1

Power Electronics
Prof. B. G. Fernandes
Department of Electrical Engineering

Indian Institute of Technology, Bombay
Lecture - 4
Hello, in my last class I told you some of the very important applications of power electronics
and some of the significant events in the history of power electronics till 1957, the year in which
silicon controlled rectifier or thyristor was invented. As I go long, of course I will tell you the
other significant events and we started discussing about the power semiconductor devices. I told
you that power semiconductor devices are heart and soul of power electronic equipment. These
are used as switches that means when they are on, we need to operate them in saturation and
when they are off, we need to operate in: sorry, when they are off, they are in cut off region.

There are three types of switches. One is an uncontrolled switch, uncontrolled because whether a
switch is on or off it depends on the circuit operating conditions. Say, diode for example and
there is a semi controlled switch. A silicon controlled rectifier or thyristor is a semi controlled
switch because it can be turned on by supplying some current to the gate or to the control
terminal. But then, having turned on the device, you cannot turn it off using the gate.

Now, the SCR which is conducting, it turns off depending upon the circuit condition. If the
current becomes zero in the circuit, thyristor will turn off and third one is a controlled switch. It
can either turn it on or off using the control terminal. Say bipolar junction transistor, by
supplying a base current, you can turn it on. You make i
b
is equal to zero, base current zero,
transistor turns off. Now we will study the various devices in detail.















2

(Refer Sl


First one
the class
then it is
low powe
as the po
and when
ideal cha
than the
the chara
the curre
mode, V
A

Now as l
break do
applied a
230 volts
should be
is a passi

But then
that is fl
than V
BD
to be des
across th
state loss
magnitud
to mount
signal dio
lide Time: 3
e is diode, a
eleven, ano
s said to be i
er diode, it c
ower rating i
n the diode i
aracteristics a
rated and it
acteristics of
ent that is lim
AK
is negativ
long as the a
own, diode w
across the dio
s, so negativ
e higher than
ive one.
, if the appli
owing, then
D
and you are
structive. It i
he diode. I w
s or the con
de of V
f
and
t the diode o
ode, it would
:47)
two termina
ode and catho
in forward b
could be, V
A
increases. Sa
is on, all of u
are along th
can block a
f a non ideal
mited by the
ve.
applied volta
will block th
ode should b
ve peak is g
n 230 into ro
ied voltage i
n the device
e not able to
is going to b
will call it as
nduction los
d I
a
say, if it
on a heat sink
d not need to
al device. A
ode. So if V
bias mode an
AK
could be o
ay, for a pow
us know tha
e y axis. Th
a negative v
diode. May
e load. This
age is less th
hat voltage.
be less than V
going to be
oot 2, if you
is higher tha
will get da
o control the
be destructiv
V
f
and I
a
is
ss is given
is higher tha
k. Invariabl
o or generall
All of us kno
V
AK,
voltage
nd diode sta
of the order o
wer diode it
at current in
at is, it can c
oltage, it ca
be, a cut in
is forward
han V
BD,
see
In other w
V
BD,
we nee
230 into roo
are using in
an V
BD
and i
amaged. Rem
current that
ve. So, durin
the current
by V
f
into
an a certain
ly power dio
ly is not mou
ow, we have
across the d
arts conducti
of 0.7 volts o
t could be o
the circuit is
carry any cu
annot a block
voltage som
biased and
e V
BD
is this
words, the m
ed to ensure t
ot 2. So, the
n a single pha
if you are n
member, if t
t is flowing t
ng on state,
that is flowi
I
a
that depe
value, you n
odes are mou
unted on a he

been studyi
diode V
AK,
sh
ing. So for a
or so and thi
f the order o
s limited by
urrent assum
k positive vo
mewhere at t
this is durin
s point, brea
maxim revers
that. Say, th
e voltage rat
ase circuit as
not able to co
the applied v
through the
there is a fi
ing through
ending upon
need to go in
unted on a h
eat sink.
ing may be
hould be po
a silicon dio
is value incr
of 1.5 volts
the load. Se
ming which i
oltage. Thes
this point and
ng reverse b
ak down, jun
se voltage th
he input volta
ting of the d
ssuming that
ontrol the cu
voltage is h
diode, it is g
nite voltage
the diode. S
n V
f
and I
a
n for or you
heat sink. A
since
sitive
ode, a
reases
or so
ee the
s less
se are
d this
biased
nction
hat is
age is
diode
t load
urrent
higher
going
drop
So, on
.
The
need
small
3

