.
B & K-PRECISION. DYNAIrcAN
CORP.
o
646014r. Cortland St.
o
616*, Illinois 60035
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