Basically we assume that holes are injected into the base at the forward bias emitter junction and these holes diffuse to the collector junction. First step is to solve for the excess carriers in the base region. Second step is to evaluate the emitter and collector currents, from the gradient of hole distribution on each side of the base region. Minority Carrier Distribution & Terminal Current As a third step, the base current can be calculated from a current summation. We shall simplify the calculation by making several assumptions: Holes diffuse from the emitter to collector; drift is negligible in the base region. The emitter current is made up entirely of holes. Minority Carrier Distribution & Terminal Current assumptions: The collector saturation current is negligible. The active part of base and the junctions are of uniform cross sectional area. All current and voltages are steady state. Minority Carrier Distribution Consider the simplified pnp transistor geometry which is shown below Minority Carrier Distribution The excess carrier concentration at the edge of emitter depletion region and collector junction at base is given by Emitter junction is strongly forward biased and collector base junction is strongly reverse biased. Minority Carrier Distribution We can solve the excess hole concentration as a function of distance in base using diffusion equation. The solution for this equation is given by By applying proper boundary conditions Minority Carrier Distribution Solving the previous equations to get the parameter as Apply this value to the solution equation we get This is the expression for the excess hole distribution in the base region. Evaluation of Terminal Current Emitter and Collector current can be evaluated by the gradient of hole concentration at each depletion region edge. From module- 1, the relation for diffusion current is The above equation evaluated at xn = 0, gives the hole component of the emitter current. Evaluation of Terminal Current Emitter current is given by Similarly if we neglect the electrons crossing from collector, Ic is made up entirely of holes entering the collector depletion region from the base. Evaluation of Terminal Current Substitute the value of C1 and C2 to the previous equations, we will get the solution as We know that Ie = Ib + Ic, So Ib = Ie - Ic Approximation of Terminal Currents If the collector junction is reverse biased, then he approximation of terminal currents will be as follows. Coupled Diode Model If the collector junction is forward biased, then the approximation equation cannot be considered. In such case, the emitter injected currents are represented as I EN and I CN respectively. Reverse injected current is represented as I EI and I CI For a symmetrical transistor, the various components can be written as follows. Coupled Diode Model Now we can write the normal and inverted mode current equation as follows. The four components are combined as Coupled Diode Model These equations are linear superposition of the normal and inverted components and it does not give the results of symmetrical transistor. To be more general, we must relate the four components of current by factors which allow asymmetry in the two junctions. Coupled Diode Model These equations are linear superposition of the normal and inverted components and it does not give the results of symmetrical transistor. To be more general, we must relate the four components of current by factors which allow asymmetry in the two junctions. So we shall write the normal emitter current as Coupled Diode Model Similarly the inverted collector current can be written as The corresponding collected currents in the collector and emitter terminals for normal and injected mode is Coupled Diode Model We can modify the ebers-moll equation as Coupled Diode Model The ebers-moll model can be drawn as follows Charge Control Analysis The normal components of current can be written in terms of stored charge as Similarly the inverted components can be written as Based on this the terminal currents can be written as Charge Control Analysis Base current in the normal mode supports recombination The effect of time dependence of stored charge is also included in these equations Drift in the base region Consider the doping profile of the transistor shown below. Drift in the base region A fairly sharp discontinuity in the doping profile can be seen. The net doping concentration in the base region is given by N = Nd Na. Doping distribution in the base is a portion of Gaussian. Doping concentration varies exponentially within the base region. Drift in the base region Doping profile in the base region is as shown below Drift in the base region Abuilt in electric field exist from emitter to collector. This adds a drift component of the transport of holes. The balance of electron drift and diffusion requires Therefore the built in electric field is given by Drift in the base region For a doping profile decreases in the positive direction, the field is positive in the emitter to collector direction. This field increases the transport of holes across the base region from emitter to collector. Base Narrowing Reverse bias condition applied to the collector terminal. Kirk Effect Current gain drops at high collector currents. Kirk Effect Current gain drops at high collector currents. Hetro Junction BJT Similar to Hetro Junction devices Hetro Junction BJT