Now, all
the off st

(Refer Sl

See, whe
dependin
zero but
because t
and to ge
time to re
from this
flowing i

So, trr is
this curre
charge. N
this is a l
charge. T
assuming
recovery

See, even
So if the
role or in
reverse r
anode. S
it may h
of us know
tate, the diod
lide Time: 8
en the curren
ng upon the
the diode c
the minority
et neutralize
ecombine an
s point, the
in the revers
the time fro
ent is the le
Now, what is
linear one. I
The area of
g this to be
charge, they
n the current
circuit in w
n other wor
recovery cur
ee this curre
have to flow
the on state
de, the way i
:25)
nt in the cir
input voltag
continuous t
y carriers the
ed. I will rep
nd that takes
first zero cr
e direction.
om this point
eakage curre
s the reverse
am just dete
f this shaded
a triangle o
y are very im
t has become
which the fre
rds t
rr
will d
rrent, it is fl
ent is flowin
w through ot
e behavior of
t turns off is
rcuit, of cou
ge or so curr
to conduct.
ey require a
peat, the min
s place in the
rossing to sa
So, the maxi
t to say 0.25
nt which is
e recovery ch
ermining the
d part is no
one, area of
mportant, two
e zero it cont
equency of o
determine th
lowing in th
ng from catho
ther switche
f the diode.
s a bit import

urse this is t
rent starts fo
A reverse c
certain time
nority carrie
e time t
rr
. trr
ay 25% of th
imum value
of irr. I am
very small
harge? It is
e area of the
othing but i
rr
the triangle
o important
tinuous to co
operation is
he upper fre
he opposite
ode to anode
es. Those sw
Now, in the
tant. Why so
the current t
ollowing. At
current starts
e to recomb
rs which are
r is the rever
he maximum
of current in
assuming th
and this is
the area of
e triangle to
rr
, is a peak
e. So, revers
parameters.
onduct for o
very high, t
equency of o
direction, it
e so either it
witches have
e power elec
o, I will tell y

that is flowi
t this point,
s flowing ti
bine with the
e there they
rse recovery
m value of th
n the reverse
hat this point
the charge,
this plot. I a
find out the
k into t
rr
div
se recovery
Why are the
r goes to off
this t
rr
will p
operation an
t is flowing
t has to flow
e their own
ctronics circu
you.
ing in the c
current bec
ll, say t
rr
, th
e opposite ch
require a ce
time. It is a
he current th
e direction is
t is 0.25 of r
reverse reco
am assuming
reverse reco
vided by 2.
time and re
ey important
fset only afte
play an impo
nd this q
rr
o
from catho
w to the sour
current car
uit, in
circuit
comes
hat is
harge
ertain
a time
hat is
s i
rr
.
rr and
overy
g that
overy
I am
everse
t?
er t
rr.

ortant
or the
ode to
rce or
rrying
4

capacity.
current.

(Refer Sl

See, yest
of the sw
two diod
1200 vol

The reve
specifica
upon the
Coulomb
of the dio















So, in addi
lide Time: 00
terday I show
witches, I wil
des, this mod
ts.
erse recovery
ations, the da
e junction t
bs. This is al
ode. What ar
tion to the l
0:12:34 min
wed you this
ll tell you so
dule has. The
y time of thi
ata sheet say
temperature,
l given in th
re the other i
oad current,
n)
s power mod
ometime late
e current rati
is diode is o
ys. It could
q
rr
the rev
he data sheet
important sp
that device

dule. I said, t
er and in par
ing of this, e
of the order,
be of the o
verse recove
s. So, what a
pecifications
may have t
there are two
rallel there a
each diode is
, say 0.2 mi
order of 0.2m
ery charge
about the oth
of the diode
to carry this

o control sw
are two diod
s 75 amperes
cro second.
micro secon
is of the o
her ratings?
e?
reverse reco
witches. The n
des. These ar
s and it can b
That is wha
nd and depen
order of 1 m
important ra
overy
name
re the
block
at the
nding
micro
atings
5

