302 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 59, NO.

2, FEBRUARY 2012
A New Approach to Implementing High-Frequency
Correlated Noise for Bipolar Transistor
Compact Modeling
Kejun Xia, Guofu Niu, and Ziyan Xu
AbstractA new approach to implementing correlated high-
frequency noise in bipolar junction transistor (BJT) large-signal
compact models is developed by placing an RC-delayed noise
current between the base and collector nodes. The approach
reproduces the two stages of noise transport in a BJT, i.e., noise
generation in the base and emitter and transportation through
the collectorbase junction space-charge region (CB SCR). The
frequency dependence of the intrinsic noise sources due to the CB
SCR is fully described with an accuracy value up to the second or-
der of . As an example, the negative frequency dependence of S
ic
is correctly described for the rst time. The approach is applicable
to any large-signal compact model, and it is demonstrated using
measurement data in both InGaP/GaAs heterojunction bipolar
transistors (HBTs) and SiGe HBTs.
Index TermsBipolar transistor, device modeling, high-fre-
quency noise.
I. INTRODUCTION
I
N BIPOLAR transistors, the base and collector current
noises are naturally correlated due to the transport of minor-
ity carrier velocity uctuation toward transistor terminals [1].
We can separate the overall noise transport into two stages, i.e.,
noise generation and propagation inside the neutral emitter and
base, and the transport of minority carrier current noise at the
end of the neutral base through the collectorbase space-charge
region (CBSCR), as depicted in Fig. 1, for an ideal 1-Dintrinsic
transistor.
Here, i
B
b
represents the hole noise current induced by mi-
nority electron velocity uctuation in the base. Generation
recombination noise is negligible in modern transistors. i
B
b
is
equal to the difference in electron noise currents between the
start and end of the neutral base induced by base electron
velocity uctuation. i
E
b
is the noise induced by minority hole
velocity uctuation in the emitter. i
EB
b
is the total of i
E
b
and i
B
b
.
Manuscript received August 10, 2011; revised October 14, 2011 and
October 29, 2011; accepted October 31, 2011. Date of publication
November 21, 2011; date of current version January 25, 2012. The review of
this paper was arranged by Editor J. D. Cressler.
K. Xia was with the Alabama Microelectronics Science and Technology
Center, Department of Electrical and Computer Engineering, Auburn Univer-
sity, Auburn, AL 36849 USA. He is now with Maxim Integrated Products,
Beaverton, OR 97005 USA (e-mail: kejun.xia@gmail.com).
G. Niu and Z. Xu are with the Alabama Microelectronics Science and Tech-
nology Center, Department of Electrical and Computer Engineering, Auburn
University, Auburn, AL 36849 USA.
Color versions of one or more of the gures in this paper are available online
at http://ieeexplore.ieee.org.
Digital Object Identier 10.1109/TED.2011.2174795
Fig. 1. Noise current ows in an ideal 1-D intrinsic BJT.
i
EB
c
is the electron noise current at the end of the neutral base
induced by base electron velocity uctuation. The transport
of i
EB
c
across the CB SCR induces an additional base noise
current i
C
b
[2]. i
EB
b
and i
EB
c
are correlated, and their noise power
spectrum density (PSD) matrix S
EB
can be described by the
van Vliet model at low injection levels [3], [4]. i
b
and i
c
are the
nal base and collector terminal noise currents, including the
CB SCR transport effect.
The CB SCR transport becomes signicant in modern high-
speed transistors, and it has two consequences. First, nal
collector noise current i
c
is a modulated version of i
EB
c
through
a factor given by Early assuming constant velocity through
the CB SCR [5]
=
1 e
2j
c
2j
c
(1)
where
c
is the CB SCR delay time. Second, an extra noise
current i
C
b
, equal to (1 )i
EB
c
, is added to nal base noise
current i
b
, which signicantly increases the correlation between
the base and collector noise currents. We have derived the PSDs
of i
b
and i
c
as [2], [4]
S
ib
=S
EB
ib
+ 2

