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by BC546/D

SEMICONDUCTOR TECHNICAL DATA

Amplifier Transistors

BC546, B

NPN Silicon

BC547, A, B, C
BC548, A, B, C
COLLECTOR
1
2
BASE
3
EMITTER
1

MAXIMUM RATINGS

Symbol

BC
546

BC
547

BC
548

Unit

Collector Emitter Voltage

VCEO

65

45

30

Vdc

Collector Base Voltage

VCBO

80

50

30

Vdc

Emitter Base Voltage

VEBO

6.0

Vdc

Collector Current Continuous

IC

100

mAdc

Total Device Dissipation @ TA = 25C

Derate above 25C

PD

625
5.0

mW
mW/C

Total Device Dissipation @ TC = 25C

Derate above 25C

PD

1.5
12

Watt
mW/C

TJ, Tstg

55 to +150

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

200

C/W

Thermal Resistance, Junction to Case

RqJC

83.3

C/W

Rating

Operating and Storage Junction

Temperature Range

CASE 2904, STYLE 17

TO92 (TO226AA)

THERMAL CHARACTERISTICS

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Symbol

Characteristic

Min

Typ

Max

Unit

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 1.0 mA, IB = 0)

BC546
BC547
BC548

V(BR)CEO

65
45
30

Collector Base Breakdown Voltage

(IC = 100 Adc)

BC546
BC547
BC548

V(BR)CBO

80
50
30

Emitter Base Breakdown Voltage

(IE = 10 mA, IC = 0)

BC546
BC547
BC548

V(BR)EBO

6.0
6.0
6.0

Collector Cutoff Current

(VCE = 70 V, VBE = 0)
(VCE = 50 V, VBE = 0)
(VCE = 35 V, VBE = 0)
(VCE = 30 V, TA = 125C)

BC546
BC547
BC548
BC546/547/548

0.2
0.2
0.2

15
15
15
4.0

nA

ICES

REV 1

Motorola SmallSignal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

BC546, B BC547, A, B, C BC548, A, B, C

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)

Symbol

Min

Typ

Max

BC547A/548A
BC546B/547B/548B
BC548C

90
150
270

(IC = 2.0 mA, VCE = 5.0 V)

BC546
BC547
BC548
BC547A/548A
BC546B/547B/548B
BC547C/BC548C

110
110
110
110
200
420

180
290
520

450
800
800
220
450
800

(IC = 100 mA, VCE = 5.0 V)

BC547A/548A
BC546B/547B/548B
BC548C

120
180
300

0.09
0.2
0.3

0.25
0.6
0.6

0.7

0.55

0.7
0.77

150
150
150

300
300
300

Characteristic

Unit

ON CHARACTERISTICS
DC Current Gain
(IC = 10 A, VCE = 5.0 V)

hFE

Collector Emitter Saturation Voltage

(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
(IC = 10 mA, IB = See Note 1)

VCE(sat)

Base Emitter Saturation Voltage

(IC = 10 mA, IB = 0.5 mA)

VBE(sat)

BaseEmitter On Voltage
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 10 mA, VCE = 5.0 V)

VBE(on)

V
V

SMALLSIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)

fT
BC546
BC547
BC548

MHz

Output Capacitance
(VCB = 10 V, IC = 0, f = 1.0 MHz)

Cobo

1.7

4.5

pF

Input Capacitance
(VEB = 0.5 V, IC = 0, f = 1.0 MHz)

Cibo

10

pF

125
125
125
240
450

220
330
600

500
900
260
500
900

2.0
2.0
2.0

10
10
10

SmallSignal Current Gain

(IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz)

Noise Figure
(IC = 0.2 mA, VCE = 5.0 V, RS = 2 kW,
f = 1.0 kHz, f = 200 Hz)

hfe
BC546
BC547/548
BC547A/548A
BC546B/547B/548B
BC547C/548C

NF
BC546
BC547
BC548

dB

Note 1: IB is value for which IC = 11 mA at VCE = 1.0 V.