(Refer Sl

They are
power ci
current c
cycle. Th
diode sho
determin
fourth on
used in
capability

The fifth
is there is
part I hav
omega t
Capacito
switch? T
output vo
withstand
to the ave

May be s
current a
rating. It
is require
example,
part of th

lide Time: 13
; one is aver
ircuit, so de
can be determ
he second po
ould be less
ne the condu
ne, t
rr
revers
high switch
y.
h one is the s
s an ac sinus
ve not drawn
is equal to p
r voltage is z
There is goi
oltage is zer
d that curren
erage forwar
sometime lat
and surge cu
is an indica
ed to choose
, I have a inp
he circuit and
3:56)
rage forward
epending upo
mined, I am
oint, reverse
than the bre
uction loss a
se recovery
hing applicat
surge curren
soidal source
n. Usually t
pi by 2. At o
zero and it c
ing to be a l
ro and that l
nt and let me
rd current.
ter, I will sh
urrent rating
ation of or it
e a suitable
put AC sourc
d I have a sw
d current, se
on the inpu
saying duty
blocking vo
eak down vo
nd therefore
time of the
tions or it i
nt rating. To
e, diode. I am
that capacito
omega t is e
cannot chang
large inrush
large inrush
e tell you th
how you a da
s are given.
is the short
fuse in the
ce, a diode a
witch here. S

e here, it is r
ut voltage, th
y cycle becau
oltage, the re
oltage. Third
e the heat si
diode is ano
is required
explain this
m connecting
or is comple
equal to pi b
ge instantane
current. Wh
current has
at this surge
ata sheet wh
Next one i
time surge e
diode circu
and a capacit
Something m
required to a
he load and
use diode m
verse voltag
d, on state v
ink size or t
other very i
to assess th
s, consider th
g a switch a
etely dischar
by 2, input v
eously. So w
hy? Input is
to flow thr
e current is m
herein as a av
s I square t
energy that t
uit. When th
tor. Now I h
may be a main

assess the su
d the duty cy
may not cond
ge that is app
voltage drop
the cooling r
important fa
he high freq
his circuit. W
and a capacit
rged and I cl
voltage set t
what happens
at the posit
rough the di
much much
verage forwa
rating, curr
the diode can
his is import
have not draw
n switch or s
uitability wit
ycle. So av
duct for the e
pearing acros
p, it is requir
requirement
actor in the d
quency switc
What I have
tor, the rema
lose the swit
the positive
s when I clos
tive peak an
ode and it h
higher comp
ard current,
rent squared
n withstand.
ant? So take
wn the rema
so.
th the
erage
entire
ss the
red to
. The
diode
ching
done
aining
tch at
peak.
se the
nd the
has to
pared
RMS
d time
. This
e this
aining
6

Assume that I am closing the switch at omega t is equal to pi by 2 or in the positive peak.
Capacitor is totally discharged, in other words there is a short circuit here. Capacitor voltage
cannot change instantaneously. Voltage at this point is instantaneous value is at the peak and we
have closed the switch at that time. What happens? A large surge current will flow because
voltage across the capacitor cannot change instantaneously. It was zero just prior to closing the
switch. This is at the peak, you have closed the switch. A large surge current will flow and diode
should be able to withstand this surge current which is higher than the average current rating. So
that is about the diodes, the so called uncontrolled switch.