(1 )S
EB
icib

+ |1 |
2
S
EB
ic
S
ic
=||
2
S
EB
ic
S
icib
=S
EB
icib
+(1

)S
EB
ic
. (2)
Including correlation has been already shown to be important
[6][9]. In this paper, we develop an approach to implementing
the above noise model in present circuit simulators by explicitly
modeling the CB SCR effect, which is not available yet. A
simplied implementation of (2) was investigated in [10] by
0018-9383/$26.00 2011 IEEE
XIA et al.: NEW APPROACH TO IMPLEMENTING NOISE FOR BIPOLAR TRANSISTOR MODELING 303
reducing S
EB
to uncorrelated 2qI
b
and 2qI
c
shot noises and by
further truncating the expressions up to the second order of .
The nal simplied noise PSDs implemented in [10] are
S
appr
ib
=2qI
b
+ 2qI
c

2
c
S
appr
ic
=2qI
c
S
appr
icib
= j2qI
c

c
. (3)
In a large-signal compact model, this noise model can be
implemented through controlled current sources [10]. Equation
(3) has essentially the same form of the noise model of [11] but
totally different essence as [11] was based on totally different
physical reasoning and used mathematical reconditioning [12].
The simplied model given by (3), however, has a couple of
drawbacks.
S
ic
is frequency independent. From (2), actual S
ic
=
||
2
2qI
c
and, thus, decreases with increasing frequency
because || decreases with frequency according to (1).
S
icib
is purely imaginary. Whereas from (2), it has a
frequency-dependent real part.
The frequency dependence of correlated transistor terminal
noise comes from two parts. The minority carrier velocity uc-
tuation inside the neutral base and emitter propagates toward
the neutral base and emitter boundaries, producing frequency-
dependent correlated noises at the intrinsic transistor terminals.
Transport of minority carrier noise current through the CB SCR
introduces additional terminal noise currents and additional
frequency dependence. The so-called transport noise model
[6], [7] tries to describe the total noise through a single noise
transport delay time
n
, whose noise PSDs are given by
S
tran
ib
=2qI
b
+ 4qI
c

1 (e
j
n
)

S
tran
ic
=2qI
c
S
tran
icib
=2qI
c
(e
j
n
1). (4)
Clearly,
n
lumps frequency dependence from both the neu-
tral region transport and the CB SCR transport. The physical
meaning of
n
is clear only when the CB SCR delay time
dominates the transport, where
n
=
c
. Note that (4) can be
further improved by introducing separate
n
for S
ib
and S
icib

[13].
By truncating (4) to the second order of , (4) can be
approximated by
S
tran,appr
ib
=2qI
b
+ 2qI
c

2
n
S
tran,appr
ic
=2qI
c
S
tran,appr
icib
= j2qI
c

n
. (5)
Equation (5) can be then exactly implemented in large-signal
compact models using either the method in [10] or the method
in [9]. In either case, the problems again are the use of white
S
ic
and purely imaginary S
icib
.
Rudolph et al. have tried to approximately implement (4) in
large-signal compact models using a noise voltage source put
in the base, together with a white 2qI
c
noise current placed
between the base and the collector [14]. This method correctly
models the frequency dependence of S
ib
and the imaginary part
of S
icib
up to the second order of when forward current gain

