Contents

INTRODUCTION ................................................................................................................................................... 2 OPERATIVE PRINCIPLES AND LIMITATIONS ......................................................................................................... 2 A. B. C. Thyristor .................................................................................................................................................. 2 GTO & IGCT .............................................................................................................................................. 3 IGBT ......................................................................................................................................................... 3

SPECIFICATIONS AND COMPROMISES................................................................................................................. 4 DRIVE CIRCUITS, POWER SHARING AND PRACTICAL APPLICATIONS .................................................................. 6 FUTURE PROSPECTS ............................................................................................................................................ 7 CONCLUSION ....................................................................................................................................................... 7 APPENDIX I: Elaboration of Device Physics .......................................................................................................... 9 APPENDIX II: Explanation of Datasheet Terminology ........................................................................................ 11 REFERENCE WORKS ........................................................................................................................................... 12

Report Statistics Main critical text of this report contains a total of [1545] words; this excludes content matter of headings, figures, data tables, footnotes, appendices and bibliography pages. The report additionally contains: [11] figures in main text [04] tables in main text [02] appendices containing supplementary information [31] bibliography references

AUTHOR: Muhammad Ali Qaiser MODULE: Power Electronics ELEC6125

STUDENT ID: 26561999 COURSEWORK#1: Thyristors

INTRODUCTION
The thyristor was patented in 1956 by John Moll at Bell Telephones research and subsequently commercialized by GE [1]. It is arguably the most powerful semiconductor switching device invented, with power capacities in orders of magnitudes of tens of MVA [2]. Subsequent development has expanded the thyristor family to next generation devices such as GTO, IGTC and IGBT to offer better gate control or switching frequency. This report investigates the operative principles, characteristics and structural limitations of these switching devices. It then reviews specifications, parametric compromises1 and associated practical circuits. The work concludes with a view of prospective direction that the industry is expected to take.

OPERATIVE PRINCIPLES AND LIMITATIONS

This section will present a summary of device function; for further elaboration of junction physics, the reader is directed to Appendix I.

A. Thyristor
The simple thyristor is a half-controllable2 version of a simple rectifying diode (hence also known as SCR3). Made up of four alternating p-n4 layers (Error! Reference source not found.), its operation is explicable in

LEGEND A anode K cathode G gate px p layer nx n layer Jx bipolar junction base transport coefficient Ix sectional current
Figure 1: Layered Structure of SCR Figure 2: BJT Equivalence of SCR

terms of regeneratively-coupled BJT5 pair (Error! Reference source not found.). The device will only turn on when forward-biased (across VAK) with gate pulse (IG) applied for a specified minimum duration; conversely, it will not turn off by removal or reversal of gate pulse. The indicative i-V curve for a simple thyristor is shown in Error! Reference source not found.. It is observed that as gating current signal is intensified (higher electron injection), the forward break-over voltage (VBO) decreases i.e. a lower value
1 2

Example being power carriage traded off for higher frequency switching Switched on by control pulse, but not off 3 Silicon Controlled Rectifier 4 Positive-Negative doped semiconductor layers 5 Bipolar Junction Transistor

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Figure 3: i-V Characteristic of SCR

AUTHOR: Muhammad Ali Qaiser MODULE: Power Electronics ELEC6125

STUDENT ID: 26561999 COURSEWORK#1: Thyristors

of VAK is required to switch on the device beyond latching current (IL). A dVAK/dt rise greater than critical value can cause spurious firing of the thyristor.

B. GTO & IGCT

The GTO6 is a fully-controllable switch, as it overcomes the turn-off limitation of thyristor by allowing a negative gate pulse to extinguish device function [3]; it was introduced into the market around 1961. While structurally a GTO has the same 4 layers as a thyristor, a high intermeshing7 of layers is done to minimize gate-to-cathode distance. The current and voltage curves for GTO operation are illustrated in Figure 4. Cathode current Ik is smaller than anode IA due to differential diversion towards IG. In addition, there is a co-existence of IA and VAK during turn-off, which can introduce danger of retriggering. Therefore, to assure proper switch off, snubber capacitive circuits are used with GTO. Even faster turn-off times are achieved with a variation of GTO called IGCT8, which has lower Figure 4: Operative Zones of GTO (adapted from ABB [14]) gate inductance resulting in elimination of minority carrier injection and losses during turn-off. For turn-off, the device withstands a high current rise rate di/dt and therefore does not require snubber circuitry [4].