Now, what are the various types of diodes? The first one is a rectifier diode or a slow diode.
They are suitable for line frequency application, so you want to rectify the input AC which is 50
hertz. So you can use the conventional slow diodes or rectifier diodes. The reverse recovery time
is generally is not specified, they are basically slow diodes. So, the maximum rating is of order
of 6kv, the diode can block as high as 6kv and current rating is of the order of 4500 amperes are
available. I will repeat, diode which can carry say, 4500 amperes of current and can block 6kv,
they are available. These are conventional rectifier diodes or slow diodes.

There is second type the one known as the fast recovery diodes. Fast recovery diodes, these are
generally used in high frequency application. Sometime later in the course, we will find that fast
recovery diode should be used in the circuit. You cannot use the conventional rectifier diodes.
So, the rating is of the order of say 6kv and current of the order of 1.1 kilo ampere. They are
available in the market, 6kv it can block and current ratings, 1.1 kilo amperes and the reverse
recovery time could be of the order of say, 0.1micro second, could be. I am not saying that 6kv
1.1 kilo diode, has a reverse recovery time of 1.1micro second, no. The reverse recovery time of
a fast recovery diode could be of the order of say, 0.1micro second. J ust now, example which I
showed you is of the order of 0.2micro seconds.

The third one is the short key diodes. What are the features? They have a very low on state
voltage drop basically these are only majority carriers. Current only due to majority carriers but
then the voltage rating is low. Maximum voltage rating is of the order of 100 volts or so and
current is of the order of 300 amperes and the last one, the fourth one is what is known as the
silicon carbide diode.














7

(Refer Sl


They hav
what I to
low pow
influence
carbide d
problem?
diodes. T
summariz

J ust com
controlle
device; a
are conne
signal is














lide Time: 00
ve ultra low p
ld you. Ther
wer loss, ultr
e on the sw
diode. Ultra l
? Why are
The limitati
zes.
ming to the
d rectifier.
anode, catho
ected in serie
applied with
0:22:53 min
power loss.
refore on sta
a fast switch
witching beh
low power l
they not ve
on is they
second type
The momen
de and gate.
es in the pow
h respect to t
n)
See, Schottk
ate power los
hing behavio
havior, looks
oss, ultra fas
ery popular?
are very ex
e of switche
nt I said sem
. Anode and
wer circuit a
the cathode,
ky diode has
ss also is low
or, very fast
s like we ar
st switching
? You find
xpensive. Th
es, semi con
mi controlle
d cathode, th
nd the gate c
say somethi
s a very low
w but silicon
t diodes, hig
re etching a
behavior, h
only silicon
he process i
ntrolled swi
ed device, i
hey form the
current is su
ing like this.

on state volt
n carbide dio
ghly reliable
almost every
highly reliabl
n diodes no
is also very
itch, a thyri
it has to be
e power circu
upplied with
.
tage drop. T
ode, it has an
e, no temper
ything in si
le and what
ot silicon ca
y expensive,
istor or a si
a three ele
uit terminal,
respect to or
hat is
n ultra
rature
ilicon
is the
arbide
, that
ilicon
ement
, they
r gate
8

(Refer Sl


Our sour
thyristor
be turned
cathode.
first P is

(Refer Sl


N
2
or thi
doped. I
doped. N
lide Time: 25
rce, as I have
diode with
d on using
There are 4
anode, N is
lide Time: 26
is layer is v
will call thi
N
1
is the thick
5:09)
e shown you
a small gate
positive ga
layers say, P
cathode and
6:36)
very thin and
is as P
2,
this
kest of all, t
u, a AC sour
e line here, a
ate current I
P N P N and
d the gate is c
d it is highl
layer is thic
this N is a th
rce, a load an
anode, cathod
I
G
or contro
d therefore th
connected to
y doped. Th
cker than th
hickest of all
nd a thyristo
de and gate
ol signal is
here are three
o this P. This
his N layer
his or thicker
l and it is le

or. So, this i
and can be
applied wit
e junctions J
s is the gate.