f
1. Furthermore, the model includes the real part of S
icib
.
This implementation, however, has some clear drawbacks.
Approximated S
ic
increases with frequency, which is un-
necessarily unphysical, and will overestimate noise, as we
will show below.
The real part of S
icib
is ve times overestimated.
Noise correlation is achieved through charge partition of
Q
c
between the base and the collector, which also af-
fects small-signal parameters. Noise modeling and small-
signal parameter modeling are thus coupled, although [14]
showed that Q
c
has a minor effect on small-signal para-
meters of the device investigated therein. An independent
parameter for noise modeling is desirable. In addition,
the method is only applicable in charge-partition-based
compact models.
The requirement of
f
1 limits the usage of the method.
In this paper, we develop an approach to implementing the
full correlated noise model given by (2) in compact models by
reproducing the two stages of noise transport, based on our re-
cent equivalent circuit technique of modeling small-signal input
nonquasi-static effect [13]. A key feature is the use of an RC-
delayed noise current placed between the internal base and col-
lector nodes. We also develop an approximated implementation
for modern transistors as an accuracycomplexity tradeoff in
compact modeling. Using the proposed implementations, both
the real part of S
icib
and the negative frequency dependence of
S
ic
can be faithfully modeled. Meanwhile, the implementations
are applicable to all types of large-signal compact models.
In Section II, we describe the generic implementation of
the correlated noise model for large-signal compact models.
In Section III, we show the approximated implementation.
We compare our method to other existing methods using the
published noise data in an InGaP/GaAs heterojunction bipolar
transistor (HBT) [16]. We then show the modeling results in a
large-signal compact model, i.e., HICUM, using the published
data in a SiGe HBT [10]. In Section IV, we discuss the limit
of the simplied method and the effect of nonconstant velocity
distribution in the CB SCR. Finally, conclusions are drawn in
Section V.
II. GENERIC IMPLEMENTATION THROUGH TWO-STAGE
NOISE TRANSPORT
Fig. 2 shows the proposed large-signal equivalent circuit
that implements the correlated noise model of (2) in large-
signal bipolar junction transistor (BJT) compact models. The
elements inside the dashed box represent the noiseless ideal
intrinsic transistor. D
BE
and D
BC
represent the dc currents of
the intrinsic baseemitter (BE) and basecollector (BC) junc-
tions, respectively. Q
BE
and Q
BC
represent the corresponding
junction charges. I
T
is the transport current. The extrinsic part
of the transistor is not shown.
The circuit elements, namely, i
n
, i
EB
b
, and i
EB
c
, placed out-
side the noiseless intrinsic transistor, are used to produce the
correlated noise due to the CB SCR noise transport. To model
304 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 59, NO. 2, FEBRUARY 2012
Fig. 2. Large-signal equivalent circuit for the intrinsic transistor with pro-
posed noise modeling method. Set
x
=
c
, C
c
d
=
c
, and R
c
d
= 2/3 to realize
the generic two-stage noise modeling in Section II. Set
x
=
n
, C
c
d
=
n
, and
R
c
d
= 2/3 for the simplied implementation in Section III. b_nic, b_nicddt,
b_cdc, and b_rdc are branch names, which are used in the Verilog-A code in
Section III.
the two-stage noise transport and reproduce the PSDs in (2), we
set
x
=
c
, C
c
d
=
c
, and R
c
d
= 2/3 in Fig. 2.
i
EB
b
and i
EB
c
represent the intrinsic transistor base and col-
lector noise currents due to the neutral region minority carrier
velocity uctuation and propagation, and they are attached to
the internal base and collector nodes, respectively. In their
simplest form, the PSDs of i
EB
b
and i
EB
c
are uncorrelated 2qI
b
and 2qI
c
shot noises, and hence, no extra circuit is needed. In
general, however, they are not white, and they are correlated.
Their realization in a large-signal model is discussed below in
detail in Section II-B.
A unique feature of this implementation is the RC-delayed
noise current, i.e., i
n
, placed between the intrinsic base and
collector nodes. Observe that the i
EB
c
in the RC network is
exactly the same i
EB
c
attached to the collector node. Therefore,
i
n
and i
EB
c
are correlated. The principle of such implementation
will become clear next when a small-signal analysis is made.
Another feature is that both and T types of circuit topologies
can be used, i.e., an advantage over [14].
A. Small-Signal Analysis
In the frequency domain, the time-derivative term in the RC
network in Fig. 2 becomes j
c
i
EB
c
with
x
=
c
. i
n
can be
then solved as a function of i
EB
c
as
i
n
=
j
c
1 +j
2
3

c
i
EB
c
= (1

)i
EB
c
(6)

=
1 j
1
3

c
1 +j
2
3

c
. (7)
Fig. 3. Comparisons of versus
c
among the exact expression, the
polynomial approximation, and the approximation in this paper.
A second-order expansion of both

in (7) and in (1) shows

that

1 j
c
2/3
2

2
c
. (8)
Similarly, the negative frequency dependence of || is also
captured with an accuracy value up to the second order of ,
i.e.,
|

|
2
||
2
1 1/3
2

2
c
. (9)
This is particularly important in order to produce negative
frequency dependence in S
ic
. Fig. 3 compares the exact , poly-
nomial approximation, and this method as a function of
c
.
The frequency-dependent rolloff of || and Real() are well
modeled for
c
up to one. Notably, the fractional format of

is capable of modeling the third-order frequency dependence of

Imag().
The equivalent base and collector noise currents, including
the CB SCR transport, i.e., i
b
and i
c
, respectively, are given by
i
b
=i
EB
b
i
n
= i
EB
b
+ (1