C. IGBT
The Insulated-Gate Bipolar Transistor is often viewed as a hybrid between MOSFET and BJT, combining the high switching frequency capability of the former and higher power carriage capacity of the latter (see Error! Reference source not found.). It is a later invention of the devices discussed earlier, being commercialized in early 1980s after proposal by J. Baliga et al [5]. Structurally, the IGBT builds an additional p-layer at drain side of a MOSFET [6], lowering resistance of adjacent n-layer by holes injection. Increased conductivity permits lower on-state voltage compared to MOSFET.

C E G

Collector or Drain Emitter or Source Gate

Figure 5: Layered Structure of IGBT

6 7

(adapted from Siemens [6])

Figure 6: BJT-MOSFET Equivalence for IGBT

Gate Turn-Off thyristor Concept termed interdigitation 8 Integrated Gate-Commutated Thyristor

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AUTHOR: Muhammad Ali Qaiser MODULE: Power Electronics ELEC6125 An inherent (parasitic) thyristor is evident from Error! Reference source not found.. It can be suppressed by adding a modified, low-resistivity n-layer buffer after the p-layer at collector side; however the heavy doping this introduces means loss of reverse-block capability. Investigation of output characteristics (Figure 7) presents similarity to BJT with the difference that conduction gain is controlled by gate voltage, not gate current [7].

STUDENT ID: 26561999 COURSEWORK#1: Thyristors

SPECIFICATIONS AND COMPROMISES

The thyristor family of devices have several OEMs, of which are considered here9 Infineon [8], Powerex [9], Vishay [10], Mitsubishi10 [11], Fuji Electric [12] and Toshiba [13]. Figure 7: i-V Characteristics of IGBT (adapted from EPE [7]) The operating range observed from datasheets was impressively diverse (see Table 1); Infineon for example, offers IGBT from 600 V, 1 A up to 6,500 V, 1500 A. A summary of select datasheet values11 is presented in Table 2 to Table 4. The reader is directed to the Appendix II for technical elaboration of parameters. A critical examination of the specifications reveals several interesting observations: 1. GTO is available through less manufacturers; instead IGBT seems a more popular alternative 2. SCR modules are not recommended for high-speed inverter switching; they are instead used more often for phase control 3. For similarly rated devices, the package size is identical between brands 4. Descending order of power capacity appears to be SCR > GTO > IGBT 5. Thyristor switches come in rectangular as well as puck shapes, mounted directly on to heat sinks 6. Powerex appears to offer lower switching losses (Eon, Eoff) than Infineon, whereas the latter provides larger current handling (ITSM, i2dt) for stated voltage level 7. Switching times are best for IGBT; whereas GTO allows quicker turn-off compared to SCR (forced pulse vs. natural commutation), it suffers from requirement of a greater turn-on gate pulse. 8. IGBTs have lowest thermal resistance to heat sink Some of these observations can be readily explained by referring to device physics. For example, turn-off response of GTO is improved by limiting BE12 gain () of anode-side BJT (see Figure 2); the anode side p-layer is intermeshed with islands of n2-layer material that assist in hole absorption during switch-off. This construction is called anode-shorting. Unfortunately, this feature limits the reverse-block voltage to very low values, unlike SCR. Island segmentation of GTO cathode also makes it equivalent to numerous parallel thyristors with a common gate and anode [14]. Because of this, namely that several thyristors need to be fired simultaneously, a GTO requires higher gate pulsing than a comparable SCR.

Based on a somewhat arbitrary survey of market presence, available components, history and quality awards Mitsubishi is parts supplier for Powerex, which in turn is a solution provider 11 Similar ratings for comparison between manufacturers; it should be noted that some specifications are not readily published by OEMs (marked N/A in tables) 12 Base to Emitter
10

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AUTHOR: Muhammad Ali Qaiser MODULE: Power Electronics ELEC6125 Device IGBT IGBT IGBT IGBT IGBT IGBT SCR SCR SCR SCR GTO Device Manufacturer IGBT IGBT IGBT Device SCR SCR Infineon Powerex Fuji Electric Model Manufacturer Infineon Powerex Mitsubishi Vishay Fuji Electric Toshiba Infineon Powerex Mitsubishi Vishay Mitsubishi Pack Size