Motorola SmallSignal Transistors, FETs and Diodes Device Data

BC546, B BC547, A, B, C BC548, A, B, C

1.0
VCE = 10 V
TA = 25C

1.5

0.8

1.0
0.8
0.6
0.4

VBE(sat) @ IC/IB = 10

0.7
VBE(on) @ VCE = 10 V

0.6
0.5
0.4
0.3
0.2

0.3

VCE(sat) @ IC/IB = 10

0.1
0.2

0.2

0.5

50
2.0
5.0 10
1.0
20
IC, COLLECTOR CURRENT (mAdc)

0
0.1

200

100

Figure 1. Normalized DC Current Gain

50 70 100

VB, TEMPERATURE COEFFICIENT (mV/ C)

1.0
TA = 25C

1.6
IC = 200 mA
1.2
IC = IC = IC = 50 mA
10 mA 20 mA

IC = 100 mA

0.8

0.4

0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30

IC, COLLECTOR CURRENT (mAdc)

Figure 2. Saturation and On Voltages

2.0
VCE , COLLECTOREMITTER VOLTAGE (V)

TA = 25C

0.9
V, VOLTAGE (VOLTS)

hFE , NORMALIZED DC CURRENT GAIN

2.0

0.02

10

0.1
1.0
IB, BASE CURRENT (mA)

55C to +125C
1.2
1.6
2.0
2.4
2.8

20

10
1.0
IC, COLLECTOR CURRENT (mA)

0.2

Figure 3. Collector Saturation Region

100

Figure 4. BaseEmitter Temperature Coefficient

10

C, CAPACITANCE (pF)

7.0

TA = 25C

5.0

Cib

3.0
Cob
2.0

1.0

0.4 0.6 0.8 1.0

4.0 6.0 8.0 10

2.0
VR, REVERSE VOLTAGE (VOLTS)

20

40

f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz)

BC547/BC548

Figure 5. Capacitances

Motorola SmallSignal Transistors, FETs and Diodes Device Data

400
300
200

VCE = 10 V
TA = 25C

100
80
60
40
30
20
0.5 0.7

1.0

2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)

30

50

Figure 6. CurrentGain Bandwidth Product

BC546, B BC547, A, B, C BC548, A, B, C

BC547/BC548

TA = 25C

VCE = 5 V
TA = 25C

0.8
V, VOLTAGE (VOLTS)

hFE , DC CURRENT GAIN (NORMALIZED)

1.0

2.0
1.0
0.5

VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 5.0 V
0.4

0.2
0.2
VCE(sat) @ IC/IB = 10
0

10
100
1.0
IC, COLLECTOR CURRENT (mA)

0.1 0.2

0.2

1.0

0.5

2.0

100

200

50

100

200

1.0
TA = 25C

1.6
20 mA

50 mA

100 mA

200 mA

1.2
IC =
10 mA

0.8

0.4

50

Figure 8. On Voltage

VB, TEMPERATURE COEFFICIENT (mV/ C)

VCE , COLLECTOREMITTER VOLTAGE (VOLTS)

Figure 7. DC Current Gain

10 20
2.0
5.0
IC, COLLECTOR CURRENT (mA)

0.02

0.05

0.1

0.2
0.5
1.0 2.0
IB, BASE CURRENT (mA)

5.0

10

1.4

1.8
VB for VBE
55C to 125C

2.2

2.6

3.0

20

0.2

Figure 9. Collector Saturation Region

0.5

10 20
5.0
1.0 2.0
IC, COLLECTOR CURRENT (mA)

Figure 10. BaseEmitter Temperature Coefficient

BC546

f T, CURRENTGAIN BANDWIDTH PRODUCT

40

C, CAPACITANCE (pF)

TA = 25C
20
Cib
10
6.0
Cob

4.0

2.0

0.1

0.2

0.5
5.0
1.0 2.0
10 20
VR, REVERSE VOLTAGE (VOLTS)

Figure 11. Capacitance

50

100

500

VCE = 5 V
TA = 25C

200
100
50

20

1.0
5.0 10
50 100
IC, COLLECTOR CURRENT (mA)

Figure 12. CurrentGain Bandwidth Product

Motorola SmallSignal Transistors, FETs and Diodes Device Data

BC546, B BC547, A, B, C BC548, A, B, C

PACKAGE DIMENSIONS

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.

R
P
L

SEATING
PLANE

K
D
J

X X
G
H
V

SECTION XX

N
N

CASE 02904
(TO226AA)
ISSUE AD

Motorola SmallSignal Transistors, FETs and Diodes Device Data

DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V

INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500

0.250

0.080
0.105

0.100
0.115

0.135

MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70

6.35

2.04
2.66

2.54
2.93

3.43

STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER

BC546, B BC547, A, B, C BC548, A, B, C

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different
applications. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. Motorola does
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against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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Motorola SmallSignal Transistors, FETs and Diodes Device Data

*BC546/D*

BC546/D