)i
EB
c
(10)
i
c
=i
EB
c
+i
n
=

i
EB
c
. (11)
The PSDs of i
b
and i
c
are
S
ib

i
b
i

f
= S
EB
ib
+ 2

(1

)S
EB
icib

+ |1

|
2
S
EB
ic
S
ic

i
c
i

f
= |

|
2
S
EB
ic
S
icib

i
c
i

f
=

S
EB
icib
+

(1

)S
EB
ic
. (12)
Equation (12) exactly follows (2) except that is replaced by
its approximation

. It can be further proved that the frequency

dependence of all the four terms of the noise sources given by
(2), including S
ic
and the real part of S
icib
, have been correctly
modeled with an accuracy value up to the second order of .
XIA et al.: NEW APPROACH TO IMPLEMENTING NOISE FOR BIPOLAR TRANSISTOR MODELING 305
B. Modeling i
EB
b
and i
EB
c
In general, i
EB
b
and i
EB
c
are correlated and their noise PSD
can be described by the van Vliet model at low injection levels
as [3], [4]
S
EB
ib
=4kT

Y
EB
11

2qI
b
S
EB
ic
=2qI
c
S
EB
icib
=2kT

Y
EB
21
+Y
EB
12
g
m

(13)
where Y
EB
are the Y-parameters for the intrinsic emitter and
base region, and g
m
is the transconductance. The combination
of (13) and Fig. 2 gives a generic implementation of correlated
noise for BJTs by explicitly describing the two stages of noise
transport.
However, large-signal circuit simulators do not support cor-
related noise sources. At present, Verilog-A does not support
reference to Y-parameters inside the model either. Equation
(13) has to be simplied to be implementable in the Verilog-
A code. One approximation based on [10] is
S
EB
ib
2qI
b
+ 4qI
c

b
S
EB
ic
=2qI
c
S
EB
icib
j2qI
c

d
(14)
where
b
is the base transit time,
2
is the input nonquasi-
static delay time, and
d
is the output nonquasi-static delay time
[13].
2
,
d
<
b
. Now, the correlated noise (14), similar to (3)
in form, can be faithfully realized through controlled current
sources from uncorrelated noise sources, as shown in [9] and
[10]. By implementing (14) inside the equivalent circuit in
Fig. 2, the extended transport noise model [13], a small-signal
model, is now implemented in large-signal compact models,
which is valid for any combination of
b
and
c
.
III. SIMPLIFIED IMPLEMENTATION FOR
MODERN TRANSISTORS
In modern transistors,
b

c
due to the reduced base width
and the base built-in electrical eld [15]. As a result, uncor-
related i
EB
b
and i
EB
c
with proper parameter setting for Fig. 2
sufces, as shown below. This not only reduces the number of
circuit nodes dedicated for noise modeling but also eliminates
the complexity of extracting parameters
2
,
d
, and
b
.
A. Approximation
First, we approximate S
EB
with uncorrelated 2qI noises, i.e.,
S
EB
ib
2qI
b
S
EB
ic
2qI
c
S
EB
icib
= 0. (15)
Then, we set
x
=
n
, C
c
d
=
n
, and R
c
d
= 2/3 in Fig. 2.
n
is an effective noise delay time that lumps both the neutral
region and CB SCR noise transport effects.
n
is set to excess
output delay time
ex
, which is
d
+
c
theoretically, so that
the imaginary part of S
icib
of the simplied implementation is
the same as that for the exact implementation. Since i
EB
b
and
i
EB
c
are simplied with uncorrelated 2qI white noises, Fig. 2
Fig. 4. Comparison of the intrinsic noise PSDs between the exact results and
the approximation method for an ideal 1-D SiGe HBT at two
c
levels, i.e.,

c
= 4
b
, and
c
=
b
. Noise PSDs normalized by 2qI
c
.
only needs one extra node (na) and one physically meaningful
parameter
n
for noise modeling. The noise PSDs modeled by
this simplied implementation are
S
simp,appr
ib
2qI
b
+ 2qI
c