STUDENT ID: 26561999 COURSEWORK#1: Thyristors Range Vforward-block 600 - 6500 V 250 - 6500 V 250 - 1700 V 600 - 1200 V 600 - 3300 V 300 - 1200 V 1200 - 4400 V 200 - 6500 V 300 - 1600 V 100 - 2600 V 2500 - 6000 V VCES IC Range Ion-state 1 - 3600 A 35 - 2500 A 35 - 2500 A 100 - 600 A 50 - 3600 A 20 - 200 A 61 - 1070 A 100 - 5000 A 10 - 400 A 6.5 - 2310 A 1000 - 6000 A VCE(sat) Eon Eoff ton toff RthJC

Table 1: Device V-A Ranges (adapted from OEM data [8] to [13])

single switch (l x w x h) mm IHV FZ1500R33HL3 190 x 140 x 30 CM1500HG-66R 190 x 140 x 41 1MBI1500UE-330 190 x 140 x N/A Pack Size (l x w x h) or ( x h) mm 104 x 70 x 80 (pack) 52 x 28 (puck) Pack Size ( x h) mm 47 x 27 (puck) VDRM V 3600 3600 VDRM

V I 3300 1500 3300 1500 3300 1500 IAVM A 530 350 ITQRM ITSM A 20000 5060 IT(AV) A 400

V mWs mWs S S K/W 2.4 3200 2950 N/A N/A 0.0085 2.45 2900 2700 0.95 2.8 0.0085 2.46 N/A N/A 3.1 2 N/A (di/dt)CR A/S 80 150 ITSM A 8400 tq i2dt
2

Table 2: IGBT Salient Specifications (adapted from available OEM data [8], [9] and [12] )

Manufacturer Infineon Powerex

Model single switch TZ 530 N36 KOF T8K7 Model single switch FG1000BV-90DA

IGT

IL mA 2500 N/A RthJC K/W 0.03

IH

RthJC

S As mA 400 2000000 N/A 250 100000 200 (di/dt)CR tgq IGT

mA K/W 500 0.045 N/A 0.040

Table 3: SCR Salient Specifications (adapted from available OEM data [8] and [9]), for phase control NOT inverter application

Device Manufacturer GTO Mitsubishi

V A 4500 1000

A/S S mA 1000 20 2500

Table 4: GTO Salient Specifications (adapted from available OEM data [11]), for inverter application

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AUTHOR: Muhammad Ali Qaiser MODULE: Power Electronics ELEC6125

STUDENT ID: 26561999 COURSEWORK#1: Thyristors

DRIVE CIRCUITS, POWER SHARING AND PRACTICAL APPLICATIONS

Power electronic devices have a plethora of practical uses, with a variety of circuit designs to enable their switching function as well as on-state operation. A few demonstrative cases shall be examined here. One important thyristor application is shorted parallel arrangement with current-limited DC source to prevent over-voltage from reaching the load; a fuse in the path prevents damage to thyristor itself (Figure 8) [15]. Often, trigger side of circuit operates at ELV and so has to be isolated from power side (Figure 9) [16].

Figure 9: Crowbar Thyristor Arrangment for OV Protection (adapted from ON Semiconductors [15])

Figure 8: Protective Isolation Circuit (adapted from Power Guru [16])

A drive circuit suitable for industrial and traction use GTO is illustrated in Figure 10, employing capacitors for pulse shaping and transistors13 for pulse relaying. Transistors at T2 provides negative current for switch-off. The RC components (known as snubber arrangement) also serve to limit rise of dV/dt during switching, prevent device destruction as well as spurious turn-on.

For IGBT control (see Figure 11), a similar double-drive circuit is required but that which applies constant voltage signal rather than momentary current pulse [17]. Fast switching of IGBTs can cause additional surge voltage (due to iR effect from gate resistor and Ldi/dt effect from gate driver inductance). This is limited in practice by diode14 shorting as shown (known as voltage clamping). To increase current handling of IGBTs, they are often used in parallel configuration for power sharing, improved thermal efficiency and redundancy.
Figure 10: GTO Drive Circuit with Snubbing Capability Figure 11: IGBT Drive Circuit with Clamping Capability (adapted from ABB [14] (adapted from PCIM [17]) 13 Multiple in parallel according to gating current requirement 14 Zener with normal

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AUTHOR: Muhammad Ali Qaiser MODULE: Power Electronics ELEC6125

STUDENT ID: 26561999 COURSEWORK#1: Thyristors

The use of thyristors to control power output from AC sources makes them indispensable in manipulating motor speeds, light dimming and pressure-valve instrumentation; to allow HVDC transmission, they are often connected in series to increase voltage handling capacity. GTOs on the other hand are used for high power inversion15 and traction16 applications. However, the switch of choice for high frequency applications is IGBT; it is used in circuits for VFD17, hybrid vehicles and harmonic filters. When connecting semiconductors in series or parallel, the transient and steady state voltage and current values respectively should be shared by devices [2]. This can be achieved by matching electrical properties18, or using external circuits to force equalization.