is very thin
r than N and
ess doped. H
s the symbo
controlled o
th respect to
J
1,
J
2
J
3
. P N

n and it is h
d it is less h
Highly doped
l of a
or can
o the
P N;
highly
highly
d, less
9

highly do
same as t
and a ver
very low
transistor

Base em
voltage in
signal di
block is v
high reve

Now wh
forward
anode to
device sh
current w
what hap

(Refer Sl


I said V
A
battery. N
forward b
junction

Now, wh
V
AK
is ne
biased. S
V
AK
is ne
oped, less d
this P, slight
ry thin layer
w breakdown
r.
mitter junctio
n either dire
ode, you ne
very low, ve
erse voltage,
hat are the v
biased and
cathode is v
hould be fo
will flow thr
ppens in forw
lide Time: 30
AK
is positive
N is negative
biased, J
3
is
J
2
is reverse
hat happens
egative, som
See, when V
egative, J
1
an
doped. Dopin
tly thicker an
r, this P is re
n voltage in
on in a trans
ction, in the
eed to apply
ery small. It
, cannot supp
various chara
the current
very small, t
orward biase
rough the de
ward blockin
0:40)
e, see look h
e, so definite
forward bia
biased. So t
when the de
mething simil
V
AK
is positiv
nd J
3
are rev
ng level is v
nd less highl
elatively hig
either direct
sistor is ligh
sense it can
y a 0.7volts
cannot block
port a very h
acteristics w
is zero, the
the device is
ed, V
AK
is p
evice. So, th
ng mode? Th
here, V
AK
is p
ely J
1
is forw
ased and J
2
i
the entire vo
evices in rev
lar to the dio
ve, J
1
and J
3
erse biased a
very low in
ly doped. So
ghly doped a
tion, someth
htly low, ve
n block a ver
to the base
k a very high
high reverse
when V
AK
is
device curr
s said to be
positive, a v
is mode is k
here are three
positive. So
ward biased a
is reverse bi
ltage appear
verse biased
ode, V
AK
is n
3
are forward
and J
2
is forw
this and a v
o, therefore J
and slightly
hing similar
ery highly d
ry low voltag
to turn it o
h voltage. So
voltage.
positive? In
rent or the
in forward b
very small c
known as fo
e junctions J
P is connect
and J
3
is forw
iased. So, in
rs across J
2.
d mode? Wh
negative, at t
d bias and J
ward biased.
very thick la
J
3
, see N is v
thicker. So,
to base emi
doped. So, i
ge. In the cla
on and rever
o, therefore
n other wor
current that
blocking mo
current equa
orward block
J
1
J
2
J
3.


ted to, as sai
ward biased.
n the forward
hen the junc
that time J
1
a
J
2
is reverse
.
ayer and this
very highly d
junction J
3
itter junction
it cannot blo
ass, may be
rse voltage i
J
3
cannot su
rds, the devi
t is flowing
ode. I will re
al to the lea
king mode. N
id, positive o
J unction J m
d blocking m
tion is, whe
and J
3
are re
biased and w
s P is
doped
has a
n in a
ock a
small
it can
upport
ice is
from
epeat,
akage
Now,
of the
minus
mode,
en the
everse
when
10

In the fo
across J
2
Now, wh
cannot su
when it i

(Refer S


Now I w
transistor
this and t
transistor
forms a N

Now how
collector
of T
2
an
transistor
same as
character
similar to
that appl
as V
BR
.