2
n
S
simp,appr
ic
2qI
c

1 1/3
2

2
n

S
simp,appr
icib
j2qI
c

n
2/3qI
c

2
n
(16)
after Taylor expansions up to the second order of are made.
Equation (16) is obtained from (7), (12), and (15) with
c
re-
placed by
n
. Compared with (5), (16) has nonzero Real(S
icib
)
and negative frequency dependence of S
ic
. Equation (16) is not
implementable in compact models by existing methods, such as
[9], [10], and [14].
Fig. 4 compares the PSDs of the terminal noise currents in
an ideal 1-D SiGe HBT obtained for the simplied implemen-
tation, as shown in solid lines, with the exact results, as shown
in symbols, at two
c
levels, i.e.,
c
= 4
b
, and
c
=
b
. Base
width d
B
= 50 10
7
cm, Ge gradient = E
g
/kT = 4,

n
= 121 cm
2
/V s, and v
sat
= 1.07 10
7
cm/s. = 100.
The noise PSDs are normalized by 2qI
c
. At each
c
level,
the noise PSDs are calculated for frequencies up to 1/2(
c
+

b
), i.e., the cutoff frequency of the intrinsic transistor. The
frequency dependence of all the PSDs is correctly modeled.
The accuracy is, in general, higher at larger
c
, as expected.
The frequency-dependent rolloff of S
ic
is overestimated when

c
=
b
. To achieve correct S
ic
rolloff, analysis shows that R
c
d
should be set to
R
c
d
=
1
2
+
1
6

2
. (17)
However, this requires an extra parameter
c
. Note that
c
is
typically not an independent model parameter but lumped into
the transit time parameter in compact models. Therefore, the
R
c
d
in (17) is not adopted in this paper.
306 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 59, NO. 2, FEBRUARY 2012
Fig. 5. Noise PSDs of the intrinsic transistor in the 3 30 m
2
GaInP/GaAs
HBT for different implementations. The small-signal parameters are from [16].
B. Determination of Model Parameter
n
Theoretically,
n
is equal to collector excess delay time

ex
, which can be determined from S-parameters. In a charge-
partitioning-based compact model,
n
can be determined as