FUTURE PROSPECTS
In assessing the prospective industrial direction, the background quest for improving device requirements remains firm: larger values of forward break-over, current flow, switching frequency, critical rise rates (dV/dt, di/dt) but lower magnitude of losses, turn-off time and gate pulse [18]. Laboratory research on replacement of Si by SiC19, GaN20 and diamond as fabrication material is a recent development; in future it could significantly improve current capacity and blocking voltage of switches due to wider-band electric field gap, while reducing current leakage [19]. Increase in size of fabricated single-crystal silicon is being researched by improvement of fabrication method called float-zone; this employs neutron transmitter doping. Large crystal diameters in future will mean significant increase in current and voltage ratings of thyristors (laboratory values up to 13 kV are being tested) [20]. In addition, a new breed of integrated electronics may emerge with improved wafer bonding and demand for softer switching, by combining thyristors with MOSFET structures [21]. On the other hand, the GTO seems to be losing popularity to IGBT and new generation IGCT devices chiefly due to the latters better dynamic characteristics and lack of snubber requirements. To increase IGBT holes absorption rate during turn-off, previously punch-through21 design was used [22], whereby n-buffer is added after collector-side p-layer; however, this increases turn-off losses. An emerging concept, known as field-stop layering, is being attempted to overcome this problem by decreasing thickness of drift layer as well as reducing doping levels in buffer layer, improving losses and forward-block voltage [23]. It appears that chopper-rectifiers based on IGBT may replace pulse thyristor rectifiers in coming years [24], while LTT22 devices will gain more usage due to being proof against spurious trigger by electrical noise.

CONCLUSION
Semiconductor switching devices have gained maturity in high power applications since their introduction in middle of twentieth century. A review of their performance specifications and practical circuit applications was conducted here. It was seen that while the thyristor still forms the highest power and robust device from the choice range, material fabrication improvements mean that the IGBT is fast growing in popularity. It may even replace the GTO, which was once considered a leap forward in thyristor technology.
15 16

DC to AC Such as rail 17 Variable Frequency Drives for industrial motor applications 18 Blocking voltage, switching delay, on-state voltage drop, normal junction temperature 19 Silicon carbide 20 Gallium nitride 21 PT 22 Light Triggered Thyristor

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AUTHOR: Muhammad Ali Qaiser MODULE: Power Electronics ELEC6125

STUDENT ID: 26561999 COURSEWORK#1: Thyristors

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AUTHOR: Muhammad Ali Qaiser MODULE: Power Electronics ELEC6125

STUDENT ID: 26561999 COURSEWORK#1: Thyristors

APPENDIX I: Elaboration of Device Physics

Building upon operating principles introduced in opening portion of the report, this appendix forms a supplement that explains further details of physics involved at junction level.