In the fo
you the d
Q
1
or P to
the devic
J unction
orward block
or J
2
should
hen at the dev
upport a high
s reverse bia
Slide Time: 3
will show yo
r analogy. Se
this. Say, N
1
r. See here, P
NPN transist
w do I inte
of T
2,
NPN.
d this is the
r inter conne
base of NP
ristics, I wil
o that of a d
ied voltage i
rward bias m
device is in
o Q
2.
Assum
ce is forward
J
1
and J
3
ar
king mode,
block the vo
vice in rever
h reverse vo
ased, entire v
33:10)
ou the chara
ee, I told you
1,
N
1,
P
2,
P
2.
N
P
1,
N
1
and P
tor. See here
rconnect T
1
. Base of T
1
e gate termi
ect them. Ba
PN. So, this
ll explain to
diode, almost
is less than V
mode, if the
forward bloc
e that you ar
d biased. Wh
e forward b
since J
1
and
oltage in the
rse bias mod
ltage becaus
voltage shou
acteristics. B
u there are 4
Now, what is
P
2.
This is P
2
e, NPN trans
and T
2
? B
is same as c
inal. So, the
ase of PNP i
s is anode, t
you now. I
t similar. V
B
V
BR.
Same th
current is v
cking mode,
re not supply
hen the devic
iased and J
2
d J
3
are forw
e forward blo
de, J
1
and J
3
a
se N
2
is very
uld be blocke
Before that
4 layers, P
1
N
s this? Say, h
,
a PNP tran
istor.
Base of PNP
collector of T
ere is a PNP
is same as th
this is catho
In the rever
BR,
reverse b
hing, for dio
very small th
, again it is
ying any gat
ce is forward
2
is reverse b
rward biased
ocking mode
are reversed
y thin and it i
ed by J
1.
maybe, I w
N
1
P
2
N
2.
Now
here P
1,
N
1
a
nsistor and ag
P transistor,
T
2
and collec
P transistor,
he collector
ode, this is
rse bias mod
break over v
ode I called
hat is equal
stable that c
te current, as
d biased J
1
an
biased. So,
d, the entire
e, remember
d biased. But
is highly dop

will try to sh
w, what I wi
and P
2.
Now
gain here I h
say, base o
ctor of T
1
is
PNP, NPN
of NPN, co
gate and h
de, character
voltage, so y
as V
BD
and
to the leaka
corresponds
s of now the
nd J
3
are also
when it is i
e voltage ap
r.
t I told you th
ped. So, ther
how you the
ill do is, I wi
this forms a
have N
1,
P
2,
N
of T
1
is sam
same as the
N transistor,
ollector of PN
here are the
ristics are al
you should en
here I am ca
age current, I
to P to Q or
e gate is open
o forward bi
n forward b
ppears
hat J
3
refore
e two
ill cut
a PNP
N
2
. It
me as
e base
NPN
NP is
SCR
lmost
nsure
alling
I told
r P to
n and
iased.
biased
11

mode the entire voltage J

2
blocks and in case the applied voltage is higher than the break down
voltage of the junction J
2,
device goes into conduction mode.

I will repeat, I assume that gate current is 0 and if the applied voltage is higher than V
BO,
see here
V
BO
with I
G
is equal to 0. V
BO
that is break over, forward break over, what happens? Device goes
into conduction mode. But then how does it go? In what is the path that does it takes? I told you
that just prior to device goes into conduction mode, the voltage is may be, approximately equal
to V
BO.
It is high the moment the device goes into conduction mode. The voltage will drop to a
very low value. It could be of the order of say 1.5 volts or so 1.5 to 1, 2 volts. Till 0 to V
BO,

current that is flowing is very small. It is equal to the forward leakage current.

Once the device is in conduction mode, current is limited by the load. Now, what path does it
takes? It was blocking a relatively higher voltage, the moment it goes to conduction mode
voltage drops to a very low value, the paths taken by this is this. I have shown this is to be dotted
one. Why did I show this to be a dotted? Why it is not firm like P to Q? Why it is not firm? This
is because this region is an unstable region. Why it is unstable? because it is a negative resistance
region.

See, voltage is falling, current is increasing, the slope of this line is negative resistance region.
So, it is unstable and it goes to, see, RS is the forward conduction mode, current, the operating
point here depends only on the load and now see, there is a third element what is known as a gate
and therefore by supplying the gate current it should be able to trigger the device. So, definitely
with the finite gate current, the voltage at which it goes to conduction mode should reduce. So
see, as the gate current increases, the voltage at which device goes into conduction mode also
drops.