cp

f
, where
cp
is the portion of base charge claimable by
the collector.
If noise data are available,
n
can be treated as a pure noise
model parameter to provide the best t of NF
min
. It can be
set to a portion of total transit time
f
as in our example in
Section III-E. Reference [14] showed that a bias-independent
value sufces for cases studied therein.
C. Small-Signal Modeling Results
The new implementation is veried by small-signal measure-
ments in a 3 30 m
2
InGaP/GaAs HBT, with data published
in [16]. The four noise parameters were measured from 3.6
to 34 GHz, the upper limit of which is close to f
T
of the
transistor. The small-signal parameters were also extracted and
given in [16]. The bias conditions for the data shown below are
I
c
= 6 mA, I
b
= 70 A, and V
CE
= 4 V. A type of circuit
topology is used here.
n
is set to the excess output delay time,
3 ps at the given bias.
c
was not given in [16].
Fig. 5 shows the simulated PSDs of terminal noise currents
using different implementations. The dotdashed curves repre-
sent the results of the SPICE model
S
ib
2qI
b
S
ic
2qI
c
S
icib
= 0. (18)
The dotted curves represent the results of Rudolph implementa-
tion based on topology for large signal usage [14]. The dashed
curves represent the results of (5). Finally, the solid curves
represent our new implementation. For S
ib
, (5) overlaps with
Rudolph implementation, which gives purely
2
dependence.
The new implementation is slightly lower at frequencies ap-
proaching f
T
as higher order frequency dependence is captured.
For S
ic
, (5) gives white 2qI
C
. The Rudolph implementation
Fig. 6. Noise parameters versus frequency at I
C
= 6 mA for the 3 30 m
2
GaInP/GaAs HBT. The measurement data were published in [16]. The sim-
ulation data are calculated based on the small-signal equivalent circuit given
in [16].
gives an unphysical increase at higher frequencies. Only this
implementation gives the correct behavior.
For the real part of S
icib
, (5) gives zero value, same as
the SPICE model. The Rudolph implementation gives much
higher
2
dependence than this method. For the imaginary
part of S
icib
, both (5) and Rudolph implementation give pure
dependence. Again, only this implementation captures the
higher order frequency dependence.
Fig. 6 shows the calculated noise parameters for the four
noise implementations corresponding to Fig. 5, together with
measurement data. Rudolphs implementation overestimates
NF
min
for the whole frequency range. Equation (5) gives the
same NF
min
as this implementation at lower frequencies, but it
overestimates NF
min
at high frequencies. These observations
similarly hold for R
n
. For both the real and imaginary parts of
Y
opt
, Rudolphs implementation underestimates their values at
frequencies above 15 GHz. Equation (5) instead overestimates
Y
opt
at such frequencies. Overall, the newimplementation gives
the best t to the data. There are many circuits operating at
frequencies around half of the peak f
T
[17], [18]. Therefore, the
implementation developed here, which improves the accuracy
particularly at higher frequencies, is not only academically
important but also of practical interest.
D. Verilog-A Code
The new implementation can be easily realized in all known
large-signal compact models where internal nodes B
i
, C
i
,
and E
i
are available. The Verilog-A code for the simplied
implementation is given below:
electrical na;
branch (na) b_nicddt, b_cdc, b_rdc;
branch (ci, ei) b_nic;
rdc = 2/3;
cdc = taun;
twoq = 2.0 P_Q;
XIA et al.: NEW APPROACH TO IMPLEMENTING NOISE FOR BIPOLAR TRANSISTOR MODELING 307
Fig. 7. Noise parameters versus J
C
at 10 GHz for the 3 20 0.8 m
2
SiGe HBT. The measurement data were published in [10]. The simulation data
are calculated based on the large-signal HICUM model.
sic = twoq abs(it);
sib = twoq abs(ibei);
I(b_nic) < +white_noise(sic, shot);
I(bi, ei) < +white_noise(sib, shot);
I(b_nicddt) < +taun ddt(I(b_nic));
I(b_cdc) < +cdc ddt(V(b_cdc));
I(b_rdc) < +V(b_rdc)/rdc;
I(ci, bi) < +I(b_rdc);
Here, na is the node name of the noise RC network; b_nic,
b_nicddt, b_cdc, and b_rdc are the branch names denoted
above in Fig. 2. it is the collector transfer current, and ibei is
the intrinsic base current.
E. Large-Signal Modeling Results
We applied the new implementation in the HICUM model
for a SiGe HBT with 36-GHz peak f
T
designed for high-
power applications (higher breakdown voltage). In this device,

c
accounts for most of the total transit time. In the simulation,

n
is set to 75% of the total transit time.
c
is not available
in the HICUM model. Fig. 7 shows the noise parameters
versus J
C
at 10 GHz and V
CE
= 3.3 V. The measurement
data were previously published in [10]. The simulated curves
have the same meanings as in Fig. 6, except that Rudolphs
implementation is not shown since it is not applicable to
HICUM, a noncharge-partitioning-based model. Clearly, the
new implementation works well in the large-signal model.
Overall, it gives the best t to measurement data compared
with the other two implementations. The underestimations of
NF
min
and R
n
by (5) at high current levels were found to
be the results of zero Real(S
icib
) in (5). Compared to all
the existing implementations, only this paper correctly models
nonzero Real(S
icib
).
IV. DISCUSSIONS
A. AccuracyComplexity Tradeoff
The simplied implementation method in Section III works
well before f
T
rolloff where
b

c
, as we demonstrated
Fig. 8. Simulated noise parameters versus frequency at I
C
= 34 mA for the
3 20 0.8 m
2
SiGe HBT based on the large-signal HICUM model.
above. However, it will be less accurate after peak f
T
where

