DSI45-12A

Standard Rectifier
Single Diode

VRRM = I FAV = VF =

1200 V 45 A 1.23 V

Part number

DSI45-12A

Backside: cathode

Features / Advantages:
Planar passivated chips Very low leakage current Very low forward voltage drop Improved thermal behaviour

Applications:
Diode for main rectification For single and three phase bridge configurations

Package:
Housing: TO-247

rIndustry standard outline rEpoxy meets UL 94V-0 rRoHS compliant

Ratings Symbol VRRM IR VF Definition

max. repetitive reverse voltage reverse current

Conditions VR = 1200 V VR = 1200 V IF = IF = IF = IF = 45 A 90 A 45 A 90 A d = 0.5 TC = 130C TVJ = 175C TVJ = 150 C TVJ = 25 C TVJ = 25 C TVJ = 150 C TVJ = 25 C

min.

typ.

max. 1200 20 3 1.28 1.37 1.23 1.35 45 0.81 9.1 0.55

Unit V A mA V V V V A V m K/W C W A A A A A2 s A2 s A2 s A2 s pF

forward voltage

IFAV VF0 rF RthJC T VJ Ptot I FSM

average forward current threshold voltage slope resistance

rectangular

for power loss calculation only

thermal resistance junction to case virtual junction temperature total power dissipation max. forward surge current

-40 TC = 25 C t = 10 ms (50 Hz), sine t = 8,3 ms t = 8,3 ms

(60 Hz), sine (60 Hz), sine

175 270 480 518 408 441 1152 1120 832 808 18

TVJ = 45C VR = 0 V TVJ = 150C VR = 0 V TVJ = 45C VR = 0 V TVJ = 150C VR = 0 V TVJ = 25 C

t = 10 ms (50 Hz), sine I 2t

value for fusing

t = 10 ms (50 Hz), sine t = 8,3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8,3 ms (60 Hz), sine

CJ

junction capacitance

VR = 400 V; f = 1 MHz

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per diode unless otherwise specified

20090529a

2009 IXYS all rights reserved

DSI45-12A
Ratings Symbol I RMS R thCH Tstg Weight MD FC
1)

Definition
RMS current thermal resistance case to heatsink storage temperature

Conditions per pin

1)

min.

typ. 0.25

max. 70

Unit A K/W C g Nm N

-55 6 0.8 20

150 1.2 120

mounting torque mounting force with clip

IRMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside.

Product Marking

Logo Marking on product DateCode Assembly Code

abcdef YYWW XXXXXX

Ordering Standard

Part Name DSI45-12A

Marking on Product DSI45-12A

Delivering Mode Tube

Base Qty Code Key 30 471895

Similar Part DSI45-16A DSI45-16AR DSI45-08A

Package TO-247AD (2) ISOPLUS247 (2) TO-247AD (2)

Voltage class 1600 1600 800

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per diode unless otherwise specified

20090529a

2009 IXYS all rights reserved

DSI45-12A
Outlines TO-247

L
Dim. Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102

A B

C D E F

G H J K

G K

M N

L M N

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per diode unless otherwise specified

20090529a

2009 IXYS all rights reserved

DSI45-12A

70 60

500

104

400 50

IFSM [A]

I t [A s]

IF [A]

40 30 20

300
2

103

200

100 10 0 0.0 0 0.001 102 0.01 0.1 1 1 2 3 4 5 6 7 8 910

0.4

0.8

1.2

1.6

VF [V] Fig. 1 Forward current versus voltage drop per diode

100

t [s] Fig. 2 Surge overload current

50

t [ms] 2 Fig. 3 I t versus time per diode

80

40

40

IF(AV)M [A]
0 10 20 30 40 0 20 40 60 80 100 120 140 160

Ptot [W]

60

30

20

20

10

0 0 20 40 60 80 100 120 140 160

IF(AV)M [A]

Tamb [C]

TC [C] Fig. 5 Max. forward current versus case temperature, sine180

Fig. 4 Power dissipation vs. direct output current & ambient temperature, sine 180
0.6

ZthJC [K/W]

0.4

Constants for ZthJC calculation: i Rthi (K/W) ti (s) 0.016 0.118 0.588 2.6

1 0.1633 2 0.2517
0.2

3 0.0933 4 0.04167

0.0 0.001

DSI45

0.01

0.1

10

t [s] Fig. 6 Transient thermal impedance junction to case

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per diode unless otherwise specified

20090529a

2009 IXYS all rights reserved