Thyristor
As stated earlier, the device is made up of four alternating pn layers, and acts as a bi-stable switch. Forward break-over voltage can reach 8 kV with operational current ratings of over 6 kA at relatively low switching frequencies (around 1 kHz). The central n-type layer is thickest (n1) at around 1000 m along with lower doping levels than other layers [25], in order to allow a high forward-block voltage (VBO)23. The np layers around junction J3 are doped heaviest (with carrier concentrations between 1017 and 1019 cm-3) to allow carrier regeneration during turn-on process. According to Mohan et al. [26], under application of positive voltage VAK, the thyristor is turned on by a gate current pulse because the electrons injected across forward-biased junction J3 are swept via base of npn BJT through J2 into region n1, which is consequently the base of coupled pnp transistor. These extra electrons cause depletion region to grow into n1, thus leading to an increase in base transport coefficient ; in addition minority carriers (holes) of the pnp BJT are attracted by the electrons from junction J1. These holes are swept towards junction J3, further encouraging electron injection from gate. Very simply, the activation of lower BJTs base in Error! Reference source not found. (presented earlier) pulls emitter of upper BJT into operation as well. Positive regeneration process forces the thyristor into a saturated on-state, whereby latching of a large IA occurs without the need for continued IG. Turn-off is achieved by lowering the device current to below hold value (IH) so that the thyristor is pulled out of saturation into carrier recombination and sweep-out mode. Even a negative current pulse on the gate cannot turn off the device; it will rather reverse-bias part of junction J3 nearest the gate, forcing the major current to flow in a constricted remaining channel towards the cathode in order to keep that junction working in forward-bias. Instead either the voltage across it (VAK) has to be removed (or reversed), or the current through it (IA) has to be forced below a holding value (IH), again for a specified minimum duration. Generally, thyristor fabrication is such that nominal forward-block (VBO) and reverse-block (VRWM)24 voltages are similar in range. The thyristor family has expanded to contain specialized devices according to their application [27]. Among the established uses, Convertor Thyristors are used for phase control by natural commutation. In firing these thyristors, the main considerations are power control by trigger angle and input voltage [28]. Faster turn-off time yields Invertor Thyristors that operate with assistance of commutating circuitry; recombination zones are introduced to quicken switch-off time, but this compromises operational VD25 [29]. Addition of n-layer buffer near anode yields Reverse Conducting Thyristors [30] with low reverse-block, thus offering application in feedback rectifier inversion circuits. Light-Triggered Thyristors26 offer protection against spurious gate trigger by electrical noise, as signalling is done by light instead [31].
23 24

Also referred to as Break-Over Voltage Also known as Reverse Stand-Off Voltage 25 Voltage Drop in conduction state 26 LTT

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AUTHOR: Muhammad Ali Qaiser MODULE: Power Electronics ELEC6125

STUDENT ID: 26561999 COURSEWORK#1: Thyristors

GTO
While structurally a GTO has the same 4 layers as a thyristor, a high intermeshing of layers is done as explained earlier, to minimize gate-to-cathode distance; this goal is further achieved by thinning p2 the layer and heavily doping n2. When turn-off gate pulse (negative) is applied, holes from IA migrate towards the gate, while remaining current filaments towards cathode islands until pinched off. Such channels do not exist in a simple thyristor, wherefore current cannot be snuffed out by carrier diffusion. In essence, base current from lower transistor of Error! Reference source not found. (presented earlier) is extracted, which in turn reverse biases its GE27 junction (J3) and stops further carrier injection in upper transistor, pulling the system out of saturation. However, this also limits GTO to low VRWM and high Ig28 values. The ratio between anode and negative gate currents is called turn-off gain; it is typically around 4. The GTO suffers from a compromise limitation between ease of turn-on and turn-off; the focal point of this conflict is carrier lifetime in layer n1. Shorter lifetime quickens turnoff but impacts forward conduction.

27 28

Gate-Emitter Gate trigger current (for switching on)

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AUTHOR: Muhammad Ali Qaiser MODULE: Power Electronics ELEC6125

STUDENT ID: 26561999 COURSEWORK#1: Thyristors

APPENDIX II: Explanation of Datasheet Terminology

This guide serves to explain the meaning of technical parameters presented in Table 2 to Table 4. These have been distilled from OEM technical guides

( [8] to [13]). Reference General Table 2: IGBT Table 2: IGBT Table 2: IGBT Table 2: IGBT Table 2: IGBT Table 2: IGBT Table 2: IGBT Table 3: SCR Table 3: SCR Table 3: SCR Table 3: SCR
Table 3: SCR Table 3: SCR Table 3: SCR Table 3: SCR Table 3: SCR Table 4: GTO Table 4: GTO Table 4: GTO

Parameter
Ti VCES VCE(sat) Eon Eoff ton toff RthJC VDRM IAVM ITSM (di/dt)CR tq i2dt Igt IL IH ITQRM IT(av)