b
becomes larger than
c
due to base push out. Fig. 8 compares
the simulation results between the generic two-stage imple-
mentation in Section II (dashed curves) and the simplication
in Section III (solid curves).
n
has been chosen to achieve
the best t of NF
min
. The SPICE model (dotdashed curves)
is also shown as a reference. Remarkably, the simplied im-
plementation still provides the same results as the two-stage
implementation for NF
min
, R
n
, and the real part of Y
opt
. The
simplied implementation overestimates the imaginary part of
Y
opt
by 12%. In practice, high-frequency noise is most relevant
for biases before f
T
rolloff. The simplied implementation thus
provides a good tradeoff between accuracy and complexity.
B. Nonconstant Velocity in the CB SCR
As mentioned in Section I, (1) was derived assuming constant
velocity throughout the CB SCR. In reality, such assumption
does not exactly hold due to carrier velocity overshoot [19].
is eventually more complex [20], i.e.,
=
1
x
m
x
m

0
dxexp

j
x

0
dx

v(x

(19)
where x
m
is the thickness of the CB SCR.
c
= x
m
/2v
sat
when
v(x

) = v
sat
and is a more complex function of x
m
otherwise.
In order to quantitatively examine the nonconstant velocity
effect, we studied v(x) as a linear function of x. Denoting v
0
and v
m
as the velocities at x = 0 and x = x
m
, respectively,
from (19), we derived
=
(v
m
/v
0
)
1jx
m
/(v
m
v
0
)
1
v
m
/v
0
1 jx
m
/v
0
. (20)
We examined two types of linear v(x) proles, as depicted
in Fig. 9: I) v
0
= v
sat
and v
m
> v
sat
; and II) v
0
> v
sat
and
v
m
= v
sat
. We found that in (20) can be still well modeled
using Fig. 2 for frequencies up to
c
. However, R
c
d
needs
to be slightly changed from 2/3 for different velocity proles,
308 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 59, NO. 2, FEBRUARY 2012
Fig. 9. R
c
d
as a function of v
0
/v
m
. x
m
= 1 m in the calculation, but the
result is independent on x
m
. x = 0 presents the base end of the CBSCR. R
c
d
=
2/3 when v
0
= v
m
.
as shown in Fig. 9. In this regard, R
c
d
can be another model
parameter.
V. CONCLUSION
We have developed a new approach to implementing corre-
lated terminal noises for compact modeling by placing an RC-
delayed noise current between the base and collector nodes. The
frequency dependence of the intrinsic noise sources due to the
CB SCR transport effect has been modeled with an accuracy
value up to the second order of . The proposed implementation
is more generic than existing implementations as it decouples
noise generation and propagation in the neutral regions from
noise transport through the CB SCR. For modern transistors,
only one model parameter is needed for noise modeling for
practical purposes. The proposed implementation has been
demonstrated to give the best t to measured noise parameters
among all existing implementations, and it is applicable to all
types of compact models.
REFERENCES
[1] W. Shockley, J. A. Copeland, and R. P. James, The impedance-eld
method of noise calculation in active semiconductor device, in Quantum
Theory of Atoms, Molecules, and the Solid State, P. O. Lowdin, Ed.
New York: Academic, 1966, pp. 537563.
[2] K. Xia and G. Niu, Impact of collectorbase space charge region on
RF noise in bipolar transistors, in Proc. IEEE BCTM, Maastricht, The
Netherlands, Oct. 810, 2006, pp. 166169.
[3] K. M. van Vliet, General transport theory of noise in pn junction-like
devicesI. Three-dimensional Greens function formulation, Solid State
Electron., vol. 15, no. 10, pp. 10331053, Oct. 1972.
[4] K. Xia and G. Niu, Discussions and extension of van Vliets noise model