I
G0,
so voltage applied should be higher than V
BO
forward break over, V
BO
is forward break over.
So, with the finite I
G1,
device goes into conduction mode at a relatively lower voltage and if I
increase I
G
further, it goes to conduction mode somewhere at this point, say PQ for 0 I
G,
P
1
Q
1
for
some I
G1
which is less than I
G2
and for that the path is PQ
2
and once the device current is higher
than the latching current, gate has no control. So I will repeat, by supplying a positive gate
current, device goes into a conduction mode and by supplying a gate current the voltage at which
device goes into conduction mode also reduces.

But then, the gate signal should be present till the current through the device is higher than the
latching current. The device should be able to latch, till then gate signal should be present and
having gone into conduction mode, the gate has no control. You can withdraw or you can make
I
G
is equal to 0. In fact, it is advantageous to make I
G
is equal to 0. Why? Gate has no control, if
there is a constant I
G
flowing, definitely there is going to be a dissipation in that junction. So, in a
way, it is an advantageous to make I
G
is equal to 0. Once the current through the device is higher
than the latching, because having gone into conduction mode if the current is higher than the
latching, gate has no control and you can withdraw the gate signal.

But then to turn the device off, current through the device should fall to a value which is less
than the holding current. Somewhere here, see here, I
H
is the holding current. So, to turn off the
device, I will repeat, the current that is flowing through the device should fall to a value which is
12

less than
do we ne
time. So,

(Refer Sl


See, V
BO
by J
2
bec
by J
2.

(Refer S


the holding
eed to do so
that is abou
lide Time: 45
O
is the forw
cause J
1
and
Slide Time: 4
g current. Ho
omething dif
ut the SCR ch
5:36)
ard break ov
J
2
are J
1
and
46:17)
ow does it h
fferent to re
haracteristic
ver voltage a
d J
3
are, they
appen? We
duce this cu
cs. This is all
and this volt
y are forwar
will see, wh
urrent. We w
l the explana
tage is determ
rd biased. So
hether it hap
will study du
ation that I h

mined by, V
o, V
BO
is com

ppens natural
uring approp
have given.
V
BO
is determ
mpletely blo
lly or
priate
mined
ocked
13

Now her
circuit, I
through t
varying i

So, as I
G
voltage,
voltage a
because I
reduces t

Now how
transistor
transistor
analogy,
thyristor?

(Refer Sl


See, for a
I
E
is the
divided b
is a comm

Now, for
anode cu
am callin
about for
I
K,
the c
current, g
re, I have ju
am just clo
the device, th
in this resisto
G
increases, t
this voltage
at which dev
I
G,
the gate c
the depletion
w do we ana
r analogy?
r and there i
can we find
? Answer is
lide Time: 00
any transisto
emitter curr
by I
E
and wh
mon equatio
r this transist
urrent I
A.
So,
ng I
CBO1
is t
r T
2
? Now, f
athode curre
gain of T
2
int
st shown yo
sing the swi
his load curr
or to vary th
the voltage a
e is determin
vice goes int
current reduc
n layer aroun
alyze the pr
I just show
is an NPN tr
d out or can
yes, I will ex
0:48:38 min
or collector c
rent, alpha is
hat is ICBO?
n I
C
is equal
tor T
1
transis
, therefore I
C
he leakage c
for T
2,
I
E,
T
2
ent I
K.
So, t
to I
K
plus I
C
ou the plot o
itch till the d
rent higher th
e current tha
at V
BO
with
ned by junc
to conductio
ces the deple
nd the junctio
rocess by wh
wed you PN
ransistor and
n we or is i
xplain to you
n)
current I
C
is
s the commo
? It is the le
l to alpha int
stor, what is
C1
is equal to
current of co
is a NPN tra
therefore I
C2
BO2.
of the variat
device goes
han the latch
at is flowing
very low va
ction J
2
itsel
on mode redu
etion layer a
on J
2.
hich the dev
NPN is equiv
d they are in
it possible to
u now.
given by alp
on base curr
akage curren
to I
E
plus I
CB
I
E
emitter cu
o alpha into
ollector to b
ansistor whe
2
is equal to
tion of V
BO
into conduc
hing, then I c
g through the
alue of I
G
is
lf. Above a
uces. So, it
around J
2.
I w
vice goes in
valent to 2
nterconnecte
o understand
pha into I
E
p
rent gain, it
nt of the col
BO.