Meaning Junction temperature Collector-emitter voltage Collector-emitter saturation voltage Turn-on energy loss Turn-off energy loss Turn-on time Turn-off time Thermal resistance (junction to case) Repetitive peak forward off-state voltage Average on-state current Surge on-state current Critical rate of current rise Turn-off time Integral of square of surge current Gate trigger current Latching current Holding current Maximum repetitive on-state current Average on-state current Turn-off time

tgq

Explanation Specified for measurement of other parameters Permissible peak voltage specified at Tj = 25oC (similar to thyristor break-over) Voltage drop device consumption during on-state at Tj = 25oC and VGE = 15 V Dissipated energy during device switch-on at Tj = 125oC Dissipated energy during device switch-off at Tj = 125oC Time taken for device switch-on at Tj = 125oC Time taken for device switch-off at Tj = 125oC Represents inverse of thermal conductivity to external heat sink Permissible peak voltage (also known as forward break-over VBO) Measured through anode at Tj = 85oC Maximum current peak permissible for 10 ms at Tj = 25oC Measured at cathode during trigger, defined as straight line through 10% and 50% of rising current with applied voltage as 0.67 VDRM By natural commutation Represents short-circuit protection for fusing within 10 ms Switch-on pulse applied at 12 V, Tj = 25oC Minimum value required for transition to on-state Minimum value required for continued on-state operation Similar to surge parameter of SCR, represents controllable maximum Measured at 70oC Duration of negative gate pulse

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AUTHOR: Muhammad Ali Qaiser MODULE: Power Electronics ELEC6125

STUDENT ID: 26561999 COURSEWORK#1: Thyristors

REFERENCE WORKS
[1] IEEE, "John L. Moll," IEEE Global History Network, [Online]. Available: http://www.ieeeghn.org/wiki/index.php/John_L._Moll. [Accessed 01 Mar 2014]. [2] B. W. Williams, "Electrical Ratings and Characteristics of Power Semiconductor Switching Devices," in Principles and Elements of Power Electronics: Devices, Drivers, Applications and Passive Components, Glasgow, University of Strathclyde, 2006, p. 108. [3] M. H. Rashid, Power Electronics: Circuits, Devices & Applications, Boston: Pearson Education, 2014. [4] Polovodice a.s., "IGCT Thyristors," [Online]. Available: http://xiazai.inktronics.com.cn/Uploadfile/DownFile/10-01-29/100129164835_Gf7a.pdf. [Accessed 10 Mar 2014]. [5] B. J. Baliga, M. S. Adler, P. V. Gray, R. P. Love and N. Zommer, "The insulated gate rectifier (IGR): A new power switching device," Electron Devices Meeting, vol. 28, no. Int'l, pp. 264-267, 1982. [6] Siemens, "IGBT Fundamentals," [Online]. Available: http://www.infineon.com/dgdl/Infineon-Description_IGBT-AN-v1.0en.pdf?folderId=db3a30433a047ba0013a69f8f64c0705&fileId=db3a30433f565836013f5ca72d4e29db. [Accessed 27 Feb 2014]. [7] T. Basler, R. Bhojani, J. Lutz and R. Jakob, "Measurement of a complete HV IGBT I-V-characteristic up to the breakdown point," in Power Electronics and Applications (EPE), 15th European Conference, Lille, 2013. [8] Infineon, "Short Form Catalog," 2013. [Online]. Available: http://www.infineon.com/cms/en/product/igbt/igbtmodule/channel.html?channel=ff80808112ab681d0112ab69e66f0362. [Accessed 27 Feb 2014]. [9] Powerex, "Short Form Catalog," 02 Feb 2014. [Online]. Available: http://www.pwrx.com/AboutPages/LiteratureRequest.aspx. [Accessed 27 Feb 2014]. [10] Vishay, "Semiconductors: Power Modules," Vishay, [Online]. Available: http://www.vishay.com/. [Accessed 26 Feb 2014]. [11] Mitsubishi, "Semiconductors and Devices: Power Modules," Mitsubishi Electric, Feb 2014. [Online]. Available: http://www.mitsubishielectric.com/semiconductors/products/powermod/index.html. [Accessed 01 Mar 2014]. [12] Fuji, "Semiconductors: Online Catalog," Fuji Electric, 2013. [Online]. Available: University of Southampton, ECS, 2014 Page 12 of 14