for high speed bipolar transistors, Solid State Electron., vol. 53, no. 3,
pp. 349354, Mar. 2009.
[5] J. M. Early, P-N-I-P and N-P-I-N junction transistor triodes, Bell Syst.
Tech. J., vol. 33, no. 3, pp. 517533, May 1954.
[6] M. Rudolph, R. Doerner, L. Klapproth, and P. Heymann, An HBT noise
model valid up to transit frequency, IEEE Electron Device Lett., vol. 20,
no. 1, pp. 2426, Jan. 1999.
[7] G. Niu, J. D. Cressler, S. Zhang, W. E. Ansley, C. S. Webster, and
D. L. Harame, A unied approach to RF and microwave noise parameter
modeling in bipolar transistors, IEEE Trans. Electron Devices, vol. 48,
no. 11, pp. 25682574, Nov. 2001.
[8] K. Xia, G. Niu, D. Sheridan, and S. Sweeney, Frequency and bias-
dependent modeling of correlated base and collector current RF noise in
SiGe HBTs using quasi-static equivalent circuit, IEEE Trans. Electron
Devices, vol. 53, no. 3, pp. 515522, Mar. 2006.
[9] P. Sakalas, J. Herricht, M. Ramonas, and M. Schroter, Noise modeling
of advanced technology high speed SiGe HBTs, in Proc. IEEE BCTM,
Austin, TX, Oct. 46, 2010, pp. 169172.
[10] Z. Xu, G. Niu, and R. M. Malladi, Compact modeling of collector base
junction space charge region time effect on noise in SiGe HBTs, in Proc.
IEEE SiRF, New Orleans, LA, Jan. 1113, 2010, pp. 180183.
[11] NXP online document J. C. J. Paasschens, R. van der Toorn, and
W. J. Kloosterman, Manual for Mextram bipolar transistor model. [On-
line]. Available: http://www.nxp.com/models/bi_models/mextram
[12] J. C. J. Paasschens, R. J. Havens, and L. F. Tiemeijer, Modeling the cor-
relation in the high-frequency noise of (hetero-junction) bipolar transis-
tors using charge partitioning, in Proc. IEEE BCTM, Toulouse, France,
Sep. 2830, 2003, pp. 221224.
[13] K. Xia and G. Niu, Modeling the input non-quasi-static effect in small
signal equivalent circuit based on charge partitioning for bipolar transis-
tors and its impact on RF noise modeling, Solid State Electron., vol. 54,
no. 12, pp. 15661571, Dec. 2010.
[14] M. Rudolph, F. Korndorder, P. Heymann, and W. Heinrich, Compact
large-signal shot-noise model for HBTs, IEEE Trans. Microw. Theory
Tech., vol. 56, no. 1, pp. 714, Jan. 2008.
[15] K. A. Moen, J. Yuan, P. S. Chakraborty, M. Bellini, J. D. Cressler, H. Ho,
H. Yasuda, and R. Wise, Improved 2-D regional transit time analysis
for optimized scaling of SiGe HBTs, in Proc. IEEE BCTM, Austin, TX,
Oct. 46, 2010, pp. 257260.
[16] M. Rudolph and P. Heymann, Comparative study of shot-noise models
for HBTs, in Proc. IEEE Eur. Microw. Integr. Circuits Conf., Munich,
Germany, Oct. 810, 2007, pp. 191194.
[17] L. Zheng, L. Gilreath, V. Jain, and P. Heydari, Design and analysis of a
W-band detector in 0.18- m SiGe BiCMOS, in Proc. IEEE SiRF, New
Orleans, LA, Jan. 1113, 2010, pp. 196199.
[18] R. R. Severino, T. Taris, Y. Deval, D. Belot, and J. B. Begueret, A SiGe:C
BiCMOS LNA for 94 GHz band applications, in Proc. IEEE BCTM,
Austin, TX, Oct. 46, 2010, pp. 188191.
[19] J. Yuan, J. D. Cressler, K. A. Moen, and P. S. Chakraborty, An investiga-
tion of collectorbase transport in SiGe HBTs designed for half-terahertz
speeds, in Proc. IEEE BCTM, Austin, TX, Oct. 46, 2010, pp. 157160.
[20] S. Laux and W. Lee, Collector signal delay in the presence of velocity
overshoot, IEEE Electron Device Lett., vol. 11, no. 4, pp. 174176,
Apr. 1990.
Kejun Xia, photograph and biography not available at the time of publication.
Guofu Niu, photograph and biography not available at the time of publication.
Ziyan Xu, photograph and biography not available at the time of publication.