urrent? Emit
I
A
because
base junction
ereas T
1
is a
o alpha two
with I
G.
So,
ction motor
can open the
e gate circuit
almost the
a certain val
goes on red
will repeat, t
nto conductio
transistors,
ed. Now, usi
d the turn o

plus I
CBO.
Co
is approxim
llector base j
tter current i
I
E
is equal t
n of transist
PNP transis
o, the gain o
here is a si
or till the cu
e switch and
t.
same. This i
lue, this V
B
ducing, why?
the gate curr
on mode us
there is a
ing this tran
on process o
ollector curre
mately equal
junction. So
is nothing bu
to I
A
, plus I
C
tor T
1.
Now,
stor. I
E
is equ
of common
imple
urrent
d I am
is the
O
the
? It is
rent it
ing 2
PNP
sistor
of the
ent I
C,

to I
C

o, this
ut the
CBO1.
I
, how
ual to
base
14

(Refer Sl


Now, we
I
E1
? I
E1
is
base curr
showed y
So, I wil
will add
plus I
CBO

(Refer Sl

lide Time: 5
e all know th
s equal to I
A
rent of transi
you in the be
ll add up tho
them up. W
O1
plus I
CBO2.
lide Time: 52
1:06)
hat I
E,
emitte
A
itself, anod
istor T
1
? Ba
eginning, ba
ose 2 equati
What do I get?

2:34)
er current is
de current. E
se current of
se of T
1
and
ons. Which
? I
C1
plus I
C
collector cu
Emitter curre
f transistor T
collector of
are the 2 eq
C2
is equal to

urrent plus I
B
ent of T
1
is a
T
1
is same as
f T
2,
they are
quations? Th
o alpha one i

B,
base curre
anode curren
s collector cu
e same, they
hese are the
into I
A
plus

ent. Now, wh
nt and what i
urrent of T
2,
are tied toge
two equatio
alpha two in
hat is
is I
B1,

,
I
C2.
I
ether.
ons, I
nto I
K

15

So, here is the equation I have written, as simple as I
C2.
Now, substitute here, I
C
here is I
C1
itself
for transistor T
1,
I
B
is I
B
for T
1
is I
C2.
So, I
C1
plus I
C2
is equal to I
A.
So, these are the 2 current I
C1

plus I
C2
should be equal to I
A,
a PNP transistor that is equal to alpha one into I
A
plus whatever
that equation we are adding to.

What about for transistor T
2
? Listen to me carefully, here what is I
E
? That is I
K
itself. It is I
B2,

base current plus I
C2.
This current, I
B2
plus I
C2.
Now, if there is finite I
G,
what is base current?
Base current is I
G
plus I
C1
plus I
C2
is equal to I emitter, I
E2
that is equal to I
K.
See, I will repeat,
emitter current of T
2
is this current, base current plus collector current. Now what is base
current? You apply KCL at this point for finite I
G,
I
B2
is equal to I
C1
plus I
G.
So, therefore cathode
current is I
C1
plus I
G
plus I
C2.


Now we all ready found that I
C1
plus I
C2
is equal to I
A
for this transistor. I
C1
plus I
C2
is equal to
I
A.
So, therefore I
K
is equal to I
A
plus I
G.
Now, you substitute this value in this equation, I
A
is
equal to alpha one into I
A1
plus C
BO1
plus this equation and what do I get? I get this equation, I
A

is equal to alpha two into I
G
plus I
CBO1
plus I
CBO2
divided by 1 minus alpha one plus alpha two.
So, I have an expression here for anode current in terms of gate current, the leakage current of
collector to base junction and common base current. Now using this expression, how to
understand the turn on process of the thyristor? We will do it in our next class.

Thank you.