AUTHOR: Muhammad Ali Qaiser MODULE: Power Electronics ELEC6125

STUDENT ID: 26561999 COURSEWORK#1: Thyristors

http://www.fujielectric.com/products/semiconductor/catalogs/catalog.html. [Accessed 01 Mar 2014]. [13] Toshiba, "Semiconductor and Storage Products," Toshiba, [Online]. Available: http://www.semicon.toshiba.co.jp/eng/product/transistor/index.html. [Accessed 03 Mar 2014]. [14] A. Schweizer and E. Carroll, "ABB Semiconductors AG: Application Aspects," [Online]. Available: http://www05.abb.com/global/scot/scot256.nsf/veritydisplay/d16b3c8c40e7745ac1256b9c0036020c/$file/f_sec5.pdf. [Accessed 03 Mar 2014]. [15] ON Semiconductors, "Overvoltage Crowbar Sensing Circuit," [Online]. Available: http://www.onsemi.com/pub_link/Collateral/MC3423-D.PDF. [Accessed 01 Mar 2014]. [16] Tursky, "Driver Circuits," Power Guru, 11 Dec 2012. [Online]. Available: http://www.powerguru.org/driver-circuits/. [Accessed 27 Feb 2014]. [17] H. Ruedi and P. Kohli, "Driver Voltage for High-Voltage IGBTs," in PCIM Europe, Nuremberg, 1999. [18] E. Carroll and N. Galster, "IGBT or IGCT: Considerations for Very High Power Applications," in Forum Europeen des Semiconducteurs de Puissance, Clamart, 1997. [19] Q. Zhang, A. Agrawal, C. Capell, L. Cheng, M. O'Loughlin, A. Burk, J. Palmour, V. Temple, A. Ogunniyi, H. O'Brien and C. J. Scozzie, "SiC Super GTP Thyristor Technology Development: Present Status and Future Perspective," in IEEE Pulsed Power Conference, Chicago, 2011. [20] V. Benda, "Power Semiconductors - State of the Art and Future Trends," Global Journal of Technology & Optimization, vol. 2, pp. 29-36, 2011. [21] A. Muthuramalingam, S. V. Vedula and P. A. Janakiraman, "Performance evaluation of an FPGA controlled soft switched inverter," IEEE Transactions on Power Electronics, vol. 21, no. 4, pp. 923-932, 2006. [22] E. R. Motto and M. Yamamoto, "New High Power Semiconductors: High Voltage IGBTs and GCTs," [Online]. Available: http://www.pwrx.com/pwrx/app/HighPwr.pdf. [Accessed 10 Mar 2014]. [23] X. Kang, A. Caiafa, E. Santi, J. L. Hudgins and P. R. Palmer, "Characterization and modeling of high-voltage field-stop IGBTs," Industry Applications Conference , vol. 3, no. 37, pp. 2175-2181, 2002. [24] J. R. Rodriguez, J. Pontt, C. Silva, E. P. Wiechmann, P. W. Hammond, F. W. Santucci, R. Alvarez, R. Musalem, S. Kouro and P. Lezana, "Large Current University of Southampton, ECS, 2014 Page 13 of 14

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Rectiers: State of the Art and Future Trends," IEEE Transactions on Industrial Electronics, vol. 52, no. 3, pp. 738-746, 2005. [25] I. Poole, "Thyristor Structure and Fabrication," Radio Electronics, [Online]. Available: http://www.radioelectronics.com/info/data/semicond/thyristor/structure-fabrication.php. [Accessed 02 Mar 2014]. [26] U. N. Mohan, T. M. Robbins and W. P. , Power Electronics - Converters, Applications and Design, http://app.knovel.com/hotlink/toc/id:kpPECADE0Q/power-electronics-converters: John Wiley & Sons, 2003. [27] M. S. Adler, W. K. Owyang, B. J. Baliga and R. A. Kokosa, "Evolution of Power Device Technology," IEEE Transactions on Electron Devices, vol. 31, no. 11, pp. 1570-1591, 1984. [28] C. W. Lander, Power Electronics, Berkshire: McGraw-Hill, 1993. [29] M. Otsuka, "The forward characteristics of thyristors," Proceedings of the IEEE, vol. 55, no. 8, pp. 1400-1408, 1967. [30] R. A. Kokosa and B. R. Tuft, "A high-voltage, high-temperature reverse conducting thyristor," IEEE Transactions on Electron Devices, vol. 17, no. 9, pp. 667-672, 1970. [31] E. K. Chukaluri, D. Silber, U. Kellner-Werdehausen, C. Schneider, F. Niedernostheide and H. Schulze, "Recent Developments of High-Voltage LightTriggered Thyristors," in IEEE 36th Power Electronics Specialists Conference, Recife, 2005.

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